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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Machine learning for modern power distribution systems: Progress and perspectives

The application of machine learning (ML) to power and energy systems (PES) is being researched at an astounding rate, resulting in a significant number of recent additions to the literature. As the infrastructure of electric power systems evolves, so does interest in deploying ML techniques to PES. However, despite growing interest, the limited number of reported real-world applications suggests that the gap between research and practice is yet to be fully bridged. To help highlight areas where this gap could be narrowed, this article discusses the challenges and opportunities in developing and adapting ML techniques for modern electric power systems, with a particular focus on power distribution systems. These systems play a crucial role in transforming the electric power sector and accommodating emerging distributed technologies to mitigate the impacts of climate change and accelerate the transition to a sustainable energy future. The objective of this article is not to provide an exhaustive overview of the state-of-the-art in the literature, but rather to make the topic accessible to readers with an engineering or computer science background and an interest in the field of ML for PES, thereby encouraging cross-disciplinary research in this rapidly developing field. To this end, the article discusses the ways in which ML can contribute to addressing the evolving operational challenges facing power distribution systems and identifies relevant application areas that exemplify the potential for ML to make near-term contributions. At the same time, key considerations for the practical implementation of ML in power distribution systems are discussed, along with suggestions for several potential future directions.

Marković, Marija (ORCID:0000000247839837)↗
DOE OSTI2023

Effect of Measurement Temperature on Electrical Cable Frequency Domain Reflectometry Response

In nuclear power plants, electrical cables are exposed to stressors, such as elevated temperature and radiation. Evaluation of the effect of stressors on the lifetime of electrical cables can be conducted using offline electrical reflectometry techniques, such as frequency domain reflectometry (FDR). However, recent work has raised the concern that FDR measurements at temperatures higher than ambient may diminish or reduce the response due to stressors, potentially leading to incorrect predictions of electrical cable damage and lifetime. In this work, we explore the FDR response of an electrical cable exposed to an oven-based thermal stressor up to 140°C, including both ramping up and ramping down temperature. It was observed that, for both the oven entrance and exit, an increase in the FDR measurement temperature led to a decrease in the FDR reflection coefficient. In particular, it was found that the reflection coefficient at the oven entrance decreased from the ambient measurement by approximately 7%, 22%, and 36% at a temperature of 60°C, 100°C, and 140°C, respectively.

Spencer, Mychal P.↗
DOE OSTI2022

Analysis of electrically conductive adhesives in shingled solar modules by X-ray imaging techniques

The failure mechanisms of electrically conductive adhesives (ECAs) in solar modules are difficult to study since the ECA layer is not easily accessible within the module package. In this work, we present two complementary imaging modalities—X-ray radiography and X-ray microcomputed tomography (XCT)—that reveal important morphological features of the ECA within a shingled module. X-ray radiography uses single X-ray projections to provide fast and non-destructive imaging of the shingled interconnection, illuminating the alignment of the ECA relative to the busbars, the size and shape of the ECA, and the presence of voids within it. Through X-ray radiography, we observed, for example, that the average void coverage area of ECA segments reduced from 36.7% to 4.4% when an ECA was cured for 60 s prior to module lamination. XCT is a three-dimensional imaging technique that can identify regions in which the ECA makes electrical contact to busbars on cells and regions in which the ECA has cracked, among other features. XCT can also be used to image the individual metal particles within ECA, from which the metal volume fraction of an ECA was found here to be 70.4%. This is a quantity that is not often reported by ECA manufacturers but is important to ensure isotropic conduction. As X-ray projections can be performed non-destructively on full modules, the technique may be used to pinpoint ECA failures in accelerated degradation testing. XCT is complementary and is suited to forensic analysis of failing modules.

14 SOLAR ENERGY↗
DOE OSTI2023

Dielectrics Under Extreme Electric Fields: In Situ Studies on Nanoscale Mechanisms (Final Technical Report)

The lack of materials that can function reliably under extreme electric fields is a critical roadblock to achieving higher energy efficiency and extended service lifetime of devices in electricity generation, transmission, and consumption. Materials typically fail at two or three orders of magnitude below their theoretical dielectric breakdown strength. Identifying the origins of premature dielectric breakdown using state-of-the-art characterization tools will, therefore, enable the design and discovery of transformational materials capable of approaching their intrinsic limits. The vast improvement in the resolution power of imaging tools, combined with the recently developed in situ electric biasing technique, has made high resolution observations of dielectric breakdown as it happens possible. The overall goal of the project is to directly image the dynamic processes of defect formation, accumulation, and interaction with preexisting defects (e.g., dislocations, domain walls, and grain boundaries in crystalline dielectric films) under electric fields up to 1,000 MV/m with a temporal resolution better than 5 microseconds. Using the newly acquired, custom-made Hysitron PI95 transmission electron microscopy (TEM) specimen holder, in situ TEM observations of breakdown at the sub nanometer resolution will be made on representative dielectric compounds with progressive complexities: the linear dielectric SiO 2 , CuO, and TiO 2 , the ferroelectric BaTiO 3 nanocrystals and nanocubes. Through direct observation of the breakdown event at high spatial and temporal resolutions, the nanoscale mechanisms for the failure of dielectrics under intense electric fields will be identified. The results of the project will be applied to the design and processing of new dielectric materials with higher efficiency, improved reliability, and a prolonged lifetime. Such new dielectrics are urgently needed for modernizing energy infrastructures.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

DC electrical conductivity measurements of warm dense matter using ultrafast THz radiation

We describe measurements of the DC electrical conductivity of warm dense matter using ultrafast terahertz (THz) pulses. THz fields are sufficiently slowly varying that they behave like DC fields on the timescale of electron–electron and electron–ion interactions and hence probe DC-like responses. Using a novel single-shot electro-optic sampling technique, the electrical conductivity of the laser-generated warm dense matter was determined with <1 ps temporal resolution. We present the details of the single-shot THz detection methodology as well as considerations for warm dense matter experiments. We, then, provide proof-of-concept studies on aluminum driven to the warm dense matter regime through isochoric heating and shock compression. Our results indicate a decrease in the conductivity when driven to warm dense matter conditions and provide a platform for future warm dense matter studies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Low-Cost Handle Study for Photovoltaics on Transfer Printed Virtual Substrates

This work expands upon previous research related to transfer printed virtual substrates: a technique for generating low-cost engineered substrates that is not based on wafer reuse. Here, silicon and sapphire are evaluated as candidate low-cost handle materials, validated by metal organic chemical vapor deposition regrowth of GaAs single-junction solar cells. Resulting devices are studied via materials and electrical characterization techniques, including concentration measurements that indicate GaAs//sapphire TPVS open-circuit voltage at >10 suns comparable with identical devices grown on a prime GaAs substrate.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2025

Understanding the optoelectronic properties of doped 2D organic-inorganic halide perovskite quantum wells: towards efficient ultrafast quantum well IR photodetectors

This project, titled “Understanding the optoelectronic properties of doped 2D organic-inorganic halide perovskite quantum wells: towards efficient quantum well IR photodetectors”, was funded by the U.S. Department of Energy to explore a new class of materials that could make future light-sensing technologies, such as infrared (IR) cameras and detectors more efficient, affordable, and widely available. The research focused on special layered materials called 2D halide perovskites, which are made up of alternating organic and inorganic layers only a few atoms thick. These materials can be tuned at the atomic level to absorb and emit light in precise ways, making them very attractive for use in optoelectronic devices. The main goal of the project was to understand how these perovskite materials absorb light and move electrical charges at very small scales. However, this is not an easy task. These materials often contain a mixture of different structures in the same film, and traditional tools like regular absorption or photoluminescence spectroscopy are not good at telling those structures apart. To solve this, the research team, led by Professor Luisa Whittaker-Brooks at the University of Utah developed a powerful method called electroabsorption spectroscopy. This technique uses electric fields to highlight the unique “fingerprints” of different excitons, which are tiny packets of energy formed when light hits the material. By using this method, the team could separate overlapping signals and learn exactly how the materials respond to light under different conditions, including changes in temperature, thickness, and chemical makeup.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Electric Motor Thermal Management

During FY 2022, NREL efforts focused on supporting collaborations with external research partners within the Electric Drive Technologies research consortium. The poster highlights collaborations with SNL, ORNL, and Georgia Tech. The collaboration with SNL utilized NREL's experimental capabilities to mechanically characterize SNL-provided material samples for motor applications. The collaboration with ORNL supported efforts to refine the design of a high-speed, non-heavy-rare-earth outer-rotor motor. The collaboration with Georgia Tech focused on a novel cooling technique for electric machines. NREL supported the effort by leading the thermal analysis and design of advanced machines.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

Size-Dependent Electrical Transport Properties in Conducting Diamond Nanostripes

With the advances in nanofabrication technology, horizontally aligned and well-defined nitrogen-doped ultrananocrystalline diamond nanostripes can be fabricated with widths in the order of tens of nanometers. The study of the size-dependent electron transport properties of these nanostructures is crucial to novel electronic and electrochemical applications. In this paper, 100 nm thick n-type ultrananocrystalline diamond thin films were synthesized by microwave plasma-enhanced chemical vapor deposition method with 5% N2 gas in the plasma during the growth process. Then the nanostripes were fabricated using standard electron beam lithography and reactive ion etching techniques. The electrical transport properties of the free-standing single nanostripes of different widths from 75 to 150 nm and lengths from 1 to 128 μm were investigated. The study showed that the electrical resistivity of the n-type ultrananocrystalline diamond nanostripes increased dramatically with the decrease in the nanostripe width. The nanostripe resistivity was nearly doubted when the width was reduced from 150 nm to 75 nm. The size-dependent variability in conductivity could originate from the imposed diffusive scattering of the nanostripe surfaces which had a further compounding effect to reinforce the grain boundary scattering.

Zhou, Andrew F. (ORCID:0000000243050409)↗
DOE OSTI2023

Efficient Hydraulic-to-electric Energy Conversion for PCM-based Ocean Thermal Gradient Energy System to Power Uncrewed Underwater Vehicles

Since the 2000, there have been numerous investigations into electrical energy storage types that use ocean thermal-to-electricity conversion techniques. Field tests have demonstrated that this technology is feasible for UUVs with long-term missions of over 3,000 km per deployment. Nonetheless, the energy generated by this method is not sufficient to meet the energy requirements of Unscrewed Underwater Vehicles (UUVs). The objective of this study is to design a highly effective ocean thermal gradient energy system to support long-term missions of a UUV. To enhance the performance of the thermal gradient energy system, we have developed a hybrid type (buoyancy regulation and electrical storage). Phase Change Material (PCM)-based energy harvesting system to facilitate efficient UUV operations. A prototype of the hydraulic-to-electric conversion system was implemented, and experimental findings indicate that the hybrid system successfully delivers hydraulic energy for buoyancy change and improved efficiency of hydraulic-to-electric energy conversion, demonstrating its potential as a promising technology for supporting long-term UUV missions.

Deng, Zhiqun↗
DOE OSTI2022

Ultrathin Ruthenium Films on Graphene Buffered SiO 2 via Quasi Van der Waals Epitaxy

In this study, we demonstrate a quasi van der Waals epitaxy approach to prepare single crystalline Ru ultrathin film on large scale, monolayer graphene. Physical and epitaxial properties of bulk, near surface and surface of ultrathin Ru films were comprehensively studied using various structural, morphological, compositional, and electrical characterization techniques. Here, we confirm that Ru can epitaxially grow on single, monolayer graphene using magnetron sputtering at elevated temperature of 600 °C. The epitaxial Ru films with film thickness ranging from 94.2 nm down to 3.9 nm show the (0001) out-of-plane orientation. The epitaxial relationships between Ru and graphene are out-of-plane Ru(0001) || graphene(0001) and in-plane Ru[$11\bar20$] || graphene[$11\bar20$]. All the Ru films show smooth surfaces with root-mean-square roughness less than 0.8 nm and have negligible oxide layer on the surfaces. The Ru films on graphene demonstrate significantly reduced electrical resistivity comparing to their counterpart grown on bare SiO 2 , which show polycrystalline nature. For 7.1 to 3.9 nm film thicknesses, the resistivity of Ru on graphene shows 38 to 45% resistivity decrease from that of Ru film on bare SiO 2 without graphene. Our observations suggest the existence of the above-classical van der Waals interaction between Ru and graphene. On the other hand, graphene is capable of effectively blocking the inter-diffusion/interaction between Ru and SiO 2 during a 1000 °C annealing process.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electronic structure of the honeycomb iridate Cu 2 ⁢IrO 3 at high pressure

Cu 2 IrO 3 has attracted recent interest due to its proximity to the Kitaev quantum spin liquid state and the complex structural response observed at high pressures. We use x-ray spectroscopy and scattering as well as electrical transport techniques to unveil the electronic structure of Cu 2 IrO 3 at ambient and high pressures. Despite featuring a Ir 4+ J eff = 1/2 state at ambient pressure, Ir L 3 -edge resonant inelastic x-ray scattering reveals broadened electronic excitations that point to the importance of Ir 5d-Cu 3d interaction. High pressure first drives an Ir-Ir dimer state with collapsed < L · S > and < L z >/< S z >, signaling the formation of 5d molecular orbitals. A novel Cu → Ir charge transfer is observed above 30 GPa at low temperatures, leading to an approximate Ir 3+ and Cu 1.5+ valence, with persistent insulating electrical transport seemingly driven by charge segregation of Cu 1+ /Cu 2+ ions into distinct sites. Concomitant x-ray spectroscopy and diffraction measurements through different thermodynamic paths demonstrate a strong electron-lattice coupling, with J eff = 1/2 and Ir 3+ /Cu 1.5+ electronic states occurring only in phases 1 and 5, respectively. Remarkably, the charge-transfer state can only be reached if Cu 2 IrO 3 is pressurized at low temperature, suggesting that phonons play an important role in the inhibiting this phase. Furthermore, these results point to the choice of thermodynamic path across interplanar collapse transition as a key parameter to access novel states in intercalated iridates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Evaluation of PV Module Packaging Strategies of Monofacial and Bifacial PERC Using Degradation Pathway Network Modeling

As the PV industry is rapidly expanding, it is important to thoroughly investigate the long-term impact of packaging strategies on the performance of PV modules. In this study, the variants in sets differ on the basis of manufacturer (A/B), encapsulant (EVA/POE), rear encapsulant (UV-cutoff/opaque/transparent), module architecture (GB/DG) and cell type (monofacial/bifacial). The minimodules were exposed for 2520 hours in modified damp heat, with or without full spectrum light. Every 504 hours, stepwise electrical characterization techniques were employed to track changes in minimodules. Degradation pathway modeling using network structural equation modeling was employed to study pairwise relationships between variables and service lifetime prediction in minimodules. Through this study, differences in quality control are identified in minimodules made by different manufacturers. Minimodules with UV-cutoff rear encapsulant show relatively better stability, whereas the ones with opaque rear encapsulant show greater power loss. In addition, GB having UV-cutoff rear encapsulation and GB with POE having opaque rear encapsulation were identified to be stable as they lack a best model fit. Here, the primary power loss mechanism in degrading variants is interconnect corrosion.

14 SOLAR ENERGY↗
DOE OSTI2026

Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering

Understanding mechanisms influencing electrical transport in material systems not only provides a scientific explanation for observed behavior but also offers insight into ways to enhance transport in devices. This study reports experimental hole mobility of 8 x 10 4 cm 2 V -1 s -1 in a Ge 0.92 Sn 0.08 , the highest recorded mobility for the GeSn system. A study of the material's quality is presented using structural and electrical characterization techniques, with transport data being supported by simulations using an extensive modeling framework. Quantum Hall measurements further indicate the material's high quality and potential spintronic applications, with extracted values of 0.0689$m$ 0 and 13.6 for the effective mass and effective g‐factor, respectively. It is observed that transport is limited by alloy disorder scattering at cryogenic temperatures. A comparative study between the presented structure and similar quantum well heterostructures revealed that the difference in hole mobilities is captured by a disparity in the reduced nominal alloy disorder scattering potential (Δ U alloy = 0.8 eV), that is lower than the value of a fully random alloy (Δ U alloy = 1.4–1.7 eV) potential. The difference in Δ U alloy suggests that heterostructures with similar geometries and alloy compositions can have different alloy disorder scattering, implying that an underlying mechanism, such as short‐range order, may be responsible and warrants further investigation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules

A low-temperature co-fired ceramic (LTCC)-based optocoupler design is demonstrated as a possible solution for optical isolation in high-density integrated power modules. The design and fabrication of LTCC based package are discussed. Commercially available aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) double heterostructure is used both as emitter and photodetector in the proposed optocoupler. A detailed study on the electroluminescence and spectral response of the AlGaAs/GaAs structure is conducted at elevated temperatures. The material figure of merit parameter, D*, is calculated in the temperature range 77–800 K. The fabricated optocoupler is tested at elevated temperatures, and the results are presented.

42 ENGINEERING↗
DOE OSTI2020

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O 3 treatments

Plasma etching of p-type GaN creates n-type nitrogen vacancy (V N ) defects at the etched surface, which can be detrimental to device performance. In mesa isolated diodes, etch damage on the sidewalls degrades the ideality factor and leakage current. Here a treatment was developed to recover both the ideality factor and leakage current, which uses UV/O 3 treatment to oxidize the damaged layers followed by HF etching to remove them. The temperature dependent I–V measurement shows that the reverse leakage transport mechanism is dominated by Poole–Frenkel emission at room temperature through the etch-induced V N defect. Depth resolved cathodoluminescence confirms that the damage is limited to first several nanometers and is consistent with the V N defect.

42 ENGINEERING↗
DOE OSTI2025

Epitaxial integration of superconducting nitrides with cubic GaN

Epitaxial combination of transition metal nitrides and group III-nitrides holds significant potential for novel device architectures, given their wide array of properties and similar lattice constants. However, the mixture of hexagonal and cubic crystals limits structural quality and has stymied development. This work will discuss the molecular beam epitaxy synthesis of metastable cubic GaN on 3C-SiC templates and its integration with cubic ZrN and NbN superconductors in single and multilayer heterostructures. The fully cubic nature of GaN and the epitaxial nature of all layers are confirmed via in situ and ex situ techniques. The electrical transport properties of transition metal nitrides on cubic GaN (001) are compared to those grown directly on 3C-SiC (001) and c-plane hexagonal GaN templates. The determination of a similar growth window for cubic wide-bandgap and superconducting metal nitrides creates a platform for new epitaxial device architectures and potential applications in metamaterials, quantum information science, and condensed matter physics.

Condensed matter physics↗
DOE OSTI2020

Study of the ferromagnetic quantum phase transition in Ce 3– x Mg x Co 9

The Ce 3-x Mg x Co 9 system evolves from a Pauli paramagnetic ground state for x = 0 to a ferromagnetic ground state for x≈0.80 in single-phase, polycrystalline samples [Lamichhane, V. Taufour, A. Palasyuk, Q. Lin, S.L. Budko, and P.C. Canfield, Ce3-xMgxCo9 : transformation of a Pauli paramagnet into a strong permanent magnet, Phys. Rev. Appl. 9 (2018), p. 024023]. In order to better understand this behaviour, single-crystalline samples of Ce 3-x Mg x Co 9 for x = 0.01, 0.16, 0.24, 0.35, 0.43 and 0.50 were grown using the flux growth technique, and electrical transport and magnetic properties were studied. The T C-x phase diagram we infer shows that the system has a quantum phase transition near x = 0.35, transforming to a ferromagnetic ground state.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗