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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Study of Electrical Contacts and Devices in Advanced Semiconductors

Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.

Hall, H. P.↗
DOE OSTI2025

Porous Interlayers that Getter Surface-Segregating Species for Improved Silver Wetting, Adhesion, and Electrical Contact on Stainless Steel SOFC Components

Here, porous nickel interlayers or porous platinum interlayers were shown to promote the wetting, spreading, and adhesion of silver on alumina-forming ferritic stainless steel (AFFSS) and chromia-forming ferritic stainless steel (CFFSS). These interlayers resulted in dense, crack-free AFFSS|Ag-Ni|CFFSS and AFFSS|Ag-Pt|CFFSS braze joints that, after 300 h in 650 °C air, displayed shear strengths up to 70 MPa similar to, or larger than, those of AFFSS|Ag-CuO|CFFSS or AFFSS|Ag|CFFSS joints subjected to identical treatment. Similarly, after exposure to 25 cycles of (50 switches between) 12 h of 650 °C air and 12 h of 650 °C 4%H 2 –96%N 2 , AFFSS|Ag-Ni|CFFSS and AFFSS|Ag-Pt|CFFSS braze joints displayed shear strengths significantly larger than those of AFFSS|Ag-CuO|CFFSS or AFFSS|Ag|CFFSS joints subjected to identical treatment. In addition, nickel and platinum were found to chemically getter surface-segregating steel constituents, particularly Al from the AFFSS. As a result, Ag-Ni and Ag-Pt electrical contact resistances on AFFSS and CFFSS substrates were several orders of magnitude lower than those of conventional Ag-CuO reactive air brazes or Heraeus C8710 Ag contact pastes. Together, these results suggest that Ag-Pt and especially Ag-Ni may be useful for the fabrication of durable joints, seals, and/or electrical contacts in electrical/electrochemical devices exposed to high temperatures and/or variable oxygen partial pressure environments.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Analysis of electrical contact occurrences between rolling surface with application to elastohydrodynamic lubrication

A mathematical model enabling the relation of electrical contact occurrences between rolling surfaces to the mean thickness of an elastohydrodynamic lubricant film is discussed. A previous development by other authors is shown to contain an error invalidating their results. Some potentially useful approximations are developed for the case when the lubricant film is large with respect to the surface roughness. Complete solutions that are valid for all film thicknesses are not yet available.

Sidik, S. M.↗
DOE OSTI2022

Long-Term Stability of PVD/Sputtered Au Electrical Contacts to Thermoelectric Bi 2 Te 2 : Re-evaluation of SAND2015-7203

The fabrication of long-lived electrical contacts to thermoelectric Bi 2 Te 3 -based modules is a challenging problem due to chemical incompatibilities and rapid diffusion rates. Previously, technical guidance from SAND report 2015-7203 selected electroplated Au as the preferred method for fabrication of long-lived contacts because of concerns that the grain structure of sputtered/physical vapor deposited (PVD) Au contacts can evolve during aging. We have re- evaluated PVD Au contacts and show that they are appropriate for long-life service. We measure grain size and morphology at different aging times under accelerated temperature gradient conditions, and we show that the PVD Au contacts are stable and remain relatively unchanged. The PVD Au fabricated here is not subject to the deterioration observed in the previous report.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Long-Term Stability of PVD/Sputtered Au Electrical Contacts to Thermoelectric Bi 2 Te 2 (Re-evaluation of SAND2015-7203)

The fabrication of long-lived electrical contacts to thermoelectric Bi 2 Te 3 -based modules is a challenging problem due to chemical incompatibilities and rapid diffusion rates. Previously, technical guidance from SAND report 2015-7203 selected electroplated Au as the preferred method for fabrication of long-lived contacts because of concerns that the grain structure of sputtered/physical vapor deposited (PVD) Au contacts can evolve during aging. We have re-evaluated PVD Au contacts and show that they are appropriate for long-life service. We measure grain size and morphology at different aging times under accelerated temperature gradient conditions, and we show that the PVD Au contacts are stable and remain relatively unchanged. The PVD Au fabricated here is not subject to the deterioration observed in the previous report.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si cell front metallization. Our previous work showed that the I-V measurement of individual cells demonstrated exclusively the cell Rs degradation, and the "beads pattern" of electroluminescence indicated the degradation at the Ag grid of front metallization. Scanning spreading resistance microscopy (SSRM) imaging, which is based on the contact mode of atomic force microscopy and taken on the cross-sections of Ag/Si contact, revealed the electrical conduction pathway of Ag particles in point or small area contact with Si cell emitter. The SSRM results illustrated that the number of electrical contacts in the degraded cell decreased largely compared with the unaffected cell, demonstrating the direct cause of the Rs degradation. This reduction in electrical contact in the degraded cell could be caused by a structural change in the Ag grid during long-term field service: The Ag particles in contact with Si aggregate into the Ag bulk and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 m blocks the current conduction from cell emitter to the Ag grid. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the different degradation susceptibility during the long-term field service. Our results demonstrate an example of the multi-scale characterization approach for understanding photovoltaic degradation mechanisms.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2023

Metal forming and working of stabilized nanocrystalline Cu-Ta for electrical contacts

The commercialization of nanocrystalline metals and alloys is currently entering a renaissance period. Many of the processing and consolidation challenges that have haunted them are now more fully understood, opening the doors for stabilized nanocrystalline metals to be produced on a bulk scale. While challenges remain, the increased volume at which these materials are being supplied is for the first time allowing for investigations into more traditional methods of metal working, such as extruding, rolling, forming, and forging. Recently, the manufacturing science has been developed to allow nanocrystalline Cu-Ta alloys to progress to this point. This article therefore builds upon the last decade of evolutionary progression within the family of stabilized nanocrystalline Cu-Ta alloys by presenting some of the first findings related to scaled powder synthesis, production of billets, thin sheets, and foils. Here, the mechanical performance and physical properties relevant to forming electrical contacts and pins including, tensile, J-integral fracture toughness, Charpy Impact, bi-axial tension, and conductivity are reported. This introductory investigation into forming such a novel material, provides evidence to these alloys potential at bridging the gap between being a scientific curiosity to that of a real engineering material.

36 MATERIALS SCIENCE↗
NASA NTRS1983

Interfacial chemistry of electrical contacts on GaAs and Al0.3Ga0.7As

Thermal restructuring of oxides of GaAs and Al0.3Ga0.7As substrates has been studied using Auger electron spectroscopy and both neutral and secondary ion mass spectrometry. The oxide underwent restructuring at temperature of at least 250 C while gallium oxides desorbed at temperatures depending upon the type of oxide. Reoxidation at low oxygen pressures resulted in surface oxygen species different from those in native oxides. These species desorbed at about 520 C while native oxides desorbed at 600 C. Carbon-containing contaminants did not desorb. The implications of these results for electrical contacts are discussed.

Buonaquisti, A. D.↗
NASA NTRS1993

Development of superconducting YBa2Cu3O(x) wires with low resistance electrical contacts

Materials exhibiting superconductivity above liquid nitrogen temperatures (77 K) will enable new applications of this phenomena. One of the first commercial applications of this technology will be superconducting magnets for medical imaging. However, a large number of aerospace applications of the high temperature superconducting materials have also been identified. These include magnetic suspension and balance of models in wind tunnels and resistanceless leads to anemometers. The development of superconducting wires fabricated from the ceramic materials is critical for these applications. The progress in application of a patented fiber process developed by Clemson University for the fabrication of superconducting wires is reviewed. The effect of particle size and heat treatment on the quality of materials is discussed. Recent advances made at Christopher Newport College in the development of micro-ohm resistance electrical contacts which are capable of carrying the highest reported direct current to this material is presented.

Buoncristiani, A. M.↗
DOE OSTI2020

Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

In this work, a high-sensitivity 4H–SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H–SiC Schottky diodes with direct-write printed silver contacts on the 5 μ m-thick epilayer on 4H–SiC were characterized electrically in terms of the forward and reverse current–voltage and high-frequency capacitance–voltage characteristics. Furthermore, the turn-on voltage of the Schottky diodes, as established from the forward current–voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H–SiC platform for harsh environment applications.

42 ENGINEERING↗
DOE OSTI2020

Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics

For the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of 2.13$^{-0.05}_{+0.07}$A° to 5.07$^{0.83}_{+2.58}$A°,depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗