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DOE OSTI2020

Thermal conductivity of (Ge 2 Sb 2 Te 5 ) 1–x Cx phase change films

Germanium–antimony–telluride has emerged as a nonvolatile phase change memory material due to the large resistivity contrast between amorphous and crystalline states, rapid crystallization, and cyclic endurance. Improving thermal phase stability, however, has necessitated further alloying with optional addition of a quaternary species (e.g., C). In this work, the thermal transport implications of this additional species are investigated using frequency-domain thermoreflectance in combination with structural characterization derived from x-ray diffraction and Raman spectroscopy. Specifically, the room temperature thermal conductivity and heat capacity of (Ge 2 Sb 2 Te 5 ) 1–x C x are reported as a function of carbon concentration (x ≤ 0:12) and anneal temperature (T ≤ 350 °C) with results assessed in reference to the measured phase, structure, and electronic resistivity. Phase stability imparted by the carbon comes with comparatively low thermal penalty as materials exhibiting similar levels of crystallinity have comparable thermal conductivity despite the addition of carbon. The additional thermal stability provided by the carbon does, however, necessitate higher anneal temperatures to achieve similar levels of structural order.

42 ENGINEERING↗

DOE OSTI2022

High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films

Wurtzite aluminum nitride (AlN) has attracted increasing attention for high-power and high-temperature operations due to its high piezoelectricity, ultrawide-bandgap, and large thermal conductivity k. The k of epitaxially grown AlN on foreign substrates has been investigated; however, no thermal studies have been conducted on homoepitaxially grown AlN. In this study, the thickness dependent k and thermal boundary conductance G of homoepitaxial AlN thin films were systematically studied using the optical pump–probe method of frequency-domain thermoreflectance. Our results show that k increases with the thickness and k values are among the highest reported for film thicknesses of 200 nm, 500 nm, and 1 μm, with values of 71.95, 152.04, and 195.71 W/(mK), respectively. Our first-principles calculations show good agreement with our measured data. Remarkably, the G between the epilayer and the substrate reported high values of 328, 477, 1180, and 2590 MW/(m 2 K) for sample thicknesses of 200 nm, 500 nm, 1 μm, and 3 μm, respectively. The high k and ultrahigh G of homoepitaxially grown AlN are very promising for efficient heat dissipation, which helps in device design and has advanced applications in micro-electromechanical systems, ultraviolet photonics, and high-power electronics.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Picosecond magneto-optic thermometry measurements of nanoscale thermal transport in AlN thin films

The thermal conductivity Λ of wide bandgap semiconductor thin films, such as AlN, affects the performance of high-frequency devices, power devices, and optoelectronics. However, accurate measurements of Λ in thin films with sub-micrometer thicknesses and Λ > 100 W m -1 K -1 is challenging. Widely used pump/probe metrologies, such as time–domain thermoreflectance (TDTR) and frequency–domain thermoreflectance, lack the spatiotemporal resolution necessary to accurately quantify thermal properties of sub-micrometer thin films with high Λ. In this work, we use a combination of magneto-optic thermometry and TiN interfacial layers to significantly enhance the spatiotemporal resolution of pump/probe thermal transport measurements. We use our approach to measure Λ of 100, 400, and 1000 nm AlN thin films. We coat AlN thin films with a ferromagnetic thin-film transducer with the geometry of (1 nm-Pt/0.4 nm-Co) x3 /(2 nm-TiN). This PtCo/TiN transducer has a fast thermal response time of <50 ps, which allows us to differentiate between the thermal response of the transducer, AlN thin film, and substrate. For the 100, 400, and 1000 nm thick AlN films, we determine Λ to be 200 ± 80, 165 ± 35, and 300 ± 70 W m -1 K -1 , respectively. We conclude with an uncertainty analysis that quantifies the errors associated with pump/probe measurements of thermal conductivity, as a function of transducer type, thin-film thermal conductivity, and thin-film thickness. Time resolved magneto-optic Kerr effect experiments can measure films that are three to five times thinner than is possible with standard pump/probe metrologies, such as TDTR. This advance in metrology will enable better characterization of nanoscale heat transfer in high thermal conductivity material systems like wide bandgap semiconductor heterostructures and devices.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Accelerated thermal property mapping of TRISO advanced nuclear fuel

TRistructural ISOtropic (TRISO) fuel is a leading-edge nuclear fuel form representing a departure from the more traditional nuclear fuel forms utilized in the reactor fleet of today. Rather than a monolithic fuel pellet of uranium dioxide, integral fuel forms containing TRISO fuel are composed of thousands of microencapsulated uranium-bearing fuel kernels and individually coated with multiple layers of pyrolytic carbon and silicon carbide. These multilayered ceramic coatings serve as an environmental barrier to ensure radioactive and chemically reactive fission products are contained within the reactor fuel elements, but also participate in the transfer of heat generated in the nuclear fuel to the coolant – the primary purpose of a nuclear reactor. Since traditional thermal property measurement techniques, such as laser flash analysis, would be unable to resolve the thermal properties of the individual TRISO coating layers, a simplified frequency-domain thermoreflectance technique has been developed to rapidly map the thermal properties of TRISO particles. Using this technique, the thermal properties of TRISO particles have been mapped from room temperature up to 1000 °C to examine the spatial variation and temperature-dependency of the thermal properties within each layer. Additionally, spatial-domain thermoreflectance was used to examine the anisotropy of the thermal properties for each layer at different locations within a single TRISO particle, and across multiple TRISO particles to assess the intra- and inter-particle uniformity of thermal properties, respectively. To elucidate the underlying causes for the measured variations in thermal properties, scanning electron microscopy and Raman spectroscopy were used to examine variations in microstructure and chemical bonding within the different coating layers. Results from this work are then compared with previous examinations of TRISO fuel particles and microstructurally driven mechanisms for the variations in the measured thermal properties of the different carbonaceous layers are discussed.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2024

Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices

Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to improve thermal management in lateral devices; however, engineering challenges remain with the bonding process and characterizing the bond quality for vertical device architectures. Here, in this study, integration of these two materials is achieved by room-temperature compression bonding centimeter-scale GaN and a diamond die via an intermetallic bonding layer of Ti/Au. Recent attempts at GaN/diamond bonding have utilized a modified surface activation bonding (SAB) method, which requires Ar fast atom bombardment immediately followed by bonding within the same tool under ultrahigh vacuum (UHV) conditions. The method presented here does not require a dedicated SAB tool yet still achieves bonding via a room-temperature metal–metal compression process. Imaging of the buried interface and the total bonding area is achieved via transmission electron microscopy (TEM) and confocal acoustic scanning microscopy (C-SAM), respectively. The thermal transport quality of the bond is extracted from spatially resolved frequency-domain thermoreflectance (FDTR) with the bonded areas boasting a thermal boundary conductance of >100 MW/m 2 ·K. Additionally, Raman maps of GaN near the GaN–diamond interface reveal a low level of compressive stress, <80 MPa, in well-bonded regions. FDTR and Raman were coutilized to map these buried interfaces and revealed some poor thermally bonded areas bordered by high-stress regions, highlighting the importance of spatial sampling for a complete picture of bond quality. Overall, this work demonstrates a novel method for thermal management in vertical GaN devices that maintains low intrinsic stresses while boasting high thermal boundary conductances.

Raman↗

DOE OSTI2024

Experimental investigation of thermal conductivity of high entropy ceramics

In this talk, we will present the experimental investigation of thermal conductivity of high entropy carbides (HEC) and borides (HEB) with different compositions. Thermal conductivity determines the capability of a material to transport thermal energy and is considered as one critical physical property, specially in the energy industry. Due to the presences of disordered cation sublattice, it is expected that thermal conductivity of high entropy ceramics is lower than the counterparts with simpler compositions, but the experimental studies are relatively few. Using laser-based spatial-domain and frequency-domain thermoreflectance technique, we measured thermal conductivity of HECs and HEBs in a temperature range from 77K to 773K. Furthermore, by focusing the laser using an objective lens, we were able to perform the thermal property mapping on samples with the spatial resolution of micrometer. Such measurements could reveal important microstructure information in a rapid and efficient way without using scanning electron microscopy. The high spatial resolution also enables thermal conductivity measurements on ion-irradiated HECs with the damage layer of merely 1.1µm. These measurements can provide valuable information to predict the performances of HECs and HEBs with different compositions and from different manufacturing processes, and in the extreme environments such as nuclear reactors.

36 - MATERIALS SCIENCE↗

DOE OSTI2025

Local Thermal Conductivity Patterning in Rotating Lattice Crystals of Anisotropic Sb 2 S 3

The ability to control material heat transport properties over space and time can drive advanced functionalities in thermal management for electronics and system-on-chip, and enable thermal circuits. Despite the technological relevance, there are limited demonstrations of local thermal property control. Rotating lattice single (RLS) crystals—formed via laser-induced crystallization of an amorphous substrate—offer a novel avenue for local crystal engineering, unlocking opportunities for microscale property patterning. Here, thermal conductivity (𝜅) imaging is applied to RLS crystals of Sb2S3 to resolve microscale 𝜅 variations across patterned regions. Amorphous areas exhibit 𝜅 as low as 0.6 Wm −1 K −1 , while crystalline regions display periodic 𝜅 variations from 0.7 to over 2.5 Wm −1 K −1 . These variations correspond to changes in crystal orientation, revealing marked 𝜅 anisotropy. The crystal out-of-plane direction (c axis)—featuring van der Waals bonds—shows amorphous-like transport, whereas in-plane directions (a, b axes) exhibit 3.5x and 1.7x larger 𝜅, respectively. First-principles calculations, in excellent agreement with experiments, suggest that the in-plane anisotropy originates from expressed Sb lone pairs, which impart a corrugation along the b axis affecting bond stiffness and 𝜅. These findings demonstrate microscale control of thermal properties via laser-processed metastructures, with significant implications for next-generation thermal management.

14 SOLAR ENERGY↗

DOE OSTI2021

Probing thermal conductivity of subsurface, amorphous layers in irradiated diamond

In this study, we report on the thermal conductivity of amorphous carbon generated in diamond via nitrogen ion implantation (N 3+ at 16.5 MeV). Here, transmission electron microscopy techniques demonstrate amorphous band formation about the longitudinal projected range, localized approximately 7 μm beneath the sample surface. While high-frequency time-domain thermoreflectance measurements provide insight into the thermal properties of the near-surface preceding the longitudinal projected range depth, a complimentary technique, steady-state thermoreflectance, is used to probe the thermal conductivity at depths which could not otherwise be resolved. Through measurements with a series of focusing objective lenses for the laser spot size, we find the thermal conductivity of the amorphous region to be approximately 1.4 W m –1 K –1 , which is comparable to that measured for amorphous carbon films fabricated through other techniques.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Thermal model for time-domain thermoreflectance experiments in a laser-flash geometry

Time-domain thermoreflectance (TDTR) is a well-established pump–probe method for measuring thermal conductivity and interface conductance of multilayers. Interpreting signals in a TDTR experiment requires a thermal model. In standard front/front TDTR experiments, both pump and probe beams typically irradiate the surface of a multilayer. As a result, existing thermal models for interpreting thermoreflectance experiments assume that the pump and probe beams both interact with the surface layer. Here, we present a frequency-domain solution to the heat-diffusion equation of a multilayer in response to nonhomogeneous laser heating. This model allows analysis of experiments where the pump and probe beams irradiate opposite sides of a multilayer. We call such a geometry a front/back experiment to differentiate such experiments from standard TDTR experiments. As an example, we consider a 60nm amorphous Si film. We consider how signals differ in a front/front vs front/back geometry and compare thermal model predictions to experimental data.

Peng, Wanyue↗

DOE OSTI2022

Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films

High aspect ratio metal nanostructures are commonly found in a broad range of applications such as electronic compute structures and sensing. The self-heating and elevated temperatures in these structures, however, pose a significant bottleneck to both the reliability and clock frequencies of modern electronic devices. Any notable progress in energy efficiency and speed requires fundamental and tunable thermal transport mechanisms in nanostructured metals. Here, in this work, time-domain thermoreflectance is used to expose cross-plane quasi-ballistic transport in epitaxially grown metallic Ir(001) interposed between Al and MgO(001). Thermal conductivities ranges from roughly 65 (96 in-plane) to 119 (122 in-plane) W m -1 K -1 for 25.5–133.0 nm films, respectively. Further, low defects afforded by epitaxial growth are suspected to allow the observation of electron–phonon coupling effects in sub-20 nm metals with traditionally electron-mediated thermal transport. Via combined electro-thermal measurements and phenomenological modeling, the transition is revealed between three modes of cross-plane heat conduction across different thicknesses and an interplay among them: electron dominant, phonon dominant, and electron–phonon energy conversion dominant. The results substantiate unexplored modes of heat transport in nanostructured metals, the insights of which can be used to develop electro-thermal solutions for a host of modern microelectronic devices and sensing structures.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Thermal transport across nanoscale damage profile in sapphire irradiated by swift heavy ions

In this work, we studied the degradation of thermal conductivity in single crystal sapphire (α-Al 2 O 3 ) irradiated by 167 MeV Xe swift heavy ions (SHIs) over the multiple fluences in the range of 10 12 –10 14 ions/cm 2 . Thermal conductivity was measured primarily in the cross-plane direction using a noncontact ultrafast optical pump-probe technique called picosecond time domain thermoreflectance (TDTR). Multiple samples with variable ion fluences allowed us to probe distinct regions resulting from different regimes of microstructure evolution caused by electronic energy loss. By tuning the penetration depth of the thermal waves using different modulation frequencies, two regions with distinct conductivities were identified and the values of which were found to be consistent with phonon-mediated thermal transport models while the microstructure was confirmed by electron microscopy characterization. These damaged regions were determined to be a several micrometer thick ion track region and several tens of nanometer-thick amorphous layer present only above 5.0 × 10 13 ions/cm 2 . These results demonstrate the applicability of TDTR to resolve thermal transport behavior in SHI irradiated oxides having nonhomogeneous damage profile on a nanometer scale. The presented approach facilitates future studies aiming at resolving the impact of distinct damage resulting from electronic and nuclear stopping regimes under irradiation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2023

Origins of heat transport anisotropy in MoTe2 and other bulk van der Waals materials

Knowledge of how heat flows anisotropically in van der Waals (vdW) materials is crucial for thermal management of emerging 2D materials devices and design of novel anisotropic thermoelectric materials. Despite the importance, anisotropic heat transport in vdW materials is yet to be systematically studied and is often presumably attributed to anisotropic speeds of sound in vdW materials due to soft interlayer bonding relative to covalent in-plane networks of atoms. In this work, we investigate the origins of the anisotropic heat transport in vdW materials, through time-domain thermoreflectance (TDTR) measurements and first-principles calculations of anisotropic thermal conductivity of three different phases of MoTe 2 . MoTe 2 is ideal for the study due to its weak anisotropy in the speeds of sound. We find that even when the speeds of sound are roughly isotropic, the measured thermal conductivity of MoTe 2 along the c-axis is 5–8 times lower than that along the in-plane axes. We derive meaningful characteristic heat capacity, phonon group velocity, and relaxation times from our first principles calculations for selected vdW materials (MoTe 2 , BP, h-BN, and MoS 2 ), to assess the contributions of these factors to the anisotropic heat transport. Interestingly, we find that the main contributor to the heat transport anisotropy in vdW materials is anisotropy in heat capacity of the dominant heat-carrying phonon modes in different directions, which originates from anisotropic optical phonon dispersion and disparity in the frequency of heat-carrying phonons in different directions. Further, the discrepancy in frequency of the heat-carrying phonons also leads to ~2 times larger average relaxation times in the cross-plane direction, and partially explains the apparent dependence of the anisotropic heat transport on the anisotropic speeds of sound. This work provides insight into understanding of the anisotropic heat transport in vdW materials.

36 MATERIALS SCIENCE↗