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NASA NTRS2003

X-Ray Diffraction and Imaging Study of Imperfections of Crystallized Lysozyme with Coherent X-Rays

Phase-sensitive x-ray diffraction imaging and high angular-resolution diffraction combined with phase contrast radiographic imaging are employed to characterize defects and perfection of a uniformly grown tetragonal lysozyme crystal in symmetric Laue case. The fill width at half-maximum (FWHM) of a 4 4 0 rocking curve measured from the original crystal is approximately 16.7 arcseconds, and defects, which include point defects, line defects, and microscopic domains, have been clearly observed in the diffraction images of the crystal. The observed line defects carry distinct dislocation features running approximately along the <110> growth front, and they have been found to originate mostly at a central growth area and occasionally at outer growth regions. Individual point defects trapped at a crystal nucleus are resolved in the images of high sensitivity to defects. Slow dehydration has led to the broadening of the 4 4 0 rocking curve by a factor of approximately 2.4. A significant change of the defect structure and configuration with drying has been revealed, which suggests the dehydration induced migration and evolution of dislocations and lattice rearrangements to reduce overall strain energy. The sufficient details of the observed defects shed light upon perfection, nucleation and growth, and properties of protein crystals.

Hu, Zheng-Wei↗

NASA NTRS2004

Diffraction and Imaging Study of Imperfections of Protein Crystals with Coherent X-rays

High angular-resolution x-ray diffraction and phase contrast x-ray imaging were combined to study defects and perfection of protein crystals. Imperfections including line defects, inclusions and other microdefects were observed in the diffraction images of a uniformly grown lysozyme crystal. The observed line defects carry distinct dislocation features running approximately along the <110> growth front and have been found to originate mostly in a central growth area and occasionally in outer growth regions. Slow dehydration led to the broadening of a fairly symmetric 4 4 0 rocking curve by a factor of approximately 2.6, which was primarily attributed to the dehydration-induced microscopic effects that are clearly shown in diffraction images. X-ray imaging and diffraction characterization of the quality of apoferritin crystals will also be discussed in the presentation.

Hu, Z. W.↗

NASA NTRS2004

Diffraction and imaging study of imperfections of crystallized lysozyme with coherent X-rays

Phase-contrast X-ray diffraction imaging and high-angular-resolution diffraction combined with phase-contrast radiographic imaging were employed to characterize defects and perfection of a uniformly grown tetragonal lysozyme crystal in the symmetric Laue case. The full-width at half-maximum (FWHM) of a 4 4 0 rocking curve measured from the original crystal was approximately 16.7 arcsec and imperfections including line defects, inclusions and other microdefects were observed in the diffraction images of the crystal. The observed line defects carry distinct dislocation features running approximately along the <1 1 0> growth front and have been found to originate mostly in a central growth area and occasionally in outer growth regions. Inclusions of impurities or formations of foreign particles in the central growth region are resolved in the images with high sensitivity to defects. Slow dehydration led to the broadening of a fairly symmetric 4 4 0 rocking curve by a factor of approximately 2.6, which was primarily attributed to the dehydration-induced microscopic effects that are clearly shown in X-ray diffraction images. The details of the observed defects and the significant change in the revealed microstructures with drying provide insight into the nature of imperfections, nucleation and growth, and the properties of protein crystals.

Muramidase/chemistry↗

NASA NTRS1978

Modified lattice-statics approach to dislocation calculations. II - Application

The atomic structure of a screw dislocation core of the 110 line type in aluminum is calculated by the modified lattice-statics method developed in the preceding paper. The method includes anharmonic as well as harmonic forces and permits relaxation of the atoms in all three dimensions. All forces used in the present calculations were derived from a first-principles interatomic pair potential obtained via pseudopotential theory. Several significant differences from the ordinary lattice statics results are noted, including the displacement field, Peierl's energy barrier, and the equilibrium core-center location.

Esterling, D. M.↗

NASA NTRS2004

Quantification Of 4H- To 3C-Polymorphism In Silicon Carbide (SiC) Epilayers And An Investigation Of Recombination-Enhanced Dislocation Motion In SiC By Optical Emission Microscopy (Oem) Techniques

Environments that impose operational constraints on conventional silicon-(Si) based semiconductor devices frequently appear in military- and space-grade applications. These constraints include high temperature, high power, and high radiation environments. Silicon carbide (SiC), an alternative type of semiconductor material, has received abundant research attention in the past few years, owing to its radiation-hardened properties as well as its capability to withstand high temperatures and power levels. However, the growth and manufacture of SiC devices is still comparatively immature, and there are severe limitations in present crystal growth and device fabrication processes. Among these limitations is a variety of crystal imperfections known as defects. These imperfections can be point defects (e.g., vacancies and interstitials), line defects (e.g., edge and screw dislocations), or planar defects (e.g., stacking faults and double-positioning boundaries). All of these defects have been experimentally shown to be detrimental to the performance of electron devices made from SiC. As such, it is imperative that these defects are significantly reduced in order for SiC devices to become a viable entity in the electronics world. The NASA Glenn High Temperature Integrated Electronics & Sensors Team (HTIES) is working to identify and eliminate these defects in SiC by implementing improved epitaxial crystal growth procedures. HTIES takes two-inch SiC wafers and etches patterns, producing thousands of mesas into each wafer. Crystal growth is then carried out on top of these mesas in an effort to produce films of improved quality-resulting in electron devices that demonstrate superior performance-as well as fabrication processes that are cost-effective, reliable, and reproducible. In this work, further steps are taken to automate HTIES' SiC wafer inspection system. National Instruments LabVIEW image processing and pattern recognition routines are developed that are capable of quantifying and mapping defects on both the substrate and mesa surfaces, and of quantifying polymorphic changes in the grown materials. In addition, an optical emission microscopy (OEM) system is developed that will facilitate comprehensive study of recombination-enhanced dislocation motion (REDM).

Speer, Kevin M.↗

NASA NTRS1981

The dissipation of inhomogeneous magnetic fields and the problem of coronae. I - Dislocation and flattening of flux tubes. II - The dynamics of dislocated flux

Attention is given to the dynamical dissipation arising in a magnetic field extending up through a tenuous atmosphere when an elemental flux tube in the field (1) is displaced from its equilibrium position and/or (2) is inflated by an internal fluid pressure different from the external fluid pressure. It is pointed out that as a consequence the tension in the lines of force of the ambient field flattens the dislocated tube so that the thickness of the tube decreases without limit and that the local field gradients increase rapidly with the passage of time until destroyed by one or more dissipative effects. The magnetic energy of a dislocated flux tube is therefore soon converted into thermal energy no matter how low the molecule resistivity of the fluid. Some formal illustrations of local conditions along a misaligned flux tube are presented, showing the simultaneous onset of diffusion, fluid motion, and hydromagnetic wave propagation. The examples demonstrate that the total effect is complicated and subject only to estimation, rather than formal calculation, at the present time.

Parker, E. N.↗

NASA NTRS1987

The characteristics of gamma-prime dislocation pairs in a nickel-base superalloy

The gamma-prime dislocation pairs of a single crystal nickel-base superalloy, PWA 1480, after tensile and fatigue loading at 650 C are analyzed. The existence and extent of cube cross slip in octahedral slip, and the nature of gamma-prime dislocation pairs in primary cube slip are investigated. It is observed that the PWA 1480 specimens oriented near (001) and (-3 6 10) line directions deform by octahedral slip and specimens oriented near (-1 1 1) and (-2 3 4) lines deform by primary cube slip. It is determined that the overall dislocation distributions are more homogeneous in low cycle fatigue (LCF) loading than in monotonic tensile loading; however, the gamma-prime dislocation pair characteristics are similar for tensile and LCF test specimens. The data reveal that the gamma-prime dislocation pairs of octahedral slip specimens are near-screw and on the cube cross slip plane and for the cube slip specimens, the dislocation pairs are of various characters and on the primary cube slip plane.

Gabb, T. P.↗

NASA NTRS1963

A DISCUSSION OF THE IMPORTANCE OF LINE TENSION ON COTTRELL'S THEORY OF THE SHARP YIELD POINT

Tension yield point of dislocation in atmosphere of impurity atoms

TENSION↗

NASA NTRS1972

The fine structure of slip lines in disordered Cu3Au.

The fine structure of the slip bands observed on the surface of a deformed Cu3Au single crystal is examined. The separation distance determined between the resolved individual slip lines is used to examine the calculations of other authors relating the passing stress of a dislocation past a dislocation pileup on a nearby parallel glide plane.

Salama, K.↗

NASA NTRS1987

TEM investigation of beta-SiC grown epitaxially on Si substrate by CVD

A transmission electron microscopy study is being conducted on the microstructure of beta-SiC films grown epitaxially on 001-plane silicon by chemical vapor deposition. Observations have been made in plain view and in cross-section. A high density of stacking faults has been found in the bulk of the epilayer which are bounded by partials of the Shockley type with Burgers vectors 1/6 211-line. Cross-sectional high resolution electron microscopy of the interface has shown it to be semicoherent with misfit dislocations to accommodate the lattice parameter difference between the substrate and the epilayer. In addition to misfit dislocations, a high density of twins and some stacking faults are present in the SiC near the interface. Mechanisms for the nucleation and growth of these defects are discussed.

Chorey, C. M.↗

NASA NTRS1992

Cathodoluminescence and transmission electron microscopy study of dark line defects in thick In(0.2)Ga(0.8)As/GaAs multiple quantum wells

TEM and cathodoluminescence (CL) imaging and spectroscopy have been performed on In(0.2)Ga(0.8)As/GaAs MQW structures. Cross-sectional and plan-view TEM demonstrates that misfit dislocations (MDs) are confined to the MQW-to-GaAs interfacial regions. The observed large variation in the exciton luminescence intensity is interpreted as due to the presence of nonradiative recombination centers spread homogeneously in the MQW region away from interface MDs. These nonradiative recombination centers compete with exciton and midgap radiative centers at wavelengths of 950 nm and 1000-1600 nm, respectively, resulting in spatiallty correlated dark line defects for all CL imaging wavelengths.

Rich, D. H.↗

NASA NTRS1986

Orientation and temperature dependence of some mechanical properties of the single-crystal nickel-base superalloy Rene N4. I - Tensile behavior

Single crystal specimens of a nickel-base superalloy with axes near 001, 011, and -112 were tested in tension at room temperature, 760, and 980 C. The alloy Rene N-4, was developed for gas turbine engine blades and has the nominal composition 3.7 Al, 4.2 Ti, 4 Ta, 0.5 Nb, 6 W, 1.5 Mo, 9 Cr, 7.5 Co, balance Ni, (all in weight percent). Analysis of slip band traces, specimen axis rotation, and dislocation Burgers vectors showed that at 760 and 980 C primary cube slip supplanted normal octahedral slip for the -112 line-oriented specimens. The other two orientations, which have lower resolved shear stresses on the cube system, exhibited octahedral slip at all three temperatures. The critical resolved shear stress is considerably greater on the cube system than on the octahedral system at room temperature. However, at 760 and 980 C the critical resolved shear stresses on the two systems are about the same. While the room temperature and 980 C yield strengths for the two orientations exhibiting octahedral slip could be rationalized on the basis of resolved shear stress, those at 760 C could not. Such violations of Schmid's law have previously been observed in other superalloys and single phase gamma-prime.

Miner, R. V.↗

NASA NTRS1984

The crack-inclusion interaction problem

The general plane elastostatic problem of interaction between a crack and an inclusion is considered. The Green's functions for a pair of dislocations and a pair of concentrated body forces are used to generate the crack and the inclusion. Integral equations are obtained for a line crack and an elastic line inclusion having an arbitrary relative orientation and size. The nature of stress singularity around the end points of rigid and elastic inclusions is described and three special cases of this intersection problem are studied. The problem is solved for an arbitrary uniform stress state away from the crack-inclusion region. The nonintersecting crack-inclusion problem is considered for various relative size, orientation, and stiffness parameters, and the stress intensity factors at the ends of the inclusion and the crack are calculated. For the crack-inclusion intersection case, special stress intensity factors are defined and are calculated for various values of the parameters defining the relative size and orientation of the crack and the inclusion and the stiffness of the inclusion.

Xue-Hui, L.↗

NASA NTRS1986

The crack-inclusion interaction problem

Liu, X.-H.↗

NASA NTRS1999

In-Situ Optical Determination of Thermomechanical Properties of ZnSe and ZnTe Crystals

At temperatures above 1/2 T(sub m), the generation and movement of dislocations may result due to the load created by the weight of the crystal itself The deformation may be expected to increase the line defect density and may result in generation of low angle grain boundaries, especially in the regions of the crystal attached to the ampule. It has often been suspected that elimination of this effect in space can improve crystallinity of crystals grown under microgravity conditions, however, a direct experimental proof of such relation is still missing. In this work we have designed and built a system of in-situ optical detection and measurement of the mechanical deformations of a crystal wafer under its own weight, and studied the deformation effects as a function of temperature. The results of the measurements for ZnSe and ZnTe crystal wafers will be presented.

Burger, A.↗

NASA NTRS1985

Stress and efficiency studies

Optical and electrical characterization of defects has been started in EFG ribbon grown in a system that will be used to test the stress model. Temperature and stress field modeling aimed at defining low stress growth configuration is also in progress, and results will be used to guide development of the experimental system. The baseline defect configuration for ribbon grown at speeds of approx. 1 cm/min consists of dislocation densities of the order of 10 to the 5th power to 10 to the 6th power/sq cm, as well as saucer type etch pits and line defects. All these defects are inhomogeneously distributed. EBIC measurements indicate that diffusion lengths are in the range 20 to 60 microns, and significant spatial inhomogeneities occur through the ribbon thickness. Growth speed changes in the range 0.7-1.0 cm/min do not produce significant variations in ribbon defect configurations.

Source record↗

NASA NTRS1989

The high temperature deformation in cyclic loading of a single crystal nickel-base superalloy

The high temperature cyclic stress softening response of the single crystal nickel-base superalloy PWA 1480 was investigated. Specimens oriented near the 001- and 111-lines were tested at 1050 C in low-cycle fatigue and then microstructurally evaluated. The 001- and 111-line specimens had dissimilar flow behavior in monotonic tensile tests, but comparable softening in low-cycle fatigue. This softening was accompanied by rapid generation of dislocation networks at the gamma-gamma-prime interfaces and by a slower time-dependent coarsening of gamma-prime precipitates. Due to the rapid formation of a dislocation substructure at the gamma-gamma-prime interfaces, the cyclic stress softening could be modeled with an existing theory which related cyclic stress to the evolving microstructure and dislocation structure.

Gabb, T. P.↗

NASA NTRS1991

Fracture of single crystals of the nickel-base superalloy PWA 1480E in helium at 22 C

The fracture behavior and deformation of He-charged (at 22 C) single crystals of PWA 1480E Ni-base superalloy were investigated using SEM and TEM techniques to observe the behavior of tensile fractures in notched single crystals with seven different crystal growth orientations: 100-line, 110-line, 111-line, 013-line, 112-line, 123-line, and 223-line. To identify the cleavage plane orientation, a stereoscopic technique, combined with the use of planar gamma-prime morphologies, was applied. It was found that gamma-prime particles were orderly and closely aligned with edges along the 100-line, 010-line, and 001-line-oriented directions of the gamma matrix. Different crystal growth orientations were found not to affect the morphology of gamma-prime particles. The accumulation of dislocations around gamma/gamma-prime interfaces formed strong barriers to subsequent dislocation movement and was the primary strengthening mechanism at room temperature.

Chen, P. S.↗