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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The first active nano-electronic device flown in space was launched on a flight demonstration of a nano-chemical sensor aboard a US Navy satellite in 2007. The same sensor was flown again to the International Space Station (ISS) in 2009 as part of JPL electronic nose for crew cabin air quality monitoring.
Second volume of bibliography summarizes literature on radiation effects on new electronic devices. Includes those of protons, electrons, neutrons, gamma rays, and cosmic rays at energies up to about 20 GeV. Volume contains 219 abstracts from unclassified sources. Organized into four sections: dose-rate effects, new technology, post-irradiaton effects, and test environments.
The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.
Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.
Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.
A compilation of data on personal electronic devices (PEDs) attributed to having created anomalies with aircraft systems. Charts and tables display 14 years of incidents reported by pilots to the Aviation Safety Reporting System (ASRS). Affected systems, incident severity, sources of anomaly detection, and the most frequently identified PEDs are some of the more significant data. Several reports contain incidents of aircraft off course when all systems indicated on course and of critical events that occurred during landings and takeoffs. Additionally, PEDs that should receive priority in testing are identified.
Cardiac implantable electronic devices (CIED) are sensitive to scattered secondary neutrons from proton beam irradiation. This experimental in vitro study investigated risk of CIED errors during pencil beam proton therapy.
The need to detect unauthorized usage of intentionally transmitting portable electronic devices (PEDs) onboard commercial aircraft is growing, while still allowing passengers to use selected unintentionally transmitting devices, such as laptop computers and CD players during non-critical stages of flight. The following paper presents an installed system for detecting PEDs over multiple frequency bands. Additionally, the advantages of a fixed verses mobile system are discussed. While data is presented to cover the frequency range of 20 MHz to 6.5 GHz, special attention was given to the Cellular/PCS bands as well as Bluetooth and the FRS radio bands. Measurement data from both the semi-anechoic and reverberation chambers are then analyzed and correlated with data collected onboard a commercial aircraft to determine the dominant mode of coupling inside the passenger cabin of the aircraft versus distance from the source. As a final check of system feasibility, several PEDs transmission signatures were recorded and compared with the expected levels.
With the increasing pressures to allow wireless devices on aircraft, the susceptibility of aircraft receivers to interference from Portable Electronic Devices (PEDs) becomes an increasing concern. Many investigations were conducted in the past, with limited success, to quantify device emissions, path loss, and receiver interference susceptibility thresholds. This paper outlines the recent effort in determining the receiver susceptibility thresholds for ILS, VOR and GPS systems. The effort primarily consists of analysis of data available openly as reported in many RTCA and ICAO documents as well as manufacturers data on receiver sensitivity. Shortcomings with the susceptibility threshold data reported in the RTCA documents are presented, and an approach for an in-depth study is suggested. In addition, intermodulation products were observed and demonstrated in a laboratory experiment when multiple PEDs were in the proximity of each other. These intermodulation effects generate spurious frequencies that may fall within aircraft communication or navigation bands causing undesirable effects. Results from a preliminary analysis are presented that show possible harmful combinations of PEDs and the potentially affected aircraft bands.
Multiphonon orbit lattice relaxation of excited states of rare earth ions in crystals, using results to design quantum electronic devices
A self-assembling element fabricated using integrated circuit techniques may provide a small diameter helical conductor surrounding an electron beam for the construction of a vacuum electronic device such as a traveling-wave tube for terahertz scale signal.
Motile plant structures such as Mimosa pudica leaves, Impatiens glandulifera seedpods, and Dionaea muscipula leaves exhibit fast nastic movements in a few seconds or less. This motion is stimuli-independent mechanical movement following theorema egregium rules. Artificial analogs of tropistic motion in plants are exemplified by shape-morphing systems, which are characterized by high functional robustness and resilience for creating 3D structures. However, all shape-morphing systems developed so far rely exclusively on continuous external stimuli and result in slow response. Here, we report a Gaussian-preserved shape-morphing system to realize ultrafast shape morphing and non-volatile reconfiguration. Relying on the Gaussian-preserved rules, the transformation can be triggered by mechanical or thermal stimuli within a microsecond. Moreover, as localized energy minima are encountered during shape morphing, non-volatile configuration is preserved by geometrically enhanced rigidity. Using this system, we demonstrate a suite of electronic devices that are reconfigurable, and therefore, expand functional diversification.
The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale electronic devices. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal grapheme sheet, more complex joints require other mechanisms. In this work we explore structural and electronic properties of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme.
Report prepared describes equipment and summarizes both pretest and onsite procedures for testing of digital electronic devices for susceptibility to single-event upset. Term "single-event upset" denotes variety of temporary or permanent bit flips or latchup induced by single particles of ionizing radiation. Vacuum chamber houses device under test while exposed to ion beam. Vacuum chamber and associated equipment must be brought to ion-beam facility for test.
Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.
Metamaterials (MTMs) are structured materials with subwavelength features that can be engineered to have some unique properties not found in nature, such as negative refractive index, reversed Doppler effect, and reversed Cherenkov radiation. Based on these novel MTMs, several important research groups have made great attempts to develop novel MTM-inspired vacuum electron devices (VEDs) and accelerators. Just as solid-state power devices are innovated by incessant emerging of new semiconductor materials, VEDs can also be inspired by MTMs to have very remarkable advantages, such as smaller size, higher power, higher efficiency, and/or larger gain relative to conventional VEDs, such as traveling-wave tubes, backward-wave oscillators, and klystrons. Similarly, relative to conventional accelerators, MTM-inspired accelerators have obvious advantages, such as smaller size and higher accelerating gradient. Furthermore, MTM-inspired devices have promising applications in areas such as radar, communication, electronic warfare, microwave heating, and imaging.
This presentation reports the results of recent proton and heavy ion Single Event Effect (SEE) testing on a variety of COTS and non-COTs electronic devices and assemblies tested for the Space Shuttle, International Space Station (ISS) and Multi-Purpose Crew Vehicle (MPCV).
Report describes research on use of x-ray diffraction to measure stresses in metal conductors of complementary metal oxide/semiconductor (CMOS) integrated circuits exposed to ionizing radiation. Expanding upon report summarized in "X-Ray-Diffraction Tests Of Irradiated Electronic Devices: I" (NPO-18803), presenting data further suggesting relationship between electrical performances of circuits and stresses and strains in metal conductors.