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Thermal constriction resistance due to nonuniform metal surface conditions, considering macroscopic contact resistance for nonuniform interface pressure distribution
While different methods exist to determine the contact resistivity in semiconductor devices, these methods are limited to measurement of the majority carrier contacts. The measurement of p‐ or n‐type contacts on n‐ or p‐type crystalline silicon, respectively, is challenging due to the blocking diode formed by the p–n junction. In this article, we address this problem for tunneling oxide passivating contacts used in high‐efficiency Si solar cells. We propose a universal method to extract contact resistivity on symmetric test structures with polycrystalline silicon on SiO x (poly‐Si/SiO x ) passivating contacts under illumination, both for p–n and high–low‐junction passivated contacts. In this method, we demonstrate that the total contact resistance of each cell grid finger to the base wafer is governed by its effective contact area, defined by the transfer length extending from both sides of the finger. Therefore, the grid contact resistance of a poly‐Si contact depends on the ratio of the doped poly‐Si sheet resistance to the tunneling contact resistivity.
Abstract This paper reports the magnetic field and winding force-dependent contact resistance, also known as characteristic resistance, of no-insulation (NI) REBCO coil. Three NI coils were wound with different winding forces ( < 1 kgf, 3 kgf, and 5 kgf) using the same REBCO-coated conductor, and they were tested at 4.2 K in a background field of 0, 5, 10, and 14 T. The contact resistance of each coil is measured at each field. As a result of the measurements, we draw two conclusions. First, a quadratic function for magnetic field intensity reasonably reproduces the measurement results of each NI test coil’s magnetic field-dependent contact resistance, where the practical fit function’s coefficients are determined depending on the winding force. Second, the contact resistance of each coil is partially inconsistent with the magnetoresistance of the electroplated material, i.e. copper, of the REBCO-coated conductor. This paper will present the measurement results in detail, discuss them with Kohler’s rule, and formulate the contact resistance using winding force and magnetic field terms.
Extremely low alloyed and nonalloyed ohmic contact resistances have been formed on n-type InAs/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As structures grown on InP(Fe) by molecular-beam epitaxy. To insure the accuracy of the small contact resistances measured, an extended transmission line model was used to extrapolate contact resistances from test patterns with multiple gap spacings varying from 1 to 20 microns. For a 150-A-thick InAs layer doped to 2 x 10 to the 18th/cu cm and a 0.1-micron-thick InGaAs layer doped to 1 x 10 to the 18th/cu cm, a specific contact resistance of 2.6 x 10 to the -8th ohm-asterisk sq cm was measured for the nonalloyed contact, while a resistance less than 1.7 x 10 to the -8th ohm-asterisk sq cm is reported for the alloyed contact. Conventional Au-Ge/Ni/Au was used for the ohmic metal contact and alloying was performed at 500 C for 50 s in flowing H2. Using a thermionic field emission model, the barrier height at the InAs/InGaAs interface was calculated to be 20 meV.
Thermal contact resistance in vacuum environment predicted, using constriction model
Macroscopic constriction influence on thermal contact resistance in vacuum environment
Reducing friction and contact resistance of sliding electrical contacts of beryllium by gallium lubrication in vacuum
Low speed Ga lubricated sliding electrical contacts of Be in vacuum, discussing Ga film role in friction and contact resistance
Accurate characterization of the intrinsic contact resistance is important for the optimization of organic thin-film transistors (OTFTs), especially in devices with high gate capacitance density. This study reports on a method for the extraction of the intrinsic, or gate-voltage independent, contact resistance from OTFTs. In contrast to the transfer length method (TLM), this method can be applied to devices with a single geometry. The method is an extension of the previously reported Y-function method and combines the model proposed by S. Luan et al. to analyze the effect of the gate voltage on the contact resistance. Here, this method is first applied to OTFTs with a bottom-gate top-contact geometry having varying gate capacitance density values. The intrinsic contact resistance is found to decrease with increased gate capacitance density with values ranging between 4 kΩcm and under 1 kΩcm when the gate capacitance is changed from 36.6 nF/cm 2 to 231.7 nF/cm 2 , respectively. These values are in good agreement with those obtained using TLM experiments. The new method is also shown to be applicable to OTFTs with top-gate bottom contact geometry.
A mixed boundary-value problem is formulated for an imperfect rectangular contact to a semiconducting sheet (layer). An exact model for derivation of contact resistance is developed and its solution by conformal mapping and eigenfunction expansion is presented. The expression for contact resistance is similar to that for a perfect (lossless) contact but includes an additional term containing the lowest-order coefficient in the infinite series expansion of the complex potential function. The calculated contact resistances are compared with those obtained from three approximate models: lossless contact, transmission line, and extended transmission line models. The extended transmission line model appears to be a very satisfactory approximation provided the ratio of contact length to sheet thickness is no less than 0.5.
Abstract Many high-temperature superconductor (HTS) applications require superconducting cables with high currents while operating in an alternating magnetic field. HTS cables should be composed of numerous superconducting tapes to achieve the required current capacity. Alternating current and magnetic fields cause AC losses in such cables and can provoke conductor instability. AC losses and contact resistances were measured of several cable designs based on commercially available REBCO tapes at the University of Twente. The AC loss was measured under identical conditions for eight REBCO conductors manufactured according to three types of cabling methods—CORC ® (Conductor on Round Core), Roebel, and stacked tape, including a full-size REBCO CICC (cable in conduit conductor). The measurements were done at T = 4.2 K without transport current in a sinusoidal AC magnetic field of 0.4 T amplitude and frequencies from 5 to 55 mHz. The AC loss was measured simultaneously by calibrated gas flow calorimeter utilizing the helium boil-off method and by the magnetization method using pick-up coils. Also, the AC loss of two CORC® conductors and a Roebel cable was measured at 77 K. Each conductor was measured with and without background field of 1 T. The measured AC coupling loss in the CORC ® and Roebel conductors is negligible at 4.2 K for the applied conditions while at 77 K coupling loss was observed for all conductors. The absence of coupling loss at 4.2 K can be explained by shielding of the conductor interior; this is confirmed with measurement and calculation of the penetration field of CORC ® and Roebel cables. The inter-tape contact resistance was measured for CORC ® and stacked tape samples at 4.2 and 77 K. It was demonstrated that a short heat treatment of CORC ® conductor with solder-coated tapes activates tape-to-tape soldering and decreases the contact resistance. The reduction of contact resistance by two orders in magnitude to tens of nΩm is comparable with the interstrand contact resistance in ITER Nb 3 Sn type conductors.
The importance of thermal contact resistance between layers in heat transfer through two layer, plasma sprayed, thermal barrier coatings applied to turbine vanes was investigated. Results obtained with a system of NiCrAlY bond and yttria stabilized zirconia ceramic show that thermal contact resistance between layers is negligible. These results also verified other studies which showed that thermal contact resistance is negligible for a different coating system of NiCr bond calcia stabilized zirconia ceramic. The zirconia stabilized ceramic thermal conductivity data scatter presented in the literature is ?20 to -10 percent about a curve fit of the data. More accurate predictions of heat transfer and metal wall temperatures are obtained when the thermal conductivity values are used at the ?20 percent level.
A method is disclosed for scribing at least three grid contacts of a photovoltaic cell to electrically isolate them from the grid contact pattern used to collect solar current generated by the cell, and using the scribed segments for determining parameters of the cell by a combination of contact end resistance (CER) measurements using a minimum of three equally or unequally spaced lines, and transmission line modal (TLM) measurements using a minimum of four unequally spaced lines. TLM measurements may be used to determine sheet resistance under the contact, R.sub.sk, while CER measurements are used to determine contact resistivity, .rho..sub.c, from a nomograph of contact resistivity as a function of contact end resistance and sheet resistivity under the contact. In some cases, such as the case of silicon photovoltaic cells, sheet resistivity under the contact may be assumed to be equal to the known sheet resistance, R.sub.s, of the semiconductor material, thereby obviating the need for TLM measurements to determine R.sub.sk.
REBCO coated conductor has demonstrated high current capacity that can enable high-field magnets for high energy physics and fusion applications. However, quench protection is still one of the main challenges to be addressed for these applications. In addition, Ic and n value variations along the length of REBCO tapes exist in commercial production. The inter-tape contact resistance plays a key role to develop the self protection capability in cables and magnets by enabling current sharing and suppressing excessive eddy currents. Here we propose an electric-circuit model to describe the inter-tape contact resistance and its impact on the current sharing between REBCO tapes. We report the experiments on a 2-stacked tape REBCO cable with local Ic drop to validate the model. With the developed model, we study the upper limit of the contact resistance which allows current sharing between tapes. We also study the impact of variation in Ic and n values in tapes on the cable performance. Finally, our model is expected to provide useful insight into the current sharing and target values for inter-tape contact resistance in REBCO cables and magnets for various applications.
Mathematical model of macroscopic elastic contact between mating members for predicting thermal contact resistance in vacuum environment
Similar or dissimilar materials thermal contact resistance in vacuum with negligible film effect, obtaining constriction resistance
Surface roughness and waviness effects on thermal resistance between contacting solids
The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs |, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs |, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×