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Results for “Gallium nitride (GaN)”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Power Amplifier Module with 734-mW Continuous Wave Output Power

Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers-to generate higher frequency signals in nonlinear Schottky diode-based LO sources. By advancing PA technology, the LO system performance can be increased with possible cost reductions compared to current GaAs PAs. High-power, high-efficiency GaN PAs are cross-cutting and can enable more efficient local oscillator distribution systems for new astrophysics and planetary receivers and heterodyne array instruments. It can also allow for a new, electronically scannable solid-state array technology for future Earth science radar instruments and communications platforms.

Fung, King Man↗
NASA NTRS2012

Radiation and Thermal Cycling Effects on EPC1001 Gallium Nitride Power Transistors

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Information pertaining to performance of electronic parts and systems under hostile environments is very scarce, especially for new devices. Such data is very critical so that proper design is implemented in order to ensure mission success and to mitigate risks associated with exposure of on-board systems to the operational environment. In this work, newly-developed enhancement-mode field effect transistors (FET) based on gallium nitride (GaN) technology were exposed to various particles of ionizing radiation and to long-term thermal cycling over a wide temperature range. Data obtained on control (un-irradiated) and irradiated samples of these power transistors are presented and the results are discussed.

Patterson, Richard L.↗
NASA NTRS2013

A Cross-Track Cloud-Scanning Dual-Frequency Doppler (C2D2) Radar for the Proposed ACE Mission and Beyond

The National Resource Council’s Earth Science Decadal Survey” (NRCDS) has identified the Aerosol/Climate/Ecosystems (ACE) Mission as a priority mission for NASA Earth science. The NRC recommended the inclusion of "a cross-track scanning cloud radar with channels at 94 GHz and possibly 34 GHz for measurement of cloud droplet size, glaciation height, and cloud height". Several radar concepts have been proposed that meet some of the requirements of the proposed ACE mission but none have provided scanning capability at both 34 and 94 GHz due to the challenge of constructing scanning antennas at 94 GHz. In this paper, we will describe a radar design that leverages new developments in microwave monolithic integrated circuits (MMICs) and micro-machining to enable an electronically-scanned radar with both Ka-band (35 GHz) and W-band (94-GHz) channels. This system uses a dual-frequency linear active electronically-steered array (AESA) combined with a parabolic cylindrical reflector. This configuration provides a large aperture (3m x 5m) with electronic-steering but is much simpler than a two-dimension AESA of similar size. Still, the W-band frequency requires element spacing of approximately 2.5 mm, presenting significant challenges for signal routing and incorporation of MMICs. By combining (Gallium Nitride) GaN MMIC technology with micro-machined radiators and interconnects and silicon-germanium (SiGe) beamforming MMICs, we are able to meet all the performance and packaging requirements of the linear array feed and enable simultaneous scanning of Ka-band and W-band radars over swath of up to 100 km.

Aerosol/Climate/Ecosystems (ACE) Mission↗
NASA NTRS2019

Multi-Band and Multi-Function Reconfigurable Gallium Nitride Based Fully Solid-State Microwave Power Module for Cognitive Radio/Radar Platforms

This paper presents as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurable S-/X-band Gallium Nitride (GaN) based fully solid-state microwave power module (SSMPM) for the role as the transmit module in a cognitive radio (CR). The SSMPM synergistically integrates multiple amplifiers through diplexing and high power switches to enable a single SSMPM capable of functioning as both S-/X-band amplifiers for telemetry, tracking, and command (TT&C), telecommunications, and science data downlink or as X-band radar for proximity sensing onboard a planetary exploration spacecraft. Integration of an electric field shaping field plate (FP) onto the GaN high electron mobility transistors (HEMTs) in this SSMPM provides increased performance and reliability for operation in the harsh conditions of space. This SSMPM is capable of delivering saturated power (Psat) of 39 dBm (8 W continuous wave (CW)) at S-band, P(sub sat) of 43 dBm (20 W CW) at X-band, and P(sub sat) of >50 dBm (>100 W Pulsed) at X-band.

Simons, Rainee N.↗
NASA NTRS2020

Characterization and Commissioning of a Ka-Band Ground Station for Cognitive Algorithm Development

In 2018, the Cognitive Communications and Propagation projects completed installation and checkout testing of a new Ka-Band ground station at the NASA Glenn Research Center in Cleveland, Ohio. The Cognitive Algorithms Demonstration Testbed (CADeT) was developed to provide a fully characterized and controllable dynamic link environment to researchers looking to demonstrate hardware and software aligned with atmospheric sensing and cognitive algorithms. CADeT integrates a host of precision control and measurement systems in addition to repurposing a 5.5 meter beam-waveguide dish platform previously used with the Advanced Communications Technology Satellite (ACTS). This paper will discuss the laboratory testing of ground station components with a emphasis on elements vital to achieving link budget requirements including characterization of the new Gallium Nitride (GaN) Solid State Power Amplifier (SSPA) and far-field measurements of the new antenna feed. Finally, the paper discusses in-situ tests conducted with CADeT and the Tracking and Data Relay Satellite System (TDRSS) to validate laboratory results and make necessary link budget adjustments before reviewing the lessons learned.

Cameron M Seidl↗
NASA NTRS2020

Performance Evaluation of Isolated Gate Driver, ADuM4121, Under Exposure to Extreme Temperature

Electronics designed for use in space missions are expected to be exposed to harsh environment including radiation and extreme temperature, to name a few. Severe thermal swings are also encountered depending on planetary exploration, orbital orientation, and mission duration. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. In this work, the performance of an isolated gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Boomer, Kristen↗
NASA NTRSDate not supplied

Wide Bandgap Reliability and Application Guidelines

Wide Bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN) have emerged as promising technologies due to the advantages they offer over silicon (Si). Under the NASA Electronic Parts and Packaging (NEPP) Program, Glenn Research Center (GRC) supports a task called "Wide Bandgap Reliability and Application Guidelines." This presentation summarizes the work performed under this task, to be presented at the 2020 NEPP Electronics Technology Workshop in June 2020.

Wide Bandgap Semiconductors↗
NASA NTRSDate not supplied

Design of 1 kW Simplified Stirling Controller Using Capacitor-Based Power Factor Correction

Free-piston Stirling convertors hold potential for efficient, reliable thermal to electric power conversion, provided they are paired with a robust controller. This paper outlines work underway on a system-level optimization of a kW controller. Using simplified control and passive power factor correction (PFC) this design explores the possibility of reducing programmatic risk through system simplification. Efficiency is improved through incorporating wide-bandgap gallium nitride (GaN) switches, and PFC volume is minimized through the use of polymer multi-layer capacitors. This work is aimed at exploring new approaches for future Stirling space power concepts.

Stirling↗
NASA NTRSDate not supplied

Optimization, Design, and Demonstration of 1 kW Stirling Controller Using Capacitor-based Power Factor Correction

Free-piston Stirling convertors provide efficient, reliable thermal to electric power conversion, provided they are paired with a reliable controller. This paper outlines work underway on design concepts for kilowatt-class controllers. Using passive power factor correction (PFC) this design explores the possibility of reducing programmatic risk through system simplification. Efficiency is maximized through incorporating wide-bandgap gallium nitride (GaN) switches, and passive PFC volume is minimized through the use of polymer multi-layer capacitors. This work is aimed at exploring new approaches for future Stirling controllers.

Christopher Barth↗
NASA NTRS2021

Development of Gallium Nitride Monolithic Microwave Integrated Circuits for Ka-Band Remote Sensing

We have been developing gallium nitride (GaN)monolithic microwave integrated circuits (MMICs) towards thegoal of implementing a single chip transceiver frontend forcloud radar arrays at Ka-band. We present our first iterationdesign, fabrication and test cycle implementation of GaN poweramplifiers (PAs), low noise amplifiers (LNAs), driver amplifier,single-pole- double and triple throw switches, and voltagecontrolled attenuator. These components are necessary forimplementing a transceiver unit cell concept with digitalcalibration capabilities to enable scalable array sizes for radarand radiometry.

Cao, Yu↗
NASA NTRS2023

Extended Temperature Operation of Isolated, Precision Gate Driver, ADuM4120

Electronics used in space missions encounter exposure to extreme temperatures and operation under wide thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. Extending the temperature range at which electronic parts can operate reliably leads to potential benefits resulting in improving reliability, reducing mass/weight, and simplifying thermal design due to elimination of thermal control elements and fewer parts count. In this work, the performance of an isolated, precision gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Power Electronics↗
NASA NTRS2014

Technology Development for 3-D Wide Swath Imaging Supporting ACE

The National Academy of Sciences Decadal Survey (DS) Aerosol-Cloud-Ecosystems Mission (ACE) aims to advance our ability to observe and predict changes to the Earth's hydrological cycle and energy balance in response to climate forcing, especially those changes associated with the effects of aerosol on clouds and precipitation. ACE is focused on obtaining measurements to reduce the uncertainties in current climate models arising from the lack in understanding of aerosol-cloud interactions. As part of the mission instrument suite, a dual-frequency radar comprised of a fixed-beam 94 gigahertz (W-band) radar and a wide-swath 35 gigahertz (Ka-band) imaging radar has been recommended by the ACE Science Working Group.In our 2010 Instrument Incubator Program project, we've developed a radar architecture that addresses the challenge associated with achieving the measurement objectives through an innovative, shared aperture antenna that allows dual-frequency radar operation while achieving wide-swath (100 kilometers) imaging at Ka-band. The antenna system incorporates 2 key technologies; a) a novel dual-band reflectorreflectarray and b) a Ka-band Active Electronically Scanned Array (AESA) feed module. The dual-band antenna is comprised of a primary cylindrical reflectorreflectarray surface illuminated by a point-focus W-band feed (compatible with a quasi-optical beam waveguide feed, such as that employed on CloudSat); the Ka-band AESA line feed provides wide-swath across-track scanning. The benefits of this shared-aperture approach include significant reductions in ACE satellite payload size, weight, and cost, as compared to a two aperture approach. Four objectives were addressed in our project. The first entailed developing the tools for the analysis and design of reflectarray antennas, assessment of candidate reflectarray elements, and validation using test coupons. The second objective was to develop a full-scale aperture design utilizing the reflectarray surface and to detail specific requirements and trades for the Ka-band AESA line feed. As part of the third objective a subscale antenna, similar to the full-scale aperture design, was developed, integrated, and flown with the Cloud Radar System during the 2014 Integrated Precipitation and Hydrology Experiment. The fourth and ongoing objective entails developing a GaN MMIC (Gallium Nitride Monolithic Microwave Integrated Circuits) power amplifier for use in the Ka-band AESA. An overview of the progress made on this project and a look ahead at the 2013 IIP (Instrument Incubator Program) award selection will be presented.

Antenna↗
NASA NTRS2019

Characterization and Failure Analysis of 650 V Enhancement-Mode GaN HEMT for Cryogenically-Cooled Power Electronics

In order to evaluate the feasibility of newly developed GaN devices in a cryogenically-cooled converter, this paper characterizes a 650 V enhancement-mode Gallium-Nitride high-electron-mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di/dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the on-resistance of the channel at cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. The ultra-fast switching speed induced high di/dt and dv/dt at cryogenic temperatures amplifies the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultra-fast switching speed are given in this paper.

Static and dynamic characterization↗
NASA NTRS1993

Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.

Choi, S. W.↗
NASA NTRS1970

Growth of single-crystal gallium nitride

Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces.

Clough, R.↗
NASA NTRS2018

Cryogenic Parametric Characterization of Gallium Nitride Switches

This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.

Gonzalez, Marcelo C.↗