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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Emulating 2D Materials with Magnons

Spin waves (magnons) in two-dimensional (2D) materials have received increasing interest due to their unique states and potential for tunability. However, many interesting features of these systems, including Dirac points and topological states, occur at high frequencies, where experimental probes are limited. Here, we study a crystal formed by patterning a hexagonal array of holes in a perpendicularly magnetized thin film. Through simulation, we find that the magnonic band structure imitates that of graphene, but additionally has some kagomelike character and includes a few flat bands. Surprisingly, its nature can be understood using a nine-band tight-binding Hamiltonian. This clear analogy to 2D materials enables band-gap engineering in 2D, topological magnons along 1D phase boundaries, and spectrally isolated modes at 0D point defects. Interestingly, the 1D phase boundaries allow access to the valley degree of freedom through a magnonic analog of the quantum valley Hall insulator. These approaches can be extended to other magnonic systems, but are potentially more general due to the simplicity of the model, which resembles existing results from electron, phonon, photon, and cold-atom systems. This finding brings the physics of spin waves in 2D materials to more experimentally accessible scales, augments it, and outlines a few principles for controlling magnonic states.

Ferrimagnets↗
DOE OSTI2023

Search for High-Pressure Silicon Phases: Reaching the Extreme Conditions with High-Intensity Laser Irradiation

Controlling electronic and optical properties of semiconducting materials could substantially expand their functionality and enable new pathways for the formation of ‘smart’ materials for emerging innovative applications. An emerging new path for the synthesis of exotic silicon (Si) polymorphs is irradiation of bulk diamond-cubic Si by ultrashort laser pulses at relativistic intensity above 1019 W/cm2. Exotic polymorphs are formed due to interaction with MeV-energy electrons generated in laser-produced high-temperature plasma state. The unusual Si structures are found in the form of 5–10 nm nanoparticles confined deep in the bulk of 500-μm-thick Si samples. Raman spectroscopy, electron microscopy and X-ray diffraction studies provide an unequivocal evidence of exotic Si phase formation. A key advantage of such relativistic irradiation lies thereby in the fact that large quantities of such exotic Si is synthesised embedded within the bulk diamond-cubic Si and that further the formed Si polymorphs are stable at ambient temperature and pressure. They are thus available for further studies for electronic applications in selective band gap engineering.

Rapp, Ludovic↗
DOE OSTI2022

Topological alloy engineering and locally linearized gap dependence on concentration

Alloy engineering is a well-established approach to tune various materials’ properties, but its application to topological alloys remains rudimentary. Of special interest is the band gap, the most defining property of topological materials; however, the concentration dependence of energy gaps in topological alloys remains unknown. Here we systematically investigate the band gap evolution of a topological alloy as a function of alloy concentration, using KZnSb 1-x Bi x as a prototype, based on first-principles calculations. In contrast to the well-established smooth bowing curve for a trivial gap in semiconductor alloys, we found that the topological gap evolves generally with a complex fragmented pattern due to topological phase transitions, and most strikingly a linear dependence on concentration locally in each distinct phase. Such gap linearization is fundamentally rooted in the linear dependence on alloy concentration of spin-orbit coupling (SOC) that predominantly determines a topological gap. Furthermore, we demonstrate topological alloy engineering as a general approach to tune the topological order by modulating the band edge composition and degeneracy through the alloying-induced interplay of SOC and atomic orbital on-site energy, while the linear gap dependence on alloy concentration remains independent of the degree of topological order.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Floquet engineering of tilted and gapped Dirac bandstructure in 1T$$^\prime$$-MoS$$_2$$

Abstract We have developed a rigorous theoretical formalism for Floquet engineering, investigating, and subsequently tailoring most crucial electronic properties of 1T $$^\prime$$ ′ -MoS $$_2$$ 2 by applying an external high-frequency dressing field within the off-resonance regime. It was recently demonstrated that monolayer semiconducting 1T $$^\prime$$ ′ -MoS $$_2$$ 2 exhibits tunable and gapped spin- and valley-polarized tilted Dirac bands. The electron-photon dressed states depend strongly on the polarization of the applied irradiation and reflect a full complexity of the low-energy Hamiltonian for non-irradiated material. We have calculated and analyzed the properties of the electron dressed states corresponding to linear and circular polarization of a dressing field by focusing on their symmetry, anisotropy, tilting, direct and indirect band gaps. Circularly polarized dressing field is known for transition into a new electronic state with broken time-reversal symmetry and a non-zero Chern number, and therefore, the combination of these topologically non-trivial phases and transitions between them could reveal some truly unique and previously unknown phenomena and applications. We have also computed and discussed the density of states for various types of 1T $$^\prime$$ ′ -MoS $$_2$$ 2 materials and its modification in the presence of a dressing field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Engineering Small HOMO–LUMO Gaps in Polycyclic Aromatic Hydrocarbons with Topologically Protected States

Topological phases in laterally confined low-dimensional nanographenes have emerged as versatile design tools that can imbue otherwise unremarkable materials with exotic band structures ranging from topological semiconductors and quantum dots to intrinsically metallic bands. The periodic boundary conditions that define the topology of a given lattice have thus far prevented the translation of this technology to the quasi-zero-dimensional (0D) domain of small molecular structures. Here, we describe the synthesis of a polycyclic aromatic hydrocarbon (PAH) featuring two localized zero modes (ZMs) formed by the topological junction interface between a trivial and nontrivial phase within a single molecule. First-principles density functional theory calculations predict a strong hybridization between adjacent ZMs that gives rise to an exceptionally small HOMO–LUMO gap. Scanning tunneling microscopy and spectroscopy corroborate the molecular structure of 9/7/9-double quantum dots and reveal an experimental quasiparticle gap of 0.16 eV, corresponding to a carbon-based small molecule long-wavelength infrared (LWIR) absorber.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Emergent Above-Gap Photoluminescence in Molecularly Engineered Hybrid Bilayer Crystals

Bilayer crystals, built by stacking two-dimensional (2D) covalent monolayers, give rise to coupled excitonic states whose properties are constrained by fixed lattice symmetry and orientation. Replacing one covalent monolayer with a 2D molecular crystal––held together by non-covalent forces––overcomes this limitation, as molecular functional groups afford tunable in-plane lattice geometry, intermolecular spacing, and interlayer coupling, providing a powerful knob for exciton engineering. Here, in this study, we report four-atom-thick hybrid bilayer crystals (HBCs) synthesized by directly growing single-crystalline PDI molecular crystal atop WS 2 monolayers, which exhibit a robust photoluminescence (PL) peak 120 meV above the WS 2 optical band gap alongside a belowgap emission. Both peaks display strong polarization anisotropy—nearing unity for the above-gap emission—and maintain a perfectly linear power-law dependence up to an excitation density of ~10 7 mW/cm 2 , indicative of coexisting localized and delocalized excitonic states. Substituting PDI with a PTCDA monolayer on WS 2 fully quenches PL, demonstrating molecular control over excitonic emission. Lattice scale ab initio GW and GW-BSE calculations reveal a significantly hybridized bilayer band structure in PDI/WS 2 that supports interlayer excitonic species both above and below the WS 2 gap with strong polarization anisotropy, in excellent agreement with experiment. Our work introduces a molecule-based bilayer platform for the bottom-up design and control of excitonic phenomena in atomically thin optoelectronic and quantum materials.

2D materials↗
DOE OSTI2024

Heterostructural interface engineering for ultrawide-gap nitrides from first principles: Ta C / Al N and Ta C / Ga N rocksalt-wurtzite interfaces

Epitaxial lattice matching is an important condition for the formation of coherent interfaces with low defect densities. However, lattice-matched substrates with the same crystal structure as the active layer are often not available, suggesting opportunities for utilizing heterostructural interfaces. For example, at high Al contents that are interesting for ultrawide-gap applications in power electronics, Al x ⁢Ga 1-x ⁢N semiconductor alloys in the (0001) orientation of the wurtzite (wz) structure become lattice-matched to (111)-oriented rocksalt (rs) Ta⁢C substrates. To predict the expected interface atomic structures under different synthesis conditions, we perform high-throughput density-functional-theory calculations, using an algorithm for systematic sampling of the possible stacking sequences of the atomic layers on the in-plane hexagonal lattice. The approach considers octahedral, tetrahedral, and prismatic coordination motifs, and is generally applicable for the modeling of commensurate rs/wz heterostructural interfaces. Our results provide guidance for synthesis control of substrate-film bonding and the polarity of ultrawide-gap Al x⁢ Ga 1-x⁢ N alloys on Ta⁢C substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures

Extensive research efforts of strained germanium (Ge) are currently underway due to its unique properties, namely, (i) possibility of band gap and strain engineering to achieve a direct band gap, thus exhibiting superior radiative properties, and (ii) higher electron and hole mobilities than Si for upcoming technology nodes. Realizing lasing structures is vital to leveraging the benefits of tensile-strained Ge (ε-Ge). Here, we use a combination of different analytical tools to elucidate the effect of the underlying InGaAs/InAlAs and InGaAs overlaying heterostructures on the material quality and strain state of ε-Ge grown by molecular beam epitaxy. Using X-ray analysis, we show the constancy of tensile strain in sub-50 nm ε-Ge in a quantum-well (QW) heterostructure. Further, effective carrier lifetime using photoconductive decay as a function of buffer type exhibited a high (low) defect-limited carrier lifetime of ~68 ns (~13 ns) in 0.61% (0.66%) ε-Ge grown on an InGaAs (InAlAs) buffer. These results correspond well with the measured surface roughness of 1.289 nm (6.303 nm), consistent with the surface effect of the ε-Ge/III–V heterointerface. Furthermore, a reasonably high effective lifetime of ~78 ns is demonstrated in a QW of ~30 nm 1.6% ε-Ge, a moderate reduction from ~99 ns in uncapped ε-Ge, alluding to the surface effect of the overlying heterointerface. Thus, the above results highlight the prime quality of ε-Ge that can be achieved via III–V heteroepitaxy and paves a path for integrated Ge photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A Comprehensive Review of Permanent Magnet Transverse Flux Machines: Use in Direct-Drive Applications

The use of direct-drive machines in renewable and industrial applications is increasing at a rapid rate. Transverse flux machines (TFMs) are ideally suited for direct-drive applications due to their high torque density. This article presents a comprehensive review of permanent magnet (PM) TFMs for direct-drive applications. It introduces TFMs and their operating principle and reviews the different types of TFMs proposed in the literature. TFMs are categorized by the number of stator sides, types of stator cores, and magnet arrangement in the rotor. The review covers different design topologies, materials used for manufacturing, structural and thermal analyses, modeling, design optimization, and cogging torque minimization in TFMs. The article also examines various applications and comparisons for TFMs presented in the literature.

air gaps↗
DOE OSTI2025

CIE Curriculum Guide (V.2.0)

The Cyber-Informed Engineering (CIE) Curriculum Guide offers a comprehensive framework, guidance, and resources for integrating CIE into university-level engineering programs and related educational activities. The primary goal is to help educators adopt CIE principles into their teaching to produce future engineers and technicians who understand digital risks in modern engineered systems, thereby addressing the nation’s infrastructure resilience needs. This guide outlines practical integration examples, links to resources to accelerate CIE adoption, and shares insights from partner academic institutions on various implementation strategies. CIE is a framework for embedding engineered controls that mitigate the impact of cyber-attacks in any cyber-physical system used in critical energy infrastructure and other sectors. Developed by the U.S. Department of Energy’s Office of Cybersecurity, Energy Security, and Emergency Response (CESER), the National Cyber-Informed Engineering Strategy emphasizes embedding CIE into formal education, training, and credentialing. This guide supports this strategic objective by providing examples of integrating CIE concepts into engineering curricula, from class activities to new courses and certificate programs. The importance of educating cyber-informed engineers is underscored by the evolving cybersecurity threats facing engineered systems. As industrial control systems (ICS) increasingly incorporate digital technologies, the responsibility for security extends to both cyber professionals and engineers. CIE addresses critical gaps in designing and protecting physical systems with digital components against cyber risks, ensuring engineers consider digital risk throughout the engineering design lifecycle. Currently, engineering education does not routinely include cyber-informed principles, highlighting a gap in addressing modern engineering system risks. This guide advocates for updating engineering curricula to include digital risk management as a fundamental element. By doing so, future engineers will be equipped to design resilient systems that mitigate digital risks from the outset. Through this guide, engineering faculty can integrate CIE into their curricula, bridging the gap between digital risk and engineering. This approach prepares a cyber-informed workforce capable of safeguarding the cyber-physical systems crucial to national security and public welfare. By embedding CIE into education and training, institutions can produce engineers and technicians who can effectively mitigate cyber impacts throughout the engineering design lifecycle, resulting in more secure critical infrastructures.

42 - ENGINEERING↗
DOE OSTI2023

Plasma-Coupled Flow Reactor Studies of Low-Temperature Plasma Assisted Kinetics of Methanol Blended with CO2

Ignition technologies based on low-temperature plasmas (LTP) have the potential to operate next generation engines at elevated pressures and increased dilution limits promoting higher efficiencies. From a practical standpoint, research on LTP igniters has shown to enhance combustion and ignition, improve flame stability, and extend the dilution limits of combustion. All of the aforementioned gains are complemented with higher ignition efficiencies. However, the biggest challenge with incorporating this technology into engines is the knowledge gap of how exactly plasma chemistry effects can enhance the basic combustion phenomena. This coupled with the lack of validated kinetic mechanisms for plasma-combustion chemistry is the biggest obstruction to recognize efficient ignition, especially for application relevant fuels and biofuels. In order to comprehensively evaluate the effects of LTP on an oxygenated fuel specific system, this present study examines the kinetics of methanol plasma-assisted pyrolysis and oxidation using a custom-built plasma flow reactor (PFR). Experimental regimes are also further extended to understand the effects of adding CO2 to the mixture and its consequence on reaction kinetics. The PFR is installed with a dielectric-barrier discharge (DBD) configuration to induce LTP into the fuel mixture. Non-equilibrium plasmas are generated by high-voltage pulses (nearing 20 KV) administered by a plasma pulser at high-pulse repetition rates (up to 10 kHz). In order to better understand and isolate plasma chemistry and its effect on neutral chemistry, the experiments were carried out by heavily diluting reactive mixtures in nitrogen at near isothermal conditions. This suppresses the effect of exothermic reactions on chemistry allowing stable intermediates and products to be detected and quantified using ex-situ GC/MS diagnostic methods. Experiments were carried out at 0.5 atm pressure and over a wide range of temperatures from 523 K to 1203 K. Experimental results depicted the enhancement in intermediates production as well as overall lower temperatures required for complete fuel consumption in the plasma specific cases as opposed to their pure thermal counterpart. Formation of oxygenated and nitrile compounds specific to plasma assisted pyrolysis cases illustrated the efficacy of LTP to introduce new reaction pathways accelerating fuel decomposition. Increase in reactivity at lower temperatures is sought to be an effect induced by plasma chemistry postulating the acceleration in intermediates production. The onset of thermal ignition in plasma assisted oxidation is seen 200 K earlier than thermal oxidation highlighting efficient fuel conversion to final byproducts. Enhanced collisional processes afforded by LTP is seen to perturb reaction pathways between oxygenated fuel radicals and N-atoms to alter overall chemical reactivity. New insights into kinetics are gained from this study highlighting governing plasma assisted combustion (PAC) pathways for oxygenated fuel reaction chemistry. The results from this study can be used to develop future mechanisms specific to plasma chemistry which can bridge the mechanistic knowledge gap for LTP ignition so that future engines can adopt LTPs in their design for efficient combustion.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Mechanistic origins of excitonic properties in 2D perovskites: Implications for exciton engineering

As the field of 2D halide perovskites (HPs) matures, state-of-the-art techniques to measure important properties, such as the band gap (E g ) and exciton binding energy (E b ), continue to produce inconsistent values. Here, we tackle this long-standing problem by obtaining direct measurements of E g and E b for 31 unique HP structures. The E b values are lower than in previous literature reports and lower than expected from standard theory that assumes excitons are screened by optical-frequency dielectric constants. These low E b values are shown to be a consequence of unique screening effects, such as superlattice screening and phonon screening. Here, we find a strikingly strong correlation between E b and E g and provide design principles to a priori tune E g and E b to their optimal values. As such, this work offers a blueprint for E g -E b engineering of low-dimensional semiconductors as an even more useful replacement for simply band-gap engineering.

14 SOLAR ENERGY↗
DOE OSTI2023

g-factor engineering with InAsSb alloys toward zero band gap limit

Band gap is known as an effective parameter for tuning the Landé g factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large g factor of g≈-90 at the minimum band gap of ~0.1 eV, which is almost twice that in bulk InSb, is found. Further analysis to the zero gap limit reveals a possible gigantic g factor of g≈-200 with a peculiar relativistic Zeeman effect that disperses as the square root of magnetic field. Such a g-factor enhancement toward the narrow gap limit cannot be quantitatively described by the conventional Roth formula, as the orbital interaction effect between the nearly triply degenerated bands becomes the dominant source for the Zeeman splitting. These results may provide insights into realizing large g factors and spin-polarized states in semiconductors and topological materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Bandgap engineering of SrZrS 3 chalcogenide perovskite via substitutional doping for photovoltaic applications: a first-principles DFT study

Strontium zirconium sulfide (SrZrS 3 ) has garnered significant attention for photovoltaic (PV) applications due to its excellent optoelectronic properties, high chemical and moisture stability, and non-toxicity. However, the bandgaps of both the α- and β-phases lie outside the optimum ranges for both single-junction solar cells (SJSCs) and tandem solar cells (TSCs), thereby limiting their applications in PV technologies. In this study, we employed hybrid density functional theory to engineer the band gaps of α- and β-SrZrS 3 through substitutional doping. We considered three dopants (Hf, Sn, and Ti) at the Zr site of SrZrS 3 with varying doping concentrations and investigated their effects on the structural, electronic, and optical properties of the materials. We found that Sn and Ti doping effectively lowers the band gaps of both α- and β-SrZrS 3 , whereas Hf doping increases them. For x values up to 0.25, the band gaps of the α-SrZr 1−x Sn x S 3 and α-SrZr 1−x Ti x S 3 are within the optimum range for SJSCs, and those of β-SrZr 1−x Sn x S 3 and β-SrZr 1−x Ti x S 3 lie within the optimum range for Si/perovskite as well as perovskite/perovskite TSCs. The three dopants exhibited significant effects on the optical properties of both α- and β-SrZrS 3 , including the absorption coefficient, energy-loss functions, reflectivity, and refractivity spectra. Thermodynamic stability analysis revealed that for both phases, SrZr 1−x Hf x S 3 can be synthesized via exothermic processes, whereas the formation of SrZr 1−x Ti x S 3 and SrZr1−xSn x S 3 is endothermic and hence, not thermodynamically favorable. Further analysis showed that SrZr 1−x Ti x S 3 in both α- and β-phases are stable under thermodynamic equilibrium conditions, whereas SrZr 1−x Sn x S 3 is prone to dissociation into ternary phases (SrZrS 3 and SrSnS 3 ), especially at higher doping concentrations. These results show that Ti doping is effective in tuning the band gaps of α- and β-SrZrS 3 toward the optimal values for PV applications.

14 SOLAR ENERGY↗
DOE OSTI2026

First-principles theory of direct-gap optical emission in hexagonal Ge and its enhancement via strain engineering

The emergence of hexagonal Ge (2H-Ge) as a candidate direct-gap group-IV semiconductor for Si photonics mandates a rigorous understanding of its optoelectronic properties. Theoretical predictions of a “pseudodirect” band gap, characterized by weak oscillator strength, contrast with a claimed high radiative recombination coefficient 𝐵 comparable to conventional (cubic) InAs. We compute 𝐵 in 2H-Ge from first principles and quantify its dependence on temperature, carrier density, and strain. For unstrained 2H-Ge, our calculated spontaneous emission spectra corroborate that measured photoluminescence corresponds to direct-gap emission, but with 𝐵 being approximately three orders of magnitude lower than in InAs. We confirm a pseudodirect-to-direct-gap transition under ∼2% [0001] uniaxial tension, which can enhance 𝐵 by up to 3 orders of magnitude, making it comparable to that of InAs. Beyond quantifying the strong enhancement of 𝐵 via strain engineering, our analysis suggests the dominance of additional, as-yet unquantified recombination mechanisms in this nascent material.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Bottom‐Up Synthesized Nanoporous Graphene Transistors

Abstract Nanoporous graphene (NPG) can exhibit a uniform electronic band gap and rationally‐engineered emergent electronic properties, promising for electronic devices such as field‐effect transistors (FETs), when synthesized with atomic precision. Bottom‐up, on‐surface synthetic approaches developed for graphene nanoribbons (GNRs) now provide the necessary atomic precision in NPG formation to access these desirable properties. However, the potential of bottom‐up synthesized NPG for electronic devices has remained largely unexplored to date. Here, FETs based on bottom‐up synthesized chevron‐type NPG (C‐NPG), consisting of ordered arrays of nanopores defined by laterally connected chevron GNRs, are demonstrated. C‐NPG FETs show excellent switching performance with on–off ratios exceeding 10 4 , which are tightly linked to the structural quality of C‐NPG. The devices operate as p‐type transistors in the air, while n‐type transport is observed when measured under vacuum, which is associated with reversible adsorption of gases or moisture. Theoretical analysis of charge transport in C‐NPG is also performed through electronic structure and transport calculations, which reveal strong conductance anisotropy effects in C‐NPG. The present study provides important insights into the design of high‐performance graphene‐based electronic devices where ballistic conductance and conduction anisotropy are achieved, which could be used in logic applications, and ultra‐sensitive sensors for chemical or biological detection.

Mutlu, Zafer↗
DOE OSTI2020

Refractive Imaging of Air Shock Above Microscale Defects in Pentaerythritol Tetranitrate (PETN) Films

Physical vapor deposition (PVD) of high explosives can produce energetic samples with unique microstructure and morphology compared to traditional powder processing techniques, but challenges may exist in fabricating explosive films without defects. Deposition conditions and substrate material may promote microcracking and other defects in the explosive films. Here, we investigate effects of engineered microscale defects (gaps) on detonation propagation and failure for pentaerythritol tetranitrate (PETN) films using ultra-high-speed refractive imaging and hydrocode modelling. Observations of the air shock above the gap reveal significant instabilities during gap crossing and re-ignition.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Innovative Method for Reliable Measurement of PEM Water Electrolyzer Component Resistances

Understanding the sheet resistance of porous electrodes is essential for improving the performance of polymer electrolyte membrane (PEM) water electrolyzers and related technologies. Despite its importance, existing methods often fail to provide reliable and comprehensive data, especially for porous materials with complex morphologies and non‐uniform thicknesses. This study introduces a robust and straightforward method for determining the sheet resistance of porous electrodes using a novel probe concept based on industrial printed circuit board (PCB) technology. This probe measures resistance across ten distances, ranging from 250 µm to 2500 µm, enabling local mapping of resistance. The study focuses on the sheet resistance of key components in PEM water electrolyzers, including the gas diffusion layer (GDL), porous transport layer (PTL), and catalyst layers deposited on a membrane. Additionally, an image‐processing‐based method is presented to obtain the thickness distribution of the studied catalyst layers, facilitating a detailed analysis of the electrical in‐plane resistivity with thickness variations. Overall, this methodology has the potential to expedite material integration and bridge the gap between electrode engineering and single‐cell testing, thereby advancing the development of PEM water electrolyzers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗