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Results for “Gallium nitride (GaN) switches”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1-xN, x is the Al composition), ..beta..-phase gallium oxide (..beta..-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1-xN and ..beta..-Ga2O3. This Perspective delineates the need and process for the "electro-thermal co-design" of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRSDate not supplied

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, and noise figure. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

high power amplifier↗
NASA NTRS2022

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

Rainee N. Simons↗
NASA NTRSDate not supplied

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

High power amplifier↗
DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Solid state protective smart plug device

A wireless-controlled smart plug device and methods of use and operation, using a solid state switch to provide electrical power from an outlet to a load, and provide protection against overload, short circuit, ground, arc, or voltage surge faults. The switch includes a bidirectional semiconductor switch with two back-to-back connected transistors, such as silicon power MOSFETs, silicon insulated-gate bipolar transistors (IGBTs), silicon carbide (SiC) transistors, or gallium nitride (GaN) transistors, each configured to control the current flow from the electrical receptacle to the external electrical load.

Shen, Zheng↗
DOE OSTI2026

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS2019

Multi-Band and Multi-Function Reconfigurable Gallium Nitride Based Fully Solid-State Microwave Power Module for Cognitive Radio/Radar Platforms

This paper presents as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurable S-/X-band Gallium Nitride (GaN) based fully solid-state microwave power module (SSMPM) for the role as the transmit module in a cognitive radio (CR). The SSMPM synergistically integrates multiple amplifiers through diplexing and high power switches to enable a single SSMPM capable of functioning as both S-/X-band amplifiers for telemetry, tracking, and command (TT&C), telecommunications, and science data downlink or as X-band radar for proximity sensing onboard a planetary exploration spacecraft. Integration of an electric field shaping field plate (FP) onto the GaN high electron mobility transistors (HEMTs) in this SSMPM provides increased performance and reliability for operation in the harsh conditions of space. This SSMPM is capable of delivering saturated power (Psat) of 39 dBm (8 W continuous wave (CW)) at S-band, P(sub sat) of 43 dBm (20 W CW) at X-band, and P(sub sat) of >50 dBm (>100 W Pulsed) at X-band.

Simons, Rainee N.↗
DOE OSTI2024

Output Capacitance Loss of GaN HEMTs in Steady-State Switching

The output capacitance (C OSS ) loss, a loss produced when the device’s output capacitor is charged and discharged, has become a concern for GaN high electron mobility transistors (HEMTs) in high-frequency applications. This work presents a new, easy-to-implement method for the C OSS loss characterization based on the unclamped inductive switching (UIS) setup. As compared to prior approaches, this method involves the device’s ON-state conduction and could measure the C OSS loss in a single pulse and the steady-state switching. The C OSS loss of three types of mainstream commercial GaN HEMTs is characterized, which exhibit some common dependencies including a non-monotonic relation with the dv/dt (or resonance frequency), a linear relation with the ON-state current, a power-law relation with the peak blocking voltage, and little temperature dependence. In addition, their C OSS losses all show minimal distinctions in a single pulse and the steady-state switching, despite the increased on-resistance in the steady-state switching. Furthermore, this suggests that the traps accounting for the C OSS loss possess different de-trapping time constants as compared to the traps governing the dynamic on-resistance. Finally, a unified model is established to describe the C OSS loss of all three types of GaN HEMTs. These results provide important references for the high-frequency application of GaN HEMTs and new insights into the physical origin of their C OSS loss.1

42 ENGINEERING↗
NASA NTRS2021

Development of Gallium Nitride Monolithic Microwave Integrated Circuits for Ka-Band Remote Sensing

We have been developing gallium nitride (GaN)monolithic microwave integrated circuits (MMICs) towards thegoal of implementing a single chip transceiver frontend forcloud radar arrays at Ka-band. We present our first iterationdesign, fabrication and test cycle implementation of GaN poweramplifiers (PAs), low noise amplifiers (LNAs), driver amplifier,single-pole- double and triple throw switches, and voltagecontrolled attenuator. These components are necessary forimplementing a transceiver unit cell concept with digitalcalibration capabilities to enable scalable array sizes for radarand radiometry.

Cao, Yu↗
DOE OSTI2020

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

42 ENGINEERING↗
DOE OSTI2020

Factors and Considerations for Modeling Loss of a GaN-based Inverter

The article investigates the impacts of four often-neglected factors on the loss model of a GaN-based full-bridge inverter: parasitic capacitance of the devices, dynamics of junction temperature (Tj) under time-varying power dissipation (Ploss), case temperature estimation, and detailed considerations of the passive components. Procedures to calculate the converter loss considering the above factors are proposed and implemented. A 4.5-kW hard-switching inverter prototype using gallium nitrite (GaN) high-electron-mobility transistors is used to experimentally demonstrate the impact of each factor on the converter loss model. Furthermore, it is found that the accuracy of a converter loss model is mainly affected by the passive components at the light load condition, whereas the thermal and loss models of the active components become the major factors as the output power increases. The results show that after considering the above factors, the converter loss discrepancy between calculation and measurement can be reduced from 30.6 W (28%) to 2.5 W (less than 3%) at heavy load (Po = 4.5 kW), while at the light load condition (Po = 500 W), it is reduced from 3.9 W (28%) to 2.6 W (16%). Furthermore, the difference between simulated and measured case temperature of the GaN devices is within 6 °C.

42 ENGINEERING↗
DOE OSTI2026

A Vertical GaN-Based Neutral-Pointless Three-Level Inverter for High-Performance Automotive Traction Applications

Silicon Carbide (SiC) MOSFETs have emerged as a dominant solution for electric vehicle traction inverters because of their superior power density and efficiency compared to Silicon (Si) counterparts. However, SiC devices possess inherent switching speed limitations that constrain the maximum switching frequency and hinder further power density and efficiency improvements. To address these limitations, this paper proposes a vertical Gallium Nitride (vGaN) based X-type Neutral-Pointless (NPL.X) three-level (3L) inverter for an 800V, 200 kW traction system. Integrating 700V vGaN technology within the NPL.X 3L topology enables improved drive efficiency and higher switching frequencies, resulting in enhanced power density and output power quality. To evaluate the performance benefits, this work conducts a comprehensive loss characterization of the vGaN￾based NPL.X topology, providing a direct comparison with a SiC￾based two level (2L) inverter. The results show that the proposed vGaN-based inverter achieves superior efficiency, particularly within the low-torque regions that dominate standard automotive drive cycles. The proposed vGaN-based inverter represents a critical advancement toward high-power-density and high efficiency traction drives

Halawa, Ali [Purdue Univ., West Lafayette, IN (Uni↗
DOE OSTI2020

GaN‐based split phase transformer‐less PV inverter with auxiliary ZVT circuit

This paper explores performance enhancement of the common ground dynamic dc‐link (CGDL) inverter for single phase photovoltaic (PV) applications by a combination of gallium nitride (GaN) devices, split phase topology, coupled inductors, and zero voltage transition (ZVT) scheme. The CGDL inverter has the inherent advantage of minimised dc‐link capacitance and negligible leakage current due to the common ground configuration, but its reported efficiency was usually lower because of the higher dc‐link voltage used for the reduction of decoupling capacitance to a great extent. To solve the efficiency problem, in this study, a soft switching circuit is proposed for the first stage, while a coupled inductor integrated magnetics is incorporated in the second stage to reduce inductor loss, volume, and cost. Both of these topological improvements combined with the use of GaN devices facilitate in achieving high efficiency without compromising converter power density. Extensive experimental results are provided from a GaN based 1 kVA hardware prototype to demonstrate the superior performance of the CGDL inverter attaining a peak efficiency of 98.7% and a California Energy Commission efficiency of 98.5% at 75/50 kHz switching frequency.

Xia, Yinglai↗
DOE OSTI2023

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

42 ENGINEERING↗
DOE OSTI2020

Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. Furthermore, this device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

42 ENGINEERING↗
NASA NTRS2019

Characterization and Failure Analysis of 650 V Enhancement-Mode GaN HEMT for Cryogenically-Cooled Power Electronics

In order to evaluate the feasibility of newly developed GaN devices in a cryogenically-cooled converter, this paper characterizes a 650 V enhancement-mode Gallium-Nitride high-electron-mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di/dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the on-resistance of the channel at cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. The ultra-fast switching speed induced high di/dt and dv/dt at cryogenic temperatures amplifies the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultra-fast switching speed are given in this paper.

Static and dynamic characterization↗
NASA NTRSDate not supplied

Amplifier Output Power, Gain, Efficiency, and Bandwidth: A Comparative Study of GaN HEMT MMIC Multi-Stage Power Amplifiers versus Distributed Power Amplifiers

In this paper we present first, the results of a study conducted to investigate the microwave performance of a wideband (25-31 GHz) GaN MMIC distributed high power amplifier (HPA). Second, we compare and contrast the above performance with that of an alternate architecture that relies on two HPAs to provide contiguous 25-31 GHz coverage. The two HPAs operate across 25-28 GHz and 27-31 GHz, respectively, and can be switched in and out depending on the need at any given time. The parameters investigated includes the output power, gain, power added efficiency, bandwidth, RMS error vector magnitude for offset-QPSK, 8PSK, 16APSK, and 32 APSK waveforms, 3rd-order intermodulation distortion products, noise figure, and single sideband phase noise.

MMIC↗