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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Revealing the interplay between “intelligent behavior” and surface reconstruction of non-precious metal doped SrTiO 3 catalysts during methane combustion

The impact of surface reconstruction of a model perovskite, SrTiO 3 (STO), on CH 4 activation for combustion and oxidative coupling was previously revealed that the reaction rate was proportional to the creation of Srterminated step sites. Doped perovskites (SrTi 1-x M x O 3 , M=metal dopant) present yet another form of reconstruction throughout the surface and the bulk, where the metal dopant can migrate in and out of the perovskite lattice, also known as "intelligent behavior". In this work, understanding the interplay between perovskite surface reconstruction (surface termination) and the "intelligent behavior" is tackled for the first time, and the catalytic consequences are probed with CH 4 combustion as a model reaction. A set of experimental techniques, including XRD, Raman spectroscopy, X-ray adsorption spectroscopy, kinetic measurements, as well as DFT calculations were used to understand the catalytic behavior of the reconstructed surfaces of Ni and Cu-doped STO for methane combustion. Here, we found that during methane oxidation, the diffusion of Ni and Cu into the lattice due to the "intelligent behavior" is accompanied by Sr enrichment on the surface of the perovskite. This Srenrichment process is reversible when Cu or Ni species exsolute as clusters/nanoparticles upon H 2 treatment. Such a surface reconstruction is found to greatly impact the catalytic activity of doped perovskites towards methane combustion.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Cu- and Zn-doped alkali activated mortar – Properties and durability in (bio)chemically aggressive wastewater environments

Metakaolin-based alkali activated mortars (AAM) - with and without CuSO{sub 4}·5H{sub 2}O and ZnO addition (mass ratio M{sup n+}/solid binder 0.08% to 1.7%) - were casted and exposed within an extensive long-term field campaign over the period of 20 months to a sewer basin, strongly affected by biogenic acid corrosion. (Un-)exposed AAM were tested regarding their physicochemical and microstructural properties, bioreceptivity and overall durability. Metal addition led to a retarding effect during alkali-activation reaction, as well as to an increase in open porosity of up to 3.0% and corresponding lower compressive strength of up to 10.9%. Reduced microbial colonization and diversity were observed on AAM with Cu, while Zn addition led to increased biodiversity. We propose that the observed higher durability of Cu-doped AAM is due to antibacterial effects and associated reduction of biogenic acid production, superseding overall negative effects of metal-dosage on physical material properties. Observed lower durability of Zn-doped AAM was related to combined negative physicochemical and microbial effects.

36 MATERIALS SCIENCE↗

Nanometer-scale electrical potential imaging on absorber of CdSeTe solar cells

Here, we report on nm-scale electrical potential imaging throughout As-doped and Cu-doped CdSeTe absorbers using Kelvin probe force microscopy (KPFM). The potential imaging was conducted both laterally and vertically on beveled films using ion milling at small glancing angle. KPFM images electrical potential on the beveled surface and assesses defect charging in the subsurface region within a screening length from the beveled surface. We found that the grain boundaries were positively charged and that there were significant potential fluctuations in both grain boundary versus grain interior and intragrain. We further found that these potential fluctuations decreased significantly toward the front interface. Time of flight secondary ion mass spectrometry imaging shows that Se content increased toward the front interface, consistent with Se passivation of defects. The potential fluctuation was induced by defect charging, and the results elucidate different details of the defect configurations and grain structures of the films with different CdCl 2 treatment temperatures in the As-doped CdSeTe. The defect configurations in the region near the front interface can be a main factor contributing to the device performance difference. Our potential imaging provides insights about the defects throughout the absorber films, and shows that the potential fluctuation has a direct correlation to the V oc deficit.

14 SOLAR ENERGY↗

Enhancing Dihydrogen Interaction of a Zirconium Metal–Organic Framework by Metal Doping

Advancing efficient hydrogen storage technologies is essential for enabling a sustainable energy future, especially in onboard applications. While hydrogen offers high gravimetric energy density and zero-emission combustion, its low volumetric energy density presents significant storage challenges. Metal-organic frameworks (MOFs), well known for their tunable porosity and high surface areas, have emerged as promising candidates for adsorption-based hydrogen storage. This study investigated a chemically robust zirconium-based MOF, MOF-808, as a representative platform for hydrogen storage enhancement through metal ion doping. Various divalent metal ions were introduced into MOF-808 via one-pot synthesis or post-synthetic modification (PSM) to evaluate their effects on metal doping efficiency, framework stability, and hydrogen adsorption performance. Our findings demonstrate that metal doping enhanced the hydrogen binding affinity of MOF-808 while preserving its structural integrity and excellent stability. A Mg-doped MOF, MOF-808@Mg 2:1, showed a 59% increase in hydrogen uptake, and a Cu-doped MOF, MOF-808-ZrCu, exhibited a 33% increase in isosteric heat of adsorption for H 2 compared to the pristine MOF-808 activated at the same temperature. This work highlights the potential of metal-functionalized stable MOFs for practical hydrogen storage applications. Furthermore, these materials are also being studied for their potential to enhance CO 2 adsorption.

Adsorption↗

Microwave Heating of Nanocrystals for Rapid, Low-Aggregation Intermetallic Phase Transformations

The use of intermetallic Pt–Co nanocrystals (NCs) for the electrocatalytic oxygen reduction reaction is quickly gaining interest thanks to the higher electrochemical stability of the intermetallic L1 o phase compared to a random alloy A1 phase. However, the thermal treatment that enables the intermetallic phase transformation also causes considerable NC aggregation, resulting in a significant loss of electrochemically active surface area. Herein, we report the use of microwave radiation to induce the intermetallic phase transformation in Cu-doped Pt–Co NCs. We demonstrate that microwave radiation reduces NC aggregation while allowing for a complete phase transformation in only 30 s. Furthermore, these microwave-treated NCs demonstrate higher mass activity for the oxygen reduction reaction while maintaining electrochemical stability similar to the thermally annealed samples.

36 MATERIALS SCIENCE↗

Bioinspired Cu(II) Defect Sites in ZIF-8 for Selective Methane Oxidation

Activating the C–H bonds of alkanes without further oxidation to more thermodynamically stable products, CO and CO 2 , is a long-sought goal of catalytic chemistry. Here, inspired by the monocopper active site of methane monooxygenase, we synthesized a Cu-doped ZIF-8 metal–organic framework with 25% Cu and 75% Zn in the nodes and activated it by heating to 200 °C and dosing in a stepwise fashion with O 2 , methane, and steam. We found that it does oxidize methane to methanol and formaldehyde. The catalysis persists through at least five cycles, and beyond the third cycle, the selectivity improves to the extent that no CO 2 can be detected. Experimental characterization and analysis were carried out by PXRD, DRUV–vis, SEM, and XAS (XANES and EXAFS). The reaction is postulated to proceed at open-coordination copper sites generated by defects, and the mechanism of methanol production was explicated by density functional calculations with the revMO6-L exchange–correlation functional. The calculations reveal a catalytic cycle of oxygen-activated Cu I involving the conversion of two molecules of CH 4 to two molecules of CH 3 OH by a sequence of hydrogen atom transfer reactions and rebound steps. For most steps in the cycle, the reaction is more favored by singlet species than by triplets.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗

Inkjet-printed SnO x as an effective electron transport layer for planar perovskite solar cells and the effect of Cu doping

Inkjet printing is a more sustainable and scalable fabrication method than spin coating for producing perovskite solar cells (PSCs). Although spin-coated SnO 2 has been intensively studied as an effective electron transport layer (ETL) for PSCs, inkjet-printed SnO 2 ETLs have not been widely reported. Here, we fabricated inkjet-printed, solution-processed SnO x ETLs for planar PSCs. A champion efficiency of 17.55% was achieved for the cell using a low-temperature processed SnO x ETL. The low-temperature SnO x exhibited an amorphous structure and outperformed high-temperature crystalline SnO 2 . The improved performance was attributed to enhanced charge extraction and transport and suppressed charge recombination at ETL/perovskite interfaces, which originated from enhanced electrical and optical properties of SnO x , improved perovskite film quality, and well-matched energy level alignment between the SnO x ETL and the perovskite layer. Furthermore, SnO x was doped with Cu. Cu doping increased surface oxygen defects and upshifted energy levels of SnO x , leading to reduced device performance. A tunable hysteresis was observed for PSCs with Cu-doped SnO x ETLs, decreasing at first and turning into inverted hysteresis afterwards with increasing Cu doping level. This tunable hysteresis was related to the interplay between charge/ion accumulation and recombination at ETL/perovskite interfaces in the case of electron extraction barriers.

14 SOLAR ENERGY↗

Enhanced low-energy magnetic excitations evidencing the Cu-induced localization in the Fe-based superconductor Fe 0.98 Te 0.5 Se 0.5

Here, we have performed inelastic neutron scattering measurements on optimally doped Fe 0.98 Te 0.5 Se 0.5 and 10% Cu-doped Fe 0.88 Cu 0.1 Te 0.5 Se 0.5 to investigate the substitution effects on the spin excitations in the whole energy range up to 300 meV. It is found that substitution of Cu for Fe enhances the low-energy spin excitations (≤100 meV), especially around the (0.5, 0.5) point, and leaves the high-energy magnetic excitations intact. In contrast to the expectation that Cu with spin 1/2 will dilute the magnetic moments contributed by Fe with a larger spin, we find that the 10% Cu doping enlarges the effective fluctuating moment from 2.85 to 3.13 μB/Fe, although there is no long- or short-range magnetic order around (0.5, 0.5) and (0.5, 0). The presence of enhanced magnetic excitations in the 10% Cu doped sample which is in the insulating state indicates that the magnetic excitations must have some contributions from the local moments, reflecting the dual nature of the magnetism in iron-based superconductors. We attribute the substitution effects to the localization of the itinerant electrons induced by Cu dopants. Furthermore, these results indicate that the Cu doping does not act as electron donor as in a rigid-band shift model, but more as scattering centers that localize the system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Voltage Loss Comparison in CdSe/CdTe Solar Cells and Polycrystalline CdSeTe Heterostructures

Cd(Se)Te solar cells have considerable headroom to increase voltage. Voltage losses occur due to incomplete absorption above bandgap E_g and band tail absorption below E_g; such losses are quantified using radiative voltage. The largest voltage losses are attributed to nonradiative recombination, which is quantified via carrier lifetime and radiative efficiency. We compare radiative voltage, radiative efficiency, and carrier lifetime for Cu-doped CdSe/CdTe solar cells and for undoped polycrystalline CdSeTe heterostructures passivated with Al_2O_3. Using external quantum efficiency spectrum and a CdSeTe absorption spectrum obtained from absolute photoluminescence (PL), we show that the radiative voltage is greater than 1.1 V. Time-resolved PL experiments and modeling show that a major part of voltage losses can be attributed to recombination in the absorber bulk. The front interface recombination makes a larger impact within the first few nanoseconds after pulsed excitation, and the comparison of time-gated and time-integrated PL can be used to assess relative contributions of front interface and bulk recombination rates.

14 SOLAR ENERGY↗

SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices

SnO2 buffer layers of different thickness were deposited onto TEC 15 Fluorine doped tin oxide coated glass substrates using rf magnetron sputtering. The buffer layers were then incorporated into Cu-doped CdSeTe/CdTe devices using a range of CdCl 2 activation treatments and CuCl2 annealing temperatures to determine the effects of buffer layer thickness on device performance. Results show that all devices fabricated with thinner buffer layers resulted in much better J - V characteristics than their thicker counterparts. This was mainly due to a reduced open-circuit voltage (Voc) when using thicker buffer layers. The best device produced a conversion efficiency of 16.59%, fill factor of 71.62%, Jsc of 28.44 mA/cm 2 and Voc of 814.23 mV.

buffer layers↗

Persistent optical phenomena in oxide semiconductors

The interaction of transparent oxide semiconductors with light is critically important for a range of applications. Persistent effects could be exploited for holographic memory or optically defined circuits. Conversely, they may also be detrimental to device operation. Large, room-temperature persistent photoconductivity (PPC) was discovered in strontium titanate (SrTiO 3 , STO) after annealing in a hydrogen-containing atmosphere. Barium titanate (BaTiO 3 , BTO), a ferroelectric material, was recently found to also exhibit PPC. Room-temperature photodarkening was observed in Cu-doped gallium oxide (β-Ga 2 O 3 ) after exposure to sub-bandgap light. Hydrogen is believed to play a central role in these persistent phenomena. In the proposed model, a photon excites substitutional hydrogen (a proton inside an oxygen vacancy), making the defect unstable. The proton leaves and binds to a host oxygen atom, forming an O-H bond that is observed with infrared spectroscopy. Here, an oxygen vacancy is left behind. Because oxygen vacancies in STO and BTO are shallow donors, this process results in PPC. In β-Ga 2 O 3 :Cu, however, the oxygen vacancy neighbors a Cu acceptor. In that case, photoexcitation results in the rare Cu 3+ state, which absorbs visible light. The effect can be “erased” by annealing at 300-400°C.

Annealing↗

Path Integral Monte Carlo Simulations of Iron Plasmas (Final Technical Report)

This documents is the final technical report for our grant entitled "Path Integral Monte Carlo Simulations of Iron Plasmas" that focused on developing path integral Monte Carlo (PIMC) computer simulations. This techniques will be developed to study plasmas composed of heavier elements including iron and other third row elements. Equations of state (EOS) and transport properties will be derived in the regime of warm dense matter (WDM) and dense plasmas where existing first-principles methods cannot be applied. While standard density functional theory (DFT) has been used to accurately predict the structure of many solids and liquids up to temperatures on the order of 100,000 K, this method is not applicable at much higher temperature because the number of partially occupied electronic orbitals reaches intractably large numbers or the use of finite-temperature free energy functionals in orbital-free DFT introduces an uncontrolled approximation. Here we focus on PIMC methods that become more and more efficient with increasing temperatures and still include all electronic correlation effects. In this approach, electronic excitations increase the efficiency rather than reduce it. While it had commonly been assumed this method could only be applied to elements without core electrons, we showed that PIMC with free-particle nodes works well for first-row elements (PRL 108 (2012) 115502). Most recently, we extended the applicability range of all-electron PIMC to second-row elements by adopting localized nodal surfaces (PRL 115 (2015) 176403). To simulate third-row elements efficiently under WDM conditions, we propose a new method to remove core electrons by introducing pseudo-nodes. We explain our approach step by step and present preliminary results. We focus our method development on getting PIMC simulations of iron to work because of its fundamental importance for WDM and astrophysics. Then we move on to krypton and copper-doped beryllium, a ICF ablator material. We plan to continue working on key second-row material such as Na, Mg, MgO, Al, silica, and silicon-doped plastic ablators. Our collaborators at LLNL, will use our PIMC EOS data both as comparisons to existing semi-empirical, EOS-generating schemes, and as input for continuum radiation hydrodynamics simulations. We will establish an efficient pipeline from PIMC to macroscopic continuum studies of materials response. An emphasis will be placed on benchmarking such methods for plasmas of heavy elements at the very high temperatures (~100 eV) and low densities that are generated when Hohlraum radiation heats the ablator material in indirect drive laser experiments. Results from changes to the EOS will be of immeasurable importance to the designers at the National Ignition Facility (NIF) and at other facilities. Starting with our EOS of Cu-doped Be, our second collaborator at LLE, will perform real-time simulations of laser fusion experiments at the Omega laser and at the NIF to determine how sensitive the compression path depends on the ablator EOS. Since our collaborator also has experience in performing orbital-free DFT calculations, we propose to compare predictions from this method with PIMC results. In joint publications, we plan to analyze the accuracy of different free-energy functionals in order to understand why existing orbital-free DFT calculations do not predict compression peaks along the shock Hugoniot curve that we see with PIMC. The peaks are caused by the ionization of various electron shells. Their accurate characterization is important to compare with experimental results. We will break new ground by developing PIMC techniques that can simulate iron and all other third row elements in the plasma and WDM regimes. We introduce the concept of pseudo-nodes for the efficient treatment of the core-electrons. The EOS and transport properties will be derived and published online in the form of a new WDM database. Our PIMC EOS calculations will benchmark and possibly replace semi-analytical EOS tables like QEOS or SESAME, which will impact the hydrocode simulation community and will affect the design of NIF targets. Our PIMC results will help to improve the accuracy of orbital-free DFT simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

A New Low-Temperature Approach for Efficient and Low-Cost Group V Doping in CdTe Thin Film Solar Cells (Final Technical Report)

The goal of this project is to develop a highly efficient low-temperature ex-situ Group V diffusion doping approach in the CdCl 2 treated polycrystalline CdTe film using the group V chlorides (i.e., PCl 3 , AsCl 3 , SbCl 3 , and BiCl 3 ) as dopants source. For the first time, our innovative doping strategies through the low-temperature ex-situ Group V doping process in polycrystalline CdSeTe successfully demonstrated a promising power conversion efficiency of ~19% compared to the Cu-doped counterparts. Our newly developed low-temperature ex-situ group V doping allows dedicated control of group V diffusion amount, generates a desirable depth profile, and is completely compatible with commercial CdTe module manufacturing. We built the partnership with the largest CdTe solar module manufacturing in the US, e.g., First Solar, Inc to further develop these low-temperature diffusion doped CdSeTe solar cells. Our technology was granted US Patent No. US11257977B2. In this project, we systematically investigate and characterize the new ex-situ group V doping mechanisms, defect chemistry, microstructure, and device physics in CdTe solar cells by combining experimental and theoretical means to pave the way to achieve lower cost toward $\$$0.02/kWh and higher power conversion efficiency (PCE) toward 25% in polycrystalline CdTe solar technology. This project will benefit the public by providing more affordable solar electricity and provide an effective way to address climate change.

14 SOLAR ENERGY↗

Pb-Apatite Framework as a Generator of Novel Flat-Band CuO-Based Physics

Based upon density functional theory (DFT) calculations, we present the basic electronic structure of CuPb 9 (PO 4 ) 6 O (Cu-doped lead apatite, aka LK-99), in two scenarios: (1) where the structure is constrained to the P3 symmetry and (2) where no symmetry is imposed. At the DFT level, the former is predicted to be metallic while the latter is found to be a charge-transfer insulator. In both cases the filling of these states is nominally d 9 , consistent with the standard Cu 2+ valence state, and Cu with a local magnetic moment of order 0.7 μ B . In the metallic case we find these states to be unusually flat (∼0.2 eV dispersion), giving a very high density of electronic states (DOS) at the Fermi level that we argue can be a host for novel electronic physics. The flatness of the bands is the likely origin of symmetry-lowering gapping possibilities that would remove the spectral weight from E F . Motivated by some initial experimental observations of metallic or semiconducting behavior, we propose that disorder (likely structural) is responsible for closing the gap. Here, we consider a variety of possibilities that could possibly close the charge-transfer gap but limit consideration to kinds of disorder that preserve electron count. Of the possible kinds we considered (spin disorder, O populating vacancy sites, and Cu on less energetically favorable Pb sites), the local Cu moment, and consequently the charge-transfer gap, remains robust. We conclude that disorder responsible for metallic behavior entails some kind of doping where the electron count changes. Further, we claim that the emergence of the flat bands should be due to weak wave function overlap between the orbitals on Cu and O sites, owing to the directional character of the constituent orbitals. Therefore, finding an appropriate host structure for minimizing hybridization between Cu and O while allowing them to still weakly interact should be a promising route for generating flat bands at E F which can lead to interesting electronic phenomena, regardless of whether LK-99 is a superconductor.

36 MATERIALS SCIENCE↗

Direct Measurements of DT Fuel Preheat from Hot Electrons in Direct-Drive Inertial Confinement Fusion

Hot electrons generated by laser-plasma instabilities degrade the performance of laser-fusion implosions by preheating the DT fuel and reducing core compression. The hot-electron energy deposition in the DT fuel has been directly measured for the first time by comparing the hard x-ray signals between DT-layered and mass-equivalent ablator-only implosions. The electron energy deposition profile in the fuel is inferred through dedicated experiments using Cu-doped payloads of varying thickness. The measured preheat energy accurately explains the areal-density degradation observed in many OMEGA implosions. This technique can be used to assess the viability of the direct-drive approach to laser fusion with respect to the scaling of hot-electron preheat with laser energy.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Method of mitigating titanium impurities effects in p-type silicon material for solar cells

Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

Salama, A. M.↗