Giant negative electrostriction and dielectric tunability in a van derWaals layered ferroelectric
Abstract not provided
Neumayer, Sabine M.↗
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Development of graphene nanoplatelet embedded polymer microcantilever for vapour phase explosive detection applications
In this work, a graphene based strain sensor has been reported for explosive vapour detection applications by exploiting the piezoresistive property of graphene. Instead of silicon based cantilevers, a low cost polymeric micro-cantilever platform has been used to fabricate this strain sensor by embedding the graphene nanoplatelet layer inside the beam. The fabricated devices were characterized for their mechanical and electromechanical behaviour. This device shows a very high gauge factor which is around ~144. Also the resonant frequency of these cantilevers is high enough such that the measurements are not affected by environmental noise. These devices have been used in this work for reliable detection of explosive vapours such as 2,4,6-Trinitrotoluene down to parts-per-billion concentrations in ambient conditions.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Taguchi Design of Experiment Enabling the Reduction of Spikes on the Sides of Patterned Thin Films for Tunnel Junction Fabrication
Photolithographically patterned thin films often possess unwanted spikes along the side edges. These spikes are a significant issue for the development of spinvalve memory, tunnel junction based molecular devices, and micro-electromechanical systems. Here, we report a very simple, economical, and fast way of creating an optimum photoresist profile for the production of spike-free patterned films. This approach is based on performing a soaking step in the positive-photoresist’s developer solution before the UV exposure. However, the success of this method depends on multiple photolithography factors: photoresist thickness (governed by spin speed), soft baking temperature, soaking time in developer, and exposure time. In this paper, we report our systematic experiments to study the effect of these factors by following the L9 experimental scheme of the Taguchi Design of experiment (TDOE) approach. The L9 experiment scheme effectively accommodated the study of four photolithography factors, each with three levels. After performing photolithography as per L9 TDOE scheme, we sputter deposited 20 nm Tantalum to check the side edge profile of the patterned film by atomic force microscope (AFM). We measured the heights of the spikes along the thin film edges. We utilized spike height as the desired property and chose “smaller the better” criteria for the TDOE analysis. TDOE enabled us to understand the relative importance of the parameters, relationship among the parameters, and impact of the various levels of the parameters on the thin film edge profile. TDOE analysis yielded an optimum combination of levels for the four photolithography factors. The optimum combination of photolithography factors included spin speed 4000 rpm, 100 °C soft baking temperature, 60 sec pre-soaking in the developer solution, and 15 sec UV exposure. We validated the TDOE by AFM and observed spike free patterned films. Here, we also made complete tunnel junction devices by utilizing the optimized photolithography factors for the bottom electrode and obtained excellent tunneling behavior. In summary, this study provides a very simple, economical, and fast photolithography approach for creating optimum photoresist profile for the micro-nano scale devices and electromechanical structures.
36 MATERIALS SCIENCE↗
Graphene engineering by neon ion beams
Achieving the ultimate limits of materials and device performance necessitates the engineering of matter with atomic, molecular, and mesoscale fidelity. While common for organic and macromolecular chemistry, these capabilities are virtually absent for 2D materials. In contrast to the undesired effect of ion implantation from focused ion beam (FIB) lithography with gallium ions, and proximity effects in standard e-beam lithography techniques, the shorter mean free path and interaction volumes of helium and neon ions offer a new route for clean, resist free nanofabrication. Furthermore, with the advent of scanning helium ion microscopy, maskless He + and Ne + beam lithography of graphene based nanoelectronics is coming to the forefront. Here, we will discuss the use of energetic Ne ions in engineering graphene devices and explore the mechanical, electromechanical and chemical properties of the ion-milled devices using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we demonstrate that the mechanical, electrical and optical properties of the exact same devices can be quantitatively extracted. Additionally, the effect of defects inherent in ion beam direct-write lithography, on the overall performance of the fabricated devices is elucidated.
36 MATERIALS SCIENCE↗
All‐Liquid Reconfigurable Electronics Using Jammed MXene Interfaces
Abstract Rigid, solid‐state components represent the current paradigm for electronic systems, but they lack post‐production reconfigurability and pose ever‐increasing challenges to efficient end‐of‐life recycling. Liquid electronics may overcome these limitations by offering flexible in‐the‐field redesign and separation at end‐of‐life via simple liquid phase chemistries. Up to now, preliminary work on liquid electronics has focused on liquid metal components, but these devices still require an encapsulating polymer and typically use alloys of rare elements like indium. Here, using the self‐assembly of jammed 2D titanium carbide (Ti 3 C 2 T x ) MXene nanoparticles at liquid–liquid interfaces, “all‐liquid” electrically conductive sheets, wires, and simple functional devices are described including electromechanical switches and photodetectors. These assemblies combine the high conductivity of MXene nanosheets with the controllable form and reconfigurability of structured liquids. Such configurations can have applications not only in electronics, but also in catalysis and microfluidics, especially in systems where the product and substrate have affinity for solvents of differing polarity.
36 MATERIALS SCIENCE↗
Acousto-optic modulation of a photonic crystal nanocavity with Lamb waves in microwave K band
Integrating nanoscale electromechanical transducers and nanophotonic devices potentially can enable acousto-optic devices to reach unprecedented high frequencies and modulation efficiency. Here, we demonstrate acousto-optic modulation of a photonic crystal nanocavity using Lamb waves with frequency up to 19 GHz, reaching the microwave K band. The devices are fabricated in suspended aluminum nitride membrane. Excitation of acoustic waves is achieved with interdigital transducers with period as small as 300 nm. Confining both acoustic wave and optical wave within the thickness of the membrane leads to improved acousto-optic modulation efficiency in these devices than that obtained in previous surface acoustic wave devices. Our system demonstrates a scalable optomechanical platform where strong acousto-optic coupling between cavity-confined photons and high frequency traveling phonons can be explored.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Elastic properties of suspended multilayer WSe{sub 2}
We report the experimental determination of the elastic properties of suspended multilayer WSe{sub 2}, a promising two-dimensional (2D) semiconducting material combined with high optical quality. The suspended WSe{sub 2} membranes have been fabricated by mechanical exfoliation of bulk WSe{sub 2} and transfer of the exfoliated multilayer WSe{sub 2} flakes onto SiO{sub 2}/Si substrates pre-patterned with hole arrays. Then, indentation experiments have been performed on these membranes with an atomic force microscope. The results show that the 2D elastic modulus of the multilayer WSe{sub 2} membranes increases linearly while the prestress decreases linearly as the number of layers increases. The interlayer interaction in WSe{sub 2} has been observed to be strong enough to prevent the interlayer sliding during the indentation experiments. The Young's modulus of multilayer WSe{sub 2} (167.3 ± 6.7 GPa) is statistically independent of the thickness of the membranes, whose value is about two thirds of other most investigated 2D semiconducting transition metal dichalcogenides, namely, MoS{sub 2} and WS{sub 2}. Moreover, the multilayer WSe{sub 2} can endure ∼12.4 GPa stress and ∼7.3% strain without fracture or mechanical degradation. The 2D WSe{sub 2} can be an attractive semiconducting material for application in flexible optoelectronic devices and nano-electromechanical systems.
36 MATERIALS SCIENCE↗
Edge treatment for spurious mode suppression in thin-film lithium niobate resonators
Abstract Thin-film lithium niobate is an attractive material for RF acoustic devices because of its high electromechanical coupling. However, due to the large coupling and the high anisotropy, thin-film lithium niobate resonators are prone to accidental resonances called spurious modes. These modes compromise the frequency response of the resonators, limiting their use in filter and oscillator applications. In this work, we present a novel method of spurious mode suppression through a special edge treatment etch process. Two thin-film lithium niobate resonators were fabricated, one with smooth sidewalls and one with the edge treatment. It was found that the edge-treated resonators show a weaker spurious mode response. This is potentially a new way to mitigate spurious resonances, a major issue in lithium niobate Lamb wave devices.
36 MATERIALS SCIENCE↗
Reconstructing the membrane detection of a 1D electrostatic-driven MEMS device by the shooting method: convergence analysis and ghost solutions identification
In this paper, in the domain of 1D-membrane micro-electro-mechanical systems in which the electrostatic field is expressed in terms of geometric curvature of the membrane, we present a numerical approach based on shooting techniques to reconstruct the membrane profile in the device in steady-state case. In particular, starting from known results in literature about existence achieved by Schauder–Tychonoff’s fixed point approach and uniqueness, and focusing on two physical–mathematical parameters appropriately indicative of the applied voltage and electromechanical properties of the membrane, respectively, we will discuss what operation parameters (applied voltage, amplitude of electrostatic field) and for which electromechanical membrane characteristic of the device is permitted or not a convergence of the method with respect to analytical results. Finally, we will discuss in detail the detected ghost solutions.
97 MATHEMATICS AND COMPUTING↗
Ultraviolet (UV) light emitting device (LED) driven photocathode
An apparatus includes an electromechanical x-ray generator (MEXRAY) configured to charged capacitors using a small, high-voltage direct current. The apparatus also includes an ultraviolet (UV) light emitting diode (LED) driven photocathode device configured to control/modulate an electron dose rate of the MEXRAY or other vacuum DC, source.
Watson, Scott Avery↗
Vertical and Lateral Etch Survey of Ferroelectric AlN/Al 1-x Sc x N in Aqueous KOH Solutions
Due to their favorable electromechanical properties, such as high sound velocity, low dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al 1-x Sc x N) thin films have achieved widespread application in radio frequency (RF) acoustic devices. The resistance to etching at high scandium alloying, however, has inhibited the realization of devices able to exploit the highest electromechanical coupling coefficients. In this work, we investigated the vertical and lateral etch rates of sputtered AlN and Al 1-x Sc x N with Sc concentration x ranging from 0 to 0.42 in aqueous potassium hydroxide (KOH). Etch rates and the sidewall angles were reported at different temperatures and KOH concentrations. We found that the trends of the etch rate were unanimous: while the vertical etch rate decreases with increasing Sc alloying, the lateral etch rate exhibits a V-shaped transition with a minimum etch rate at x = 0.125. By performing an etch on an 800 nm thick Al 0.875 Sc 0.125 N film with 10 wt% KOH at 65 °C for 20 min, a vertical sidewall was formed by exploiting the ratio of the {$10\overline{11}$ planes and {$1\overline{1}00$ planes etch rates. This method does not require preliminary processing and is potentially beneficial for the fabrication of lamb wave resonators (LWRs) or other microelectromechanical systems (MEMS) structures, laser mirrors and Ultraviolet Light-Emitting Diodes (UV-LEDs). It was demonstrated that the sidewall angle tracks the trajectory that follows the {$\overline{1}2\overline{12}$ of the hexagonal crystal structure when different c/a ratios were considered for elevated Sc alloying levels, which may be used as a convenient tool for structure/composition analysis.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Shuttle-promoted nano-mechanical current switch
We investigate electron shuttling in three-terminal nanoelectromechanical device built on a movable metallic rod oscillating between two drains. The device shows a double-well shaped electromechanical potential tunable by a source-drain bias voltage. Four stationary regimes controllable by the bias are found for this device: (i) single stable fixed point, (ii) two stable fixed points, (iii) two limit cycles, and (iv) single limit cycle. In the presence of perpendicular magnetic field, the Lorentz force makes possible switching from one electromechanical state to another. The mechanism of tunable transitions between various stable regimes based on the interplay between voltage controlled electromechanical instability and magnetically controlled switching is suggested. The switching phenomenon is implemented for achieving both a reliable active current switch and sensoring of small variations of magnetic field.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Large scale electromechanical transistor with application in mass sensing
Nanomechanical transistor (NMT) has evolved from the single electron transistor, a device that operates by shuttling electrons with a self-excited central conductor. The unfavoured aspects of the NMT are the complexity of the fabrication process and its signal processing unit, which could potentially be overcome by designing much larger devices. This paper reports a new design of large scale electromechanical transistor (LSEMT), still taking advantage of the principle of shuttling electrons. However, because of the large size, nonlinear electrostatic forces induced by the transistor itself are not sufficient to drive the mechanical member into vibration—an external force has to be used. In this paper, a LSEMT device is modelled, and its new application in mass sensing is postulated using two coupled mechanical cantilevers, with one of them being embedded in the transistor. The sensor is capable of detecting added mass using the eigenstate shifts method by reading the change of electrical current from the transistor, which has much higher sensitivity than conventional eigenfrequency shift approach used in classical cantilever based mass sensors. Numerical simulations are conducted to investigate the performance of the mass sensor.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
U.S. Eastern Interconnection (EI) Electromechanical Wave Propagation and the Impact of High PV Penetration on its Speed
A power system electromechanical wave propagates from the disturbance location to the rest of system, influencing various types of protections. In addition, since more power-electronics-interfaced generation and energy storage devices are being integrated into power systems, electromechanical wave propagation speeds in the future power systems are likely to change accordingly. In this paper, GPS-synchronized measurement data from a wide-area synchrophasor measurement system FNET/GridEye are used to analyze the characteristics of electromechanical wave propagation in the U.S. Eastern Interconnection (EI) system. Afterwards, high levels of photovoltaic (PV) penetration are modeled in the EI to investigate the influences of a typical power-electronics--interfaced resource on the electromechanical wave propagation speed.
You, Shutang↗
Fs-laser processing of polydimethylsiloxane
We present an experimental analysis on surface structuring of polydimethylsiloxane films with UV (263 nm) femtosecond laser pulses, in air. Laser processed areas are analyzed by optical microscopy, SEM, and μ-Raman spectroscopy. The laser-treated sample shows the formation of a randomly nanostructured surface morphology. μ-Raman spectra, carried out at both 514 and 785 nm excitation wavelengths, prior and after laser treatment allow evidencing the changes in the sample structure. The influence of the laser fluence on the surface morphology is studied. Finally, successful electro-less metallization of the laser-processed sample is achieved, even after several months from the laser-treatment contrary to previous observation with nanosecond pulses. Our findings address the effectiveness of fs-laser treatment and chemical metallization of polydimethylsiloxane films with perspective technological interest in micro-fabrication devices for MEMS and nano-electromechanical systems.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Langasite surface acoustic wave gas sensors: modeling and verification
We report finite element simulations of the effect of conductive sensing layers on the surface wave velocity of langasite substrates. The simulations include both the mechanical and electrical influences of the conducting sensing layer. We show that three-dimensional simulations are necessary because of the out-of-plane displacements of the commonly used (0, 138.5, 26.7) Euler angle. Measurements of the transducer input admittance in reflective delay-line devices yield a value for the electromechanical coupling coefficient that is in good agreement with the three-dimensional simulations on bare langasite substrate. The input admittance measurements also show evidence of excitation of an additional wave mode and excess loss due to the finger resistance. The results of these simulations and measurements will be useful in the design of surface acoustic wave gas sensors.
47 OTHER INSTRUMENTATION↗
Aerosol jet printing of piezoelectric surface acoustic wave thermometer
Abstract Surface acoustic wave (SAW) devices are a subclass of micro-electromechanical systems (MEMS) that generate an acoustic emission when electrically stimulated. These transducers also work as detectors, converting surface strain into readable electrical signals. Physical properties of the generated SAW are material dependent and influenced by external factors like temperature. By monitoring temperature-dependent scattering parameters a SAW device can function as a thermometer to elucidate substrate temperature. Traditional fabrication of SAW sensors requires labor- and cost- intensive subtractive processes that produce large volumes of hazardous waste. This study utilizes an innovative aerosol jet printer to directly write consistent, high-resolution, silver comb electrodes onto a Y-cut LiNbO 3 substrate. The printed, two-port, 20 MHz SAW sensor exhibited excellent linearity and repeatability while being verified as a thermometer from 25 to 200 ∘ C. Sensitivities of the printed SAW thermometer are $$-96.9\times 1{0{}^{-6}}^{\circ }$$ − 96.9 × 1 0 − 6 ∘ C −1 and $$-92.0\times 1{0{}^{-6}}^{\circ }$$ − 92.0 × 1 0 − 6 ∘ C −1 when operating in pulse-echo mode and pulse-receiver mode, respectively. These results highlight a repeatable path to the additive fabrication of compact high-frequency SAW thermometers.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Continuous and Time-Domain Coherent Signal Conversion between Optical and Microwave Frequencies
A quantum network consisting of computational nodes connected by high-fidelity communication channels could expand information-processing capabilities significantly beyond those of classical networks. Superconducting qubits hold promise for scalable and high-fidelity quantum computation at microwave frequencies but must operate in an isolated cryogenic environment, obviating the potential for practical long-range communication. Quantum communication has, however, been demonstrated with optical photons. A fast efficient quantum-coherent interface between superconducting qubits and optical photons would provide a key resource for a large-scale quantum network or distributed quantum computer. Here, we describe the design and experimental operation of a device incorporating a silicon optomechanical nanobeam combined with an aluminum-nitride-based electromechanical transducer. We experimentally demonstrate classical continuous-wave operation of this device at room temperature with external conversion efficiencies of (2.5 +/- 0.4) x 10 -5 (microwave to optical) and (3.8 +/- 0.4) x 10 -5 (optical to microwave), corresponding to internal efficiencies of 2.4% and 3.7%, respectively. Finally, this device also has a larger bandwidth than previous efficient microwave-optical transducers, allowing us to operate in the time domain with 20-ns pulses.
74 ATOMIC AND MOLECULAR PHYSICS↗