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Results for “Floating Gate Memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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25 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Porous-Floating-Gate Field-Effect Transistor

Porous-floating-gate, "vertical" field-effect transistor proposed as programmable analog memory device especially suitable for use in electronic neural networks. Analog value of electrical conductance of device represents synaptic weight (strength of synaptic connection) repeatedly modified by application of suitable writing or erasing voltage. Suited for hardware implementations of massively parallel neural-network architectures for two important reasons: vertical transistor structure requires only two external electrodes, and use of tailored amorphous semiconductors provides choice of very wide range of low conductivity values, dictated by overall power dissipation requirements in massively parallel neural-network circuits.

Thakoor, Anilkumar P.↗
NASA NTRS2014

Evaluation of Magnetoresistive RAM for Space Applications

Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

Heidecker, Jason↗
NASA NTRS2009

Comparison of TID Response and SEE Characterization of Single and Multi Level High Density NAND Flash Memories

Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. In general, these commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The charge pump survived up to 600 krads.

nonvolatile memory↗
NASA NTRS2010

Modeling of Sonos Memory Cell Erase Cycle

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memories (NVSMS) have many advantages. These memories are electrically erasable programmable read-only memories (EEPROMs). They utilize low programming voltages, endure extended erase/write cycles, are inherently resistant to radiation, and are compatible with high-density scaled CMOS for low power, portable electronics. The SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. The SONOS floating gate charge and voltage, tunneling current, threshold voltage, and drain current were characterized during an erase cycle. Comparisons were made between the model predictions and experimental device data.

Phillips, Thomas A.↗
NASA NTRS2004

Effects of Heavy Ion Exposure on Nanocrystal Nonvolatile Memory

We have irradiated engineering samples of Freescale 4M nonvolatile memories with heavy ions. They use Silicon nanocrystals as the storage element, rather than the more common floating gate. The irradiations were performed using the Texas A&M University cyclotron Single Event Effects Test Facility. The chips were tested in the static mode, and in the dynamic read mode, dynamic write (program) mode, and dynamic erase mode. All the errors observed appeared to be due to single, isolated bits, even in the program and erase modes. These errors appeared to be related to the micro-dose mechanism. All the errors corresponded to the loss of electrons from a programmed cell. The underlying physical mechanisms will be discussed in more detail later. There were no errors, which could be attributed to malfunctions of the control circuits. At the highest LET used in the test (85 MeV/mg/sq cm), however, there appeared to be a failure due to gate rupture. Failure analysis is being conducted to confirm this conclusion. There was no unambiguous evidence of latchup under any test conditions. Generally, the results on the nanocrystal technology compare favorably with results on currently available commercial floating gate technology, indicating that the technology is promising for future space applications, both civilian and military.

Oldham, Timothy R.↗
NASA NTRS1998

Radiation Effects on Advanced Flash Memories

Flash memories have evolved very rapidly in recent ears. New design techniques such as multilevel storage have been proposed to increase storage density, and are now available commercially. Threshold voltage distributions for single- and three-level technologies are compared. In order to implement this technology special circuitry must be added to allow the amount of charge stored in the floating gate to be controlled within narrow limits during the writing and also to detect the different amounts of charge during reading.

Nguyen, D. N.↗
NASA NTRS2011

SpaceCube 2.0: An Advanced Hybrid Onboard Data Processor

The SpaceCube 2.0 is a compact, high performance, low-power onboard processing system that takes advantage of cutting-edge hybrid (CPU/FPGA/DSP) processing elements. The SpaceCube 2.0 design concept includes two commercial Virtex-5 field-programmable gate array (FPGA) parts protected by gradiation hardened by software" technology, and possesses exceptional size, weight, and power characteristics [5x5x7 in., 3.5 lb (approximately equal to 12.7 x 12.7 x 17.8 cm, 1.6 kg) 5-25 W, depending on the application fs required clock rate]. The two Virtex-5 FPGA parts are implemented in a unique back-toback configuration to maximize data transfer and computing performance. Draft computing power specifications for the SpaceCube 2.0 unit include four PowerPC 440s (1100 DMIPS each), 500+ DSP48Es (2x580 GMACS), 100+ LVDS high-speed serial I/Os (1.25 Gbps each), and 2x190 GFLOPS single-precision (65 GFLOPS double-precision) floating point performance. The SpaceCube 2.0 includes PROM memory for CPU boot, health and safety, and basic command and telemetry functionality; RAM memory for program execution; and FLASH/EEPROM memory to store algorithms and application code for the CPU, FPGA, and DSP processing elements. Program execution can be reconfigured in real time and algorithms can be updated, modified, and/or replaced at any point during the mission. Gigabit Ethernet, Spacewire, SATA and highspeed LVDS serial/parallel I/O channels are available for instrument/sensor data ingest, and mission-unique instrument interfaces can be accommodated using a compact PCI (cPCI) expansion card interface. The SpaceCube 2.0 can be utilized in NASA Earth Science, Helio/Astrophysics and Exploration missions, and Department of Defense satellites for onboard data processing. It can also be used in commercial communication and mapping satellites.

Lin, Michael↗