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At least 37 records · Page 2

Erbium-implanted materials for quantum communication applications

Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er 3+ ions are limited by currently available host materials, motivating the development of new Er 3+ -containing materials. Here we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er 3+ introduced via implantation and via doping during growth. Here, we demonstrate that implantation can generate a range of local environments for Er 3+ , including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing.

74 ATOMIC AND MOLECULAR PHYSICS↗

Distinguishing erbium dopants in Y 2 O 3 by site symmetry: Ab initio theory of two spin-photon interfaces

Here, we present a first-principles study of the defect formation and electronic structure of erbium (Er)–doped yttria (Y 2 O 3 ). This is an emerging material for spin-photon interfaces in quantum information science due to the narrow-linewidth optical emission from Er dopants at standard telecommunication wavelengths and their potential for quantum memories and transducers. We calculate formation energies of neutral and negatively and positively charged Er dopants and find the charge-neutral configuration to be the most stable, consistent with experiment. Of the two substitutional sites of Er for Y, the C 2 (more relevant for quantum memories) and C 3i (more relevant for quantum transduction), we identify the former as possessing the lowest formation energy. The electronic properties are calculated using the Perdew-Burke-Ernzerhof functional along with the Hubbard U parameter and spin-orbit coupling, which yields a ~ 6 μ B orbital and a ~ 3 μ B spin magnetic moment, and 11 electrons in the Er 4 f shell, confirming the formation of charge-neutral Er 3+ . This standard density functional theory approach underestimates the band gap of the host and lacks a first-principles justification for U . To overcome these issues we performed screened hybrid functional calculations, including a negative U for the 4 f orbitals, with mixing (α) and screening (w) parameters. These produced robust electronic features with slight modifications in the band gap and the 4 f splittings depending on the choice of tuning parameters. We also computed the many-particle electronic excitation energies and compared them with experimental values from photoluminescence.

36 MATERIALS SCIENCE↗

Spectroscopy of Rydberg states in erbium using electromagnetically induced transparency

We present a study of the Rydberg spectrum in 166 Er for series connected to the 4 f 12 ( 3 H 6 )6s, J c = 13/2 and J c = 11/2 ionic core states using an all-optical detection based on electromagnetically induced transparency in an effusive atomic beam. Identifying approximately 550 individual states, we find good agreement with a multi-channel quantum defect theory (MQDT) which allows assignment of most states to ns or nd Rydberg series. We provide an improved accuracy for the lowest two ionization thresholds to E IP, J c =13/2 = 49260:750(1) cm -1 and E IP, J c =11/2 = 49701:184(1) cm -1 as well as the corresponding quantum defects for all observed series. We identify Rydberg states in five different isotopes, and states between the two lowest ionization thresholds. Our results open the way for future applications of Rydberg states for quantum simulation using erbium and exploiting its special open-shell structure.

74 ATOMIC AND MOLECULAR PHYSICS↗

Erbium quantum memory platform with long optical coherence via back-end-of-line deposition on foundry-fabricated photonics

Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of titanium dioxide (Ti⁢O 2 ) doped with erbium (Er) onto silicon nitride nanophotonic waveguides and studied Er optical coherence at subkelvin temperatures with photon echo techniques. Furthermore, we suppressed optical dephasing through ex-situ oxygen annealing and optimized measurement conditions, which yielded an optical coherence time of 64 μ⁢s (a 5-kHz homogeneous linewidth) and slow spectral diffusion of 27 kHz over 4 ms, results that are comparable to state-of-the-art Er nanophotonic devices. Combined with second-long electron spin lifetimes and demonstrated electrical control of Er emission, our findings establish Er:Ti⁢O 2 on foundry photonics as a manufacturable platform for ensemble and single-ion quantum memories.

Electro-optic effects↗

Preliminary Result from the Dissolution of Neodymium and Erbium Oxide in a Tributyl Phosphate Solvent

This work demonstrated that visible absorbance spectroscopy can track the dissolution of neodymium and erbium oxide in an organic solution containing tributyl phosphate and nitrates. The formation of an aqueous phase was unexpected but an important phenomenon to consider when developing a metal oxide dissolution in organic solution flowsheet. Since the metal oxide appeared to completely dissolve into either the organic or newly formed aqueous phase, dissolution (extraction) rates should be easier to determine.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Atomic Manipulation of Single Erbium on GaAs(110): From Adatom Motion to Creation and Control of Bistable Substitutions

We demonstrate atomic-scale control over the position and configuration of single erbium (Er) atoms at the GaAs(110) surface using scanning tunneling microscopy (STM). By applying voltage pulses from the STM tip, we drive Er adatoms to move sequentially among three distinct adsorption sites and controllably substitute into Ga lattice sites. The resulting substitutional Er atoms exhibit two isoelectronic configurations that differ by less than one angstrom in lateral position and can be reversibly switched by additional voltage pulses. Differential conductance spectroscopy shows differences in the unoccupied local electronic states for the two substitutional configurations, and an absence of mid-gap states. Preliminary density functional theory (DFT) calculations support these findings, identifying the most stable adsorption and substitutional sites, their relative binding energies, charge states, and local density of states (LDOS) characteristics. Together, the experimental and theoretical results establish a method for precise, reversible manipulation of rare-earth dopants at semiconductor surfaces, opening a pathway to engineer atomic-scale quantum and optoelectronic functionalities.

Poche, Steven [Ohio State University]↗

Erbium-doped fiber amplifier elements for structural analysis sensors

The use of erbium-doped fiber amplifiers (EDFA's) in optical fiber sensor systems for structural analysis is described. EDFA's were developed for primary applications as periodic regenerator amplifiers in long-distance fiber-based communication systems. Their in-line amplification performance also makes them attractive for optical fiber sensor systems which require long effective lengths or the synthesis of special length-dependent signal processing functions. Sensor geometries incorporating EDFA's in recirculating and multiple loop sensors are discussed. Noise and polarization birefringence are also considered, and the experimental development of system components is discussed.

Hanna-Hawver, P.↗

Giant Pulse Phenomena in a High Gain Erbium Doped Fiber Amplifier

High gain Erbium Doped Fiber Amplifiers (EDFAs) are vulnerable to optical damage when unseeded, e.g. due to nonlinear effects that produce random, spontaneous Q-switched (SQS) pulses with high peak power, i.e. giant pulses. Giant pulses can damage either the components within a high gain EDFA or external components and systems coupled to the EDFA. We explore the conditions under which a reflective, polarization-maintaining (PM), core-pumped high gain EDFA generates giant pulses, provide details on the evolution of normal pulses into giant pulses, and provide results on the transient effects of giant pulses on an amplifier's fused-fiber couplers, an effect which we call Fiber Overload Induced Leakage (FOIL). While FOIL's effect on fused-fiber couplers is temporary, its damage to forward pump lasers in a high gain EDFA can be permanent.

Li, Stephen X.↗

Giant Pulse Phenomena in a High Gain Erbium Doped Fiber Amplifier

High gain Erbium Doped Fiber Amplifiers (EDFAs), while revolutionizing optical communications, remain vulnerable to optical damage when unseeded, e.g. due to nonlinear effects that produce random pulses with high peak power, i.e. giant pulses. Giant pulses can damage the components in a high gain EDFA or external components and systems coupled to the EDFA. We explore the conditions under which a reflective, polarization-maintaining (PM), core-pumped high gain EDFA generates giant pulses, provide details on conditions under which normal pulses evolve into giant pulses, and provide results on the transient effects of giant pulses on amplifier's fused-fiber couplers, an effect which we call Fiber Overload Induced Leakage (FOIL). While FOIL's effect on fused-fiber couplers is temporary, its damage to forward pump lasers in a high gain EDFA can be permanent.

Li, Stephen X.↗

Temperature Mapping at the Thermal Barrier Coating/Bond Coat Interface by Luminescence Lifetime Imaging Using Integrated Erbium-Doped Sublayers

Full-field temperature mapping of thermal barrier coated components by either infrared thermography or phosphor thermometry has been limited to surface temperature mapping even though temperature mapping at the thermal barrier coating (TBC)/bond coat interface is more relevant for evaluating the TBC thermal protection performance. For the first time, 2D temperature mapping at the TBC/bond coat interface has now been achieved by full-field luminescence lifetime imaging measurements of emission from a thin erbium-doped yttria-stabilized zirconia (YSZ) sensing layer integrated into the TBC below the overlying undoped YSZ. This new capability was applied to map temperatures at the TBC/bond coat interface for TBC-coated specimens subjected to a heat flux produced by the NASA Glenn high heat flux laser facility. In particular, thermal gradients at the TBC/bond coat interface were mapped in regions where the TBC was subjected to erosion or to mechanically induced delamination crack propagation. Finally, temperature mapping of the TBC/bond coat interface was used to evaluate the effectiveness of surface air film cooling at the TBC/bond coat interface.

Eldridge, Jeffrey I.↗

A Fiber-Coupled Erbium-Doped Microsphere Laser

We report a demonstration of an erbium-doped silicate glass microsphere laser with both pumping (at~980nm) and the pickup of laser output (~1550nm) provided by novel angle-polished singel-mode fiber coupler.

microsphere↗

Spectrophotometric study of erbium (III) speciation in chloride solutions from 25 to 75 °C

In this study, UV-Vis spectrophotometric experiments were conducted from 25 to 75 °C using Er-HClO4-bearing solutions with varying NaCl concentrations. The molar absorbance coefficient of Er3+ decreases with temperature, and the absorbance intensity gradually decreases with increasing mCl/mEr ratios. The number of absorbing species include Er3+ and ErCl2+ even at the highest mCl/mEr ratio. The formation constant (β 1 ) for the ErCl 2+ species was derived and fitted between 50 and 250 °C with existing literature values, yielding the following equation: logβ 1 0 = −22.4315 + 0.0345T + 3.9379·10 3 /T, where T is temperature in Kevin.

58 GEOSCIENCES↗

Erbium-Implanted WS 2 Flakes with Room-Temperature Photon Emission at Telecom Wavelengths

Optically addressable spin impurities in crystals along with device engineering provide an attractive route to realizing quantum technologies in the solid state, but reconciling disparate emitter and host material constraints for a given target application is often challenging. Rare-earth ions in two-dimensional (2D) materials could mitigate this problem given the atomic-like transitions of the emitters and the versatile nature of van der Waals systems. Here we combine ion implantation, confocal microscopy, and ab initio calculations to examine the photon emission of Er-doped WS 2 flakes. Optical spectroscopy reveals narrow, long-lived photoluminescence lines in the telecom band, which we activate after low-temperature thermal annealing. Spectroscopic and polarization-selective measurements show a uniform response across the ensemble, while the fluorescence brightness remains mostly unchanged with temperature, suggesting nonradiative relaxation channels are inefficient. Our results create opportunities for novel solid state devices coupling 2D-hosted, telecom-band emitters to photonic heterostructures separately optimized for photon manipulation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗