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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Perspectives of active Si photonics devices for data communication and optical sensing

Si photonics has made rapid progress in research and commercialization in the past two decades. While it started with electronic–photonic integration on Si to overcome the interconnect bottleneck in data communications, Si photonics has now greatly expanded into optical sensing, light detection and ranging (LiDAR), optical computing, and microwave/RF photonics applications. From an applied physics point of view, this perspective discusses novel materials and integration schemes of active Si photonics devices for a broad range of applications in data communications, spectrally extended complementary metal–oxide–semiconductor (CMOS) image sensing, as well as 3D imaging for LiDAR systems. We also present a brief outlook of future synergy between Si photonic integrated circuits and Si CMOS image sensors toward ultrahigh capacity optical I/O, ultrafast imaging systems, and ultrahigh sensitivity lab-on-chip molecular biosensing.

electronic band structure↗
DOE OSTI2022

Optics-Free Chip-Scale Intraoperative Imaging Using NIR-Excited Upconverting Nanoparticles

Here we present an optics-free CMOS image sensor that incorporates a novel time-gated dual-photodiode pixel design to allow filter- and lens-less image acquisition of near-infrared-excited (NIR-excited) upconverting nanoparticles. Recent biomedical advances have highlighted the benefits of NIR excitation, but NIR interaction with silicon has remained a challenge, even with high-performance optical blocking filters. Using a secondary diode and a dual-photodiode design, this sensor is able to remove the 100s of mV of NIR background on pixels and bring it down to single-digit mV level, nearing its noise floor of 2.2 mV rms, not achievable with any optical filter. Non-linear effects of background cancellation using the diode pair has been mitigated using an initial one-time pixel-level curve fitting and calibration in a post-processing setting. This imager comprises a highly linear 11 fF metal-oxide-metal (MOM) capacitor and includes integrated angle-selective gratings to reject oblique light and enhance sharpness. Each pixel also includes two distinct correlated double sampling schemes, to remove low frequency flicker noise and systematic offset in the datapath. We demonstrate the performance of this imager using pulsed NIR-excited upconverting nanoparticles on standard United-States-Air-Force (USAF) resolution targets and achieve an SNR of 15 dB, while keeping NIR background below 6 mV. This 36-by-80-pixel array measures only 2.3 mm by 4.8 mm and can be thinned down to 25 µm, allowing it to become surgically compatible with intraoperative instruments and equipment, while remaining optics-free.

42 ENGINEERING↗
DOE OSTI2021

Monte Carlo Modeling and Design of Photon Energy Attenuation Layers for >10× Quantum Yield Enhancement in Si-Based Hard X-ray Detectors

High-energy (>20 keV) X-ray photon detection at high quantum yield, high spatial resolution, and short response time has long been an important area of study in physics. Scintillation is a prevalent method but limited in various ways. Directly detecting high-energy X-ray photons has been a challenge to this day, mainly due to low photon-to-photoelectron conversion efficiencies. Commercially available state-of-the-art Si direct detection products such as the Si charge-coupled device (CCD) are inefficient for >10 keV photons. Here, we present Monte Carlo simulation results and analyses to introduce a highly effective yet simple high-energy X-ray detection concept with significantly enhanced photon-to-electron conversion efficiencies composed of two layers: a top high-Z photon energy attenuation layer (PAL) and a bottom Si detector. We use the principle of photon energy down conversion, where high-energy X-ray photon energies are attenuated down to ≤10 keV via inelastic scattering suitable for efficient photoelectric absorption by Si. Our Monte Carlo simulation results demonstrate that a 10–30× increase in quantum yield can be achieved using PbTe PAL on Si, potentially advancing high-resolution, high-efficiency X-ray detection using PAL-enhanced Si CMOS image sensors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Chip-integrated metasurface full-Stokes polarimetric imaging sensor

Abstract Polarimetric imaging has a wide range of applications for uncovering features invisible to human eyes and conventional imaging sensors. Chip-integrated, fast, cost-effective, and accurate full-Stokes polarimetric imaging sensors are highly desirable in many applications, which, however, remain elusive due to fundamental material limitations. Here we present a chip-integrated Meta surface-based Full-Stokes Polar imetric Im aging sensor (MetaPolarIm) realized by integrating an ultrathin (~600 nm) metasurface polarization filter array (MPFA) onto a visible imaging sensor with CMOS compatible fabrication processes. The MPFA is featured with broadband dielectric-metal hybrid chiral metasurfaces and double-layer nanograting polarizers. This chip-integrated polarimetric imaging sensor enables single-shot full-Stokes imaging (speed limited by the CMOS imager) with the most compact form factor, records high measurement accuracy, dual-color operation (green and red) and a field of view up to 40 degrees. MetaPolarIm holds great promise to enable transformative applications in autonomous vision, industry inspection, space exploration, medical imaging and diagnosis.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Soft x-ray detection for small satellites with a commercial CMOS sensor at room temperature

Recently CMOS (complementary metal-oxide-semiconductor) sensors have progressed to a point where they may offer improved performance in imaging x-ray detection compared to the CCDs often used in x-ray satellites. We demonstrate x-ray detection in the soft x-ray band (250-1700 eV) by a commercially available back-illuminated Sony IMX290LLR CMOS sensor using the Advanced Photon Source at the Argonne National Laboratory. Additionally, while operating the device at room temperature, we measure energy resolutions (FWHM) of 47 eV at 250 eV and and 77 eV 1700 eV which are comparable to the performance of the Chandra ACIS and the Suzaku XIS. Furthermore, we demonstrate that the IMX290LLR can withstand radiation up to 17.1 krad, making it suitable for use on spacecraft in low earth orbit.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

A 24-Channel Digitizer With a JESD204B-Compliant Serial Interface for High-Speed Detectors

In this report a 24-channel application-specific integrated circuit (ASIC) for the readout of high-speed CMOS active pixel sensors for charged particle detection is presented. The chip comprises 24 preamplifiers, 24 distinct 12-bit, 25 MSPS Pipelined analog-to-digital converters (ADCs) with self-calibration, an internal phase-locked loop (PLL), and a 3 Gbps serial interface that conforms to the JESD204B standard. To simplify interfacing with a variety of sensors, the ASIC also includes an automatic offset calibration loop. The high level of integration of the ASIC reduces overall system cost and area, and exploiting the signal characteristics of the image sensor allows the ADC to be optimized for reduced power dissipation. The use of an integrated serializer and an industry standard protocol simplifies integration of the ASIC into a complete camera system. The ASIC, called the High-Speed Image Preprocessor Targeted for Electron Readout, or HIPSTER, with a die area of 64.26 mm 2 , is packaged in a 480-ball grid array (BGA) and is fabricated in 180-nm CMOS technology. HIPSTER achieves typical differential nonlinearity (DNL) < 0.55 LSB, input-referred thermal noise of $114.5 μV-rms, and a bit error rate (BER) of better than 10-14. The power dissipation is 98 mW/channel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Development of selenium imaging detectors toward a definitive search for neutrinoless ββ decay

Imaging sensors made from an ionization target layer of amorphous selenium (aSe) coupled to a silicon complementary metal-oxide-semiconductor (CMOS) active pixel array for charge readout are a promising technology for neutrino physics. The high spatial resolution in a solid-state target provides unparalleled rejection of backgrounds from natural radioactivity in the search for the neutrinoless ββ decay of 82 Se. With this grant, we experimentally determined two crucial factors necessary for the realization of this novel technology: i) the intrinsic energy response of aSe to ionizing electrons, and ii) the feasibility to couple a target layer of aSe to a CMOS active pixel sensor to image electron tracks.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Evaluation of Low-cost, Full HD, CMOS Cameras for Use in the Calcine Retrieval Project - 19530

This paper describes results from radiation testing conducted on low-cost, commercial off-the-shelf, full high-definition (HD) resolution (1920 x 1080 p), complementary metal-oxide-semiconductor (CMOS) camera sensors. The purpose of the testing was to evaluate the sensors' suitability for use in the Calcine Retrieval Project by determining their image quality and life expectancy while operating in an ionizing radiation field of 20.0 Gy/h. The two camera sensors tested were the Axis FA1105 and Axis FA1125. These commercial camera sensors were designed for retail security surveillance and have no radiation-hardened (rad-hard) components. In addition to radiation testing, the sensors' field-of-view, resolution, and low-light image quality were tested at several target distances to ensure they meet project requirements. Testing was divided into two phases. During Phase 1, four FA1105 sensors and four FA1125 sensors were tested simultaneously without any shielding in radiation fields of 25.5 Gy/h and 49.3 Gy/h. In Phase 2, three FA1105 and five FA1125 sensors were shielded by 22.2 mm of lead and tested simultaneously in radiation fields of 26.8 Gy/h, 52.3 Gy/h, 143.0 Gy/h, 200.7 Gy/h, 404.6 Gy/h, and 2,317.5 Gy/h. Dose rate values were established using film dosimetry readings. Apertures in the shielding allowed for a 40-degree field of view while shielding all parts of the sensor except for directly in front of the CMOS sensor array. All testing was conducted at the Idaho Accelerator Center in Pocatello, Idaho, using a 450 keV X-ray generator. Sensor images were automatically captured at regular intervals throughout the testing for qualitative evaluation by the test team. Film dosimetry was placed near the sensors to record actual dose totals. The 450 keV setting generates X-ray radiation with an energy level close to the primary gamma energy level produced by the Cesium-137 isotope in the calcine, which is 662 keV. Results from Phase 1 indicate the sensors failed at an average cumulative dose of 226.3 Gy. For a given 20.0 Gy/h field this results in a mean time to failure (MTTF) of 11.3 hours. Recorded images from all sensors showed minimal image degradation due to radiation-induced noise. When the sensors finally failed, the failure mode was an abrupt loss of video. The image went black suggesting some other component in the sensor head besides the CMOS sensor array was responsible for the failure. During a portion of Phase 1 testing, a commercial, rad-hard camera was irradiated in the 25.5 Gy/h field along with the eight Axis FA series sensors. Image quality from the FA series sensors significantly outperformed the image quality of the rad-hard camera in radiation-induced noise tolerance, image resolution, and dynamic range. During Phase 2 testing, all sensors produced excellent images in radiation fields as high as 404.6 Gy/h. One FA1125 sensor was tested at the highest dose rate of 2,317.5 Gy/h. At this dose rate, the image was color shifted towards red and contained a significant amount radiation-induced noise. The sensor did not fail and was producing usable imagery after one hour, at which time the test was ended due to allotted beam-time at the test facility. Eighteen hours after X-rays were shut off, the sensor image returned to normal color and all eight sensors continued to operate without any visible, permanent image degradation. For Phase 2 testing, it was not possible to establish a MTTF since none of the shielded sensors failed during the allotted test time. However, given the highest cumulative dose of 4,142.1 Gy received by a shielded FA1125 sensor, a minimum life expectancy of 207 hours (8.6 days) is predicted while operating in a 20.0 Gy/h field. Test results indicate the radiation tolerance of the FA series sensor's CMOS array, along with the small form factor, full HD image quality, wide dynamic range, and Ethernet standard makes it suitable for short-term use in monitoring and visually documenting waste remediation efforts for the Calcine Retrieval Project at the INL. The sensor's low-cost of about $140 US, compared to commercial rad-hard cameras costing between $5,000 and $7,000 US each, allow them to be used as an affordable, disposable resource for many short-duration, radioactive waste remediation efforts where decontamination of an expensive, commercial rad-hard camera is undesirable or not possible. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2018

Broadband imaging with one planar diffractive lens

We demonstrate imaging over the visible band using a single planar diffractive lens. This is enabled via multi-level diffractive optics that is designed to focus over a broad wavelength range, which we refer to as an achromatic diffractive lens (ADL). We designed, fabricated and characterized two ADLs with numerical apertures of 0.05 and 0.18. Diffraction-limited focusing is demonstrated for the NA = 0.05 lens with measured focusing efficiency of over 40% across the entire visible spectrum (450 nm to 750 nm). We characterized the lenses with a monochromatic and a color CMOS sensor, and demonstrated video imaging under natural sunlight and other broadband illumination conditions. We use rigorous electromagnetic simulations to emphasize that ADLs can achieve high NA (0.9) and large operating bandwidth (300 nm in the visible spectrum), a combination of metrics that have so far eluded other flat-lens technologies such as metalenses. Here, these planar diffractive lenses can be cost-effectively manufactured over large areas and thereby, can enable the wide adoption of flat, low-cost lenses for a variety of imaging applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Toward memory-efficient melt pool monitoring: a classification framework using event-based imaging and sparse sensing technique

Vision sensors like CMOS and CCD cameras are often used for in-process monitoring of melt pools in laser-based additive and welding processes, but they require transferring large amounts of data and computational processing resources. Event-based neuromorphic imagery, on the other hand, detects only the change in pixel intensity, thus potentially reducing the data amount and latency. With an event imager, this study develops a framework for melt pool condition classification, including image construction, time scale selection, optimal pixel selection, and sparse classification, to achieve a highly memory-efficient scheme. These are based on sparse sensing techniques with singular value decomposition (SVD) and QR pivoting, the two fundamental matrix transformations for linear dimensionality reduction. The framework is then validated by classifying a controlled experiment by exciting various mode shapes of liquid gallium pools of varying depths (3, 6, and 8 mm). At 200 pixels, the classifier can reach overall accuracy of 75%, while at 2000 pixels (0.013% of the total possible pixels), the accuracy is nearly 90% (89.86%). At the same number of pixels, random selection can only achieve 46% and 67%, respectively. The memory savings of the sparsely sampled event data compared to a conventional imager is about 500 times. In addition to performance, implementation and limitations of the framework are also discussed.

42 ENGINEERING↗
DOE OSTI2018

Performance comparison of state-of-the-art high-speed video cameras for scientific applications

Time-resolved visualization of fast processes using high-speed digital video-cameras has been widely used in most fields of scientific research for over a decade. In many applications, high-speed imaging is used not only to record the time history of a phenomenon but also to quantify it, hence requiring dependable equipment. Important aspects of two-dimensional imaging instrumentation used to qualitatively or quantitatively assess fast-moving scenes include sensitivity, linearity, as well as signal-to-noise ratio (SNR). Under certain circumstances, the weaknesses of commercially available high-speed cameras, i.e., sensitivity, linearity, image lag, etc., render the experiment complicated and uncertain. Our study evaluated two advanced CMOS-based, continuous-recording, high-speed cameras available at the moment of writing. In this work, various parameters, potentially important toward accurate time-resolved measurements and photonic quantification, have been measured under controlled conditions on the bench, using scientific instrumentation. Testing procedures to measure sensitivity, linearity, SNR, shutter accuracy, and image lag are proposed and detailed. The results of the tests, comparing the two high-speed cameras under study, are also presented and discussed. Results show that, with careful implementation and understanding of their performance and limitations, these high-speed cameras are reasonable alternatives to scientific CCD cameras, while also delivering time-resolved imaging data.

42 ENGINEERING↗
DOE OSTI2024

Digital Miniature Cathode Ray Magnetometer

In this study, we introduce the concept and construction of an innovative Digital Miniature Cathode Ray Magnetometer designed for the precise detection of magnetic fields. This device addresses several limitations inherent to magnetic probes such as D.C. offset, nonlinearity, temperature drift, sensor aging, and the need for frequent recalibration, while capable of operating in a wide range of magnetic fields. The core principle of this device involves the utilization of a charged particle beam as the sensitivity medium. The system leverages the interaction of an electron beam with a scintillator material, which then emits visible light that is captured by an imager. The emitted scintillation light is captured by a CMOS sensor. This sensor not only records the scintillation light but also accurately determines the position of the electron beam, providing invaluable spatial information crucial for magnetic field mapping. The key innovation lies in the combination of electron beam projection, CMOS imager scintillation-based detection, and digital image signal processing. By employing this synergy, the magnetometer achieves remarkable accuracy, sensitivity and dynamic range. The precise position registration enabled by the CMOS sensor further enhances the device’s utility in capturing complex magnetic field patterns, allowing for 2D field mapping. In this work, the optimization of the probe’s performance is tailored for applications related to the characterization of insertion devices in light sources, including undulators.

Turqueti, Marcos↗
DOE OSTI2022

Characterization of Advanced Imaging Systems for High-Resolution and Event-Mode Detection

Post-irradiation examination (PIE) is a continually growing field critical to the development of improved nuclear fuels. To characterize these materials, neutron imaging systems are employed and outfitted with, typically, CMOS or CCD cameras - complementary metal oxide semiconductor sensors and charge-couple devices. Imaging systems are a team-effort between the camera, scintillating materials, and object of interest, as a result of neutrons' inherent need to be converted to a detectable signal. High resolution imaging, flash radiography imaging, and event-mode detection systems are three systems undergoing development, construction, and characterization for improved spatial resolution and time-of-flight detection for PIE efforts.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Performance of the AstroPix Prototype Module for the Barrel Imaging Calorimeter at the ePIC Detector and in Space-Based Payloads

AstroPix is a high-voltage CMOS (HV-CMOS) monolithic active pixel sensor originally developed to enable precision gamma-ray imaging and spectroscopy in the medium-energy regime (~100 keV–100 MeV) based on the groundwork laid by ATLASpix and MuPix. It features a 500 μm pixel pitch, in-pixel amplification and digitization, and low power consumption (~3-4 mW/cm2), making it scalable for large-area, multilayer telescope detector planes. The detectors have a designed dynamic range of 25 keV to 700 keV. With these features, AstroPix meets the requirements of future space-based high-energy telescopes and the imaging layers of the Barrel Imaging Calorimeter (BIC) in the Electron-Proton/Ion Collider (ePIC) detector at the future Electron-Ion Collider (EIC). For the space-based payload, AstroPix is being integrated into sounding rocket and balloon payloads to demonstrate the technical readiness of the devices. For BIC, AstroPix-based imaging layers interleaved within the lead/scintillating-fiber (Pb/SciFi) sampling calorimeter provide granular shower imaging, enabling key performance features such as electron/pion or gamma/neutral pion separation. As part of the ongoing detector R&D efforts, we have been testing various AstroPix_v3 configurations: the single chip, a quad-chip assembly, a three-layer stack of quad chips, and a 9-chip module that represents the smallest prototype unit of the BIC imaging layer. This presentation will highlight recent performance test results from these AstroPix detector configurations.

Kim, Bobae (ORCID:0000000295396815)↗
DOE OSTI2019

Initial assessment of multilayer silicon detectors for hard X-ray imaging

Silicon detectors with lower material budget, ultrafast readout and radiation hardness are under developments. These unique features make pixelized silicon sensors a good option for hard X-ray imaging. To verify the performance of spatial resolution and energy sensitivity of silicon sensors to hard X-rays, a two layer setup of Pixelink PL-D725MU sensors has been tested at the Argonne National Laboratory Advanced Photon Source (APS) ID-10 sector with 29.2 keV high photon flux (4.5 x 10(8) to 4.5 x 10(10) photons per second) X-rays. Better than 3 mu m spatial resolution and clear energy characterization have been achieved by both layers. Commercial CMOS sensors with superior spatial resolution could be used for phase contrast imaging in current synchrotrons. These studies pave the path for future multilayer ultrafast silicon sensor development with ns to sub-ns readout speeds in hard X-ray imaging at synchrotrons and XFEL beamlines.

Hard X-ray imaging↗
DOE OSTI2026

Beam test performance of AstroPix sensor with 120 GeV protons

AstroPix is a High-Voltage CMOS Monolithic Active Pixel Sensor (HV-CMOS MAPS) developed for precision gamma-ray imaging and spectroscopy in the medium-energy regime, as well as for precise shower imaging and tracking in the Barrel Imaging Calorimeter (BIC) of the Electron Proton/Ion Collider (ePIC) detector at the future Electron–Ion Collider (EIC). We present beam test results of the AstroPix_v3 sensor using a 120 GeV proton beam at the Fermilab Test Beam Facility (FTBF), performed as part of the broader experimental campaign for the BIC prototype calorimeter. The sensor’s 500 µm pixel pitch enabled precise measurement of the beam profile, providing important information for the calorimeter performance studies. Using the measured 120 GeV proton data, we measure the energy deposit of minimum ionizing particles (MIP) and use them to extract the corresponding effective depletion depth at a single bias voltage of −150 V .

AstroPix↗
DOE OSTI2023

Development of quantum dot materials for infrared cameras (Final CRADA Report)

The aim of this project was to develop scalable methods to produce infrared (IR) mercury telluride (HgTe) colloidal quantum dot (CQD) thin films and demonstrate their utility in a proof-of-concept monolithic SWIR focal plane array (FPA). These objectives were accomplished by scaling up the HgTe CQD synthesis, characterizing physical and electrical properties of HgTe CQDs, evaluating solution-processed coating methods for quality and efficiency, and developing a process flow to integrate HgTe CQDs with commercial-off-the-shelf silicon CMOS readout circuits by solution-processed coating to produce monolithic FPAs. The FPA is the image sensor in an infrared imaging system responsible for detecting and processing reflected or emitted light into an infrared image of the scene under observation. The quality of the image is determined by the sensitivity and resolution of the image sensor in the system. Higher resolution IR FPAs enable higher throughput in manufacturing quality assurance, wider field of view for autonomous navigation, and longer range surveillance for defense.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Using High-Performance Cameras for Advanced Plasma Diagnostics

We will present insights, challenges, and recent progress on using a multi-megapixel deep-depletion CCD camera for quantitative X-ray spectra in a single-hit exposure mode in order to optimize X-ray diffraction experiments. We will also present some applications of Sandia’s in-house developed hybrid CMOS (hCMOS) sensors, which can record up to four full frames of optical or X-ray images in sequences with only a few nanoseconds interframe timing in a single line-of-sight.

Geissel, Matthias [Sandia National Laboratories (S↗