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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

On the wide-range bias dependence of transistor d.c. and small-signal current gain factors.

Critical reappraisal of the bias dependence of the dc and small-signal ac current gain factors of planar bipolar transistors over a wide range of currents. This is based on a straightforward consideration of the three basic components of the dc base current arising due to emitter-to-base injected minority carrier transport, base-to-emitter carrier injection, and emitter-base surface depletion layer recombination effects. Experimental results on representative n-p-n and p-n-p silicon devices are given which support most of the analytical findings.

Schmidt, P.↗
NASA NTRS1979

The role of Na/+/ in transport processes of bacterial membranes

Until recently it was generally held that transport in bacteria was linked exclusively to proton circulation, in contrast to most eucaryotic systems, which depended on Na(+) circulation. The present review is intended to trace recent developments which have led to the discarding of this idea. The discussion covers transport of Na(+) and other cations, effects of Na(+) and Na(+) gradients on metabolite transport, properties of Na(+)-dependent transport carriers, and evolutionary considerations of Na(+) transport. It is now apparent that the transport of Na(+) is an important part of energy metabolism in bacteria, and that Na(+) gradients as well as H(+) gradients are used in these systems for the conservation and transmission of energy. Two hypotheses are proposed to explain the evolution of Na/K systems, and it is presently difficult to decide between them.

Lanyi, J. K.↗
NASA NTRS1993

Beem Spectroscopy of Electron Transport Through A1As/GaAs Heterostructures

BEEM spectroscopy has been used to characterize hot carrier transport through A1As/GaAsheterostructures. The dependence of electron transmission on A1As thickness has been directlymeasured, and the position of the A1As L_1 minima, which has been subject to some uncertainty inthe past, has been determined. First-principles transmission calculations, based on a tight-bindingformalism, are compared to the results of BEEM spectroscopy.

Kaiser, W. J.↗
NASA NTRS1986

Passivation of Si solar cells by hetero-epitaxial compound semiconductor coatings

A development status evaluation is made for high efficiency Si solar cells, with emphasis on the suppression of the deleterious effects of surface recombination. ZnS(0.9)Se(0.1) and GaP are identified as candidates for the reduction of surface recombination. Attention is given to methods developed for the deposition of heteroepitaxial compounds designed to block minority carrier transport to the Si solar cell surface without interfering with the majority carrier flow.

Vernon, S. M.↗
NASA NTRS1986

Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon

Carrier transport and recombination parameters in heavily doped silicon were examined. Data were presented for carrier diffusivity in both p- and n-type heavily doped silicon covering a broad range of doping concentrations from 10 to the 15th power to 10 to the 20th power atoms/cu cm. One of the highlights of the results showed that minority carrier diffusivities are higher by a factor of 2 in silicon compared to majority carrier diffusivities.

Swirhun, S. E.↗
NASA NTRS2007

The International Space Station as a Research Laboratory: A View to 2010 and Beyond

Assembly of International Space Station (ISS) is expected to be complete in 2010, with operations planned to continue through at least 2016. As we move nearer to assembly complete, replanning activities by NASA and ISS International Partners have been completed and the final complement of research facilities on ISS is becoming more certain. This paper will review pans for facilities in the US On-orbit Segment of ISS, including contributions from International Partners, to provide a vision of the research capabilities that will be available starting in 2010. At present, in addition to research capabilities in the Russian segment, the United States Destiny research module houses nine research facilities or racks. These facilities include five multi-purpose EXPRESS racks, two Human Research Facility (HRF) racks, the Microgravity Science Glovebox (MSG), and the Minus Eighty-degree Laboratory Freezer for ISS (MELFI), enabling a wide range of exploration-related applied as well as basic research. In the coming years, additional racks will be launched to augment this robust capability: Combustion Integrated Rack (CIR), Fluids Integrated Rack (FIR), Window Observation Rack Facility (WORF), Microgravity Science Research Rack (MSRR), Muscle Atrophy Research Exercise System (MARES), additional EXPRESS racks and possibly a second MELFI. In addition, EXPRESS Logistics Carriers (ELC) will provide attach points for external payloads. The European Space Agency s Columbus module will contain five research racks and provide four external attach sites. The research racks are Biolab, European Physiology Module (EPM), Fluid Science Lab (FSL), European Drawer System (EDS) and European Transport Carrier (ETC). The Japanese Kibo elements will initially support three research racks, Ryutai for fluid science, Saibo for cell science, and Kobairo for materials research, as well as 10 attachment sites for external payloads. As we look ahead to assembly complete, these new facilities represent a threefold increase from the current research laboratory infrastructure on ISS. In addition, the increase in resident crew size will increase from three to six in 2009, will provide the long-term capacity for completing research on board ISS. Transportation to and from ISS for crew and cargo will be provided by a fleet of vehicles from the United States, Russia, ESA and Japan, including accommodations for thermally-conditioned cargo. The completed ISS will have robust research accommodations to support the multidisciplinary research objective of scientists worldwide.

Uri, John J.↗
NASA NTRS1998

Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques

A density-gradient (DG) model is used to calculate quantum-mechanical corrections to classical carrier transport in MOS (Metal Oxide Semiconductor) inversion/accumulation layers. The model is compared to measured data and to a fully self-consistent coupled Schrodinger and Poisson equation (SCSP) solver. Good agreement is demonstrated for MOS capacitors with gate oxide as thin as 21 A. It is then applied to study carrier distribution in ultra short MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) with surface roughness. This work represents the first implementation of the DG formulation on multidimensional unstructured meshes. It was enabled by a powerful scripting approach which provides an easy-to-use and flexible framework for solving the fourth-order PDEs (Partial Differential Equation) of the DG model.

Rafferty, Connor S.↗
NASA NTRS1974

Thermally-restorable optical degradation and the mechanism of current transport in Cu2S-CdS photovoltaic cells

The photovoltaic properties of single-crystal Cu2S-CdS heterojunctions have been investigated as a function of heat treatment by detailed measurements of the dependence of short-circuit current on photon energy, temperature, and the state of optical degradation or enhancement. A coherent picture is formulated for the relationship between enhancement and optical degradation, and their effect on the transport of short-circuit photoexcited current and dark, forward-bias current in the cell. Optical degradation in the Cu2S-CdS cell is shown to be closely identical to optical degradation of lifetime in a homogeneous CdS:Cd:Cu crystal, indicating that the CdS:Cu layer near the junction interface controls carrier transport in the cell. It is proposed that both the photoexcited short-circuit current and the dark, forward-bias current are controlled by a tunneling-recombination process through interface states.

Fahrenbruch, A. L.↗
NASA NTRS1989

Solution of the hydrodynamic device model using high-order non-oscillatory shock capturing algorithms

A micron n+ - n - n+ silicon diode is simulated via the hydrodynamic model for carrier transport. The numerical algorithms employed are for the non-steady case, and a limiting process is used to reach steady state. The simulation employs shock capturing algorithms, and indeed shocks, or very rapid transition regimes, are observed in the transient case for the coupled system, consisting of the potential equation and the conservation equations describing charge, momentum, and energy transfer for the electron carriers. These algorithms, termed essentially non-oscillatory, were successfully applied in other contexts to model the flow in gas dynamics, magnetohydrodynamics, and other physical situations involving the conservation laws in fluid mechanics. The method here is first order in time, but the use of small time steps allows for good accuracy. Runge-Kutta methods allow one to achieve higher accuracy in time if desired. The spatial accuracy is of high order in regions of smoothness.

Fatemi, Emad↗
NASA NTRS1991

Solution of the hydrodynamic device model using high-order non-oscillatory shock capturing algorithms

A micron n+ - n - n+ silicon diode is simulated via the hydrodynamic model for carrier transport. The numerical algorithms employed are for the non-steady case, and a limiting process is used to reach steady state. The simulation employs shock capturing algorithms, and indeed shocks, or very rapid transition regimes, are observed in the transient case for the coupled system, consisting of the potential equation and the conservation equations describing charge, momentum, and energy transfer for the electron carriers. These algorithms, termed essentially nonoscillatory, were successfully applied in other contexts to model the flow in gas dynamics, magnetohydrodynamics, and other physical situations involving the conservation laws in fluid mechanics. The method here is first order in time, but the use of small time steps allows for good accuracy. Runge-Kutta methods allow one to achieve higher accuracy in time if desired. The spatial accuracy is of high order in regions of smoothness.

Fatemi, Emad↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Bullis, W. M.↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗
NASA NTRS1971

Photoemf in cadmium sulfide

Theoretical and experimental investigations on CdS single crystals and CuxS:CdS photovoltaic cells prepared from CdS single crystals by a chemical-dip procedure are described. The studies are aimed at clarifying cell mechanisms which affect key cell properties (efficiency, reliability, and lifetime) by examining the properties of intrinsic and extrinsic defects in the junction and surface regions and their effects on carrier transport through these regions. The experimental research described includes studies of thermal, infrared, and field quenching of acceptor-doped CdS crystals; investigation of optical and electrical properties of CuxS:CdS photovoltaic cells (current-voltage characteristics, spectral distribution of photocurrent and photovoltage) and the dependence of these properties on temperature and light intensity; measurement of changes, as a result of heat treatment in ultrahigh vacuum, in the spectral distribution of photoconductivity at room temperature and liquid nitrogen temperature, the luminescence spectrum at liquid nitrogen temperature, and the thermally stimulated current curves of CdS crystals; determination of the effect of irradiation with 150 keV (maximum) X-rays on the spectral distribution of photoconductivity and thermally-stimulated current of CdS crystals; and studies of the effect of growth conditions on the photoconductive properties of CdS crystals.

Boeer, K. W.↗
NASA NTRS1973

Methods of measurement for semiconductor materials, process control, and devices

This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗
NASA NTRS1973

Heat treatment effects in Cu2S-CdS heterojunction photovoltaic cells

The optical and electronic properties of single crystal Cu2S-CdS photovoltaic cells were investigated. In these cells trapped charge near the interface which is manifested by a persistent increase in junction capacitance (the photocapacitance) plays a significant role in determining the carrier transport properties. It was found that the severe degradation in short-circuit current observed in heat-treated cells can be separated into two components: (1) a relatively small thermal component occurring on heat-treatment in the dark, and (2) a much larger degradation caused by exposure to light at room temperature. By a short additional heat-treatment above approximately 100 C the cell can be completely restored to its condition before the optically caused degradation with no effect on the depletion layer width.

Fahrenbruch, A. L.↗
NASA NTRS1976

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 Ohm-cm silicon solar cells

The observed low open-circuit voltage in 0.1 Ohm-cm solar cells is probably related to an excessively high diode saturation current. Theoretical studies conducted by Lindholm et al. (1975) and by Godlewski et al. (1975) have shown that a high saturation current could be produced by either high recombination rates or bandgap narrowing effects. A description is given of an investigation which shows that bandgap narrowing effects have a first order significance in determining the charge carrier transport controlling the open-circuit voltage of 0.1 Ohm-cm silicon solar cells.

Godlewski, M. P.↗
NASA NTRS1980

Use of an electrical resistance hygrometer to measure human sweat rates

The application of the resistance hygrometer as a tool to measure the localized sweat rate from the human body in both the active and passive sweat regions was studied. It was found that the physiological function of the skin membrane and fluid carrier transport phenomena from the outer skin have an indistinguishable effect on the observed findings from the instrument. The problems associated with the resistance hygrometer technique are identified and the usage of the instrument in the physiological experimentation from the engineering standpoint is evaluated.

Suga, T.↗