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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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32 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

CMS HGCAL ECON-D ASIC : Impact of CMOS fabrication process tuning on performance and radiation tolerance

The CMS experiment’s High Granularity Calorimeter (HGCAL) upgrade will replace CMS’s existing endcap calorimeters in preparation for the High Luminosity LHC. To effectively use over 6 million channels of this “imaging”calorimeter, CMS has developed two novel Endcap Concentrator (ECON) ASICs to perform data compression/selection on detector. The ECON-D ASIC operates on the 750kHz data path, and the ECON-T ASIC on the 40MHz trigger path. These 65 nm CMOS ASICs are radiation tolerant to 200 Mrad and low power, operating at less than 2.5 mW/channel. The first full-functionality prototype ECONs were produced and characterized in 2021-23, and an initial engineering run was performed in 2024. ECON-D radiation testing for the engineering run revealed that the chip’s internal SRAMs produce intermittent read errors for a non-negligible fraction of chips. Further investigation indicated that the SRAM performance is highly sensitive to the exact parameters of the CMOS fabrication process. To both study this process sensitivity and mitigate SRAM performance issues, twenty ECON wafers were produced in 2025 with a range of doping concentrations designed to tune the underlying transistor threshold voltage by 0%, 5%, 10%, and 15% from nominal. This talk will present first measurements of ECON-D performance, power consumption, and radiation tolerance for these four variations of CMOS process.

Syal, Chinar [Fermilab]↗
DOE OSTI2024

The Impact of Bias Row Noise to Photometric Accuracy: Case Study Based on a Scientific CMOS Detector

Abstract We tested a new model of CMOS detector manufactured by the Gpixel Inc, for potential space astronomical application. In laboratory, we obtain some bias images under the typical application environment. In these bias images, clear random row noise pattern is observed. The row noise also contains some characteristic spatial frequencies. We quantitatively estimated the impact of this feature to photometric measurements, by making simulated images. We compared different bias noise types under strict parameter control. The result shows the row noise will significantly deteriorate the photometric accuracy. It effectively increases the readout noise by a factor of 2–10. However, if it is properly removed, the image quality and photometric accuracy will be significantly improved.

Astronomy & Astrophysics↗
DOE OSTI2025

A review of quantum imaging methods and enabling technologies

The field of quantum imaging has recently seen an explosion of new methods and techniques. At the heart of most quantum imaging approaches are three enabling technologies: the source of the quantum light, the detectors that turn sensing into imaging, and the method by which the quantum nature of light is leveraged to improve the desired measurement. This review addresses the dominant and emerging technologies in each of these components as well as details concerning the implementations of various quantum imaging methods.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Developing time-resolved x-ray diffraction diagnostics at the National Ignition Facility (invited)

As part of a program to measure phase transition timescales in materials under dynamic compression, we have designed new x-ray imaging diagnostics to record multiple x-ray diffraction measurements during a single laser-driven experiment. Our design places several ns-gated hybrid CMOS (hCMOS) sensors within a few cm of a laser-driven target. The sensors must be protected from an extremely harsh environment, including debris, electromagnetic pulses, and unconverted laser light. Another key challenge is reducing the x-ray background relative to the faint diffraction signal. Building on the success of our predecessor (Target Diffraction In Situ), we implemented a staged approach to platform development. First, we built a demonstration diagnostic (Gated Diffraction Development Diagnostic) with two hCMOS sensors to confirm we could adequately protect them from the harsh environment and also acquire acceptable diffraction data. This allowed the team to quickly assess the risks and address the most significant challenges. Here, we also collected scientifically useful data during development. Leveraging what we learned, we recently developed a much more ambitious instrument (Flexible Imaging Diffraction Diagnostic for Laser Experiments) that can field up to eight hCMOS sensors in a flexible geometry and participate in back-to-back shots at the National Ignition Facility (NIF). The design also allows for future iterations, such as faster hCMOS sensors and an embedded x-ray streak camera. The enhanced capabilities of the new instrument required a much more complex design, and the unexpected issues encountered on the first few shots at NIF remind us that complexity has consequences. Our progress in addressing these challenges is described herein, as is our current focus on improving data quality by reducing x-ray background and quantifying the uncertainties of our diffraction measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Fabrication of a Point-Like Transmission Target for Reducing Computed Tomography Imaging Artifacts

In this study, we address the challenge of enhancing image quality and spatial resolution in computed tomography (CT) imaging by introducing simulation and fabrication of high aspect ratio, point-like transmission targets. Utilizing advanced electroplating techniques, traditionally employed in the fabrication of Through Substrate Via (TSV) interconnects for CMOS circuitry, we successfully embed copper targets within silicon substrates. This method allows us to create high-aspect-ratio features specifically designed for X-ray transmission targets, resulting in micro targets that exhibit a volume increase compared to conventional evaporated surface targets. Furthermore, we present simulation results of the X-ray spectrum generated by these targets, demonstrating their potential to significantly improve both image quality and spatial resolution in CT applications. Our findings suggest that leveraging advanced fabrication techniques can open new avenues for the development of enhanced imaging technologies in medical diagnostics and beyond.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

28nm front end ASIC and 12” LGADs for 3D integration

The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (≈10 μm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present the design and results from a 28 nm CMOS ASIC prototype, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. We also report on the co-design and characterization of reticle-scale LGAD sensors with 50 μm and 100 μm pixels and introduce the next 10k-pixel ASIC designed for full 3D integration. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.

England, Troy [Fermilab] (ORCID:0000000154405255)↗
DOE OSTI2025

Rapid spatial analysis of surrogate TRISO fuel particles using laser-induced breakdown spectroscopy image analysis

Laser-induced breakdown spectroscopy (LIBS) mapping enables rapid elemental and spatial analysis of solid samples. In this work, surrogate TRi-structural ISOtropic (TRISO) particles with various layers consisting of Zr, W, C, and Si were used to demonstrate the use of a new thickness measurement tool developed to analyze elemental images generated from LIBS maps. Zr particles with varying outer-layer thicknesses ranging from 16 to 32 μm were measured with scanning electron microscopy with energy dispersive spectroscopy (SEM-EDS) and LIBS with both a complementary metal-oxide-semiconductor (CMOS) detector and an intensified charged coupled device (ICCD) detector. LIBS maps of particles were completed using CMOS and ICCD spectrometers with effective spatial resolutions of 4 and 2 μm, respectively. The novel thickness measurement tool identified layer regions within a LIBS map and then identified the locations of the boundaries between these layers. The tool then generated up to 1000 random profiles stemming radially from the center region, which were used to measure the layer thickness/radius. This image analysis tool demonstrated LIBS's ability to provide values comparable with SEM-EDS (3.7% relative difference) along with a 95% reduction in measurement time. Furthermore, the precision of these measurements was on par with the SEM-EDS measurements at <15% relative standard deviation. Following the analysis of the Zr particles, W particles with increased complexity (e.g., five versus three layers) were analyzed using both the CMOS and ICCD spectrometers simultaneously. The spatial dimensions were extracted with an average relative difference of 2.7% and an average relative standard deviation of 9%.

Andrews, Hunter B. [Oak Ridge National Laboratory ↗
DOE OSTI2026

Machine learning pipeline for denoising low signal-to-noise ratio and out-of-distribution transmission electron microscopy datasets

High-resolution transmission electron microscopy (HRTEM) is crucial for observing material’s structural and morphological evolution at Angstrom scales, but the electron beam can alter these processes. Devices such as CMOS-based direct-electron detectors operating in electron-counting mode can be utilized to substantially reduce the electron dosage. However, the resulting images often lead to a low signal-to-noise ratio, which requires frame integration that sacrifices temporal resolution. Several machine learning (ML) models have been recently developed to successfully denoise HRTEM images. Yet, these models are often computationally expensive, and their inference speeds on GPUs are outpaced by the imaging speed of advanced detectors, precluding in situ analysis. Furthermore, the performance of these denoising models on datasets with imaging conditions that deviate from the training datasets has not been evaluated. To mitigate these gaps, we propose a new self-supervised ML denoising pipeline specifically designed for time-series HRTEM images. This pipeline integrates a blind-spot convolution neural network with pre-processing and post-processing steps, including drift correction and low-pass filtering. Results demonstrate that our model outperforms various other ML and non-ML denoising methods in noise reduction and contrast enhancement, leading to improved visual clarity of atomic features. Additionally, the model is drastically faster than U-Net-based ML models and demonstrates excellent out-of-distribution generalization. The model’s computational inference speed is in the order of milliseconds per image, rendering it suitable for application in in-situ HRTEM experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Evaluation of an event-driven 3FI ASIC for spectroscopic X-ray detection with synchrotron radiation

The novel design and evaluation on the NSLS-II beamline of the 3FI application-specific integrated circuit (ASIC) bump-bonded to a simple, planar, 2D segmented silicon sensor are presented. The ASIC was developed for full-field fluorescence spectral X-ray imaging (3FI). It is a small-scale prototype that features a square array of 32 × 32 pixels, and the size of the pixels is 100 µm × 100 µm. The ASIC was implemented in a 65 nm CMOS integrated circuit fabrication process. Each pixel incorporates a charge-sensitive amplifier, a shaping filter, a discriminator, a peak detector and a sample-and-hold circuit, allowing detection of events and storage of signal amplitudes. The system operates in a frameless event-driven readout mode, outputting analog values for threshold-triggered events, allowing high-speed multi-element X-ray fluorescence data acquisition. The 3FI ASIC achieves per-channel spectrometric performance at a power consumption of only 200 µW per pixel, with nearly all dissipation confined to the analog front-end. An energy resolution is measured at the level of 308 eV full width at half-maximum (FWHM) at 8.04 keV (Cu Kα), and 138 eV FWHM at 3.69 keV (Ca Kα). This per-pixel capability makes the prototype suitable for in situ trace element microanalysis in biological and environmental studies. Moreover, the frameless architecture of the detector is designed to address limitations of conventional X-ray fluorescence microscopy, which typically requires mechanical scanning, by enabling continuous high-throughput data acquisition in future full-field implementations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Nanophotonic waveguide chip-to-world beam scanning

A seamless chip-to-world photonic interface enables broad advancements in optical ranging, display, communication, computation and quantum information science. The ideal solution enables two-dimensional scanning of a diffraction-limited beam from anywhere on a photonic integrated circuit to a large number of resolvable spots. Current beam-scanning technologies are limited by a fundamental trade-off: photonic-integrated-circuits with diffractive optics offer scalability but have poor mode quality, whereas inertially limited micromechanical scanners provide high-quality beams but lack scalable integration. Here we report a photonic ski-jump—a nanoscale waveguide monolithically integrated on a piezoelectric cantilever—to overcome these limitations. It passively curls ~90° out-of-plane within a less-than-0.1 mm 2 footprint, emits a submicrometre, broadband diffraction-limited beam, and exhibits kilohertz-rate mechanical resonances with quality factors of over 10,000. Fabricated in a volume complementary metal–oxide–semiconductor (CMOS) foundry, our device enables scalable two-dimensional beam scanning. Driven on-resonance at CMOS-level voltages, it achieves a footprint-adjusted spot rate of 68.6 mega spots s –1 mm–², exceeding state-of-the-art micro-electro-mechanical systems mirrors by more than 50-fold, which is sufficient for one million pixels at 100 Hz from an approximately 1.5 mm diameter footprint. We demonstrate full-colour image and video projection, and single-photon initialization and readout from silicon vacancy centres in diamond. Finally, by demonstrating uniformity across a 64 ski-jump array, we establish a pathway to achieving greater than one gigaspot resolution at kilohertz rates within a sub-5-cm-diameter footprint, creating a seamless optical pipeline between integrated photonic processors and the free-space world.

Displays↗
DOE OSTI2025

Exploration of a Combined LIBS and LA-ICP-MS Approach for Apatite Characterisation

A combined laser‐induced breakdown spectroscopy (LIBS) and laser ablation‐inductively coupled plasma‐mass spectrometry (LA‐ICP‐MS) method is demonstrated for comprehensive apatite analysis. These measurements provide elemental imaging that can be used as a screening technique for chemical selection of grains for subsequent analysis (e.g., U‐Pb geochronology) or can be used to understand elemental distributions within a single grain that would have direct textural‐chemical implications (e.g., zoning patterns). Adding LIBS as a simultaneous measurement, to LA‐ICP‐MS U‐Pb geochronology, allowed for the direct determination of F (H and O show promise for future applications) in addition to major and trace elements of interest. Here, the quantitative measurements were validated against a series of apatites with known values and used to characterise a wide range of samples. Fluorine detection limits were determined to be as low as 70 μg g ‐1 F (broadband CMOS detector) and 4.2 μg g ‐1 F (ICCD detector). U‐Pb age dating was simultaneously collected by LA‐ICP‐MS with the quantitative elemental data from LIBS, providing a comprehensive method for geochronology.

Apatite↗
DOE OSTI2025

Low-Jitter Clock Receivers for Fast Timing Applications

Precision timing is a key requirement for emerging 4D particle tracking, Positron Emission Tomography (PET), beam and fusion plasma diagnostics, and other systems. Time-to-Digital Converters (TDCs) are commonly used to provide digital estimates of the relative timing between events, but the jitter performance of a TDC can be no better than the performance of the circuits that acquire the pulses and deliver them to the TDC. Several clock receiver and distribution circuits were evaluated, and a differential amplifier with resistive loads driving a pseudo-differential clock distribution network, developed using design guidelines for radiation tolerance and cryogenic compatibility, was fabricated as part of three prototypes: an analog front-end testbed chip for high-precision timing pixel readout, a dedicated TDC evaluation chip, and a Low-Gain Avalanche Detector (LGAD) readout circuit. Based on TDC measurements of the prototypes, we infer that the jitter added by the clock receiver and distribution circuits is less than 2.25 ps-rms. This performance meets the requirements of many future precision timing systems. The clock receiver and on-chip pseudo-differential driver were fabricated in commercial 28-nm CMOS technology and occupy 2288 µm 2 .

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Gate-Tunable Short-Wave Infrared Polycrystalline GeSn Phototransistors on Noncrystalline Substrates

GeSn is a group-IV alloy with immense potential to advance microelectronics technology due to its intrinsic compatibility with existing Si CMOS processes. With a sufficiently high Sn composition, GeSn is classified as a direct bandgap semiconductor. Polycrystalline GeSn holds several additional advantages, including its significantly lower synthesis cost compared to its epitaxial counterpart, as well as the versatility to grow these films on a variety of substrates. Here, in this work, we present a polycrystalline thin-film GeSn phototransistor on a fused silica substrate with a Sn composition of ~10%, showing a photoresponse in the short-wave infrared wavelength range, critical for emerging sensing applications. This device shows a gate-tunable response, with responsivities approaching up to 1.7 mA/W with only a 30 nm-thick GeSn layer. Furthermore, phototransistors offer additional adaptability through gating, which allows for the reduction of dark current. This not only enhances the signal-to-noise ratio but also offers more flexible integration with various image sensor readout implementations using different substrates. The specific detectivity of this phototransistor is within an order of magnitude of those of previously reported GeSn photodetectors grown by molecular beam epitaxy and chemical vapor deposition, even though the absorber is 3 to 20× thinner while the electrode spacing for photocarrier transport is approximately 15× longer than the carrier diffusion length in this work, showing great potential benefits of extending similar device structures to epitaxial GeSn layers. As these GeSn phototransistors utilize a noncrystalline substrate, our work establishes a fundamentally more versatile path toward monolithically integrated GeSn-based photodetectors for next-generation multimodal sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

GRAPH — an readout ASIC for large MCP based detectors

We present a programmable 16 channel, mixed signal, low power readout ASIC, having the project historically named Gigasample Recorder of Analog waveforms from a PHotodetector (GRAPH). It is designed to read large aperture single photon imaging detectors using micro channel plates for charge multiplication, and measuring the detector's response on crossed strips anodes to extrapolate the incoming photon position. Each channel consists of a fast, low power and low noise charge sensitive amplifier, which provides a myriad of coarse and fine programmable options for gain and shaping settings. Further, the amplified signal is recorded using, to our knowledge novel, the Hybrid Universal sampLing Architecture (HULA) ADC. A kind of mixed signal double buffer memory, that enables concurrent waveform recording, and selected event digitized data extraction. The sampling frequency is freely adjustable between few kHz up to 125 MHz, while the chip's internal digital memory holds a history 2048 samples for each channel, with a digital headroom of 12 bits. An optimized region of interest sample-read algorithm allows to extract the information just around the event pulse peak, while selecting the next event, thus substantially reducing the operational dead time. The chip is designed in 130 nm TSMC CMOS technology, and its power consumption is around 47 mW per channel.

47 OTHER INSTRUMENTATION↗