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DOE OSTI2022

Ultrasonic Testing of Mechanical Changes in a Water-Filled Pipe with Multi-Mode and Broadband Signals and Two-Level Compensation

Ultrasonic testing (UT) has been widely used for the Nondestructive Evaluation (NDE) of pipes due to its many favorable characteristics. However, one of the main challenges in the general use of UT for real-world pipelines is the sensitivity of this method to environmental and operational condition changes. This paper proposes a new UT method with enhanced compensation for environmental effects and operational condition changes. In particular, the effectiveness of the new method is tested in the presence of temperature variations, and changes in water flow rate inside a stainless-steel pipe. The proposed UT method uses multi-mode and broadband guided ultrasonic waves in the pipe walls, excited and received by single-element ultrasonic sensors that are spatially separated, forming a measurement zone between any pair of such transmit and receive sensors. Amplitude changes, time shifts, and frequency content variations in the ultrasonic signal due to temperature changes and water flow are evaluated and compensated for reliable UT of mechanical changes in the pipe. It is observed that spurious effects of water flow on ultrasonic response, if not properly compensated, can dominate over effects due to actual mechanical changes, but such liquid-boundary effects can be compensated effectively by the proposed time- and frequency-filtering method.

47 OTHER INSTRUMENTATION↗

DOE OSTI2020

Passive bias temperature compensation circuit module

A passive bias temperature compensation module for silicon photomultiplier, avalanche photodiodes and similar photodetectors that possess a moderately linear temperature coefficient of gain and that may be compensated by varying an applied bias voltage. The module includes an electrical circuit and a method for determining component values to provide a constant voltage source to stabilize the gain of one or more photodetector devices. A temperature sensor in the module is held in close thermal contact with the photodetector and a filter capacitor is electrically close to the photodetector. The module is based on the concept of temperature sensitive voltage division which is applicable to situations in which large numbers of photodetectors must be gain-compensated for temperature variations over a wide range while maintaining excellent gain matching. The passive bias temperature compensation method enables multiple photodetectors to share a single constant voltage supply without loss of matching performance.

42 ENGINEERING↗

DOE OSTI2020

Sensitivity Analysis of Compensation Topologies for Dynamic WPT System

The dynamic wireless power transfer (DWPT) or in-motion charging of electric vehicles (EVs) may alleviate the challenges encountered by the plug-in charging systems and assist in the penetration of the EVs at a larger scale. Similar to its stationary charging counterpart, DPWT also makes use of compensation circuits to reduce the inductive reactance for enabling higher current on the coupler winding and improve the power transfer. However, the behavior of compensation circuits has not been comprehensively analyzed in a DWPT system. This paper analyzes in detail the performance of three compensation topologies applied to the DWPT system. A combination of finite element analysis (FEA) and circuit analysis is employed to study the compensation topologies when the receiving coil moves over the transmitting coil. Moreover, the variations in operating frequency have also been considered in the analysis. Furthermore, the theoretical calculations for the dynamic WPT system are verified using PLECS simulation model.

Haruna, Josiah↗

DOE OSTI2021

Fail-safe reactivity compensation method for a nuclear reactor

The present invention relates generally to the field of compensation methods for nuclear reactors and, in particular to a method for fail-safe reactivity compensation in solution-type nuclear reactors. In one embodiment, the fail-safe reactivity compensation method of the present invention augments other control methods for a nuclear reactor. In still another embodiment, the fail-safe reactivity compensation method of the present invention permits one to control a nuclear reaction in a nuclear reactor through a method that does not rely on moving components into or out of a reactor core, nor does the method of the present invention rely on the constant repositioning of control rods within a nuclear reactor in order to maintain a critical state.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

DOE OSTI2024

Self-compensation of group-V acceptors in CdTe

Cadmium Telluride is at the core of an important thin-film technology for photovoltaics that is already commercially available, yet the CdTe-based solar cell efficiency remains limited at 22%, well below the theoretical limit of ~30%. Increasing the hole concentration is crucial for higher efficiency, and group-V elements such as As, P, and Sb are potential dopants as they are shallow acceptors. Nevertheless, group-V doped p-type CdTe often exhibits low doping activation, and the compensation source remains debated. Here, we performed hybrid density functional calculations with spin-orbit coupling to investigate possible sources of hole compensation in group-V doped CdTe. First, regarding possible self-compensation of the group-V dopants, we find that the formation of AX centers is unlikely since they are found to be unstable relative to the shallow acceptor forms. However, if the group-V dopants come in during growth (such as dimer molecules As2, P2, and Sb2), we find that the impurity atoms, which would occupy nearest neighbor sites, maintain the V-V bonds, limiting the hole density. For the native defects, our study reveals that Cd interstitial is the lowest energy donor defect in p-type CdTe. Still, it has a small migration barrier of 0.5 eV, making it highly mobile and unstable at room temperature. The Te vacancy is the next lowest formation energy donor. The migration barrier of 1.4 eV indicates that the Te vacancy is stable at room temperature. The antisite CdTe is also a donor, with low formation energy and stable at room temperature, potentially limiting the hole concentration. Our results, therefore, shed light on possible compensation centers and some guidance on how to avoid them.

14 SOLAR ENERGY↗

DOE OSTI2024

Fail-safe reactivity compensation method for a nuclear reactor

Nygaard, Erik T.↗

DOE OSTI2021

Feed-Forward Compensation for Model Predictive Control in Tri-port Current-Source Medium-Voltage String Inverters for PV-Plus-Storage Farms

The novel tri-port current-source medium-voltage string inverter (TCS-MVSI) is a promising candidate for large-scale PV-plus-storage (PVS) farms owing to its galvanic isolation, easy storage integration, soft-switching capability across entire load range, controlled low dv/dt and EMI, benign fault tolerance, etc. Due to its low inertia feature, traditional PI-based control cannot manage large transients effectively. Instead, a model-based predictive control (MPC) is proposed to achieve robust and stable operation. As is well known, the control performance of MPC is compromised by the sampling and computational delay during implementation significantly, if not well addressed. This paper analyzed and quantified these delays and then proposes feed-forward compensation (FFC) for the MPC method to compensate the delays and the large parameter variations due to the low-inertia nature. In addition, this method also compensates for the high dc-link ripple within each switching cycle, a unique issue for low-inertia converters. Here, the proposed method requires low computational effort, allowing it to be extended for multiple ports. The effectiveness of the proposed method has been validated in experiments. In 10 kW test, the proposed method decreases the average dc-link current by 17%, leading to ~20% conduction losses and ~0.5% increase in converter efficiency. In addition, the peak dc-link current also decreases by 15%, resulting in reduced transformer size. As a result, an increased power density can be achieved with the proposed method. Similar improvements have been observed across the power range from 2 kW to 10 kW.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2022

Unblocking Oxygen Charge Compensation for Stabilized High‐Voltage Structure in P2‐Type Sodium‐Ion Cathode

Abstract Layered transition‐metal (TM) oxides are ideal hosts for Li + charge carriers largely due to the occurrence of oxygen charge compensation that stabilizes the layered structure at high voltage. Hence, enabling charge compensation in sodium layered oxides is a fascinating task for extending the cycle life of sodium‐ion batteries. Herein a Ti/Mg co‐doping strategy for a model P2‐Na 2/3 Ni 1/3 Mn 2/3 O 2 cathode material is put forward to activate charge compensation through highly hybridized O 2 p TM 3 d covalent bonds. In this way, the interlayer OO electrostatic repulsion is weakened upon deeply charging, which strongly affects the systematic total energy that transforms the striking P2–O2 interlayer contraction into a moderate solid‐solution‐type evolution. Accordingly, the cycling stability of the codoped cathode material is improved superiorly over the pristine sample. This study starts a perspective way of optimizing the sodium layered cathodes by rational structural design coupling electrochemical reactions, which can be extended to widespread battery researches.

25 ENERGY STORAGE↗

DOE OSTI2022

Implications of rootless geothermal models: Missing processes, parameter compensation, and imposter convection

Numerical models of geothermal systems commonly capture only the top of a reservoir. Deeper areas of the reservoir are simplified to a boundary at the base of the model domain. Commonly, the basal boundary is given either a heat source or a source of mass and enthalpy. Here we developed and present simple numerical experiments which demonstrate that these approaches do not produce the correct model behavior in comparison to a model that captures the entire convecting domain with a heat flux only. We describe a variety of incorrect types of model behavior that arise directly from the choice of boundary condition, independent of the specific parameterization of the model. Heat sources are sensitive to the thickness of the domain and parameters take unphysical values to compensate for the reduced height. The combined mass/heat boundary can produce temperatures that show similarities to circulating geothermal systems, but with incorrect fluid flow and a strong boundary layer focused at the base of the simulated clay cap. These errors likely cause parameters to adjust their values to compensate for the incorrect physics. We highlight these issues and show an example from a developed reservoir model. Initial calibrations to natural state temperature were unsuitable for history matching. The 3D model required parameter adjustments to achieve a more realistic production model. Appropriate mitigation measures should be considered to reduce parameter compensation and improve decision-support models.

15 GEOTHERMAL ENERGY↗

DOE OSTI2022

Dopant Compensation within the Intrinsic Poly-Si Isolation Region in Poly-Si/SiOx Passivated IBC Si Solar Cells

We report on the effect of dopant compensation within intrinsic poly-Si regions between p- and n-type fingers of poly-Si/SiOx passivated interdigitated back contact (IBC) solar cells using intrinsic poly-Si as the isolation region between the doped poly-Si fingers. First, we show that dopants from the doped fingers contaminate the intrinsic gap, resulting in doping of the entire intrinsic gap and overlap of the dopant tails from each finger. Next, we show that despite this doping across the gap, shunting between the doped fingers does not occur. We show that this is a result of trap-assisted compensation creating a highly resistive intrinsic region, preventing shunt. We simulate shunt resistance across the gap based on local carrier concentration and deep trap density. We show that trap defects within the poly-Si enhance compensation between the dopant tails. We experimentally confirm these predictions by scanning spreading resistance microscopy of the gap showing ~20 um domain with resistivity ~10^7 ..omega.. cm. Additionally, Kelvin probe force microscopy are compared to finite element simulations which result in the same approximate shape for potential profile, indicating diode behavior across the isolation region. These results demonstrate the powerful effect that trap defects have within the poly-Si isolation region and suggest that precision patterning is not as essential as once thought.

dopant compensation↗

DOE OSTI2020

Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

A defect quasi Fermi level (dQFL) control process based on above bandgap illumination was applied to control H and V N -complexes, which are the main contributors to the passivation and self-compensation, respectively, in Mg:GaN grown via metalorganic chemical vapor deposition. Secondary ion mass spectrometry measurements confirmed that the total Mg incorporation was unaffected by the process. However, the total H concentration was reduced to similar levels obtained by post-growth thermal activation prior to any annealing treatment. Similarly, the 2.8 eV emission in the photoluminescence spectra, attributed to compensating V N and its complexes, was reduced for the dQFL-process samples. After thermal activation and Ni/Au contact deposition, Hall effect measurements revealed lower resistivities (increased mobilities and free hole concentrations) for dQFL-grown samples with Mg doping concentrations above and below 2 × 10 19 cm -3 . All these results demonstrate that the dQFL process can effectively reduce the H-passivation and self-compensation of the Mg:GaN films.

36 MATERIALS SCIENCE↗

DOE OSTI2020

The role of chemical potential in compensation control in Si:AlGaN

Reduction in compensation in Si-doped Al-rich AlGaN is demonstrated via chemical potential control (CPC). The chemical potentials and the resulting formation energies of carbon on the nitrogen site (C N ) and cation vacancy complex with Si (V III + nSi III ) were related to growth variables through a thermodynamic supersaturation model, which quantitatively predicted the incorporation of C N and the generation of the V III + nSi III complex. The compensation “knee” behavior, i.e., decreasing conductivity with increasing Si incorporation beyond a certain concentration, was successfully controlled. The maximum free carrier concentration was improved by impeding the formation of V III + nSIi III complexes under III-richer conditions, while the impurity compensation by C N was reduced by making the growth environment N-richer. The results of Hall effect measurement and photoluminescence agreed well with quantitative theoretical predictions of the CPC model. Based on the developed model, the highest conductivity of 160 Ω -1 cm -1 with free carrier concentration of 3 × 10 19 cm -3 in Al 0.7 Ga 0.3 N ever reported was achieved on single crystal AlN substrates. The demonstrated predictive power of the CPC model should greatly reduce the empirical analysis or iterative experimentation that would otherwise be necessary.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

AC compensation of 3D magnetic diagnostic signals in DIII-D and National Spherical Torus Experiment-Upgrade (NSTX-U) for real-time application

A time domain algorithm has been developed to remove the vacuum pickup generated by both coil current (DC) and induced vessel current (AC) in real time from three dimensional (3D) magnetic diagnostic signals in the National Spherical Torus Experiment-Upgrade (NSTX-U) and DIII-D tokamaks. The possibility of detecting 3D plasma perturbations in real time is essential in modern and future tokamaks to avoid and control MHD instabilities. The presence of vacuum field pickup, due to toroidally asymmetric (3D) coils or to misalignment between sensors and axisymmetric (2D) coils, pollutes the measured plasma 3D field, making the detection of the magnetic field produced by the plasma challenging. Although the DC coupling between coils and sensors can be easily calculated and removed, the AC part is more difficult. Here, an algorithm based on a layered low-pass filter approach for the AC compensation and its application for DIII-D and NSTX-U data is presented, showing that this method reduces the vacuum pickup to the noise level. Comparison of plasma response measurements with and without vacuum compensation shows that accurate mode locking detection and plasma response identification require precise AC and DC compensations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2025

Anomalous and planar Hall effects in Co 1−x Ho x thin films across the magnetic sublattice compensation temperature

Metallic amorphous ferrimagnets derived from alloying 3d transition metals with 4f-electron rare earths host fascinating effects of compensation between the 3d and 4f magnetic sublattices. Here, a detailed study of the anisotropic magnetoresistance (Δρ xx ), planar Hall effect (ρ xy PHE ), and anomalous Hall effect (ρ xy AHE ) is reported on a series of Co 1−x Ho x thin films over a wide field–temperature (H–T) phase space. Close to the magnetic compensation temperature, the ρ xy AHE –H loops show a double sign reversal and signatures of spin-flop transition at higher fields. The Δρ xx and ρ xy PHE also display strong deviations from the classical angular dependence seen in soft ferromagnets like permalloy as the angle ϕ between in-plane current and magnetic field is scanned from 0 to 2π. It is argued that the non-zero orbital angular momentum of Ho ions in the lattice and stabilization of bubble domains below magnetic saturation may be responsible for such features. Direct imaging of magnetic textures with x-ray photoelectron microscopy shows the formation of stripe domain patterns in the regime of sublattice compensation. Such stripes are likely to transform into magnetic bubbles before full saturation is reached in a large magnetic field.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Nernst power factor and figure of merit in the compensated semimetal ScSb

Recently, topological semimetals have emerged as strong candidates for solid-state thermomagnetic refrigerators due to their enhanced Nernst effect. This enhancement arises from the combined contributions of the Berry-curvature-induced anomalous Nernst coefficient associated with topological bands and the normal Nernst effect resulting from synergistic electron-hole compensation. Generally, these two effects are intertwined in topological semimetals, making it challenging to evaluate them independently. Here, we report the observation of a high Nernst effect in the electron-hole compensated semimetal ScSb with topologically trivial electronic band structures. Remarkably, we find a high maximum Nernst power factor of 𝑃⁢𝐹 𝑁 ∼ 35 × 10 −4 W m −1 K −2 in ScSb. The Nernst thermopower (𝑆 𝑥⁢𝑦 ) exhibits a peak of ∼ 47 µ⁢V/K at 12 K and 14 T, yielding a Nernst figure of merit (𝑧 𝑁 ) of ∼ 28 × 10 −4 K −1 . Notably, despite its trivial electronic band structure, both the 𝑃⁢𝐹 𝑁 and 𝑧 𝑁 values of ScSb are comparable to those observed in topological semimetals with Dirac band dispersions. In conclusion, the origin of the large Nernst signal in ScSb is explained by compensated electron and hole carriers, through Hall resistivity measurements, angle-resolved photoemission spectroscopy, and density functional theory calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Self-compensating light calorimetry with liquid argon time projection chamber for GeV neutrino physics

The Liquid Argon Time Projection Chamber (LArTPC) is a powerful dual calorimeter capable of estimating particle energy from both ionization charge and scintillation light. Here, our study shows that, due to the recombination luminescence, the LArTPC functions as a self-compensating light calorimeter: the missing energy in the hadronic component is compensated for by the increased luminescence relative to the electromagnetic component. Using 0.5-5 GeV electron neutrino charged current interactions as a case study, we show that good compensation of the electron-to-hadron response ratio (e/h) from 1-1.05 can be achieved across a broad range of drift electric fields (0.2-1.8 kV / cm), with better performance for neutrino energies above 2 GeV. This study highlights the potential of light calorimetry in LArTPCs for GeV neutrino energy reconstruction, complementing traditional charge calorimetry. Under ideal conditions of uniform light collection, we show that LArTPC light calorimetry can achieve an energy resolution comparable to the charge imaging calorimetry. Challenges arising from nonuniform light collection in large LArTPCs can be mitigated with a position-dependent light yield correction derived from 3D charge signal imaging.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2025

Site-Selective Polar Compensation of Mott Electrons in a Double-Perovskite Heterointerface

Double-perovskite oxides (DPOs) with two transition metal ions ($A_{2}BB'O_{6}$) offer a fascinating platform for exploring exotic physics and practical applications. Studying these DPOs as ultrathin epitaxial films on single crystalline substrates can add another dimension to engineering electronic, magnetic, and topological phenomena. Understanding the consequence of polarity mismatch between the substrate and the DPO would be the first step toward this broad goal. Here, we investigate this by studying the interface between a prototypical insulating DPO $Nd_{2}NiMnO_{6}$ and a wide band gap insulator $SrTiO_{3}$. The interface is found to be insulating in nature. By combining several experimental techniques and density functional theory, we establish a site-selective charge compensation process that occurs explicitly at the Mn site of the film, leaving the Ni sites inert. We further demonstrate that such surprising selectivity, which cannot be explained by existing mechanisms of polarity compensation, is directly associated with their electronic correlation energy scales. This study establishes the crucial role of Mott physics in polar compensation process and paves the way for designer doping strategies in complex oxides.

density functional theory↗

DOE OSTI2024

Interfacial magnetic characteristics of nearly compensated gadolinium iron garnet

Reports on spin Hall magnetoresistance, magnonic spin currents from thermal gradients, and spin transfertorque magnetic random-access memory using compensated ferrimagnets largely discuss bulk magnetization but lack consideration of depth profiles or interfacial characteristics. Here, magnetic and structural characterization of profiles and interfaces was performed for nearly compensated gadolinium iron garnet (GdIG) thin films. X-ray diffraction and reciprocal space maps show that sputter deposited GdIG on Si is polycrystalline with the desired cubic garnet phase, and GdIG on gadolinium gallium garnet (GGG) is epitaxial with <0.06% compressive strain. Temperature-dependent magnetometry confirms the compensation temperatures of GGG/GdIG and Si/GdIG to be 285 and 260 K, respectively, both near room temperature. Interestingly, these measurements suggest the presence of unsaturated rare-earth moments, which result in a characteristic hysteresis between heating and cooling sequences in the magnetization-temperature curves at zero field. Depth-profile measurements from polarized neutron reflectometry (PNR) indicate up to 91% volume fraction in GdIG on Si. At the interface, PNR reveals a region containing magnetized Fe-doped GGG, a low-density GdIG at the GGG/GdIG interface, and a thin magnetically dead layer at the Si/GdIG interface. Cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy confirm the assessment of PNR. In conclusion, the magnetic characteristics of interfacial regions are attributed to intermixing of Fe-Ga at the GGG/GdIG interface and the presence of amorphous Fe-Si at the Si/GdIG interface.

36 MATERIALS SCIENCE↗