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NASA NTRS2007

MHD Flow Visualization of Magnetopause and Polar Cusps Vortices

Detailed analysis of Wind, Geotail, and Cluster data shows how magnetopause boundary and polar cusps vortices associated with high speed streams can be a carrier of energy flux to the Earth's magnetosphere. For our analysis time interval, March 29 . - April 5 2002, the Interplanetary Magnetic Field (IMF) is primarily northward and MHD simulations of vortices along the flanks within nine hours of the time interval suggest that a Kelvin Helmholtz (KH) instability is likely present. Vortices were classified by solar wind input provided by the Wind satellite located 70-80 RE upstream from Earth. We present statistics for a total of 304 vortices found near the ecliptic plane on the magnetopause flanks, 273 with northward IMF and 31 with southward IMF. The vortices generated under northward IMF were more driven into the dawnside than into the duskside, being substantially more ordered on the duskside. Most of the vortices were large in scale, up to 10 RE, and with a rotation axis closely aligned with the Z(sub GSE) direction. They rotated preferentially clockwise on the dawnside, and. counter-clockwise on the duskside. Those generated under southward IMF were less ordered, fewer in number, and also smaller in diameter. Significant vortex activity occurred on the nightside region of the magnetosphere for these southward cases in contrast to the northward IMF cases on which most of the activity was driven onto the magnetopause flanks. Magnetopause crossings seen by the Geotail spacecraft for the time interval were analyzed and compared with the MHD simulation to validate our results. Vortices over the polar cusps are also being analyzed and the simulation results will be compared to the multi-point measurements of the four Cluster satellites.

Collado-Vega, Y. M.↗

NASA NTRS1965

Carrier lifetime studies in high-energy electron irradiated silicon.

Dependence of lifetime on injected level in high- energy electron-irradiated silicon with production of total displacements per primary recoil event

CARRIER INJECTION↗

NASA NTRS2001

Theory and Simulation of Self- and Mutual-Diffusion of Carrier Density and Temperature in Semiconductor Lasers

Carrier diffusion and thermal conduction play a fundamental role in the operation of high-power, broad-area semiconductor lasers. Restricted geometry, high pumping level and dynamic instability lead to inhomogeneous spatial distribution of plasma density, temperature, as well as light field, due to strong light-matter interaction. Thus, modeling and simulation of such optoelectronic devices rely on detailed descriptions of carrier dynamics and energy transport in the system. A self-consistent description of lasing and heating in large-aperture, inhomogeneous edge- or surface-emitting lasers (VCSELs) require coupled diffusion equations for carrier density and temperature. In this paper, we derive such equations from the Boltzmann transport equation for the carrier distributions. The derived self- and mutual-diffusion coefficients are in general nonlinear functions of carrier density and temperature including many-body interactions. We study the effects of many-body interactions on these coefficients, as well as the nonlinearity of these coefficients for large-area VCSELs. The effects of mutual diffusions on carrier and temperature distributions in gain-guided VCSELs will be also presented.

Li, Jian-Zhong↗

NASA NTRS1993

Activation energy and capture cross section of majority carrier traps in Zn doped InP

Schottky barrier diodes were fabricated on Zn doped InP Wafers. The diodes were radiation damaged with 2 MeV protons to a dose of 2 x 10(exp 12)cm(sup -2). The damage was analyzed by DLTS (deep level transient spectroscopy) using the double correlation technique. Capture cross sections were measured directly. Two major defects were observed in the DLTS spectra. The first defect, was H4 at Ev + 0.29 eV, with capture cross section 1.1 x 10(exp -17)cm(sup 2). The second defect, was H5 at Ev + 0.53 eV. Its capture cross section varied with temperature as described by the relationship sigma = sigma(sub 0) exp(delta(E)/kT) where sigma(sub 0) = 1.3 x 10(exp -19)cm(sup 2) and delta(E) = .08 eV. This relationship yields a sigma of 5.9 x 10(exp -21)cm(sup 2) at room temperature. The surprisingly small capture cross section of H5 and its temperature dependence are discussed in terms of the multiphonon emission process for carrier capture at the defect. The advantages of the improved experimental techniques used are also discussed.

Rybicki, George↗

NASA NTRS1986

Effect of liquid droplets on turbulence in a round gaseous jet

The main objective of this investigation is to develop a two-equation turbulence model for dilute vaporizing sprays or in general for dispersed two-phase flows including the effects of phase changes. The model that accounts for the interaction between the two phases is based on rigorously derived equations for turbulence kinetic energy (K) and its dissipation rate epsilon of the carrier phase using the momentum equation of that phase. Closure is achieved by modeling the turbulent correlations, up to third order, in the equations of the mean motion, concentration of the vapor in the carrier phase, and the kinetic energy of turbulence and its dissipation rate for the carrier phase. The governing equations are presented in both the exact and the modeled formes. The governing equations are solved numerically using a finite-difference procedure to test the presented model for the flow of a turbulent axisymmetric gaseous jet laden with either evaporating liquid droplets or solid particles. The predictions include the distribution of the mean velocity, volume fractions of the different phases, concentration of the evaporated material in the carrier phase, turbulence intensity and shear stress of the carrier phase, droplet diameter distribution, and the jet spreading rate. The predictions are in good agreement with the experimental data.

Mostafa, A. A.↗

NASA NTRS1968

Relationship between electric field strength and helix pitch in induced cholesteric- nematic phase transitions.

Electric field strength and helix pitch in induced cholesteric-nematic phase transitions, noting activation energy for charge carrier production

Baessler, H.↗

NASA NTRS1977

Fundamental electronic mechanisms limiting the performance of solar cells

Attention is focused on distortion in the energy band, and carrier recombination and generation rates (lifetimes), as the two dominant mechanisms. Spatial dependences associated with these two mechanisms, in the direction normal to the surface illuminated by the sun and in the direction tangential to that surface, are also emphasized as crucial factors in governing the efficiency of solar cells. Electronic parameters for the set of differential equations characterizing transport, recombination, and generation of carriers, and interband and band-bound transition rates, are studied.

Lindholm, F. A.↗

NASA NTRS1979

Auroral origin of medium scale gravity waves in neutral composition and temperature

The kinetic temperature and neutral composition data obtained from the Aeros B neutral atmosphere temperature experiment and the neutral and ion mass spectrometer show spatial structures characteristic of medium scale gravity waves with a wavelength in the range of several hundred kilometers. These waves are associated with auroral activity, and their spatial structure reflects the time history of the auroral electrojet. The medium scale gravity waves tend to propagate to mid-latitudes on the nightside. On the dayside their range is limited to high latitudes. Gravity waves are carriers of auroral energy to middle and low latitudes where they may cause irreversible changes in temperature via viscous dissipation. Since auroral activity occurs frequently, it is suggested that this energy reaches the mid-latitude region of the thermosphere much more frequently than is indicated by planetary magnetic indices.

Chandra, S.↗

NASA NTRS1983

A two-equation turbulence model for two-phase flows

A two-equation turbulence model has been developed for predicting two-phase flows. The two equations describe the conservation of turbulence kinetic energy and dissipation rate of that energy for the carrier fluid in a two-phase flow. They have been derived rigorously from the momentum equations of the carrier fluid. Closure of the time-mean equations is achieved by modeling the turbulent correlations up to third order. The new model eliminates the need to simulate in an ad hoc manner the effects of the dispersed phase on turbulence structure. Preliminary testing indicates that the model is successful in predicting the main features of a round gaseous jet laden with uniform-size solid particles.

Elghobashi, S. E.↗

NASA NTRS1982

Electrical characterization of Hg(1-x)Cd(x)Te alloys

Theoretical models are described for calculations of charge-carrier concentrations, Fermi energy, and conduction electron mobility as functions of x, temperature, and ionized and neutral defect concentrations of Hg(1-x)Cd(x)Te alloys. Measurements are reported of electron concentration and electron mobility from 5-300 K for alloys with x values of between 0.17 and 0.30. The electrical data are in reasonable agreement with theory, and were analyzed to obtain estimates of donor and acceptor state concentrations. The electron mobilities are calculated in terms of a microscopic theory of electrical conduction derived from the solution of the Boltzmann equation for the perturbed steady-state electron distribution function, and they show that longitudinal optical-phonon and charged and neutral defect scattering are the dominant mobility-limiting mechanisms.

Lehoczky, S. L.↗

NASA NTRS1984

The discharge mechanism of the high-temperature arc

The mechanism of the high temperature Ar arc is interpreted considering those essential points in which it deviates from the known arcs based on earlier measurements and experiments. The following points are discussed individually: the charge carrier balance, the energy balance, the volt amp characteristics, and the difference between high temperature arcs in Ar and N. Besides the volt amp characteristic of a 10 mm long arc in Ar between 10 and 200 amp, the anode fall, cathode fall, and arc gradient were obtained with the aid of probes. The difference between Ar and N arcs are attributed to variations of the heat conditions and electrical conditions at different temperatures of the gas.

Busz-Peuckert, G.↗

NASA NTRS1990

A model for the spectral dependence of optically induced absorption in amorphous silicon

A model based on transitions from localized band tail states to states above the mobility edge is used to explain the broad band induced absorptions observed in recent pump-probe experiments. The model gives the observed decrease of absorption with frequency at subband gap photo energies and high carrier densities (of about 10 to the 20th/cu cm). At lower carrier densities, the absorption has a maximun which is sensitive to the spatial extent of the band tail states.

Lawandy, N. M.↗

NASA NTRS1997

Electrodeposited CuInSe2 Thin Film Junctions

We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

Raffaelle, R. P.↗

NASA NTRS1998

Electrodeposited CulnSe2 Thin Film Junctions

Raffaelle, R. P.↗

NASA NTRS1971

Radiation damage annealing kinetics

Various spectral response studies are reported that assess lithium doping effects on the recovery process of electron damaged silicon solar cells. Measurements of both the minority carrier lifetimes and the energy level spectrum of the defects are used to predict lifetime damage constants and carrier removal rates relevant to the operation of the solar lithium-doped cell and its annealing kinetics.

Dresselhaus, M. S.↗

NASA NTRS1979

Bandgap narrowing in moderately to heavily doped silicon

A theoretical model of bandgap narrowing in silicon at high doping levels has been developed. The model takes into account the electrostatic energy of interaction between a minority carrier and the majority carriers surrounding it, which reduces the thermal energy necessary for creation of an electron-hole pair. A pair energy similar to the excitonic binding energy of bound electron-hole pairs in insulators is obtained. Theoretical results are in excellent agreement with experimental results in the doping range from 3 times 10 to the 17th to 1.5 times 10 to the 20th/cu cm at room temperature. These results indicate that at high injection levels such as a transistor biased into the conductivity-modulation regime or a solar cell whose surface is established by ion implantation into an oxide layer, the bandgap narrowing is determined by the injected carrier concentration rather than by the doping level.

Lanyon, H. P. D.↗

NASA NTRS1984

Uncertainties about the physical electronics of n(+) and p(+) silicon, with applications for solar cells

After brief surveys of the significance of n(+) and p(+) silicon for the conversion efficiency of solar cells, the work in this paper is concentrated on uncertainties in the characterization of n(+) and p(+) regions. The topics treated include the quantum density states of the majority carrier band and the position of the Fermi level relative to the edge of this band, the resulting force field on the minority carriers accompanying a space dependence of the energy gap narrowing, and the interpretation of measurements of the energy gap narrowing and the minority carrier diffusivity and mobility. The treatment seeks to show how these uncertainties relate to solar cell design and to estimates of attainable conversion efficiency.

Lindholm, F. A.↗

NASA NTRS1982

Parallel-processing with surface plasmons, a new strategy for converting the broad solar spectrum

A new strategy for efficient solar-energy conversion is based on parallel processing with surface plasmons: guided electromagnetic waves supported on thin films of common metals like aluminum or silver. The approach is unique in identifying a broadband carrier with suitable range for energy transport and an inelastic tunneling process which can be used to extract more energy from the more energetic carriers without requiring different materials for each frequency band. The aim is to overcome the fundamental 56-percent loss associated with mismatch between the broad solar spectrum and the monoenergetic conduction electrons used to transport energy in conventional silicon solar cells. This paper presents a qualitative discussion of the unknowns and barrier problems, including ideas for coupling surface plasmons into the tunnels, a step which has been the weak link in the efficiency chain.

Anderson, L. M.↗