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At least 37 records · Page 2

Technical and personal remembrances of David A. Shirley in studies of surface magnetism, photoelectron spectroscopy, EUV lithography, and hydrogen storage

This article describes the influence of Professor David A. Shirley on the research science of one of his Ph.D. students in the diverse areas of surface magnetism, x-ray photoelectron spectroscopy (XPS), spin-resolved XPS (SRXPS), extreme ultraviolet (EUV) lithography, and hydrogen storage materials science. Examples are given from the author's work on Cr(001) surface magnetism, XPS, and SRXPS studies of multiplet-splitting in core-level photoemission from Fe. In addition, Dave's influence in understanding the radiation-induced deposition of carbon on EUV optics is described, along with the use of XPS in deciphering how hydrogen storage materials are modified by repeated hydrogen adsorption/desorption cycling. The current status of these particular topics is briefly summarized. These technical remembrances are combined with some fond personal stories about Dave, in recognition of his passing on March 29, 2021.

Klebanoff, L. E.↗

Mask-side Hyper-NA EUV imaging on the SHARP microscope

Hyper-NA, the prospective successor to high-numerical aperture (NA) extreme ultraviolet lithography (EUVL) could be inserted soon after 2030. Hyper-NA poses a number of challenges, including reduced depth of focus, amplified mask three-dimensional effects, and increased mask-side angular range. A Hyper-NA capable extreme ultraviolet (EUV) mask-imaging tool can address these challenges and accelerate research and development toward Hyper-NA. The Sharp High-Numerical Aperture Actinic Reticle Review Project (SHARP) EUV mask microscope is supporting mask-side high-NA imaging since 2015. Implementing mask-side Hyper-NA imaging in 2024 enables research and development toward the corresponding nodes of EUVL. Hyper-NA zoneplates at 0.75 4x/8x NA with a 6.7-deg chief ray angle and 0.85 4x/8x NA with a 7.4-deg chief ray angle are added to the SHARP microscope. Imaging at mask-side Hyper-NA is demonstrated. Imaging of 5-nm half-pitch (wafer scale) horizontal lines and spaces is demonstrated using dipole illumination. Imaging of 5-nm half-pitch (wafer scale) vertical lines and spaces is demonstrated using frequency-doubled imaging of 40-nm hp (mask scale) lines and spaces. Normalized image log slope (NILS) and modulation of Hyper-NA image data match closely to simulations for horizontal lines and spaces. A reduction in NILS of 0.3 or less is observed for vertical lines and spaces in the two-beam imaging regime. Through-focus image data are discussed, comparing different dipole sources and mask-side NAs. Mask-side Hyper-NA photomask imaging has been implemented and demonstrated on the SHARP microscope and is now available to users of the instrument.

Benk, Markus↗

High efficiency Al/Sc-based multilayer coatings in the EUV wavelength range above 40 nanometers

In this Letter, we have developed new and highly efficient periodic multilayer mirrors Al/Sc, Al/Sc/SiC, and Mo/Al/Sc with optimized reflectance at wavelengths between 40 and 65 nm. We have reached record values in measured peak reflectance: 57.5% at 44.7 nm and 46.5% at 51 nm, with Al/Sc/SiC at near-normal incidence. Furthermore, to the best of our knowledge, we have achieved the largest reported bandwidth with Mo/Al/Sc at 57 nm and the narrowest bandwidth with Al/Sc at a 60 nm wavelength. These new and promising results demonstrate that Al/Sc-based multilayer coatings are excellent candidates for future generations of extreme ultraviolet (EUV) instruments for solar physics, EUV lasers, and attosecond science, in a wavelength range that has not been fully explored.

36 MATERIALS SCIENCE↗

EUV FEL light source based on energy recovery linac with on-orbit laser plasma injection

We report on a week-long study of a conceptual design of EUV FEL light source based on an energy recovery linac with on-orbit laser plasma accelerator injection scheme. We carried out this study during USPAS Summer 2023 session of Unifying Physics of Accelerators, Lasers and Plasma applying the art of inventiveness TRIZ. An ultrashort Ti-sapphire laser accelerates electron beams from a gas target with mean energy of 20 MeV, which are then ramped up to 1 GeV in a five-turn scheme with a series of fixed field alternating magnets and two superconducting RF cavities (100 MeV per cavity per turn). The electron beam is then bypassed to an undulator line optimized to generate EUV light of 13.5 nm at kW level in a single pass.

43 PARTICLE ACCELERATORS↗

SBV: Characterization of Highly Reflective EUV Coatings (CRADA AWD00002394)

The overall goals were to support the development of new high efficiency EUV coatings which would dramatically reduce the energy needed in the semiconductor manufacturing lithography process as well as dramatically reducing the cost of future EUV lithography tools. The project was successful in the characterization of numerous samples generating many hundreds of datasets and critical feedback for the partner’s internal material development program.

36 MATERIALS SCIENCE↗

Special Issue “EUV and X-ray Wavefront Sensing”

This Special Issue (SI), entitled “EUV and X-ray Wavefront Sensing” is focused on original research performed by world-recognized scientists in the field and is focused on the current state-of-the-art in-situ wavefront sensing for EUV and X-ray. We believe that this SI will provide the reader with an overview of the present status and an outlook on future development in this field.

36 MATERIALS SCIENCE↗

Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications

Solution-processed photoresists have been forerunners in semiconductor patterning for decades. Even with the drastic reduction in photolithography wavelength, traditional spin-on resists still support the fabrication of the most advanced, sub-5 nm node logic and memory devices using EUV lithography (EUVL) (λ = 13.5 nm). However, trade-off between resolution, sensitivity, and roughness in the conventional resists pose a critical challenge in the race towards device downscaling to 1 nm node. While great efforts are being made to improve spin-on EUV photoresist performance, there has been emergence of new approaches focused on developing novel resists via vapor-phase processing routes, such as atomic layer deposition (ALD) and its analogs. This review summarizes recent advances in EUVL photoresist development based on ALD and its derivative techniques, which include ALD-based inorganic–organic dry resists and hybrid resists synthesized by infiltrating conventional spin-on resists. Despite being in the early stage, initial studies have shown the great potential of ALD applications in EUVL photoresist development.

36 MATERIALS SCIENCE↗

The Coupling of an EUV Coronal Wave and Ion Acceleration in a Fermi-LAT Behind-the-Limb Solar Flare

We present the Fermi-LAT observations of the behind-the-limb (BTL) flare of 2021 July 17 and the joint detection of this flare by STIX on board the Solar Orbiter. The separation between Earth and the Solar Orbiter was $99^{\circ}_{\centerdot}2$ at 05:00 UT, allowing STIX to have a front view of the flare. The location of the flare was S20E140 in Stonyhurst heliographic coordinates, making this the most distant behind-the-limb flare ever detected in >100 MeV gamma-rays. The LAT detection lasted for ~16 minutes, the peak flux was 3.6 ± 0.8 (10 –5 ) ph cm –2 s –1 with a significance >15σ. A coronal wave was observed from both STEREO-A and SDO in extreme ultraviolet (EUV), with an onset on the visible disk in coincidence with the LAT onset. A complex type II radio burst was observed by GLOSS also in coincidence with the onset of the LAT emission, indicating the presence of a shock wave. We discuss the relation between the time derivative of the EUV wave intensity profile at 193 Å as observed by STEREO-A and the LAT flux to show that the appearance of the coronal wave at the visible disk and the acceleration of protons as traced by the observed >100 MeV gamma-ray emission are coupled. We also report how this coupling is present in the data from three other BTL flares detected by Fermi-LAT, suggesting that the protons driving the gamma-ray emission of BTL solar flares and the coronal wave share a common origin.

79 ASTRONOMY AND ASTROPHYSICS↗

Materials Data on EuV(SeO4)2 by Materials Project

EuV(SeO4)2 crystallizes in the monoclinic P2_1/m space group. The structure is three-dimensional. there are two inequivalent Eu3+ sites. In the first Eu3+ site, Eu3+ is bonded in a 9-coordinate geometry to nine O2- atoms. There are a spread of Eu–O bond distances ranging from 2.35–2.73 Å. In the second Eu3+ site, Eu3+ is bonded in a 9-coordinate geometry to nine O2- atoms. There are a spread of Eu–O bond distances ranging from 2.35–2.74 Å. V5+ is bonded in a 6-coordinate geometry to six O2- atoms. There are a spread of V–O bond distances ranging from 1.66–2.46 Å. There are four inequivalent Se4+ sites. In the first Se4+ site, Se4+ is bonded in a trigonal non-coplanar geometry to three O2- atoms. There is one shorter (1.69 Å) and two longer (1.76 Å) Se–O bond length. In the second Se4+ site, Se4+ is bonded in a trigonal non-coplanar geometry to three O2- atoms. There is one shorter (1.72 Å) and two longer (1.74 Å) Se–O bond length. In the third Se4+ site, Se4+ is bonded in a trigonal non-coplanar geometry to three O2- atoms. There is one shorter (1.69 Å) and two longer (1.78 Å) Se–O bond length. In the fourth Se4+ site, Se4+ is bonded in a distorted T-shaped geometry to three O2- atoms. There is one shorter (1.72 Å) and two longer (1.75 Å) Se–O bond length. There are eleven inequivalent O2- sites. In the first O2- site, O2- is bonded in a bent 150 degrees geometry to one Eu3+ and one Se4+ atom. In the second O2- site, O2- is bonded in a 2-coordinate geometry to three Eu3+ and one Se4+ atom. In the third O2- site, O2- is bonded in a 2-coordinate geometry to two Eu3+ and one Se4+ atom. In the fourth O2- site, O2- is bonded in a single-bond geometry to one Eu3+ and one V5+ atom. In the fifth O2- site, O2- is bonded in a distorted bent 120 degrees geometry to two equivalent V5+ atoms. In the sixth O2- site, O2- is bonded in a bent 150 degrees geometry to two equivalent V5+ atoms. In the seventh O2- site, O2- is bonded in a distorted bent 120 degrees geometry to one V5+ and one Se4+ atom. In the eighth O2- site, O2- is bonded in a bent 150 degrees geometry to one Eu3+ and one Se4+ atom. In the ninth O2- site, O2- is bonded in a 3-coordinate geometry to two Eu3+ and one Se4+ atom. In the tenth O2- site, O2- is bonded in a distorted trigonal planar geometry to two Eu3+ and one Se4+ atom. In the eleventh O2- site, O2- is bonded in a 3-coordinate geometry to two equivalent V5+ and one Se4+ atom.

36 MATERIALS SCIENCE↗

Twin-pulse seeding enables pump-probe capabilities in the EUV to soft X-ray spectrum at synchrotron light sources

Having previously reported that separating the two stages of echo-enabled harmonic generation (EEHG) with one or more bending magnet (BM) sections allows the BMs to serve as the desired source of momentum compaction, here we demonstrate that this arrangement can greatly reduce the total energy modulation required by any 4th generation synchrotron light source, leading to higher repetition rates as well as stronger coherent radiation output power, with significant benefits. Since the EEHG beamline performance is mainly determined by the momentum compaction, beam emittances and beta functions of a storage ring lattice, allowing for different separations between the two stages is a straightforward way to increase the momentum compaction of chicane 1. This also enables pump-probe capabilities in a novel context, where twin-pulse seeding on the same electron bunch would allow two distinct radiation pulses with an adjustable delay in the range of 0.1 to 10 ps. In the twin-pulse seeding scheme, the same electron bunch could undergo modulation from two distinct laser pulses. Later stages would produce independent harmonics in subsequent straight sections. There are two variations of this twin-pulse seeding scheme, supporting different scientific applications. With a common modulation in stage 1, the first option allows simultaneously two independent radiation sources, with a full coverage of the EUV (2.5 to 50 nm) to soft X-ray (1.25 to 2.5 nm) spectrum; for the second option, the same stage 2 undulator could generate two coherent pulses both fitting within the FEL bandwidth, or at distinct harmonics. We present particle tracking simulation studies based on the APS-U lattice, including quantum excitation and radiation damping. These simulations indicate that there is no degradation of the modulated longitudinal phase space even when the two stages are separated by as many as 10 BM sections.

36 MATERIALS SCIENCE↗

Picometer sensitivity metrology for EUV absorber phase

With growing interest in EUV attenuated phase-shift masks due to their superior image quality for applications such as dense contact and pillar arrays, it is becoming critical to model, measure, and monitor the intensity and relative phase of multilayer and absorber reflections. We present a solution based on physical modeling of reflectometry data, which can achieve single picometer phase precision and sensitivity to changes in average film thickness below one atomic monolayer. We measure absorber and multilayer reflectivity to determine thin-film parameters with a multidimensional optimization and then acquire a new measurement of either multilayer or absorber to determine perturbations in surface contamination thickness. While it is difficult to assess the accuracy of the first step, the simplicity of the second step allows us to characterize our sensitivity to changes in contamination thickness. Thus, we apply this analysis using an initial set of measurements and repeated measurements after a period of storage. For the multilayer, the total contamination growth was 1068 pm, which occurred almost exclusively during storage (1085 pm) and decreased very slightly during repeated measurements (-17 pm). For the absorber, the behavior was quite different, with a total growth of 126 pm, which occurred much less during storage (28 pm) and primarily during repeated measurements (98 pm). Ultimately, the change in relative phase (absorber minus multilayer) was -0.86 deg for the multilayer and -1.12 deg for the absorber. We estimate the precision of the surface contamination measurement to be 3σ < 6 pm for measuring thickness and 3σ < 0.2 deg for measuring phase.

36 MATERIALS SCIENCE↗

Roadmap on cosmic EUV and x-ray spectroscopy

Cosmic EUV/x-ray spectroscopists, including both solar and astrophysical analysts, have a wide range of high-resolution and high-sensitivity tools in use and a number of new facilities in development for launch. As this bandpass requires placing the spectrometer beyond the Earth’s atmosphere, each mission represents a major investment by a national space agency such as NASA, ESA, or JAXA, and more typically a collaboration between two or three. In general justifying new mission requires an improvement in capabilities of at least an order of magnitude, but the sensitivity of these existing missions are already taxing existing atomic data quantity and accuracy. This roadmap reviews the existing missions, showing how in a number of areas atomic data limits the science that can be performed. The missions that will be launched in the coming Decade will without doubt require both more and improved measurements of wavelengths and rates, along with theoretical calculations of collisional and radiative cross sections for a wide range of processes.

79 ASTRONOMY AND ASTROPHYSICS↗

Demonstration of a ring-FEL as an EUV lithography tool

In this work, we present the required structure and function of a ring-FEL as a radiation source for extreme ultraviolet radiation lithography (EUVL). A 100 m-long straight section that conducts an extremely low emittance beam from a fourth-generation storage ring can increase the average power at 13.5 nm wavelength to up to 1 kW without degrading the beam in the rest of the ring. Here, simulation results for a ring-FEL as a EUVL source are described.

07 ISOTOPE AND RADIATION SOURCES↗

Ultrafast Dynamics and Rearrangement of the EUV Photoacid Generator Phenyl Triflate

Extreme UV photolithography is a high-energy process crucial for modern computer chip fabrication, where photoacid generators (PAGs) enhance radiation exposure by producing reactive chemical species. This study investigates the ultrafast dissociative dynamics of phenyl triflate, a widely used PAG, under high-energy ionizing conditions. The dissociative ionization of the phenyl triflate cation, which includes a molecular rearrangement that releases SO 2 and forms the phenyl trifluoromethyl ether cation, is measured over the first 5 ps. These dynamics reveal vibrational coherence corresponding to a torsional mode of the cation, involving the twisting of the phenyl group into the O–S–C plane. Electronic structure calculations for the radical cation are in good agreement with the experimentally observed vibrational coherence. These findings provide valuable insights into the behavior of phenyl triflate under ionizing conditions similar to its industrial usage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Soft X-ray and EUV emission spectra of beryllium plasma produced by neodymium-glass laser radiation with broad frequency and angular spectra

We present the results of an experimental study of soft X-ray (SXR) and extreme ultraviolet emission spectra of the plasma produced by exposing a plane solid beryllium target to laser radiation with broad frequency and angular spectra. SXR lines up to 1s – 9p of Be IV as well as the plasma continuum are recorded for a laser focal-spot intensity of 5.3 × 10{sup 13} W cm{sup −2}. To model the SXR beryllium plasma spectra, simulations are carried out using the INDHAUS programme and the FLYCHK code in the framework of local thermodynamic equilibrium model, which agree nicely with experimentally obtained results. (laser plasma)

36 MATERIALS SCIENCE↗

YbV 3 ⁢Sb 4 and EuV 3 ⁢Sb 4 vanadium-based kagome metals with Yb 2+ and Eu 2+ zigzag chains

Here, in this work, we present Yb⁢V 3 ⁢Sb 4 and Eu⁢V 3 ⁢Sb 4 , two compounds exhibiting slightly distorted vanadium-based kagome nets interleaved with zigzag chains of divalent Yb 2+ and Eu 2+ ions. Single crystal growth methods are reported alongside magnetic, electronic, and heat capacity measurements. Yb⁢V 3⁢ Sb 4 is a nonmagnetic metal with no collective phase transitions observed between 60 mK and 300 K. Conversely, Eu⁢V 3 ⁢Sb 4 is a magnetic kagome metal exhibiting easy-plane ferromagneticlike order below T C =32 K with hints of modulated spin texture under low field. With Yb⁢V 3 ⁢Sb 4 and Eu⁢V 3 ⁢Sb 4 we demonstrate another direction for the discovery and development of vanadium-based kagome metals while incorporating the chemical and magnetic degrees of freedom offered by a rare-earth sublattice.

36 MATERIALS SCIENCE↗