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Cathodoluminescence properties of components in enstatite chondrites

As a group, the enstatite chondrites are notable by the extremely low FeO content of most of their silicates. This property predisposes many of these materials to emit Cathodoluminescence (CL). Since examination of the CL properties of meteoritic components in ordinary and carbonaceous chondrites have proven to be a useful technique, we have initiated a survey of the enstatite chondrites in order to better characterize the chemical and physical properties of their luminescing phases. Because of the diversity encountered in this study, it is first necessary to describe the number and types of materials observed to emit CL in these meteorites. Two CL techniques were used. First, the initial survey work was conducted at low magnification using a Nuclide (now MAAS) Luminoscope mounted to a Wild MP binocular microscope equipped for photomicroscopy. The beam conditions used were 14 +/- KeV and 7 +/- 1 milliamps, with the beam focussed to the diameter of the field of view of the microscope at 20x (appox. 1.25 cm). Photomosaics were produced for each section using Ecktar 1000 film and an exposure time of 15 to 30 seconds. Second, high magnification (400x) photos were obtained of individual components of interest by mounting a 35mm camera to the optical system of the Cameca Camebax microprobe located at the Johnson Space Center. Beam conditions used were 15 KeV and 600 nA. Ecktar 1000 film was also used, but exposure times of 6 minutes were necessary to produce a useful image. The components in E chondrites that produce CL can be divided into four broad categories. These are clasts and aggregates, chondrules, matrix components, and refractory objects. Components in each category are discussed.

Dehart, John M.↗

Cathodoluminescence observations of in situ aqueous destruction of chondrules in the Murchison CM chondrite

A low-power cathodoluminescence (CL) mosaic of a 1x2 cm section of the Murchison CM chondrite contains chondrules of two types: one contains olivines with red CL and is thought to be the equivalent of group A chondrules of Sears et.; and one without observable CL, which is probably equivalent to their group B chondrules. Both types of chondrule contain dust mantles with a characteristic uniform red CL due to very fine-grained forsterites, but the mantles of group A chondrules have a complex internal structure and are much thicker than the relatively thin rims on the group B chondrules. The variety of internal textures and the progressive integration of the objects with the surrounding matrix suggests to us that these features are large group A chondrules in the process of being destroyed by aqueous alteration. Prior to aqueous alteration, group A chondrules in CM chondrites were larger than group B chondrules, which is contrary to the situation in ordinary chondrites and were apparently destroyed more rapidly than group B chondrules by aqueous alteration.

Sears, Derek W. G.↗

Two chondrule groups each with distinctive rims in Murchison recognized by cathodoluminescence

Two groups of chondrules in the Murchison CM chondrite, which have previously been identified on the basis of FeO in the chondrule grains, are readily identified from cathodoluminescence (CL) and belong to those of the ordinary chondrite group A and B chondrules of Sears et al. (1992a). All chondrules are surrounded by fine-grained rims containing forsterite with bright red CL, but on group A chondrules an outer thin rim grades into a much thicker rim, with a lower density of forsterite grains, which in turn grades into the central chondrule. Group B chondrules have only the thin outer rim with a high density of small forsterite grains. This is the first time an unequivocal correlation has been observed between chondrule rim thickness and the composition of the object on which the rim is located. We suggest that while all objects in the meteorite (group B chondrules, refractory inclusions, mineral and chondrule fragments, clasts) acquired a very thin rim during processing in a wet regolith, the thick rims on group A chondrules were formed by aqueous alteration of precursor metal- and sulfide-rich rims which are a characteristic of group A chondrules in ordinary chondrites.

Sears, Derek W. G.↗

Pyroxene structures, cathodoluminescence and the thermal history of the enstatite chondrites

In order to explore the thermal history of enstatite chondrites, we examined the cathodoluminescence (CL) and thermoluminescence (TL) properties of 15 EH chondrites and 21 EL chondrites, including all available petrographic types, both textural types 3-6 and mineralogical types alpha-delta. The CL properties of EL3(alpha) and EH3(alpha) chondrites are similar. Enstatite grains high in Mn and other transition metals display red CL, while enstatite with low concentrations of these elements show blue CL. A few enstatite grains with greater than 5 wt% FeO display no CL. In contrast, the luminescent properties of the metamorphosed EH chondrites are very different from those of metamorphosed EL chondrites. While the enstatites in metamorphosed EH chondrites display predominantly blue CL, the enstatites in metamorphosed EL chondrites display a distinctive magenta CL with blue and red peaks of approximately equal intensity in their spectra. The TL sensitivities of the enstatite chondrites correlate with the intensity of the blue CL and, unlike other meteorite classes, are not simply related to metamorphism. The different luminescent properties of metamorphosed EH and EL chondrites cannot readily be attributed to compositional differences. But x-ray diffraction data suggests that the enstatite in EH5(gamma),(delta) chondrites is predominantly disordered orthopyroxene, while enstatite in EL6(beta) chondrites is predominantly ordered orthopyroxene. The difference in thermal history of metamorphosed EL and EH chondrites is so marked that the use of single 'petrographic' types is misleading, and separate textural and mineralogical types are preferable. Our data confirm earlier suggestions that metamorphosed EH chondrites underwent relatively rapid cooling, and the metamorphosed EL chondrites cooled more slowly and experienced prolonged heating in the orthopyroxene field.

Zhang, Yanhong↗

Cathodoluminescent Source of Intense White Light

The device described exploits cathodoluminescence to generate intense light in the visible and near-infrared regions of the spectrum. In this device, the material to be excited to luminescence is a layer of quartz or alumina powder on an electrically conductive plate exposed to a low-pressure plasma discharge. The plate is electrically biased positively to collect electron current.

Foster, John E.↗

Low temperature annealing and cathodoluminescence studies of type 1 chondrule compositions

Preliminary results indicate that the yellow luminescing mesostases in type I chondrules can be altered by the effects of the low level thermal metamorphism. Although heat alone was insufficient to alter the CL, reheating for geologically relevant periods could have the same results as we obtained in a second series of experiments with water present. It is known that both water and solutions of sodium metasilicate greatly accelerate the devitrification of glasses. The results of the experiments that will be repeated should further clarify how the CL changes with increased thermal alteration.

Dehart, John M.↗

Electron Beam Induced Luminescence of SiO2 Optical Coatings

Optical coatings of disordered thin film SiO,/SiO, samples undergoing electron beam bombardment exhibited a cathodoluminescence effect. Measurements were made of the absolute illuminance and emission spectra as functions of incident electron energy (0.2 keV to 30 keV). flux (approx. 0.1 nA/sq cm to > 100 nA/sq cm) and power (<50 nW/sq cm to > 3mW/sq cm) for coatings (approx.60 nm to approx.200 nm thick) on reflective metal substrates over a range of sample temperatures (approx.40 K to approx.400 K) and emission wavelengths (approx.260 nm to approx.5000 nm). Illuminance reached a plateau saturation intensity I(sub sat) approx. 10(exp -4)W/sq cm. scaling as [I(sub mc)/(I + I(sub mc)/I(sub sat)] as incident power I(sub mc) approached I(sub sat). Well below I(sub sat), illuminance scaled linearly with incident power for lower-energy non-penetrating radiation that deposited all of its energy in the dielectric film. At higher incident energies (> 1-5 keV) electrons penetrate the dielectric, depositing only a fraction of their energy in the dielectric film, where deposited energy scales as the ratio of film thickness to penetration range. Since electron range exhibits a peak below approx. 1 keV, the illuminance decreased with increasing energy for penetrating radiation. The temperature dependence of the illuminance. in general, increased with decreasing temperature. Changes in apparent color with temperature were also observed. Four bands in the UV/VIS/NIR range from 300 nm to 1000 nm were observed in spectral measurements; no significant luminescence was detected in a range from approx. 1000 nm to approx. 5000 nm. These different bands either increased or decreased in intensity and shifted slightly in energy with decreasing temperature. Our measurements are explained in terms of simple disordered band theory models based on atomic-scale stochastic transport of electrons in highly disordered insulating materials. The theoretical models provide a fundamental basis for understanding the dependence of cathodoluminescence on irradiation time, incident flux and energy. and sample thickness and temperature. The observed luminescence occurs when an incident high energy electron excites a valence band electron into the conduction band. Following the excitation. a complex series of transitions take place between the extended conduction states and the long-lived localized trapped states (or chromophores) associated with structural or compositional defects in the dielectric materials. Thc transport equations and models of thc spatial and energy distribution of the trapped states below the mobility edge, their occupancy, and transitions provide microscopic scale insights into this macroscopic phenomenon. Our observations and theoretical models are also compared with similar previous room temperature studies of similar SiO2 films.

Dennison, J. R.↗

Diverse Electron-Induced Optical Emissions from Space Observatory Materials at Low Temperatures

Electron irradiation experiments have investigated the diverse electron-induced optical and electrical signatures observed in ground-based tests of various space observatory materials at low temperature. Three types of light emission were observed: (i); long-duration cathodoluminescence which persisted as long as the electron beam was on (ii) short-duration (<1 s) arcing, resulting from electrostatic discharge; and (iii) intermediate-duration (~100 s) glow-termed "flares". We discuss how the electron currents and arcing-as well as light emission absolute intensity and frequency-depend on electron beam energy, power, and flux and the temperature and thickness of different bulk (polyimides, epoxy resins, and silica glasses) and composite dielectric materials (disordered SiO2 thin films, carbon- and fiberglass-epoxy composites, and macroscopically-conductive carbon-loaded polyimides). We conclude that electron-induced optical emissions resulting from interactions between observatory materials and the space environment electron flux can, in specific circumstances, make significant contributions to the stray light background that could possibly adversely affect the performance of space-based observatories.

long-duration cathodoluminescence↗

Luminescence of powdered uranium glasses

Measurement of cathodoluminescence and photoluminescence efficiencies in powdered borosilicate glasses having different particle size and different uranium content. Excitation with 100 to 350 keV electrons and with 253.7 nm light was found to produce identical absolute radiant exitance spectra in powdered samples. The most efficient glass was one containing 29.4 wt% B2O3, 58.8 wt% SiO2, 9.8 wt% Na2O and 2.0 wt% UO2.

Eubanks, A. G.↗

Scanning electron microscopy of lunar regolith from the Sea of Fertility

Scanning electron microscopy was used in studying the morphology and cathodoluminescence of lunar regolith particles. Surface and structure of two groups of particles are differentiated: (1) Crystalline with well defined facets and spalling surfaces, which are grains of minerals and rock fragments: and (2) amorphous, fused, and partially or entirely glazed particles. Local melting of particles and the round openings on their surfaces are attributed to secondary influence on the regolith of factors of lunar weathering and above all micrometeoric impacts.

Antoshin, M. K.↗

Investigation of thin film solar cells based on Cu2S and ternary compounds such as CuInS2

Production and characterization in thin film form of Cu2S and related Cu compounds such as CuInS2 for photovoltaic cells are examined. The low cost process technology being reported, namely the sulfurization method, is capable of producing films on various substrates. Cathodoluminescence is being used as a diagnostic tool to identify Cu(x)S and CuInS2 compounds. Also, single crystals of CuInS2 are being prepared and it is contemplated that p-n junctions will be made in such crystals.

Loferski, J. J.↗

Characterization and growth of epitaxial layers of Gs exhibiting high resistivity for ionic implantation

Either classical or low temperature epitaxial growth techniques can be used to control the deposition of buffer layers of GaAs on semiconducting substrates and to obtain the resistivity and purity desired. Techniques developed to study, as a function of thickness, the evolution of mobilities by photoHall, and the spectroscopy of shallow and deep centers by cathodoluminescence and current transients reveal one very pure layer of medium resistivity and high mobility, and another "dead layer" of elevated resistivity far from the surface. The highly resistive layer remains pure over several microns, which appears interesting for implantation.

Source record↗

The preparation of BP single crystals by high pressure flux method

Single crystals of BP, a III-V compound semiconductor, were obtained by the high pressure flux method. Cu3P and Ni12P5 powders were used as the flux, and mixed with BP powder. Two kinds of mixtures were prepared: (1) 1.8g (BP) + 35 G (Cu3P) and (2) 1.7 g (BP) + 25 g (Ni12P5). They were compressed into pellets, heated at 1300 C for 24 h in an induction furnace under a pressure of 1 MPa using Ar-P2 gas, and slowly cooled to room temperature. In case (1), BP single crystals grew along the (III) plane, and in case (2) they grew as an aggregate of crystallites. The cathodoluminescence spectra of the synthetic BP crystals showed peaks near 680 nm (1.82 eV) for case (1), and 500 nm (2.47 eV) for case (2). By using the high pressure flux method conventional sized crystals were obtained in a relatively short time.

Kumashiro, Y.↗

Composition and origin of enstatite in E chondrites

A petrologic and electron-probe study of enstatite in six EH3, 4, and 5 chondrites, including the previously undescribed Allan Hills A77156, provides no support for Leitch and Smith's (1982) model in which crystals and liquids from two chemically distinct, partially molten planetesimals are mixed. It is found that Cr and Mn concentrations in enstatite grains in matrix and chondrules are not uniquely defined by their cathodoluminescence color. Wide variations in enstatite compositions among chondrules may partly reflect heterogeneities in the precursor material. However, correlated variations of Cr, Mn, and Fe concentrations in enstatite are probably largely due to fractionation during chondrule crystallization. The inverse correlation of petrologic type with minor element concentrations in enstatite appears to be a metamorphic effect.

Mckinley, S. G.↗

EBIC spectroscopy - A new approach to microscale characterization of deep levels in semi-insulating GaAs

The microscale characterization of electronic defects in (SI) GaAs has been a challenging issue in connection with materials problems encountered in GaAs IC technology. The main obstacle which limits the applicability of high resolution electron beam methods such as Electron Beam-Induced Current (EBIC) and cathodoluminescence (CL) is the low concentration of free carriers in semiinsulating (SI) GaAs. The present paper provides a new photo-EBIC characterization approach which combines the spectroscopic advantages of optical methods with the high spatial resolution and scanning capability of EBIC. A scanning electron microscope modified for electronic characterization studies is shown schematically. The instrument can operate in the standard SEM mode, in the EBIC modes (including photo-EBIC and thermally stimulated EBIC /TS-EBIC/), and in the cathodo-luminescence (CL) and scanning modes. Attention is given to the use of CL, Photo-EBIC, and TS-EBIC techniques.

Li, C.-J.↗