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DOE OSTI2025

Breakdown of the Static Dielectric Screening Approximation of Coulomb Interactions in Atomically Thin Semiconductors

Coulomb interactions in atomically thin materials are remarkably sensitive to variations in the dielectric screening of the environment, which can be used to control exotic quantum many-body phases and engineer exciton potential landscapes. For decades, static or frequency-independent approximations of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, have been sufficient. These approximations were first applied to quantum wells and were more recently extended with initial success to layered transition metal dichalcogenides (TMDs). Here, we use charge-tunable exciton resonances to investigate screening effects in TMD monolayers embedded in materials with low-frequency dielectric constants ranging from 4 to more than 1000, a range of 2 orders of magnitude larger than in previous studies. In contrast to the redshift predicted by static models, we observe a blueshift of the exciton resonance exceeding 30 meV in higher dielectric constant environments. We explain our observations by introducing a dynamical screening model based on a solution to the Bethe-Salpeter equation (BSE). When dynamical effects are strong, we find that the exciton binding energy remains mostly controlled by the low-frequency dielectric response, while the exciton self-energy is dominated by the high-frequency one. Our results supplant the understanding of screening in layered materials and their heterostructures, introduce a knob to tune selected many-body effects, and reshape the framework for detecting and controlling correlated quantum many-body states and designing optoelectronic and quantum devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1973

The electromagnetic radiation from simple sources in the presence of a homogeneous dielectric sphere

In this research, the effect of a homogeneous dielectric sphere on the electromagnetic radiation from simple sources is treated as a boundary value problem, and the solution is obtained by the technique of dyadic Green's functions. Exact representations of the electric fields in the various regions due to a source located inside, outside, or on the surface of a dielectric sphere are formulated. Particular attention is given to the effect of sphere size, source location, dielectric constant, and dielectric loss on the radiation patterns and directivity of small spheres (less than 5 wavelengths in diameter) using the Huygens' source excitation. The computed results are found to closely agree with those measured for waveguide-excited plexiglas spheres. Radiation patterns for an extended Huygens' source and for curved electric dipoles located on the sphere's surface are also presented. The resonance phenomenon associated with the dielectric sphere is studied in terms of the modal representation of the radiated fields. It is found that when the sphere is excited at certain frequencies, much of the energy is radiated into the sidelobes. The addition of a moderate amount of dielectric loss, however, quickly attenuates this resonance effect. A computer program which may be used to calculate the directivity and radiation pattern of a Huygens' source located inside or on the surface of a lossy dielectric sphere is listed.

Mason, V. B.↗

NASA NTRS1983

Plasma polymerized high energy density dielectric films for capacitors

High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

Yamagishi, F. G.↗

NASA NTRS1987

Microwave dielectric behavior of vegetation material

The microwave dielectric behavior of vegetation was examined through the development of theoretical models involving dielectric dispersion by both bound and free water and supported by extensive dielectric measurements conducted over a wide range of conditions. The experimental data were acquired using an open-ended coaxial probe that was developed for sensing the dielectric constant of thin layers of materials, such as leaves, from measurements of the complex reflection coefficient using a network analyzer. The probe system was successfully used to record the spectral variation of the dielectric constant over a wide frequency range extending from 0.5 to 20.4 GHz at numerous temperatures between -40 to +40 C. The vegetation samples were measured over a wide range of moisture conditions. To model the dielectric spectrum of the bound water component of the water included in vegetation, dielectric measurements were made for several sucrose-water solutions as analogs for the situation in vegetation. The results were used in conjunction with the experimental data for leaves to determine some of the constant coefficients in the theoretical models. Two models, both of which provide good fit to the data, are proposed.

Elrayes, Mohamed A.↗

NASA NTRS1990

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗

NASA NTRS1990

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X (0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗

NASA NTRS1992

Analysis of the dielectric properties of trunk wood in dominant conifer species from New England and Siberia

Data were collected for dominant conifer species. Dielectric properties of trunk wood were measured using a C-band dielectric probe. For certain specimens, electrical resistance was also measured using a shigometer. The water status of the trees studies was determined either by use of a Scholander pressure chamber on branch samples collected simultaneously with dielectric measurements or by fresh-weight/dry-weight assessment of wood core samples extracted and analyzed with the dielectric probe and shigometer. Diurnal delectric properties and xylem water column tension are inversely correlated such that real and imaginary dielectric values drop as tension increases. The dielectric properties were positively correlated with wood core moisture content while electrical resistance was poorly correlated with wood core moisture content in one species studied. Results support the view that dielectric properties are strongly correlated with moisture status in trunk wood, and possibly ion concentrations associated with decay processes in damaged specimens.

Ranson, K. J.↗

NASA NTRS1994

Thin-ribbon tapered coupler for dielectric waveguides

A recent discovery shows that a high-dielectric constant, low-loss, solid material can be made into a ribbon-like waveguide structure to yield an attenuation constant of less than 0.02 dB/m for single-mode guidance of millimeter/submillimeter waves. One of the crucial components that must be invented in order to guarantee the low-loss utilization of this dielectric-waveguide guiding system is the excitation coupler. The traditional tapered-to-a-point coupler for a dielectric rod waveguide fails when the dielectric constant of the dielectric waveguide is large. This article presents a new way to design a low-loss coupler for a high- or low-dielectric constant dielectric waveguide for millimeter or submillimeter waves.

Yeh, C.↗

NASA NTRS1995

Application of FEM to estimate complex permittivity of dielectric material at microwave frequency using waveguide measurements

A simple waveguide measurement technique is presented to determine the complex dielectric constant of a dielectric material. The dielectric sample is loaded in a shorted x-band rectangular waveguide. Using a network analyzer; the reflection coefficient of the shorted waveguide (loaded with sample) is measured. Using the Finite Element Method (FEM), the exact reflection coefficient of the shorted waveguide (loaded with sample) is determined as a function of the dielectric constant. Matching the measured value of the reflection coefficient with the reflection coefficient calculated using the FEM utilizing the Newton-Raphson Method, an estimate of the dielectric constant of a dielectric material is obtained. A comparison of estimated values of dielectric constant obtained from simple waveguide modal theory and the present approach is presented.

Deshpande, M. D.↗

NASA NTRS1996

A Numerical Simulation of Scattering from One-Dimensional Inhomogeneous Dielectric Random Surfaces

In this paper, an efficient numerical solution for the scattering problem of inhomogeneous dielectric rough surfaces is presented. The inhomogeneous dielectric random surface represents a bare soil surface and is considered to be comprised of a large number of randomly positioned dielectric humps of different sizes, shapes, and dielectric constants above an impedance surface. Clods with nonuniform moisture content and rocks are modeled by inhomogeneous dielectric humps and the underlying smooth wet soil surface is modeled by an impedance surface. In this technique, an efficient numerical solution for the constituent dielectric humps over an impedance surface is obtained using Green's function derived by the exact image theory in conjunction with the method of moments. The scattered field from a sample of the rough surface is obtained by summing the scattered fields from all the individual humps of the surface coherently ignoring the effect of multiple scattering between the humps. The statistical behavior of the scattering coefficient sigma(sup 0) is obtained from the calculation of scattered fields of many different realizations of the surface. Numerical results are presented for several different roughnesses and dielectric constants of the random surfaces. The numerical technique is verified by comparing the numerical solution with the solution based on the small perturbation method and the physical optics model for homogeneous rough surfaces. This technique can be used to study the behavior of scattering coefficient and phase difference statistics of rough soil surfaces for which no analytical solution exists.

Sarabandi, Kamal↗

NASA NTRS2006

Dielectric Heaters for Testing Spacecraft Nuclear Reactors

A document proposes the development of radio-frequency-(RF)-driven dielectric heaters for non-nuclear thermal testing of the cores of nuclear-fission reactors for spacecraft. Like the electrical-resistance heaters used heretofore for such testing, the dielectric heaters would be inserted in the reactors in place of nuclear fuel rods. A typical heater according to the proposal would consist of a rod of lossy dielectric material sized and shaped like a fuel rod and containing an electrically conductive rod along its center line. Exploiting the dielectric loss mechanism that is usually considered a nuisance in other applications, an RF signal, typically at a frequency .50 MHz and an amplitude between 2 and 5 kV, would be applied to the central conductor to heat the dielectric material. The main advantage of the proposal is that the wiring needed for the RF dielectric heating would be simpler and easier to fabricate than is the wiring needed for resistance heating. In some applications, it might be possible to eliminate all heater wiring and, instead, beam the RF heating power into the dielectric rods from external antennas.

Sims, William Herbert↗

NASA NTRS2013

Antenna with Dielectric Having Geometric Patterns

An antenna includes a ground plane, a dielectric disposed on the ground plane, and an electrically-conductive radiator disposed on the dielectric. The dielectric includes at least one layer of a first dielectric material and a second dielectric material that collectively define a dielectric geometric pattern, which may comprise a fractal geometry. The radiator defines a radiator geometric pattern, and the dielectric geometric pattern is geometrically identical, or substantially geometrically identical, to the radiator geometric pattern.

Dudley, Kenneth L.↗

DOE OSTI2024

AI-assisted discovery of high-temperature dielectrics for energy storage

Abstract Electrostatic capacitors play a crucial role as energy storage devices in modern electrical systems. Energy density, the figure of merit for electrostatic capacitors, is primarily determined by the choice of dielectric material. Most industry-grade polymer dielectrics are flexible polyolefins or rigid aromatics, possessing high energy density or high thermal stability, but not both. Here, we employ artificial intelligence (AI), established polymer chemistry, and molecular engineering to discover a suite of dielectrics in the polynorbornene and polyimide families. Many of the discovered dielectrics exhibit high thermal stability and high energy density over a broad temperature range. One such dielectric displays an energy density of 8.3 J cc −1 at 200 °C, a value 11 × that of any commercially available polymer dielectric at this temperature. We also evaluate pathways to further enhance the polynorbornene and polyimide families, enabling these capacitors to perform well in demanding applications (e.g., aerospace) while being environmentally sustainable. These findings expand the potential applications of electrostatic capacitors within the 85–200 °C temperature range, at which there is presently no good commercial solution. More broadly, this research demonstrates the impact of AI on chemical structure generation and property prediction, highlighting the potential for materials design advancement beyond electrostatic capacitors.

25 ENERGY STORAGE↗

DOE OSTI2024

High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant

As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young’s modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS 2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics

Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm -2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS 2 transistors exhibiting high on/off current ratios over 10 8 , ultralow subthreshold swing of 65 mV dec -1 and ultralow leakage current density of ~10 -6 A cm -2 . Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor–insulator transition at the clean-limit Bi 2 Sr 2 CaCu 2 O 8+δ can also be realized through fluoride gating. In conclusion, our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1974

Aperture excited dielectric antennas

The results of a comprehensive experimental and theoretical study of the effect of placing dielectric objects over the aperture of waveguide antennas are presented. Experimental measurements of the radiation patterns, gain, impedance, near-field amplitude, and pattern and impedance coupling between pairs of antennas are given for various Plexiglas shapes, including the sphere and the cube, excited by rectangular, circular, and square waveguide feed apertures. The waveguide excitation of a dielectric sphere is modeled using the Huygens' source, and expressions for the resulting electric fields, directivity, and efficiency are derived. Calculations using this model show good overall agreement with experimental patterns and directivity measurements. The waveguide under an infinite dielectric slab is used as an impedance model. Calculations using this model agree qualitatively with the measured impedance data. It is concluded that dielectric loaded antennas such as the waveguide excited sphere, cube, or sphere-cylinder can produce directivities in excess of that obtained by a uniformly illuminated aperture of the same cross section, particularly for dielectric objects with dimensions of 2 wavelengths or less. It is also shown that for certain configurations coupling between two antennas of this type is less than that for the same antennas without dielectric loading.

Crosswell, W. F.↗

NASA NTRS1974

Dielectric comparison of lunar and terrestrial fines at lunar conditions

The dielectric properties of lunar fines 74241,2 in the audio-frequency range under lunarlike conditions are presented. Results suggest that volatiles are released during storage and transport of the lunar sample. Apparently, subsequent adsorption of volatiles on the sample surface alters its dielectric response. The assumed volatile influence disappears after evacuation. A comparison of the dielectric properties of lunar and terrestrial materials as a function of density, temperature, and frequency indicates that if the terrestrial sample analyzed were completely devoid of atmospheric moisture, it would present dielectric losses smaller than those of the lunar sample. It is concluded that density prevails over temperature as the controlling factor of dielectric permittivity in the lunar regolith and that dielectric losses vary slowly with depth.

Alvarez, R.↗

NASA NTRS1978

An empirical model for the complex dielectric permittivity of soils as a function of water content

The recent measurements on the dielectric properties of soils shows that the variation of dielectric constant with moisture content depends on soil types. The observed dielectric constant increases only slowly with moisture content up to a transition point. Beyond the transition it increases rapidly with moisture content. The moisture value of transition region was found to be higher for high clay content soils than for sandy soils. Many mixing formulas were compared with, and were found incompatible with, the measured dielectric variations of soil-water mixtures. A simple empirical model was proposed to describe the dielectric behavior of ths soil-water mixtures. The relationship between transition moisture and wilting point provides a means of estimating soil dielectric properties on the basis of texture information.

Wang, J. R.↗