Ab initio modeling of the energy landscape for screw dislocations in body-centered cubic high-entropy alloys
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36 MATERIALS SCIENCE↗
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Interaction of extended dislocations with nanovoid clusters
Voids of nanoscale dimensions in irradiated metals can act as obstacles to dislocation motion and cause strengthening. In this work, nanovoid strengthening and the influences of void size, void spacing and material properties, such as stacking fault energies, on dislocation bypass mechanisms are investigated using Phase Field Dislocation Dynamics, a three-dimensional mesoscale model that predicts the minimum energy pathway taken by discrete dislocations. A broad range of face centered cubic metals (copper, nickel, silver, rhodium, and platinum) and nanovoid sizes and spacings are treated, altogether spanning void size–to–dislocation stacking fault width ratios from less than unity to ten. Material γ-surfaces, calculated from ab initio methods, are input directly into the formulation. The analysis reveals that the critical bypass stress scales linearly with the linear void fraction, effective isotropic shear modulus, and ratio of the intrinsic to unstable stacking fault energies. With only a few exceptions, the critical stress is controlled by the stress required for the leading partial to impinge the voids (to move within range of the attractive image stress field of the void). When the void diameter is nearly an order of magnitude greater than the stacking fault width, the mechanism determining critical strength shifts to the stress for the dislocation to breakaway after partially cutting the void. Furthermore, this situation corresponds to that treated by line tension models and is realized here for Pt, with a sub-nanometer stacking fault width.
36 MATERIALS SCIENCE↗
Phase field dislocation dynamics (PFDD) modeling of non-Schmid behavior in BCC metals informed by atomistic simulations
Body-Centered Cubic (BCC) metals exhibit anomalous mechanical properties such as twinning/anti-twinning and tension/compression asymmetry, which are attributed to asymmetric behavior of screw dislocations. Unlike Face-Centered Cubic (FCC) metals, the Critical Resolved Shear Stress (CRSS) of BCC metals deviates from the Schmid law. Here, we use a mesoscale modeling approach called Phase Field Dislocation Dynamics (PFDD) to understand the critical factors that control this non-Schmid behavior and reproduce atomistic predictions of the CRSS (Peierls stress). All inputs to the PFDD model are obtained from Molecular Statics (MS) simulations. Multiple pathways for modeling the non-Schmid behavior are investigated by incorporating the representative dislocation properties into different energy terms in the PFDD model. One way to understand non-Schmid behavior is to incorporate stress components projected on inclined planes into the external energy term within PFDD. Alternatively, we propose that non-Schmid behavior can also be accounted for by considering the variation of the {110} unstable stacking fault energy and the dislocation core width as a function of the applied tensorial stress field. The CRSS predicted using PFDD modeling is in excellent agreement with MS predictions.
36 MATERIALS SCIENCE↗
Chemical randomness, lattice distortion and the wide distributions in the atomic level properties in high entropy alloys
High entropy alloys (HEAs) consist of multiple elements present in large proportions that are randomly distributed on a crystal lattice. On the one hand, the presence of multiple elements engenders wide ranges of atomic radii, electronegativities, electron valences and magnetic moments, whereas on the other, the presence of chemical randomness creates unique nearest neighbor environments among the lattice sites. As a result, the symmetry of the energy landscape is broken essentially at each lattice site thereby resulting in highly distorted energy landscapes. At the atomistic level, the lattice distortion has been widely observed in the form of varying bond lengths. At the electronic level, a range of charge transfers result in the charge density distortion. Collectively, the distorted landscapes cause large quantitative variations of the atomic level properties; in this review, we highlight the effect of lattice distortion on point defect energetics, stacking fault energies, and dislocation mobility. Besides the well- known large HEAs phase space, the enormity of the distorted energy landscape that scales with the atomic configurations is a new consideration; understanding this coupling between composition, lattice distortion and properties’ variations thus becomes an exciting but challenging area within the field of HEAs. Furthermore, this coupling is expected to open a new door for materials design, where the materials properties could be tuned via leveraging the lattice distortion, which is essentially absent in dilute/ordered alloys.
36 MATERIALS SCIENCE↗
Transonic dislocation propagation in diamond
Here, the motion of line defects (dislocations) has been studied for more than 60 years, but the maximum speed at which they can move is unresolved. Recent models and atomistic simulations predict the existence of a limiting velocity of dislocation motion between the transonic and subsonic ranges at which the self-energy of dislocation diverges, though they do not deny the possibility of the transonic dislocations. We used femtosecond x-ray radiography to track ultrafast dislocation motion in shock-compressed single-crystal diamond. By visualizing stacking faults extending faster than the slowest sound wave speed of diamond, we show the evidence of partial dislocations at their leading edge moving transonically. Understanding the upper limit of dislocation mobility in crystals is essential to accurately model, predict, and control the mechanical properties of materials under extreme conditions.
36 MATERIALS SCIENCE↗
Phase Field Dislocation Dynamics (PFDD) version 2.x
This disclosure is for version 2.x of a mesoscale model called Phase Field Dislocation Dynamics (PFDD). PFDD is used for investigating deformation in nanoscale (grain sizes of ~300 nm and less) materials, such as metals and alloys. This approach models the motion and interaction of individual defects, namely dislocations, in the material using scalar-valued phase field variables, also called order parameters. The system is evolved through energy minimization thus the model calculates the total energy density in terms of the phase field variables. The energy minimization is completed using the Ginzburg-Landau equation, and is implemented with explicit time integration. The total system energy can be comprised of several terms, including the strain energy (which describes dislocation-dislocation interactions), the energy due to an applied stress (dislocation interactions with the applied stress), and a core/lattice (perfect dislocations) or generalized stacking fault (partial dislocations) energy (described the dislocation core structure). The latter term in particular may vary based on the crystal structure being modeled and is typically informed using lower length scale (e.g., atomistic) approaches, although no such (atomistic) calculations are completed within the PFDD algorithm. This basic formulation was previously reviewed by Los Alamos National Laboratory and released under license number C17113. This previously reviewed version we will henceforth refer to as PFDD v1.0. PFDD v1.0 consisted of 2 codes (one parallel and one serial) plus input files, all written in the C language. This new disclosure is addressing the next versions of the PFDD, versions 2.x. There have been several enhancements of PFDD v1.0, which are described here and included in the attached code, which we will refer to as PFDD v2.0. There are also several new features described here that are either planned or already in process and are expected to be subsequent releases, i.e., v2.1, v2.2, ...v2.x.
Hunter, Abigail↗
Effects of plasma hydrogenation on trapping properties of dislocations in heteroepitaxial InP/GaAs
In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approximately 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual dislocation related deep levels, before and after passivation. It is further shown that the 'apparent' activation energies of dislocation related deep levels, before and after passivation, reduce by approximately 70 meV as DLTS fill pulse times are increased from 1 microsecond to 1 millisecond. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.
Ringel, S. A.↗
Final-stage densification kinetics of direct current–sinteredZrB2
Final-stage sintering was analyzed for nominally phase pure zirconium diboride synthesized by borothermal reduction of high-purity ZrO2. Analysis was conducted on ZrB2 ceramics with relative densities greater than 90% using the Nabarro–Herring stress–directed vacancy diffusion model. Temperatures of 1900°C or above and an applied uniaxial pressure of 50 MPa were required to fully densify ZrB2 ceramics by direct current sintering. Ram travel data were collected and used to determine the relative density of the specimens during sintering. Specimens sintered between 1900 and 2100°C achieved relative densities greater than 97%, whereas specimens sintered below 1900°C failed to reach the final stage of sintering. The average grain size ranged from 1.0 to 14.7 μm. The activation energy was calculated from the slope of an Arrhenius plot that used the Kalish equation. The activation energy was 162 ± 34 kJ/mol, which is consistent with the activation energy for dislocation movement in ZrB2. The diffusion coefficients for dislocation motion that controls densification were 5.1 × 10−6 cm2/s at 1900°C and 5.1 × 10−5 cm2/s at 2100°C, as calculated from activation energy and average grain sizes. This study provides evidence that the dominant mechanism for final-stage sintering of ZrB2 ceramics is dislocation motion.
36 MATERIALS SCIENCE↗
Molecular models for creep in oriented polyethylene fibers
Highly oriented and crystalline polyetheylene (PE) fibers have a large failure stress under rapid tensile loading but exhibit significant creep at much smaller stresses that limits applications. A possible mechanism is slip of chains due to stress-enhanced, thermally activated nucleation of dislocations at chain ends in crystalline regions. Molecular dynamics simulations are used to parameterize a Frenkel–Kontorova model that provides analytic expressions for the limiting stress and activation energy for dislocation nucleation as a function of stress. Results from four commonly used hydrocarbon potentials are compared to show that the qualitative behavior is robust and estimate quantitative uncertainties. In all cases, the results can be described by an Eyring model with values of the zero-stress activation energy Ea0≈1.5 eV and activation volume V* ≈ 45 Å3 that are consistent with the experimental results for increasingly crystalline materials. The limiting yield stress is ∼8 GPa. These results suggest that activated dislocation nucleation at chain ends is an important mechanism for creep in highly oriented PE fibers.
O’Connor, Thomas C. (ORCID:0000000293930295)↗
Development of Mechanistic Fission Gas Release and Swelling Models for UN Fuels in BISON
This report describes the work in NEAMS (Nuclear Energy Advanced Modeling and Simulation) to develop a mechanistic fission gas model for uranium nitride fuels in BISON. The existing Sifgrs (Simple integrated fission gas release and swelling) model tracks the average properties of two bubble populations in the bulk and at the grain boundaries. It was recognized that dislocations play a crucial role in the fission gas swelling of UN, and an irradiation-induced dislocation density model was needed, as well as a model describing how fission gas interacts with dislocations creating a third population of bubbles along dislocations. A mechanistic model that tracks dislocation bubbles was implemented in Sifgrs. This model was used to simulate fission gas swelling and release in UN. Lower-length-scale calculations and experimental observations from carbide fuel were leveraged to help populate the model with essential parameters. As a placeholder, an empirical function was formulated for the evolution of the dislocation network. Because of the difference in evolution of this network at different temperatures, the dislocation bubbles are able to capture behavior that the bulk intragranular bubbles cannot. It was found that the bulk bubbles dominate microscopic swelling at low temperatures, and the dislocation bubbles dominate at higher temperatures. Based on this model, the transition between the two bubble types is the main factor behind the breakaway swelling phenomenon in UN. In order to test the model, a couple of assessments were run. For the lower temperature JOYO pins, the model produces reasonable fission gas release and swelling values. For the higher temperature SP1 pin, the model dramatically underestimates the fission gas release. This issue is attributed to the gas being trapped inside dislocation bubbles, unable to escape to grain boundaries to cause fission gas release, and could be remedied by a mechanistic dislocation model that allows the dislocation density to decrease at very high temperatures. A preliminary mechanistic dislocation model was developed supported by first-principle calculations. These calculations provided valuable insight into how interstitial defects cluster in UN in the {110} orientation, and may eventually form dislocation loops, leading to the conclusion that dislocation loops may nucleate from these clusters. An estimate of the dislocation line energy in UN was obtained and will be improved in future work. The free-energy cluster dynamics code Centipede was used to track interstitial and vacancy absorption at dislocation loops and calculate their growth. In addition, improvements to Centipede were made including new convergence criteria for transient simulations and sink driving force updates.
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
Effects of Plasma Hydrogenation on Trapping Properties of Dislocations in Heteroepitaxial InP/GaAs
In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approx. 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual deep levels after hydrogen passivation. It is further shown that the "apparent" activation energies of dislocation related deep levels, before and after passivation, reduce by approx. 70 meV as DLTS fill pulse times are increased from 1 usec. to 1 msec. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.
Ringel, S. A.↗
Effect of helium bubbles on the mobility of edge dislocations in copper
Abstract Helium bubbles can form in materials upon exposure to irradiation. It is well known that the presence of helium bubbles can cause changes in the mechanical behavior of materials. To improve the lifetime of nuclear components, it is important to understand deformation mechanisms in helium-containing materials. In this work, we investigate the interactions between edge dislocations and helium bubbles in copper using molecular dynamics (MD) simulations. We focus on the effect of helium bubble pressure (equivalently, the helium-to-vacancy ratio) on the obstacle strength of helium bubbles and their interaction with dislocations. Our simulations predict significant differences in the interaction mechanisms as a function of helium bubble pressure. Specifically, bubbles with high internal pressure are found to exhibit weaker obstacle strength as compared to low-pressure bubbles of the same size due to the formation of super-jogs in the dislocation. Activation energies and rate constants extracted from the MD data confirm this transition in mechanism and enable upscaling of these phenomena to higher length-scale models.
36 MATERIALS SCIENCE↗
The role of interfacial dislocation networks in high temperature creep of superalloys
The dislocation networks generated during high-temperature creep of several single-crystal nickel-based superalloys are analyzed. The networks continually evolve during creep at relatively low temperatures or eventually reach a more stable configuration at high temperatures. Specifically, the role of these networks in directional coarsening processes are studied, along with their formation kinetics, characteristics, and stability during creep. The results of this study combined with previous findings suggest that the directional coarsening process is strongly influenced by elastic strain energy. The dislocation networks formed during primary creep are found to be stable during all subsequent creep stages. Aspects of these dislocation networks are determined to be a product of both the applied creep stress and coherency strains.
Gabb, T. P.↗
Designing an Epitaxially-Integrated DBR for Dislocation Mitigation in Monolithic GaAsP/Si Tandem Solar Cells
This work explores epitaxially-integrated distributed Bragg reflectors (DBR) as a strategy to mitigate the impact of threading dislocations on the performance of monolithic GaAs 0.75 P 0.25 /Si tandem solar cells. The constraints present due to materials availability and the optical transmission profile of the GaAs 0.75 P 0.25 top cell require the use of an enhanced bandwidth DBR design achieved by combining two narrow-band DBR’s with different central wavelengths. Here, the impact of this DBR structure on JSC, along with the competing effects of threading dislocation density (TDD), are investigated using a robust, experimentally informed analytical model. Implementing this DBR within the GaAs 0.75 P 0.25 /Si tandem cell structure is predicted to yield a short circuit current enhancement equivalent to an ~1.8× reduction in TDD, providing a clear demonstration of its promise as a design methodology for mitigating the impact of non-negligible defect populations.
14 SOLAR ENERGY↗
Impact of the plastic deformation microstructure in metals on the kinetics of recrystallization: A phase-field study
The sensitivity of recrystallization kinetics in metals to the heterogeneity of microstructure and deformation history is a widely accepted experimental fact. However, most of the available recrystallization models employ either a mean field approach or use grain-averaged parameters, and thus neglecting the mesoscopic heterogeneity induced by prior deformation. Here in the present study, we investigate the impact of deformation-induced dislocation (subgrain) structure on the kinetics of recrystallization in metals using the phase-field approach. The primary focus here is upon the role of dislocation cell boundaries. The free energy formulation of the phase-field model accounts for the heterogeneity of the microstructure by assigning localized energy to the resulting dislocation microstructure realizations generated from experimental data. These microstructure realizations are created using the universal scaling laws for the spacing and the misorientation angles of both the geometrically necessary and incidental dislocation boundaries. The resulting free energy is used into an Allen-Cahn based model of recrystallization kinetics, which are solved using the finite element method. The solutions thus obtained shed light on the critical role of the spatial heterogeneity of deformation in the non-smooth growth of recrystallization nuclei and on the final grain structure. The results showed that, in agreement with experiment, the morphology of recrystallization front exhibits protrusions and retrusions. By resolving the subgrain structure, the presented algorithm paves the way for developing predictive kinetic models that fully account for the deformed state of recrystallizing metals.
36 MATERIALS SCIENCE↗
Phase field modeling of discontinuous dynamic recrystallization in hot deformation of magnesium alloys
We have developed a quantitative phase field model of discontinuous dynamic recrystallization (PF-DDRX) for investigating grain structure evolution and its impact on mechanical response in magnesium alloy during hot deformation. A set of isothermal compression tests were conducted by Gleeble thermo-mechanical simulator and used to determine PF-DDRX model parameters such as critical stresses of recrystallization, activation energies of dislocation, grain boundaries and recrystallization grain nucleation. In the simulations, the experimentally measured average grain size and distribution were used to generate initial microstructures. The results show that the typical ‘necklace’ microstructures observed in DDRX forms at the earlier stage of recrystallization. The inhomogeneity of microstructures first increases rapidly and then decreases gradually and reaches a constant with the increase of dynamic recrystallization volume fraction. Both predicted grain structure and mechanical response are in good agreement with experimental results. This demonstrates that the model parameters determined by experimental data are reliable for the developed PF-DDRX model to predict the grain structure evolution and flow behavior of AZ80 magnesium alloy under hot deformation. This work presents a path to combine experiments and modeling to give quantitative prediction and minimize experimental cost.
magnesium alloy, Phase field method, dynamic recry↗
The friction stress acting upon moving dislocation as derived from current microstrain studies.
Friction stress acting upon moving dislocation derived by microstrain methods is meaningful under limited conditions
STRESS-STRAIN DISTRIBUTION↗
An exactly solvable model for calculating critical misfit and thickness in epitaxial superlattices - Layers of equal elastic constants and thicknesses
A parabolic interaction potential has been used to develop a model for calculating the misfit dislocation (MD) energy in the case of a superlattice of alternating layers of materials with equal elastic constants and thicknesses. The model, which is believed to be a good one for small misfits and to have some merit for covalent bonded materials, is exactly solvable for the critical thickness above which it is energetically favorable to lose coherency by the introduction of MDs into the interfaces. It was found, for a given misfit f, that the critical thickness for epitaxial superlattices free from their substrate is somewhat more than four times that for a single epilayer on a thick substrate. Furthermore, the critical thickness varies almost inversely with misfit to the power 1.22 when Poisson's ratio is 1/3. It was also shown that the critical misfit f(c) obtained by equating maximal misfit strain and MD energies is a significant overestimate of f(c). The results for a superlattice are compared with those of a thin layer on a thick substrate.
Van Der Merwe, Jan H.↗