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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

Measurement Capabilities of Planar Doppler Velocimetry in Large-Scale Wind Tunnels

Over the past few years, Planar Doppler Velocimetry (PDT) has been shown by several laboratories to offer an attractive means for measuring three-dimensional velocity vectors everywhere in a light sheet placed in a flow. Unlike some other optical means of measuring flow velocities, PDT is particularly attractive for use in large wind tunnels where distances to the sample region may be several meters, because it does not require the spatial resolution and tracking of individual scattering particles or the alignment of crossed beams at large distances. To date, demonstrations of PDT (also called Doppler Global Velocimetry by some authors) have been made either in low speed flows without quantitative comparison to other measurements, or in supersonic flows where the Doppler shift is large and its measurement is relatively insensitive to instrumental errors. Moreover, most reported applications have relied on the use of continuous-wave lasers, which limit the measurement to time-averaged velocity fields. This work summarizes the results of two previous studies of PDT in which the use of pulsed lasers to obtain instantaneous velocity vector fields is evaluated. The objective has been to quantitatively define and demonstrate PDT capabilities for applications in large-scale wind tunnels that are intended primarily for the testing of rotorcraft and subsonic aircraft at speeds typically less than 100 m/s. For such applications, the adequate resolution of low-speed flow fields requires accurate measurements of small Doppler shifts that are obtained at distances of several meters from the sample region and with a field of view that is sufficient to encompass the entire region of interest. The use of pulsed lasers provides the unique capability to obtain not only time-averaged fields, but also their statistical fluctuation amplitudes and the spatial excursions of unsteady flow regions such as wakes, separations, and rotor-tip vortices. To accomplish the objectives of these studies, the PDT measurement process was first modeled and its performance evaluated computationally. The noise sources considered included those related to the optical and electronic properties of Charge-Coupled Device (CCD) arrays and to speckle effects associated with the coherent illumination of aerosols from pulsed lasers. The signal noise estimates were incorporated into the PDT signal analysis process and combined with computed scattering signals using a Mae scattering theory for a distributed range of aerosol particle sizes. The results are used to define the necessary instrument configuration, to show that the expected signal levels from a practical PDT system are sufficiently large to allow its useful application in large facilities, and to show that the expected velocity measurement uncertainties are small compared to the mean velocities of interest for most subsonic, large-scale wind tunnel testing, Experimental studies using several bench-top setups are then described that validate the physics of the PDT model and demonstrate the ability to obtain accurate PDT measurements using procedures that are compatible with large-scale wind tunnel operations. The PDT measurement capabilities found in this study lead to the conclusion that PDT offers significant advantages compared to other means of measuring velocity fields in large-scale wind tunnels, including those operating at low speeds.

McKenzie, Robert L.↗
NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗
NASA NTRS2003

Thermo-Electron Ballistic Coolers or Heaters

Electronic heat-transfer devices of a proposed type would exploit some of the quantum-wire-like, pseudo-superconducting properties of single-wall carbon nanotubes or, optionally, room-temperature-superconducting polymers (RTSPs). The devices are denoted thermo-electron ballistic (TEB) coolers or heaters because one of the properties that they exploit is the totally or nearly ballistic (dissipation or scattering free) transport of electrons. This property is observed in RTSPs and carbon nanotubes that are free of material and geometric defects, except under conditions in which oscillatory electron motions become coupled with vibrations of the nanotubes. Another relevant property is the high number density of electrons passing through carbon nanotubes -- sufficient to sustain electron current densities as large as 100 MA/square cm. The combination of ballistic motion and large current density should make it possible for TEB devices to operate at low applied potentials while pumping heat at rates several orders of magnitude greater than those of thermoelectric devices. It may also enable them to operate with efficiency close to the Carnot limit. In addition, the proposed TEB devices are expected to operate over a wider temperature range

Choi, Sang H.↗
NASA NTRS1995

ZnO films on /001/-cut (110)-propagating GaAs substrates for surface acoustic wave device applications

A potential application for piezoelectric films substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on /001/-cut group of (110) zone axes-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(sup 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2 or Si3N4 on /001/-cut GaAs samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. It was found that near the group of (110) zone axes propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the (100) direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

Hickernell, Frederick S.↗
NASA NTRS1995

ZnO Films on {001}-Cut <110>-Propagating GaAs Substrates for Surface Acoustic Wave Device Applications

A potential application for piezoelectric films on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on {001}-cut <110> -propagating GaAs substrates are investigated in this article, including SAW Velocity effective piezoelectric coupling constant, propagation loss. diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films or different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(exp 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2, or Si3N4 on {001}-cut GaAs samples are reported using two different techniques: 1) knife-edge laser probe, 2) line-focus-beam scanning acoustic microscope. It was found that near the <110> propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the <100> direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

Kim, Yoonkee↗
NASA NTRS1995

Applications of Silicon Carbide for High Temperature Electronics and Sensors

Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology.

Silicon Carbide↗
NASA NTRS1999

Start Up Application Concerns with Field Programmable Gate Arrays (FPGAs)

This note is being published to improve the visibility of this subject, as we continue to see problems surface in designs, as well as to add additional information to the previously published note for design engineers. The original application note focused on designing systems with no single point failures using Actel Field Programmable Gate Arrays (FPGAs) for critical applications. Included in that note were the basic principles of operation of the Actel FPGA and a discussion of potential single-point failures. The note also discussed the issue of startup transients for that class of device. It is unfortunate that we continue to see some design problems using these devices. This note will focus on the startup properties of certain electronic components, in general, and current Actel FPGAs, in particular. Devices that are "power-on friendly" are currently being developed by Actel, as a variant of the new SX series of FPGAs. In the ideal world, electronic components would behave much differently than they do in the real world, The chain, of course, starts with the power supply. Ideally, the voltage will immediately rise to a stable V(sub cc) level, of course, it does not. Aside from practical design considerations, inrush current limits of certain capacitors must be observed and the power supply's output may be intentionally slew rate limited to prevent a large current spike on the system power bus. In any event, power supply rise time may range from less than I msec to 100 msec or more.

Katz, Richard B.↗
NASA NTRS2010

Electrical Switching of Perovskite Thin-Film Resistors

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Liu, Shangqing↗
NASA NTRS1986

Theoretical and material studies on thin-film electroluminescent devices

Electroluminescent materials and device technology were assessed. The evaluation strongly suggests the need for a comprehensive theoretical and experimental study of both materials and device structures, particularly in the following areas: carrier generation and multiplication; radiative and nonradiative processes of luminescent centers; device modeling; new device concepts; and single crystal materials growth and characterization. Modeling of transport properties of hot electrons in ZnSe and the generation of device concepts were initiated.

Summers, C. J.↗
NASA NTRS2004

Open-Source Software for Modeling of Nanoelectronic Devices

The Nanoelectronic Modeling 3-D (NEMO 3-D) computer program has been upgraded to open-source status through elimination of license-restricted components. The present version functions equivalently to the version reported in "Software for Numerical Modeling of Nanoelectronic Devices" (NPO-30520), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 37. To recapitulate: NEMO 3-D performs numerical modeling of the electronic transport and structural properties of a semiconductor device that has overall dimensions of the order of tens of nanometers. The underlying mathematical model represents the quantum-mechanical behavior of the device resolved to the atomistic level of granularity. NEMO 3-D solves the applicable quantum matrix equation on a Beowulf-class cluster computer by use of a parallel-processing matrix vector multiplication algorithm coupled to a Lanczos and/or Rayleigh-Ritz algorithm that solves for eigenvalues. A prior upgrade of NEMO 3-D incorporated a capability for a strain treatment, parameterized for bulk material properties of GaAs and InAs, for two tight-binding submodels. NEMO 3-D has been demonstrated in atomistic analyses of effects of disorder in alloys and, in particular, in bulk In(x)Ga(1-x)As and in In(0.6)Ga(0.4)As quantum dots.

Oyafuso, Fabiano↗
NASA NTRS1991

Infrared power cells for satellite power conversion

An analytical investigation is performed to assess the feasibility of long-wavelength power converters for the direct conversion of IR radiation onto electrical power. Because theses devices need to operate between 5 and 30 um the only material system possible for this application is the HgCdTe system which is currently being developed for IR detectors. Thus solar cell and IR detector theories and technologies are combined. The following subject areas are covered: electronic and optical properties of HgCdTe alloys; optimum device geometry; junction theory; model calculation for homojunction power cell efficiency; and calculation for HgCdTe power cell and power beaming.

Summers, Christopher J.↗
NASA NTRS1975

The preparation and properties of aluminum nitride films

Aluminum nitride films have been deposited on silicon substrates at 800-1200 C by the pyrolysis of an aluminum trichloride-ammonia complex, AlCl3.3NH3, in a gas flow system. The deposit was transparent, tightly adherent to the substrate, and was confirmed to be aluminum nitride by X-ray and electron diffraction techniques. The deposited aluminum nitride films were found to be polycrystalline with the crystallite size increasing with increasing temperature of deposition. Other properties of aluminum nitride films relevant to device applications, including density, refractive index, dissolution rate, dielectric constant, and masking ability, have been determined. These properties indicate that aluminum nitride films have potential as a dielectric in electronic devices.

Chu, T. L.↗
NASA NTRS1982

Plasma characteristics of a 17 cm diameter line-cusp ion thruster

A 17 cm line cusp argon ion thruster has been subjected to a variety of tests using collecting probes in an attempt to determine and understand its plasma properties. Plasma density, space potential and electron temperature have been mapped throughout the interior of the device for several sets of operating conditions. Electron and ion losses have been measured in and near the cusps. Correlations between interior plasma properties and external parameters such as discharge current and beam current are made where appropriate and are found to be understandable in terms of basic plasma concepts. However, a simple model, which cannot account for spatial variations of the plasma parameters, is not able to predict the performance of the device. Directions for further work are discussed.

Carpenter, R. T.↗
NASA NTRS1999

Carbon Nanotubules: Building Blocks for Nanometer-Scale Engineering

The proposed work consisted of two projects: the investigation of fluid permeation and diffusion through ultrafiltration membranes composed of carbon nanotubules and the design and study of molecular transistors composed of nanotubules. The progress made on each project is summarized and also discussion about additional projects, one of which is a continuation of work supported by another grant, is included. The first project was Liquid Interactions within a Nanotubule Membrane. The second was the design of nanometer-scale hydrocarbon electronic devices. The third was the investigation of Mechanical properties of Nanotubules and Nanotubule bundles. The fourth project was to investigate the growth mechanisms of Carbon Nanotubules.

Sinnott, Susan B.↗
NASA NTRS2003

Effect of Alignment on Transport Properties of Carbon Nanotube/Metallic Junctions

Ballistic and spin coherent transport in single walled carbon nanotubes (SWCNT) are predicted to enable high sensitivity single-nanotube devices for strain and magnetic field sensing. Based upon these phenomena, electron beam lithography procedures have been developed to study the transport properties of purified HiPCO single walled carbon nanotubes for development into sensory materials for nondestructive evaluation. Purified nanotubes are dispersed in solvent suspension and then deposited on the device substrate before metallic contacts are defined and deposited through electron beam lithography. This procedure produces randomly dispersed ropes, typically 2 - 20 nm in diameter, of single walled carbon nanotubes. Transport and scanning probe microscopy studies have shown a good correlation between the junction resistance and tube density, alignment, and contact quality. In order to improve transport properties of the junctions a technique has been developed to align and concentrate nanotubes at specific locations on the substrate surface. Lithographic techniques are used to define local areas where high frequency electric fields are to be concentrated. Application of the fields while the substrate is exposed to nanotube-containing solution results in nanotube arrays aligned with the electric field lines. A second electron beam lithography layer is then used to deposit metallic contacts across the aligned tubes. Experimental measurements are presented showing the increased tube alignment and improvement in the transport properties of the junctions.

Wincheski, Buzz↗
NASA NTRS1998

Electronic Properties of Carbon Nanotubes and Junctions

Metallic and semiconducting Single Wall Carbon Nanotubes (CNT) have recently been characterized using scanning tunneling microscopy (STM) and the manipulation of individual CNT has been demonstrated. These developments make the prospect of using CNT as molecular wires and possibly as electronic devices an even more interesting one. We have been modeling various electronic properties such as the density of states and the transmission coefficient of CNT wires and junctions. These studies involve first calculating the stability of junctions using molecular dynamics simulations and then calculating the electronic properties using a pi-electron tight binding Hamiltonian. We have developed the expertise to calculate the electronic properties of both finite-sized CNT and CNT systems with semi-infinite boundary conditions. In this poster, we will present an overview of some of our results. The electronic application of CNT that is most promising at this time is their use as molecular wires. The conductance can however be greatly reduced because of reflection due to defects and contacts. We have modeled the transmission through CNT in the presence of two types of defects: weak uniform disorder and strong isolated scatterers. We find that the conductance is affected in significantly different manners due to these defects Junctions of CNT have also been imaged using STM. This makes it essential to derive rules for the formation of junctions between tubes of different chirality, study their relative energies and electronic properties. We have generalized the rules for connecting two different CNT and have calculated the transmission and density of states through CNT junctions. Metallic and semiconducting CNT can be joined to form a stable junction and their current versus voltage characteristics are asymmetric. CNT are deformed by the application of external forces including interactions with a substrate or other CNT. In many experiments, these deformation are expected to occur naturally. We will present some preliminary results of our calculations of the modification of CNT electronic properties as a result of deformations.

Anantram, M. P.↗
NASA NTRS2005

Evaluation of Power Electronic Components and Systems at Cryogenic Temperatures For Space Missions

Power electronic circuits and systems designed for deep space applications and outer planetary exploration are required to operate reliably and efficiently under extreme temperature conditions. This requirement is dictated by the fact that the operational environments associated with some of the space missions would encompass temperatures as low as -183 C. The development and utilization of electronics capable of low temperature operation would not only fulfill the advanced technology requirements, but also would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. These benefits are generally achieved by the improved intrinsic properties of some of the electronic materials at low temperature, reduced device losses, and the elimination of heating elements used in conventional systems at low temperatures. Power electronic circuits are widely used in space power systems in the areas of power management, conditioning, and control. In this work, the performance of certain power electronic components and systems was investigated under low temperature. These include inductors, capacitors, pulse-width-modulation (PWM) controllers, and advanced commercial DC/DC converter modules. Different properties were determined as a function of temperature in the range of 20 C to -140 C, at various current and voltages levels. The experimental procedures along with the experimental data obtained are presented and discussed in this paper.

Elbuluk, Malik E.↗