Search NASA⌕ Search

SEARCH · Search NASA

Results for “ELECTRON RECOMBINATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

Measurements of recombination of electrons with H3O(plus)-(H2O)n series ions

Recombination coefficients of electrons with ions of the hydrated hydronium ion series (H3O(+))(H2O)n, where n = 0, 1, 2, 3, 4, 5, 6, were determined with a microwave afterglow/mass spectrometer apparatus. Afterglow measurements of electron density decays in helium-water vapor mixtures are correlated with the decay of mass-identified ion currents to the wall of the microwave cavity. By varying the temperature of the gas and the partial pressure of the water vapor in the mixture, different groups of hydronium series ions are made to dominate the afterglow.

Leu, M. T.↗

Elimination LArTPC Simulation Uncertainty

Liquid Argon Time Projection Chambers (LArTPC) are essential for detecting muons and neutrinos by capturing electrons released during particle collisions, which drift toward wire planes under an electric field and induce currents measured to reconstruct particle paths. However, LArTPCs face challenges from effects such as electron-ion recombination, electron diffusion, and electron attenuation, complicating data simulation. The Short Baseline Neutrino (SNB) detector aims to measure neutrinos before oscillation occurs. To bridge the gap between simulation and actual data, we propose modifying the amplitude and width of signals on the TPC wires, addressing uncertainties by adjusting signal characteristics to better match observed data. A Gaussian fit to current waveforms produces hits with associated charge and width, and by comparing data and simulated values, discrepancies highlight areas where the model fails. Initial results indicate the current modification algorithm may increase divergence between simulation and data, necessitating further refinement. A discovered bug in the WireModMakeHist_plug.cpp file, which incorrectly computed simulation and data ratios, underscores the need for precise algorithm adjustments. Future work involves correcting code errors, fine-tuning the model, and conducting multiple simulation runs to enhance statistical confidence and reduce uncertainties, ultimately aiming for accurate LArTPC operation and reliable neutrino detection.

Mkrtchyan, Ka'ren↗

Narrowing the band gap and suppressing electron–hole recombination in β-Fe 2 O 3 by chlorine doping

Here, the effects of halogen (F, Cl, Br, I, and At) doping in the direct-band-gap β-Fe 2 O 3 semiconductor on its band structures and electron–hole recombination have been investigated by density functional theory. Doping Br, I, and At in β-Fe 2 O 3 leads to transformation from a direct-band-gap semiconductor to an indirect-band-gap semiconductor because their atomic radii are too large; however, F- and Cl-doped β-Fe 2 O 3 remain as direct-band-gap semiconductors. Due to the deep impurity states of the F dopant, this study focuses on the effects of the Cl dopant on the band structures of β-Fe 2 O 3 . Two impurity levels are introduced when Cl is doped into β-Fe 2 O 3 , which narrows the band gap by approximately 0.3 eV. After doping Cl, the light-absorption edge of β-Fe 2 O 3 redshifts from 650 to 776 nm, indicating that its theoretical solar to hydrogen efficiency for solar water splitting increases from 20.6% to 31.4%. In addition, the effective mass of the holes in halogen-doped β-Fe 2 O 3 becomes significantly larger than that in undoped β-Fe 2 O 3 , which may suppress electron–hole recombination.

30 DIRECT ENERGY CONVERSION↗

Influence of tungsten doping on nonradiative electron–hole recombination in monolayer MoSe 2 with Se vacancies

Two-dimensional transition metal dichalcogenides (TMDs) are receiving significant attention due to their excellent electronic and optoelectronic properties. The material quality is greatly affected by defects that are inevitably generated during material synthesis. Focusing on chalcogenide vacancies, which constitute the most common defect, we use the state-of-the-art simulation methodology developed in our group to demonstrate that W doping of MoSe 2 with Se vacancies reduces charge carrier losses by two mechanisms. First, W doping makes the formation of double Se vacancies unfavorable, while it is favorable in undoped MoSe 2 . Second, if a Se vacancy is present, the charge carrier lifetimes are extended in the W-doped MoSe 2 . Combining ab initio real-time time-dependent density functional theory with nonadiabatic molecular dynamics, the simulations show that the nonradiative carrier losses in the presence of Se vacancies proceed by sub-10 ps electron trapping and relaxation down the manifold of trap states, followed by a 100 ps recombination of trapped electrons with free holes. The electron–vibrational energy exchange is driven by both in-plane and out-of-plane vibrational motions of the MoSe 2 layer. Additionally, the atomistic studies advance our understanding of the influence of defects on charge carrier properties in TMDs and guide improvements of material quality and development of TMD applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Angular dependent measurement of electron-ion recombination in liquid argon for ionization calorimetry in the ICARUS liquid argon time projection chamber

This paper reports on a measurement of electron-ion recombination in liquid argon in the ICARUS liquid argon time projection chamber (LArTPC). A clear dependence of recombination on the angle of the ionizing particle track relative to the drift electric field is observed. An ellipsoid modified box (EMB) model of recombination describes the data across all measured angles. These measurements are used for the calorimetric energy scale calibration of the ICARUS TPC, which is also presented. The impact of the EMB model is studied on calorimetric particle identification, as well as muon and proton energy measurements. Accounting for the angular dependence in EMB recombination improves the accuracy and precision of these measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination

Low-cost solution-based synthesis of metal halide perovskites (MHPs) invariably introduces defects in the system, which could form Shockley-Read-Hall (SRH) electron-hole recombination centers detrimental to solar conversion efficiency. Here, we investigate the nonradiative recombination processes due to native point defects in methylammonium lead halide (MAPbI 3 ) perovskites using ab initio nonadiabatic molecular dynamics within surface-hopping framework. Regardless of whether the defects introduce a shallow or deep band state, we find that charge recombination in MAPbI 3 is not enhanced, contrary to predictions from SRH theory. We demonstrate that this strong tolerance against defects, and hence the breakdown of SRH, arises because the photogenerated carriers are only coupled with low-frequency phonons and electron and hole states overlap weakly. Both factors appreciably decrease the nonadiabatic coupling. We argue that the soft nature of the inorganic lattice with small bulk modulus is key for defect tolerance, and hence, the findings are general to other MHPs.

Science & Technology - Other Topics↗

Recombination of electrons with H3(+) and H5(+) ions

A microwave afterglow-mass spectrometer apparatus is used to determine the dissociative recombination coefficients for capture of electrons by H3(+) and H5(+) ions as a function of electron temperature. At an ion and neutral temperature of 240 K, the coefficient for H3(+) is found to vary slowly with the electron temperature at first, decreasing from 1.6 x 10 to the -7th cu cm/s at an electron temperature of 240 K to 1.2 x 10 to the -7th cu cm/s at an electron temperature of 500 K; at electron temperatures ranging from 500 to 3000 K, the coefficient falls as the reciprocal of the electron temperature. It is noted that the results, which have an uncertainty of + or - 20 percent, agree satisfactorily over the common energy range (0.03-0.36 eV) with the recombination cross sections determined in merged beam measurements by Auerbach et al. (1977). Attention is also given to the implication of the results for modeling planetary atmospheres and interstellar clouds.

Macdonald, J. A.↗

Photoionization and Recombination

Theoretically self-consistent calculations for photoionization and (e + ion) recombination are described. The same eigenfunction expansion for the ion is employed in coupled channel calculations for both processes, thus ensuring consistency between cross sections and rates. The theoretical treatment of (e + ion) recombination subsumes both the non-resonant recombination ("radiative recombination"), and the resonant recombination ("di-electronic recombination") processes in a unified scheme. In addition to the total, unified recombination rates, level-specific recombination rates and photoionization cross sections are obtained for a large number of atomic levels. Both relativistic Breit-Pauli, and non-relativistic LS coupling, calculations are carried out in the close coupling approximation using the R-matrix method. Although the calculations are computationally intensive, they yield nearly all photoionization and recombination parameters needed for astrophysical photoionization models with higher precision than hitherto possible, estimated at about 10-20% from comparison with experimentally available data (including experimentally derived DR rates). Results are electronically available for over 40 atoms and ions. Photoionization and recombination of He-, and Li-like C and Fe are described for X-ray modeling. The unified method yields total and complete (e+ion) recombination rate coefficients, that can not otherwise be obtained theoretically or experimentally.

Nahar, Sultana N.↗

Electron Beam Could Probe Recombination Centers

Electron beam probe technique estimate electron/hole capture cross sections in semiconductors with wide band gaps. Amplitude-modulated electron beam induces short-circuit current collected by ohmic contacts. Phase shift between this current and electron-beam current measured as function of frequency. Results of measurements used to ascertain recombination rates and energy levels.

Vonroos, O.↗

Thermal effects mediating the flow induced by laser-induced optical breakdown

Here, a short focused laser pulse can generate a hot plasma, which expands then contracts and can eject a hot jet, the speed and direction of which is sensitive to the details of the plasma kernel. The coupling of thermal and chemical nonequilibrium plasma mechanisms with this hydrodynamic development is assessed with detailed simulations of a two-temperature, three-species plasma model. Time scales for electron recombination, thermal relaxation, and diffusion are compared to that of the plasma expansion to anticipate conditions in which these mechanisms might affect the vorticity generation that leads to the ultimate flow pattern. The effect of these mechanisms are analyzed through comparison with corresponding inert-gas and equilibrium models. Thermal-nonequilibrium effects are found to be weak due to rapid relaxation of the heavy-particle and electronic temperatures. In contrast, chemical equilibration occurs at a rate comparable to the expansion and thereby enhance both it and subsequent hydrodynamic mechanisms as the energy stored in ion formation during the preceding breakdown is released by electron recombination. Thermal conduction, enhanced by high-temperature free electrons, weakens the ejection.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

The effect of vertical drift on the equatorial F-region stability

Time-dependent ionospheric model calculations for day-time and night-time solutions are presented. The behavior of the growth rate and ion-electron recombination rate for the Rayleigh-Taylor instability on the F-region bottomside is examined as a function of the vertical eastward electric field-magnetic field strength drift velocity. It is observed that on the bottomside F-layer the growth rate exceeds the ion-electron recombination rate even without vertical drift; however, an eastward electric field-magnetic field strength drift can produce an increase in the growth rate by an order of magnitude. The calculated data are compared with previous research and good correlation is detected. The formation of bubbles from a seeding mechanism is investigated.

Hanson, W. B.↗

Half-life determination of heavy ions in a storage ring considering feeding and depleting background processes

Heavy-ion storage rings have relatively large momentum acceptance which allows for multiple ion species to circulate at the same time. This needs to be considered in radioactive decay measurements of highly charged ions, where atomic charge exchange reactions can significantly alter the intensities of parent and daughter ions. In this study, we investigate this effect using the decay curves of ion numbers in the recent 205 Tl 81+ bound-state beta decay experiment conducted using the Experimental Storage Ring at GSI Darmstadt. To understand the intricate dynamics of ion numbers, we present a set of differential equations that account for various atomic and nuclear reaction processes—bound state beta decay, atomic electron recombination and capture, and electron ionization. By incorporating appropriate boundary conditions, we develop a set of differential equations that accurately simulate the decay curves of various simultaneously stored ions in the storage ring: 205 Tl 81+ , 205 Pb 81+ , 205 Pb 82+ , 200 Hg 79+ , and 200 Hg 80+ . Through a quantitative comparison between simulations and experimental data, we provide insights into the detailed reaction mechanisms governing stored heavy ions within the storage ring. Our approach effectively models charge-changing processes, reduces the complexity of the experimental setup, and provides a simpler method for measuring the decay half-lives of highly charged ions in storage rings.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗