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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Quantitative Morphological Characterization of Carbide Inclusions in Uranium Metal

Uranium carbides (UCs) are prevalent inclusions in U metal that form during melting operations from interactions with crucible walls and the casting chamber atmosphere. Although UCs have been studied extensively since the beginning of U metal foundry operations, there are still unknowns regarding the effects of thermomechanical processing on their sizes and morphology. Here, we present the results of a series of controlled cooling experiments with molten uranium to elucidate the effect of cooling rate on inclusion morphology in a-U. Samples were melted using a vacuum induction melter and manually cooled at rates of 2.5, 1.7, 1.1, 0.8, 0.3 (± 1%) K/s from ~1600 K to <700 K in under 1 hour. Subsequent scanning electron microscopy (SEM) was performed on cross-sections of the samples, revealing a complex mixture of UC morphologies that are indicative of diffusion and growth influenced by the thermal processing of the U matrix. Image analysis using the Morphological Analysis of Materials (MAMA) software showed that UC sizes generally grew larger with slower cooling rates, and the two slowest cooling rates noticeably impacted the inclusion circularity and ellipse aspect ratio. These results indicate that UC morphology is sensitive to short cooling rates (<1 hour) and could therefore be controlled in the production of metallic nuclear fuels. Additionally, inclusion speciation and morphologies could potentially provide forensic clues about processing history of unknown metal samples. Understanding the driving forces involved in UC morphology evolution is beneficial for evaluating metal fuels for next generation nuclear reactors and for identifying signatures for nuclear forensics.

Athon, Matthew T.↗
DOE OSTI2021

Direct methane activation by atomically thin platinum nanolayers on two-dimensional metal carbides

We report efficient and direct conversion of methane to value-added products has been a long-term challenge in shale gas applications. Here, we show that atomically thin nanolayers of Pt with a single or double atomic layer thickness, supported on a two-dimensional molybdenum titanium carbide (MXene), catalyse non-oxidative coupling of methane to ethane/ethylene (C 2 ). Kinetic and theoretical studies, combined with in-situ spectroscopic and microscopic characterizations, demonstrate that Pt nanolayers anchored at the hexagonal close-packed sites of the MXene support can activate the first C–H bond of methane to form methyl radicals that favour desorption over further dehydrogenation and thus suppress coke deposition. At 750 °C and 7% methane conversion, the catalyst runs for 72 hours of continuous operation without deactivation and exhibits >98% selectivity towards C 2 products, with a turnover frequency of 0.2–0.6 s -1 . Our findings provide insights into the design of highly active and stable catalysts for methane activation and create a platform for developing atomically thin supported metal catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1973

Irradiation test of tungsten clad uranium carbide-zirconium carbide ((U,Zr)C) specimens for thermionic reactor application at conditions conductive to long-term performance

Uranium carbide fueled, thermionic emitter configurations were encapsulated and irradiated. One capsule contained a specimen clad with fluoride derived chemically vapor deposited (CVD) tungsten. The other capsule used a duplex clad specimen consisting of chloride derived on floride derived CVD tungsten. Both fuel pins were 16 millimeters in diameter and contained a 45.7-millimeter length of fuel.

Creagh, J. W. R.↗
NASA NTRS1949

Heat Transfer from High-Temperature Surfaces to Fluids. III - Correlation of Heat-Transfer Data for Air Flowing in Silicon Carbide Tube with Rounded Entrance, Inside Diameter of 3/4 Inch, and Effective Length of 12 Inches: Correlation of Heat-Transfer Data for Air Flowing in Silicon Carbide Tube with Rounded Entrance, Inside Diameter of 3/4 Inch, and Effective Length of 12 Inches - Part 3

A heat-transfer investigation was conducted with air flowing through an electrically heated silicon carbide tube with a rounded entrance, an inside diameter of 3/4 inch, and an effective heat-transfer length of 12 inches over a range of Reynolds numbers up to 300,000 and a range of average inside-tube-wall temperature up to 2500 R. The highest corresponding local outside-tube-wall temperature was 3010 R. Correlation of the heat-transfer data using the conventional Nueselt relation wherein physical properties of the fluid were evaluated at average bulk temperature resulted in a separation of data with tube-wall-temperature level. A satisfactory correlation of the heat-transfer data was obtained, however, by the use of modified correlation parameters wherein the mass velocity G (or product of average air density and velocity evaluated at bulk temperature P(sub b)V(sub b)) in the Reynolds number was replaced by the product of average air velocity evaluated at the bulk temperature and density evaluated at either the average inside-tube-wall temperature or the average film temperature; in addition, all the physical properties of air were correspondingly evaluated at either the average inside-tube-wall temperature or the average film temperature.

Sams, Eldon W.↗
DOE OSTI2021

Temperature dependence of irradiation-induced nanocrystallization in amorphous silicon carbide

Ion irradiation induced nucleation and growth in amorphous SiC at elevated temperatures are investigated in this study. Both as-deposited amorphous and Kr ion irradiation-amorphized SiC films are used for the investigation. Similar behavior of particle precipitation in the two types of the films is observed. It is found that the threshold temperature for nucleation is between 550 and 700 K, which is considerably higher than the critical temperature for full amorphization in SiC irradiated with Kr ions. There is a temperature regime up to at least 900 K, where the growth rates are only weakly dependent of the irradiation temperature. This temperature regime is potentially useful to tailor the size and density of nanocrystalline SiC precipitates by optimizing the ion irradiation conditions.

Ion irradiation, Nucleation and Growth, Silicon Ca↗
NASA NTRS1978

Determination of the pure silicon monocarbide content of silicon carbide and products based on silicon carbide

Experience has shown that different methods of analysis of SiC products give different results. Methods identified as AFNOR, FEPA, and manufacturer P, currently used to detect SiC, free C, free Si, free Fe, and SiO2 are reviewed. The AFNOR method gives lower SiC content, attributed to destruction of SiC by grinding. Two products sent to independent labs for analysis by the AFNOR and FEPA methods showed somewhat different results, especially for SiC, SiO2, and Al2O3 content, whereas an X-ray analysis showed a SiC content approximately 10 points lower than by chemical methods.

Prost, L.↗
NASA NTRS1989

Improved silicon carbide for advanced heat engines. II - Pressureless sintering and mechanical properties of injection molded silicon carbide

The influence on density and strength of pressureless sintering in vacuum and argon environments has been evaluated with injection molded SiC materials. Main effects and two factor interactions of sintering (cycle variables temperature, time, heating rate, and atmosphere) were assessed. An improved understanding of the influence of the processing flaws and sintering conditions has been obtained. Strength and density have improved from a baseline level of 299 MPa (43.3 Ksi) and 94 pct of theoretical density to values greater than 483 MPa (70 Ksi) and 97 pct.

Whalen, Thomas J.↗
NASA NTRS1989

Thermoelastic micromechanical stresses associated with a large alpha-silicon carbide grain in a polycrystalline beta-silicon carbide matrix

The thermoelastic micromechanical stresses associated with a single large hexagonal alpha-SiC grain within a fine-grain-size cubic (3C) beta-SiC matrix were calculated. The naturally occurring residual stresses which are created during cooling from the processing temperatures and the effects of superimposed applied external stresses are both considered. A significant effect of the shape or geometry of the alpha-SiC grain is revealed, with the largest residual stresses associated with the naturally occurring tabular or platelet structure. The stresses are compared with the published strength results for these materials, which suggests that the residual stresses assume a significant role in the strength reduction that is observed.

Li, Zhuang↗