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Results for “CONTACT RESISTANCE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Method for contact resistivity measurements on photovoltaic cells and cell adapted for such measurement

A method is disclosed for scribing at least three grid contacts of a photovoltaic cell to electrically isolate them from the grid contact pattern used to collect solar current generated by the cell, and using the scribed segments for determining parameters of the cell by a combination of contact end resistance (CER) measurements using a minimum of three equally or unequally spaced lines, and transmission line modal (TLM) measurements using a minimum of four unequally spaced lines. TLM measurements may be used to determine sheet resistance under the contact, R.sub.sk, while CER measurements are used to determine contact resistivity, .rho..sub.c, from a nomograph of contact resistivity as a function of contact end resistance and sheet resistivity under the contact. In some cases, such as the case of silicon photovoltaic cells, sheet resistivity under the contact may be assumed to be equal to the known sheet resistance, R.sub.s, of the semiconductor material, thereby obviating the need for TLM measurements to determine R.sub.sk.

Burger, Dale R.↗

Thermal contact resistance in vacuum.

Similar or dissimilar materials thermal contact resistance in vacuum with negligible film effect, obtaining constriction resistance

THERMAL CONDUCTOR↗

The achievement of low contact resistance to indium phosphide: The roles of Ni, Au, Ge, and combinations thereof

We have investigated the electrical and metallurgical behavior of Ni, Au-Ni, and Au-Ge-Ni contacts on n-InP. We have found that very low values of contact resistivity rho(sub c) in the E-7 omega-sq cm range are obtained with Ni-only contacts. We show that the addition of Au to Ni contact metallization effects an additional order of magnitude reduction in rho(sub c). Ultra-low contact resistivities in the E-8 omega-sq cm range are obtained with both the Au-Ni and the Au-Ge-Ni systems, effectively eliminating the need for the presence of Ge in the Au-Ge-Ni system. The formation of various nickel phosphides at the metal-InP interface is shown to be responsible for the observed rho(sub c) values in the Ni and Au-Ni systems. We show, finally, that the order in which the constituents of Au-Ni and Au-Ge-Ni contacts are deposited has a significant bearing on the composition of the reaction products formed at the metal-InP interface and therefore on the contact resistivity at that interface.

Fatemi, Navid S.↗

Thermal Contact Resistance

Thermal, surface, and deformation analyses for predicting thermal contact resistance for metal surface characteristics in vacuum and fluid environment

METAL SURFACE↗

Contact-resistance process cliff

Several approaches were investigated to obtain a measure of the quality of the contact resistance between metal and a diffused or polysilicon layer. These approaches have included the use of both short and very long contact strings as well as arays of contacts with different sizes to determine the contact resistance process cliff. Results from these approaches are discussed.

Pina, C. A.↗

Measurements of the effects of thermal contact resistance on steady state heat transfer in phosphoric-acid fuel cell stack

The influence of the thermal contact resistance on the heat transfer between the electrode plates, and the cooling system plate in a phosphoric-acid fuel-cell stack was experimentally investigated. The investigation was conducted using a set-up that simulates the operating conditions prevailing in a phosphoric acid fuel-cell stack. The fuel-cell cooling system utilized three types of coolants, water, engine oil, and air, to remove excess heat generated in the cell electrode and to maintain a reasonably uniform temperature distribution in the electrode plate. The thermal contact resistance was measured as a function of pressure at the interface between the electrode plate and the cooling system plate. The interface pressure range was from 0 kPa to 3448 kPa, while the Reynolds number for the cooling limits varied from 15 to 79 for oil, 1165 to 6165 for water, and 700 to 6864 for air. Results showed that increasing the interface pressure resulted in a higher heat transfer coefficient.

Abdul-Aziz, Ali↗

Formula Gives Better Contact-Resistance Values

Lateral currents in contact strips taken into account. Four-terminal test structures added to intergrated circuits to enable measurement of interfacial resistivities of contacts between thin conducting layers. Thin-film model simplified quasi-two-dimensional potential model that accounts adequately for complicated three-dimensional, nonuniform current densitites. Effects of nonuniformity caused by lateral current flow in strips summarized in equivalent resistance Rs and voltage Vs.

Lieneweg, Udo↗

Contact resistivities of sputtered TiN and Ti-TiN metallizations on solar-cell-type-silicon

The resistivities of TiN and Ti-TiN contacts on a shallow junction solar-cell-type silicon substrate have been determined by the method of the transmission line model. The contacts investigated are shown to be suitable for standard solar cells from an electrical point of view. Contact resistivity values of the order of 0.0001 ohm/sq cm as obtained for the n(+)Si-TiSi2-TiN contact system may be acceptable for concentrations up to 100 times, but lower values are necessary beyond this point.

Maenpaa, M.↗