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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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22 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Germanium Telluride Chalcogenide Switches for RF Applications

This project developed prototype germanium telluride switches, which can be used in RF applications to improve SWAP (size, weight, and power) and signal quality in RF systems. These switches can allow for highly reconfigurable systems, including antennas, communications, optical systems, phased arrays, and synthetic aperture radar, which all have high impact on current National Security goals for improved communication systems and communication technology supremacy. The final result of the project was the demonstration of germanium telluride RF switches, which could act as critical elements necessary for a single chip RF communication system that will demonstrate low SWAP and high reconfigurability

42 ENGINEERING↗
DOE OSTI2023

Measurement of Dielectric Loss in Silicon Nitride at Centimeter and Millimeter Wavelengths

This work presents a suite of measurement techniques for characterizing the dielectric loss tangent across a wide frequency range from similar to 1 GHz to 150 GHz using the same test chip. In the first method, we fit data from a microwave resonator at different temperatures to a model that captures the two-level system (TLS) response to extract and characterize both the real and imaginary components of the dielectric loss. The inverse of the internal quality factor is a second measure of the overall loss of the resonator, where TLS loss through the dielectric material is typically the dominant source. The third technique is a differential optical measurement at 150 GHz. The same antenna feeds two microstrip lines with different lengths that terminate in two microwave kinetic inductance detectors (MKIDs). The difference in the detector response is used to estimate the loss per unit length of the microstrip line. Our results suggest a larger loss for SiNx at 150 GHz of tan delta similar to 4 x 10(-3) compared to 2.0 x 10(-3) and greater than or similar to 1 x 10(-3) measured at similar to 1 GHz using the other two methods. These measurement techniques can be applied to other dielectrics by adjusting the microstrip lengths to provide enough optical efficiency contrast and other mm/sub-mm frequency ranges by tuning the antenna and feedhorn accordingly.

Dielectrics loss↗
DOE OSTI2022

System-on-chip approach microwave imaging reflectometer on DIII-D tokamak

System-on-chip millimeter wave integrated circuit technology is used on the two-dimensional millimeter-wave imaging reflectometer (MIR) upgrade for density fluctuation imaging on the DIII-D tokamak fusion plasma. Customized CMOS chips have been successfully developed for the transmitter module and receiver module array, covering the 55–75 GHz working band. The transmitter module has the capability of simultaneously launching eight tunable probe frequencies (>0 dBm output power each). The receiver enclosure contains 12 receiver modules in two vertical lines. The quasi-optical local oscillator coupling of previous MIR systems has been replaced with an internal active frequency multiplier chain for improved local oscillator power delivery and flexible installation in a narrow space together with improved shielding against electromagnetic interference. The 55–75 GHz low noise amplifier, used between the receiver antenna and the first-stage mixer, significantly improves module sensitivity and suppresses electronics noise. The receiver module has a 20 dB gain improvement compared with the mini-lens approach and better than –75 dBm sensitivity, and its electronics noise temperature has been reduced from 55 000 K down to 11 200 K. Further, the V-band MIR system is developed for co-located multi-field investigation of MHD-scale fluctuations in the pedestal region with W-band electron cyclotron emission imaging on DIII-D tokamak.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

The Radical Atom: Mechanosynthetic 3D Printing of an Atomically Precise SPM Tip

This research effort sought to overcome current limitations in scanning probe-based atomic manipulation to enable atomically precise manufacturing (APM). Previous theoretical and experimental works on atom by atom and molecule by molecule fabrication of precise structures are limited to essentially to two-dimensions. APM will enable a paradigm shift in 21st century manufacturing practices in which every single atom in a electronic chip, device or machine can be placed in an exact and predefined position in three-dimensions. By providing a general method for generating reproducible SPM tip structure, this project will drive forward the entire field of atomically precise scanning probe microscopy, opening the door to positional control of nearly arbitrary covalent chemistry. Such control could, for example, be used in applications such as novel 2.5 or 3D microchip fabrication. The creation of a unique manufacturing method through APM has the potential to impact technologies at the theoretical limits of performance, weight, and utility including: solid-state quantum and spintronic computing systems, high efficiency optical antenna, solar power systems, defect engineered materials and extremely efficient catalysts. Although this experiment focused on pick-and-place non-scalable APM, the better understanding of the chemistry is crucial to the eventual goal of scalable APM. To place individual atoms into a specified location is a seminal aspiration of researchers and engineers in the many fields and may have early premium applications in medical devices and microelectronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗