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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Defect structure, mechanical behavior, electrical and optical properties, magnetic, thermodynamic, and thin film properties of solid materials and crystals
Relation in silicon between annealing rates, residual damage and defect concentrations, noting link to activation energy increase
Charge compensation defects influence on UV EXCITATION spectrum of rare earth doped crystals fluorescence
Thermal neutron induced defects in cadmium sulfide and cadmium telluride
Electron spin resonance measurements on P-doped silicon - vacancy phosphorus defect
Proton irradiation effects on electric properties and defect configurations of bismuth telluride
Defect introduction in n-silicon crystal by irradiation with high energy electron
Paired defect production rate in silicon created in single electron scattering event
Defects in single crystals of bismuth telluride caused by proton irradiation
Feasibility of using quenched-in defect technique to study effect of rhenium on vacancy clustering in Mo-35Re
Production and annealing of intrinsic defects in X-ray irradiated CdS single crystals
Isochronal annealing from 80 to 360 degrees K of defects induced by 45-mev electrons in floating zone and pulled n-type silicon
Radiation effect on silicon - introduction rates of vacancy-phosphorus defect and divacancy in p-type material for solar cell application
Defect structures in ion emission images of metals and stress distributions under imaging conditions studied with field ion microscope
Equivalence of stress and electron-irradiation induced defects in degenerate p-n germanium junctions as indicated in similar voltage-anneal characteristics
Defect impurity relation in electron damaged p-type silicon and electron irradiation effect on float zone n-type silicon
Characteristics and properties of defects induced in silicon and germanium by 10- to 60-mev electrons and 20- to 130-mev protons
Annealing behavior and uniaxial stress response of radiation induced defects in Si causing 1.8, 3.3 and 3.9 micron IR absorption bands examined via EPR studies