SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
A main source of high carbon levels in silicon crystals grown from melt under reduced pressures and contained in silica crucibles supported by graphite retainer/susceptor was identified by thermodynamic analysis. The calculations were verified by experimental results and the carbon level is reduced by approximately 50% with the use of molybdenum retainers.
The purpose of experiment MA-060 was to investigate quantitatively the effects of near-zero gravity conditions on crystal growth and dopant segregation during directional solidification from the melt. Gallium-doped germanium single crystals were successfully grown from the melt with simultaneous interface demarcation during the Apollo Soyuz Test Project mission. The analysis of the experimental data indicates striking differences of dopant segregation and growth behavior in the presence and absence of gravity. The results obtained are believed to have far-reaching implications on materials processing under zero-gravity conditions and on the theory of crystal growth and segregation in general.
Polyethylene extended chain crystals melting process via electron microscopy and differential thermal analysis
The distribution coefficients of Zr and Nb have been found between armalcolite, ilmenite, clinopyroxene, rutile, plagioclase, and a coexisting high-Ti mare basalt melt in the 1105-1128 C temperature range. Henry's Law is not broken over the compositional range evaluated. The distribution coefficients of clinopyroxene are strongly dependent on melt and crystal compositions. The Al2O3 activity in the melt is a strong controlling parameter. It is concluded that: (1) Apollo 11 (low K) and Apollo 17 high-Ti mare basalts may have been generated by the partial melting of an ilmenite-rich cumulate, (2) Apollo 11 (high K) basalts may have been generated by a small amount of partial melting of a more fractionated ilmenite-rich cumulate, (3) KREEP magmas may have been formed as residual melts produced by fractional crystallization of the lunar magma ocean, and (4) anomalous (type II) MOR basalts may have been generated by small degrees of partial melting of a relatively undepleted mantle with clinopyroxene remaining in the residium.
A complete calculation that extends the classical theory for crystal nucleation in pure melts to binary alloys has been made. Using a regular solution model, approximate expressions have been developed for the free energy change upon crystallization as a function of solute concentration. They are used, together with model-based estimates of the interfacial tension, to calculate the nucleation frequency. The predictions of the theory for the maximum attainable undercooling are compared with existing experimental results for non-glass forming alloys. The theory is also applied to several easy glass-forming alloys (Pd-Si, Au-Si, Fe-B) for qualitative comparison with the present experimental experience on the ease of glass formation, and for assessment of the potential for formation of the glass in bulk.
The interaction of heat, mass, and momentum transport in the floating zone method for growing single crystals from the melt is examined. Methods for detailed numerical simulation of the transport phenomena in a floating zone are developed. Results of the calculations are combined with experiments to determine the effects of solidification induced, surface tension driven, and buoyancy driven convection in establishing dopant redistribution in the melt and the roles of heat transfer in crystal and melt and melt/solid interface shape in determining crystal quality. State of the art finite element techniques were developed for calculating the influence of natural convection in the melt on the shape of a melt/crystal interface and dopant segregation in the crystal. These techniques are demonstrated for solidification by the Bridgman technique. Numerical techniques are developed that calculate the shapes of both the melt/solid and melt/gas interfaces simultaneously with the thermal fields in melt and solid. Models for the fluid flows due to the rotation of the feed and crystal rods are completed and the effects of these flows on dopant segregation are studied, especially in the case of zones longer than can be achieved on Earth.
A thin platinum wire loop is an effective way to hold silicate melts during experimentation in a gas-mixing furnace. This method results in a minimum of physical and chemical interaction between the sample and container but maximum interaction between sample and gas mixture. However, volatilization of sodium occurs while the silicate is molten. By minimizing the chance of heterogeneous nucleation, the method is ideal for experimental investigation of the origin of rock textures.
Titanate phase relations at liquidus temperatures are determined for the CaAl2Si2O8-Fe2TiO4-FeTi2O5 system in contact with metallic iron by reflected- and transmitted-light microscopy, electron microprobe, and X-ray diffraction analyses. Results of critical equilibration runs are presented, various primary phase areas and liquidus isotherms are illustrated, and the geometry of the system is described. Three piercing points are determined, and it is noted that the compositional interrelations among coexisting crystalline and liquid phases as well as the sequence of the various titanate phases are indicative of the significant effects of the various cations on the relative stability of these phases. It is found that Al2O3 exerts a strong stabilizing effect on the phase assemblage of ulvospinel plus ferropseudobrookite relative to ilemite.
A susceptor for facilitating induction heating of silicon melt is described. The susceptor comprises a pair of susceptor halves of a thickness less than two skin depths, each being the mirror image of the other, disposed in mutually opposed, electrically insulated relation. The crucible comprises a quartz body supported by the graphite susceptor, whereby the R-F coil is electrically coupled with the melt.
A study of two clasts of coarse-grained anorthositic-noritic-troctolitic-suite norites from the fragment-laden melt rock 73255 is presented. Both clasts are igneous rocks crystallized from melts that were probably internally generated; clast 27,80 is a cumulate, and the parent magmas of both rocks probably crystallized below the lunar surface. Despite similar history, the parent rocks of the two clasts appear to be derived from distinct magma types: the 27,80 is characterized by plagioclase and orthopyroxene as the major constituents and by a high K, Nb, and Zr content, while the 27,45 type also contains augite and has a low content of K, Nb, and Zr.
Crystal growth experiments to explore influence of atmospheric compositions, during melting, on crystal stochiometry emphasizing determination of tantalum solubility
From heat-balance considerations at the growing interface and an assumption of predominantly radiative heat loss from the surface, an expression for the maximum growth rate of melt-grown ribbon-shaped crystals has been derived. For a given material and a large width-to-thickness ratio, the maximum growth rate varies as the square root of the ribbon thickness and is independent of its width. A comparison of the maximum cylindrical and ribbon growth rates is made for the silicon system. Some representative values at 7.5 cm diameter or width are 45 cm/h or 2000 cu cm per h for a cylindrical Czochralski-grown crystal and 625 cm/h or 95 cu cm per h for a 0.02-cm-thick ribbon.
Density, morphology and melting data on extended chain linear polyethylene and high molecular weight polymethylene crystallized from melt under high pressure
The non-contact positioning of materials in a space processing chamber is accomplished using a new type of acoustic levitator. Liquid and solid materials are positioned using a single source of sound. Fine control of position may be obtained by motion of an acoustical reflector. Electrical power required is usually less than 100 watts. The system operates satisfactorily at high and low temperatures and is adaptable as an add-on feature to existing space experiments. Containerless melting and solidification can be performed and a freely suspended liquid can be shaped to the contour of the sound field. Experiments are described in which aluminum, glass and plastic materials are melted and solidified in the containerless state. The system has applications to containerless crystal growth, melting and related processes.
The current work presents models for the evolution of europium and samarium abundances during lunar igneous processes. The effect of probable variations in lunar temperature and oxygen fugacity, mineral-liquid distribution coefficients, and the crystallization or melting progression are considered in the model calculations. Changes in the proportions of crystallizing phases strongly influence the evolution of trace element abundances during fractional crystallization, and models must include realistic estimates of the major phase equilibria during crystallization. The results are applied to evaluating the possibility of generating KREEP-rich materials by lunar igneous processes.
The noncontact positioning of materials in a space processing chamber is accomplished using a new type of acoustic levitator. Liquid and solid materials are positioned using a single source of sound. Fine control of position may be obtained by motion of an acoustical reflector. The electrical power required is usually less than 100 watts. The system operates satisfactorily at high and low temperatures and is adaptable as an 'add-on' feature to existing space experiments. Containerless melting and solidification can be performed and a freely suspended liquid can be shaped to the contour of the sound field. Experiments are described in which aluminum, glass and plastic materials are melted and solidified in the containerless state. The system has applications to containerless crystal growth, melting and related processes.
Sapphire and ruby were very difficult to press-forge because they deformed without cracking only in a limited temperature range before they melted. Spinel crystals were somewhat easier and MgO, CaO, and TiC crystals much easier to forge. The degree of recrystallization that occurred during forging (which was related to the ease and type of slip intersections) varied from essentially zero in Al2O3 to complete (i.e., random polycrystalline bodies were produced) in CaO. Forging of bi- and polycrystalline bodies produced incoherent bodies as a result of grain-boundary sliding. Strengths of the forged crystals were comparable to those of dense polycrystalline bodies of similar grain size. However, forged and recrystallized CaO crystals were ductile at lower temperatures than dense hot-pressed CaO. This behavior is attributed to reduced grain-boundary impurities and porosity. Fracture origins could be located, indicating that fracture in the CaO occurs internally as a result of surface work hardening caused by machining.-
The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness are outlined. To provide a modified CG2000 crystal power capable of pulling a minimum of five crystals, each of approximately 30 kg in weight, 150 mm diameter from a single crucible with periodic melt replenishment. Crystals to have: resistivity of 1 to 3 ohm cm, p-type; dislocation density below 1- to the 6th power per cm; orientation (100); after growth yield of greater than 90%. Growth throughput of greater than 2.5 kg per hour of machine operation using a radiation shield. Prototype equipment suitable for use as a production facility. The overall cost goal is $.70 per peak watt by 1986. To accomplish these goals, the modified CG2000 grower and development program includes: (1) increased automation with a microprocessor based control system; (2) sensors development which will increase the capability of the automatic controls system, and provide technology transfer of the developed systems.