Search NASA⌕ Search

SEARCH · Search NASA

Results for “GETTERING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells

To facilitate cost-effective manufacturing of boron-implanted silicon solar cells as an alternative to BBr 3 diffusion, we performed a quantitative test of the gettering induced by solar-typical boron-implants with the potential for low saturation current density emitters (< 50 fA/cm 2 ). We show that depending on the contamination level and the gettering anneal chosen, such boron-implanted emitters can induce more than a 99.9% reduction in bulk iron point defect concentration. The iron point defect results as well as synchrotron-based Nano-X-ray-fluorescence investigations of iron precipitates formed in the implanted layer imply that, with the chosen experimental parameters, iron precipitation is the dominant gettering mechanism, with segregation-based gettering playing a smaller role. We reproduce the measured iron point defect and precipitate distributions via kinetics modeling. First, we simulate the structural defect distribution created by the implantation process, and then we model these structural defects as heterogeneous precipitation sites for iron. Unlike previous theoretical work on gettering via boron- or phosphorus-implantation, our model is free of adjustable simulation parameters. The close agreement between the model and experimental results indicates that the model successfully captures the necessary physics to describe the iron gettering mechanisms operating in boron-implanted silicon. Furthermore, this modeling capability allows high-performance, cost-effective implanted silicon solar cells to be designed.

14 SOLAR ENERGY↗

Technetium and iodine getters to improve Cast Stone performance - 15420

Technetium-99 ({sup 99}Tc) and iodine-129 ({sup 129}I) have been determined to be tank waste components contributing most to the environmental impacts associated with the cleanup of the Hanford site. Cast Stone, which has the ability to immobilize {sup 99}Tc, {sup 129}I, and other contaminants of concern, is being considered as a low temperature waste form for solidification of aqueous secondary liquid effluents from the Hanford Tank Waste Treatment and Immobilization Plant (WTP) An environmental assessment of Cast Stone performance, using measured diffusivities of the radionuclides from the Cast Stone product, calculates groundwater at the 100 m down-gradient in excess of the allowable maximum permissible concentrations for both radionuclides. Therefore, an opportunity exists to improve the performance of Cast Stone. One method for improvement is through the addition of immobilizing agents known as 'getters' that selectively sequester Tc and I. In the present paper, we report on seven getter materials that have been tested for Tc and five materials that have been tested for I to determine their effectiveness for radionuclide removal in a series of batch sorption tests in 18.2 MΩ DI H{sub 2}O and a 7.8 M Na Ave LAW waste simulant. Contact experiments have been carried out in anoxic conditions at room temperature, with varying solid-to-solution ratios, and in the presence and absence of competing species. Results indicate that most materials perform better in the 18.2 MΩ DI H{sub 2}O compared to the 7.8 M Na LAW waste simulant for both Tc and I getter. Radionuclide sequestration may be affected by the presence of the redox sensitive Cr(VI) in the simulant. The top performing Tc getter materials, Sn(II)-apatite, BFS-2, KMS-2 and Sn-hydroxyapatite, were examined through various solid-state characterization techniques such as SEM/XEDS, XANES and EXAFS. Tc removal is theorized to occur through reduction of the highly soluble Tc(VII) species to the less soluble Tc(IV). Solution results from the series of I tests show that iodide is effectively removed from solution via, most likely, a precipitation reaction of AgI. A wide range of I getter materials and the silver exchanged zeolite getter performed well in both DI water and the simulant. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Probing the Radial Chemistry of Getter Components in Light Water Reactors via Controlled Electrochemical Dissolution

Getters are among the key functional components in the Tritium Producing Burnable Absorber Rods (TPBARs) of Light Water Reactors, and are used to capture the released tritium gas. They are cylindrical tubes comprised of the alloy zircaloy-4 which is coated with nickel plating both internally and externally. Their exposure to tritium as well as the irradiation environments in the light water reactors changes their structure, chemical composition and chemistry. Understanding the radial tritium distribution is key to gaining insight into the evolution of new chemistry upon irradiation in order to predict getter performance. Consequently, efforts are underway to devise a method that can allow selective probing into the getter core radially to probe the chemistry akin to carefully and selectively peeling of the layers of an onion. We have recently devised an electrochemical dissolution technique for controlled radial dissolution of zirconium based liners; this work describes the first proof-of-concept demonstration of the applicability of this technique on the controlled radial dissolution of nickel plated getters. The technique is complemented with periodic analysis of the electrolyte solution to measure the rates of release of the various elemental components and therefore glean information on their radial distribution across the getter; further complementary microscopy on the exposed surfaces allows us insight into the chemistry at the getter core.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

Development of Chromium and Sulfur Getter for Solid Oxide Fuel Cell (SOFC) System

Under the “real world” SOFC operating conditions, gaseous Cr and S species coexist in air stream. The combined Cr and S effect on the electrochemical poisoning of candidate LSM and LSCF electrodes has been investigated. Electrochemical and structural analysis revealed that the combined Cr and S interactions with the LSCF electrode remains significantly different from those of the individual Cr and S interactions. S reacts with the surface SrO accompanied by morphological changes whereas the hexavalent gaseous Cr species mainly deposit at the LSCF/GDC interface as is the case with Cr-only poisoning. For LSM electrode, the combined interactions of Cr and S remains similar to the sum of individual Cr and S effects as SO 2 reacts with Sr-rich regions of the bulk LSM, while Cr deposits at the electrochemically active sites. The use of getter, consisting of alkaline earth and transition metal oxides, has been proposed as a cost-effective approach to mitigate electrode poisoning. SrMnO 3 (SMO) is suggested as a robust getter material for the co-capture of airborne gaseous S and Cr species entering high-temperature electrochemical systems. The honeycomb getter forms, covered with SMO nanoparticles, were fabricated using dip coating. The SMO getter successfully maintained the electrochemical activity of LSM under the presence of gaseous Cr and S species, validating the efficacy of the getter. Post-test characterization revealed that the absorption of S and Cr contaminants led to the elongation of granular SMO particles, forming SrO nanorods and SrCrO 4 whiskers leaving Mn oxides underneath where inward-migrating Cr reside, indicating the high mutual affinity of Sr and Mn. The growth of reaction products during the long term exposure favors continued absorption of incoming S and Cr contaminants. The Mn 2 O 9 dimers, existing on the surface, are considered to help absorb S and Cr impurities, along with the Sr-terminated surface. The SMO getter also displays robust stability in humid environments at high temperatures without phase transformation or hydrolysis, fulfilling the requirement for operation in high-temperature electrochemical systems.

30 DIRECT ENERGY CONVERSION↗

Getters for improved technetium containment in cementitious waste forms

A cementitious waste form, Cast Stone, is a possible candidate technology for the immobilization of low activity nuclear waste (LAW) at the Hanford site. This paper focuses on the addition of getter materials to Cast Stone that can sequester Tc from the LAW, and in turn, lower Tc release from the Cast Stone. Two getters which produce different products upon sequestering Tc from LAW were tested: Sn(II) apatite (Sn-A) that removes Tc as a Tc(IV)-oxide and potassium metal sulfide (KMS-2) that removes Tc as a Tc(IV)-sulfide species, allowing for a comparison of stability of the form of Tc upon entering the waste form. The Cast Stone with KMS-2 getter had the best performance with addition equivalent to ~0.08 wt% of the total waste form mass. The observed diffusion (D obs ) of Tc decreased from 4.6 ± 0.2 × 10 -12 cm 2 /s for Cast Stone that did not contain a getter to 5.4 ± 0.4 × 10 -13 cm 2 /s for KMS-2 containing Cast Stone. Finally, it was found that Tc-sulfide species are more stable against re-oxidation within getter containing Cast Stone compared with Tc-oxide and is the origin of the decrease in Tc D obs when using the KMS-2.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Dominant factors of the laser gettering of silicon wafers

The laser gettering of silicon wafers is experimentally investigated. The typical gettering parameters are considered. The surfaces of laser-treated silicon wafers are investigated by microscopy. When studying the effect of laser radiation on silicon wafers during gettering, a group of factors determining the conditions of interaction between the laser beam and silicon-wafer surface and affecting the final result of treatment are selected. The main factors determining the gettering efficiency are revealed. Limitations on the desired value of the getter-layer capacity on surfaces with insufficiently high cleanness (for example, ground or matte) are established.

36 MATERIALS SCIENCE↗

Fundamental Studies of Tritium Formation and Diffusivity in Pure and Defective Zircaloy-4 Getters

Zirconium (Zr) and its alloys are used as fuel cladding in nuclear reactors. These materials have their low absorption cross-section for thermal neutrons and have good mechanical and thermal properties. In addition, they are used as tritium getters in tritium-producing burnable absorber rods (TPBARs), in the form of nickel-plated Zircaloy-4 tubes. To produce 3 H, the breading blankets such as lithium aluminate are irradiated in pressurized water. 3 H produced in this process is captured by the getter and 3 H reacts chemically with Zr to form metal hydride (ZrTx). The precipitation of metal hydride results in not only the volume increase and hydrogen embrittlement of zircaloy but also changes in getter’s chemical properties. This degrades the getter’s performance. Therefore, understanding the behavior of 3 H (such as diffusion and solubility) in zircaloy is important to understand getter performance.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Regulating Top-Surface Multilayer/Single-Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

A unique strategy is reported to constrain the nucleation centers for multilayer graphene (MLG) and, later, single-crystal graphene domains by gettering carbon source on backside of the flat Cu foil, during chemical vapor deposition. Hitherto, for a flat Cu foil, the top-surface-based growth mechanism is emphasized, while overlooking the graphene on the backside. However, the systematic experimental findings indicate a strong correlation between the backside graphene and the nucleation centers on the top-surface, governed by the carbon diffusion through the bulk Cu. This understanding steers to devise a strategy to mitigate the carbon diffusion to the top-surface by using a carbon “getter” substrate, such as nickel, on the backside of the Cu foil. Depth profiling of the nickel substrate, along with the density functional theory calculations, verifies the gettering role of the nickel support. The implementation of the backside carbon gettering approach on single-crystal graphene growth results in lowering the nucleation density by two orders of magnitude. This enables the single-crystal domains to grow by 6 mm laterally on the untreated Cu foil. Finally, the growth of large-area polycrystalline single layer graphene, free of unwanted MLG domains, with significantly improved field-effect mobility of ≈6800 cm 2 V -1 s -1 is demonstrated.

36 MATERIALS SCIENCE↗

Effect of Iron Contamination and Polysilicon Gettering on the Performance of Polysilicon‐Based Passivating Contact Solar Cells

Over the past decade, silicon solar cells with carrier-selective passivating contacts based on polysilicon capping an ultra-thin silicon oxide (commonly known as TOPCon or POLO) have demonstrated promising efficiency potentials and are regarded as an evolutionary upgrade to the PERC (passivated emitter and rear contact) cells in manufacturing. The polysilicon-based passivating contacts also exhibit excellent gettering effects that relax the wafer and cleanroom requirements to some extent. Here, in this work, we experimentally explore the impact of bulk iron contamination and polysilicon gettering on the passivation quality of the polysilicon/oxide structure and the resulting solar cells performance. Results show that both n- and p-type polysilicon/oxide passivating contacts are not affected by iron gettering, demonstrating robust and stable passivation quality. However, for a very high bulk iron contamination (1 × 10 13 cm −3 ), the accumulated iron in the p-type lightly boron-doped emitter in crystalline silicon would degrade the emitter saturation current density. This can cause a reduction in both open-circuit voltage and short-circuit current. Meanwhile, this very high iron content (1 × 10 13 cm −3 ) can further degrade the fill factor and temperature coefficient of the cells. On the other hand, for an initial iron content of 2 × 10 12 cm −3 , which should be well above the iron level in the current industrial Czochralski silicon wafers, the resulting cells demonstrate similar performance as the control group with no intentional iron contamination. This work brings attention to both the benefits of polysilicon gettering effects as well as the potential degradation due to the accumulation of metal impurities in the p-type emitter region.

14 SOLAR ENERGY↗

Enhancement of electrical parameters in solar grade monocrystalline silicon by external gettering through sacrificial silicon nanowire layer

Highlights: • Silicon nanowire-based gettering process decreases the metallic impurity concentration. • Gettering process ameliorates the transport parameters of silicon substrates. • The electrical properties of silicon solar cells are significantly improved. - Abstract: In this work, we report a simple and efficient purification technique of solar grade silicon wafers suitable for high efficiency and low-cost silicon solar cells. This gettering method requires the elaboration of silicon nanowire thin layer followed by an annealing treatment and removing impurity loaded silicon nanowires. ICP-AES analysis shows a significant decrease in the metallic impurity concentration resulting considerable enhancement in the silicon purity grade. Electrical characterizations reveal a global decrease of the majority carrier concentration and a substantial improvement of the minority carrier lifetime. Furthermore, the application of this novel gettering process induces an enhancement in the silicon solar cell electrical parameters. These results give evidence of the effectiveness of the proposed purification method to produce efficient solar cells starting from low-quality silicon wafers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si

In this work, we develop models for the gettering of metals in silicon by high phosphorus concentration. We first performed ab initio calculations to determine favorable configurations of complexes involving phosphorus and transition metals (Fe, Cu, Cr, Ni, Ti, Mo, and W). Our ab initio calculations found that the P{sub 4}V cluster, a vacancy surrounded by 4 nearest-neighbor phosphorus atoms, which is the most favorable inactive P species in heavily doped Si, strongly binds metals such as Cu, Cr, Ni, and Fe. Based on the calculated binding energies, we build continuum models to describe the P deactivation and Fe gettering processes with model parameters calibrated against experimental data. In contrast to previous models assuming metal-P{sub 1}V or metal-P{sub 2}V as the gettered species, the binding of metals to P{sub 4}V satisfactorily explains the experimentally observed strong gettering behavior at high phosphorus concentrations.

36 MATERIALS SCIENCE↗

Evaluation of getters for methane and ammonia decomposition

Getters are used in many tritium purification systems for impurity removal. One getter material, SAES® ST909, can be used to decompose various impurities (methane, carbon oxides, ammonia and others), and release the hydrogen bound in these compounds for further processing. Because, ST909 absorbs eight to nine percent of its initial weight in nitrogen, alternate materials may provide greater operational flexibility to accommodate variable operating carrier gases. The gettering capability of ST909 is related to the tri-metallic alloy (zirconium, manganese, and iron) composition. However, simply using a material with the same composition may not provide similar methane and ammonia decomposition conversion efficiency. For this testing, alternative materials to ST909 are compared to track methane and ammonia decomposition performance. Bench scale tests were performed at elevated temperature using various gas mixtures. Changes in methane and ammonia decomposition performance were tracked using RGA analysis during bench scale testing. Analytical comparisons of chemically equivalent materials to ST909 were also performed and correlated to bench scale test results. Characterization testing performed to evaluate chemically equivalent materials included: X-ray fluorescence, X-ray diffraction, and inductively coupled plasma-mass spectrometry (ICP-MS). Results are expounded upon and differences in gettering capability of alternate materials are highlighted.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Hydrogen Uptake Kinetics of 1,4-Bis(phenylethynyl)benzene Rubberized O-Rings: Measurements, Modeling, and Comparison with Additional Forms of Organic Getters

A class of molecules called “hydrogen getters” can react with, or scavenge, H 2 in applications where the hydrogen presence and/or buildup are not desirable. One such “getter”, 1,4-bis(phenylethynyl)benzene or DEB, can be incorporated into a silicone matrix in the form of an O-ring for added flexibility, environmental resiliency, and convenient use as a gasket in sealed applications. However, the performance and kinetics of this DEB-loaded rubberized O-ring have not yet been characterized. Here in this work, the hydrogen uptake kinetics of the rubberized DEB O-ring were extracted by the isoconversional analysis from isothermal isobaric data under conditions of 13,332 Pa H 2 and 305–325 K. The isoconversional and cylindrical diffusion approximations were then used to predict and model the hydrogen uptake of rubberized DEB O-rings under any arbitrary condition, as illustrated in this work for the simple case of a constant rate of hydrogen generation/input. In comparison with other Pd/carbon-based/organic getter systems, these rubberized DEB O-rings provide a type of hydrogen getter material with enhanced flexibility and catalyst protection in applications where an O-ring seal is needed.

36 MATERIALS SCIENCE↗

Effect of Thermal Processes on Copper‐Tin Alloys for Zinc Gettering

A contamination mitigation plan was initiated to address the discovery of radioactive zinc-65 in a glovebox. A near term solution was developed, installation of heated filters in the glovebox piping. This solution is effective at retaining the zinc in the currently contaminated area, but the gamma emitting contaminant is still present in a system designed for tritium beta. A project was initiated to develop a solution to contain the 65 Zn in the furnace module. Copper and bronze (a Cu/Sn alloy) were found to be candidate materials to combine with zinc-65 vapor, using thermodynamic calculations. A series of binary Cu/Sn alloys were developed (after determining that commercial alloys were unacceptable), that were found to be effective traps of zinc vapor. The task described in this report was undertaken to determine if the bronze substrates would retain their zinc gettering capability after being exposed to simulated extraction conditions with oxidizing and reducing gases. Pure copper and three bronze alloys were prepared, exposed to varying oxidation conditions from 250 to 450°C, then exposed to varying reduction conditions in He-H 2 from 250-450°C, and finally exposed to zinc vapor at 350°C for four hours. The samples were characterized using scanning electron microscopy, X-ray diffraction, differential thermal analysis, mass change, and visual observation. It was observed that the as fabricated samples and the reduced samples all retained their zinc gettering capacity while samples in the "as-oxidized" condition exhibited losses in zinc gettering capacity. Over the range of conditions tested, i.e., composition, oxidation temperature, and reduction temperature, no particular sample composition appeared better. Samples reduced at 350°C exhibited the greatest zinc capacity, although there were some testing anomalies associated with these samples. This work clearly demonstrated that the zinc gettering was not adversely affected by exposure to simulated process conditions and a full scale lithium and zinc trap should be fabricated for testing in the Tritium Extraction Facility.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, reproducibly semi-insulating GaAs were grown by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.

Ko, K. Y.↗

On Predicting Transient Pressure in Vacuum Systems Featuring Getter Materials

Getter materials have been used to reduce pressure or partial pressures in a variety of vacuum applications ranging from vacuum tubes to space flight science instruments. Testing of getter materials has tended to emphasize the capacity of candidate materials to collect specific gas species in sufficient quantities to size them in these applications. When determining a getter material’s capacity, it is typically subjected to enough excess target gas to ensure it sorbs as quickly as possible. However, when both the gas source strength and the getter’s sorption rate exhibit transient decay behavior, such data is not sufficient to predict the targeted species’ partial pressure within a vacuum system as a function of time.

M. S. Woronowicz↗

On Predicting Transient Pressure in Vacuum Systems Featuring Getter Materials

Getter materials have been used to reduce pressure or partial pressures in a variety of vacuum applications ranging from vacuum tubes to space flight science instruments. Testing of getter materials has tended to emphasize the capacity of candidate materials to collect specific gas species in sufficient quantities to size them in these applications. When determining a getter material’s capacity, it is typically subjected to enough excess target gas to ensure it sorbs as quickly as possible. However, when both the gas source strength and the getter’s sorption rate exhibit transient decay behavior, such data is not sufficient to predict the targeted species’ partial pressure within a vacuum system as a function of time.

M. S. Woronowicz↗

On Predicting Transient Pressure in Vacuum Systems Featuring Getter Materials

Getter materials have been used to reduce pressure or partial pressures in a variety of vacuum applications ranging from vacuum tubes to space flight science instruments. Testing of getter materials has tended to emphasize the capacity of candidate materials to collect specific gas species in sufficient quantities to size them in these applications. When determining a getter material’s capacity, it is typically subjected to enough excess target gas to ensure it sorbs as quickly as possible. However, when both the gas source strength and the getter’s sorption rate exhibit transient decay behavior, such data is not sufficient to predict the targeted species’ partial pressure within a vacuum system as a function of time.

Michael Woronowicz↗