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DOE OSTI2023

Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ~20-nm-thin films consisting of an amorphous HfO x host matrix interspersed with ~2-nm-wide, ~5-to-10-nm-pitch Ba-rich amorphous nanocolumns penetrating approximately two-thirds through the films. This restricts the RS to an interfacial Schottky-like energy barrier whose magnitude is tuned by ionic migration under an applied electric field. Resulting devices achieve stable cycle-to-cycle, device-to-device, and sample-to-sample reproducibility with a measured switching endurance of ≥10 4 cycles for a memory window ≥10 at switching voltages of ±2 V. Each device can be set to multiple intermediate resistance states, which enables synaptic spike-timing–dependent plasticity. The presented concept unlocks additional design variables for RS devices.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Fabrication of Tantalum and Hafnium Carbide Fibers via Forcespinning TM for Ultrahigh‐Temperature Applications

In this work, a novel method for producing ultrafine tantalum and hafnium carbide fibers using the Forcespinning TM technique via a nonhalide‐based sol‐gel process was investigated. An optimal solution viscosity range was systematically determined via rheological studies of neat PAN/DMF as a function of fiber formation. Subsequently, Forcespinning TM parameters were also systemically studied to determine the optimal rotational velocity and spinneret‐to‐collecting rod distance required for ideal fiber formation. TaC and HfC fibers were synthesized via Forcespinning TM utilizing a mixture of PAN and refractory transition metal alkoxides (i.e., tantalum (V) ethoxide and hafnium (IV) tert‐butoxide) in DMF solution based on optimal conditions determined from the neat PAN/DMF. In all instances after calcination, powder X‐ray diffraction (PXRD) and energy dispersive spectroscopy (EDS) indicated that TaC and HfC fibers were produced. TGA/DSC confirmed the chemical stability of the resulting fibers.

Lee, Harold O.↗

DOE OSTI2023

Systematic evaluation of fast neutron sensing with Cesium Hafnium Chloride

Cesium Hafnium Chloride (CHC) is a promising new scintillator for dual mode sensing of both neutrons and gamma-rays. The high chlorine content allows for both 35 Cl(n,p) 35 S and 35 Cl(n,α) 32 P reaction channels leading to reliable detection of fast neutrons. By utilizing pulse shape discrimination (PSD), these neutron interactions may be reliably separated from gamma-ray signals with a high figure-of-merit (FOM) after optimization of the PSD algorithm. Here, in this study, the PSD algorithm settings for CHC were systematically investigated using a bare 252 Cf and a lead shielded plutonium beryllium neutron source. It was found that the PSD algorithm settings affects both the FOM and the neutron detection efficiency, but a FOM as high as 4.5 for alpha particles was observed in one data processing scenario. Further, an intrinsic 5 parts per million alpha emitting contamination was observed in the sample, which we attribute to natural uranium.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2023

Infrared Signatures for Phase Identification in Hafnium Oxide Thin Films

Phase identification in HfO 2 -based thin films is a prerequisite to understanding the mechanisms stabilizing the ferroelectric phase in these materials, which hold great promise in next-generation non-volatile memory and computing technology. While grazing-incidence X-ray diffraction is commonly employed for this purpose, it has difficulty unambiguously differentiating between the ferroelectric phase and other metastable phases that may exist due to similarities in the d-spacings, their low intensities, and the overlapping of reflections. Infrared signatures provide an alternative route. However, their use in phase identification remains limited because phase control has overwhelmingly been accomplished via substituents, thereby convoluting infrared signatures between the substituent and the phase changes they induce. Herein, we report the infrared optical responses of three undoped hafnium oxide films where annealing conditions have been used to create films consisting primarily of the ferroelectric polar orthorhombic Pca2 1 , antipolar orthorhombic Pbca, and monoclinic P2 1 /c phases, as was confirmed via transmission electron microscopy (TEM), UVvisible optical properties, and electrical property measurements. Vibrational signatures acquired from synchrotron nano-Fourier transform infrared spectroscopy (nano-FTIR) are shown to be capable of differentiating between the phases in a non-destructive, rapid, and nanoscale manner. The utility of nano-FTIR is illustrated for a film exhibiting an antiferroelectric polarization response. In this sample, it is proven that this behavior results from the Pbca phase rather than the often-cited tetragonal phase. Here, by demonstrating that IRspectroscopy can unambiguously distinguish phases in this material, this work establishes a tool needed to isolate the factors dictating ferroelectric phase stability in HfO 2 -based materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Increasing Iridium Oxide Activity for the Oxygen Evolution Reaction with Hafnium Modification

Synthesis and implementation of highly active, stable, and affordable electrocatalysts for the oxygen evolution reaction (OER) is a major challenge in developing energy efficient and economically viable energy conversion devices such as electrolyzers, rechargeable metal-air batteries, and regenerative fuel cells. The current benchmark electrocatalyst for OER is based on iridium oxide (IrO x ) due to its superior performance and excellent stability. However, large scale applications using IrO x are impractical due to its low abundance and high cost. In this work, we report a highly active hafnium-modified iridium oxide (IrHf x O y ) electrocatalyst for OER. The IrHf x O y electrocatalyst demonstrated ten times higher activity in alkaline conditions (pH = 11) and four times higher activity in acid conditions (pH = 1) than a IrO x electrocatalyst. The highest intrinsic mass activity of the IrHf x O y catalyst in acid conditions was calculated as 6950 A gIrO x -1 at an overpotential (η) of 0.3 V. Combined studies utilizing operando surface enhanced Raman spectroscopy (SERS) and DFT calculations revealed that the active sites for OER are the Ir-O species for both IrO x and IrHf x O y catalysts. The presence of Hf sites leads to more negative charge states on nearby O sites, and shortening the bond lengths of Ir-O, and lowering free energies for OER intermediates to accelerate the OER process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Thermomechanical Properties of Hafnium Hydride for Radiation Shielding in Tokamak Devices

The development of effective neutron shielding materials is of paramount importance for the progression of fusion technologies with the aim of producing clean and sustainable energy for future generations. This study demonstrates the successful fabrication of a promising candidate material for shielding applications, hafnium hydride, through the powder metallurgy process. Powder metallurgy fabrication resulted in the production of 91% dense, crack-free, ε-phase HfH 2 pellets with a hydrogen-to-metal ratio of 1.89 to 2.00. Resonant ultrasound spectroscopy (RUS) was used to measure a Young’s modulus of 34.52 ± 2.70 GPa and a shear modulus of 12.25 ± 0.18 GPa. Nanoindentation techniques have been used to establish a hardness value of 4.45 ± 1.63 GPa, and a Young’s modulus of 47.8 ± 6.4 GPa was determined using Poison’s ratio from RUS. Hydrogen release was measured using thermogravimetric analysis and appeared to occur in three different regimes as the sample transitioned through the ε- and δ-phases. Heat capacity matched literature data up to 600 K, after which a rapid increase was observed due to phase transformations occurring with hydrogen loss.

Hafnium hydride↗

DOE OSTI2021

Multi-phase equation of state of ultrapure hafnium to 120 GPa

Hafnium (Hf) is an industrially important material due to its large neutron absorption cross-section and its high corrosion resistance. When subjected to high pressure, Hf phase transforms from its hexagonal close packed α-Hf phase to the hexagonal ω-Hf phase. Upon further compression, ω-Hf phase transforms to the body centered cubic β-Hf phase. In this study, the high pressure phase transformations of Hf are studied by compressing and decompressing a well-characterized Hf sample in diamond anvil cells up to 120 GPa while collecting x-ray diffraction data. The phase transformations of Hf were compared in both a He pressure transmitting medium (PTM) and no PTM over several experiments. It was found that the α-Hf to ω-Hf phase transition occurs at a higher pressure during compression and lower pressure during decompression with a helium (He) PTM compared to using no PTM. Finally, there was little difference in the ω-Hf to β-Hf phase transition pressure between the He PTM and no PTM. The equation of state was fit for all three phases of Hf and under both PTM and no-PTM.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2026

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Hafnia-based ferroelectrics hold promise to reduce energy demand for computing by enabling compute-in-memory and as non-volatile memories. The ferroelectric phase in this material system is, in part, stabilized by oxygen vacancies. While oxygen vacancies may be a necessity for phase stability, they limit device endurance through diffusion and accumulation into conducting channels. Herein, it is shown that oxygen diffusion is spatially variable within individual grains of ferroelectric hafnium zirconium oxide (HZO). Using 18 O tracers and finite difference modeling, it is shown that grain boundaries and regions near electrode interfaces allow for relatively rapid oxygen diffusion, with values as much as 10 4 larger than the grain cores. Further, the selection of electrode material affects the diffusion coefficients across all microstructural regions. HZO films in contact with TiN electrodes result in more oxygen-deficient HZO films and higher oxygen diffusion coefficients. Tungsten electrodes result in fewer vacancies and lower diffusion coefficients. Diffusion activation energy differences between the HZO with the two electrodes is reconciled by differing populations of charged and uncharged oxygen vacancies. This insight into the local vacancy populations and diffusion pathways provides a platform for designing hafnia-based films, deposition processes, and integration strategies to reduce vacancy gradients and improve performance.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Terminal and Super‐Basic Parent Imides of Hafnium

Abstract A dinuclear hafnium complex containing the parent imido ligand [(PN)(PNC)Hf=NH{μ 2 ‐K}] 2 ( 2 ) (PN − =(N‐(2‐P i Pr 2 ‐4‐methylphenyl)‐2,4,6‐Me 3 C 6 H 2 ; PNC 2− =(N‐(2‐P i Pr 2 ‐4‐methylphenyl)‐2,4,6‐CH 2 Me 2 C 6 H 2 ), was prepared by reduction of the bisazide trans‐[(PN) 2 Hf(N 3 ) 2 ] ( 1 ) with two equiv of KC 8 . Encapsulation of K + in 2 with crown‐ether or cryptand affords the first discrete salt [K(encap)][(PN)(PNC)Hf≡NH] (encap=18‐crown‐6(THF) 2 , 3 ; 2,2,2‐Kryptofix, 4 ), featuring a terminal parent imide and possessing some of the shortest Hf−N bond lengths known to date. DFT calculations revealed formation of 2 to proceed via an extremely basic monomeric nitrido, [(PN) 2 Hf≡N] − ( A ), having a computed p K BH+ of ∼57 followed by heterolytic splitting of an inert 1,2‐CH bond of a benzylic methyl group across the Hf≡N triple bond in A . An electronic structure analysis reveals A to possess a covalent Hf≡N triple bond and of super‐basic character. We also showcase reactivity of the Hf≡NH bond with various electrophiles.

Chemistry↗

DOE OSTI2022

Processing and properties of hafnium-doped tin-modified lead zirconate titanate 95/5 ceramics

Niobium (Nb)-doped lead-tin-zirconate-titanate (PSZT) ceramics near the lead-zirconate-titanate 95/5 orthorhombic AFE-rhombohedral FE morphotropic phase boundary (PSZT 13.5/81/5.5 -1.6Nb) were prepared with up to 10 mol.% of hafnium (Hf) substituted for zirconium. The ceramics were prepared by a traditional solid-state synthesis route and sintered to near full density at 1150°C for 6 h in sealed alumina crucibles with self-same material as the lead vapor source. All compositions were ~98% dense with no detectable secondary phases by X-ray diffraction. The grain size was ~3 μm for all compositions, consisting of equiaxed grains with intergranular porosity. The compositions exhibited remnant polarization values of ~32 μC/cm 2 . Depolarization by the hydrostatic pressure-induced FE-AFE phase transition occurred at 310 MPa for all compositions, resulting in a total depolarization output of 32.4 μC/cm 2 for the PSZT ceramics. Evaluation of the R3c-R3m and R3m-Pm $\bar{3}$ m phase transition temperatures by impedance spectroscopy showed temperatures on heating ranging from 86 to 92°C and 186 to 182°C, respectively, for increasing nominal Hf content. Thermal hysteresis of the phase transitions was also observed in the ceramics, with the transition temperature on cooling being 1–4°C lower. The study demonstrated that the PSZT ceramics are relatively insensitive to variations in Hf content in the range of 0 to 10 mol.%.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Swift heavy ion irradiation effects in zirconium and hafnium carbides

The behavior of microcrystalline zirconium carbide (ZrC) and hafnium carbide (HfC) was studied under highly ionizing irradiation conditions at room temperature. The induced structural modifications were characterized via synchrotron-based X-ray diffraction experiments. Unit-cell expansion and buildup of microstrain were determined across a wide fluence range and linked to chemical compositions of the target material. The observed swelling resulting from irradiation with 198 MeV Xe ions in both carbide materials is characterized by two distinct mechanisms that operate within different fluence regimes. Unit-cell expansion initially proceeds by a direct-impact behavior that reaches saturation, followed at higher fluences by a second, linear swelling regime. The overall behavior, particularly the direct-impact regime, is similar for ZrC and HfC, with a more pronounced second defect accumulation process in HfC. Swelling in ZrC shows the same two distinct mechanisms upon irradiation with 198 MeV Xe ions and 946 MeV Au ions, but swelling induced by the lower-energy ions is greater across the entire fluence series. Accounting for the difference in energy deposition density between the two irradiation conditions reveals that the first swelling mechanism (direct-impact behavior) is likely related to the formation of more simple defects. In contrast, the second damaging mechanism at higher fluences (linear increase) cannot be fully explained by the induced energy density, and swelling remains somewhat higher for the low-velocity Xe irradiation. This may suggest that more complex defects and defect clusters are responsible for this swelling regime, with either their size and/or morphology modified at different energy densities.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2024

Mechanism of the Comonomer Effect in LLDPE from Ethylene/1-Hexene Using a Quinoline-Amine Hafnium Catalyst

Polymers of ethylene and copolymers of ethylene and 1-hexene are synthesized by utilizing a single-site hafnium catalyst activated with tris(pentafluorophenyl)borane. Polymer production increases sharply as compared to the homopolymerization of ethylene with the addition of just a small amount of 1-hexene-a phenomenon known as the "comonomer effect." A mechanism behind the comonomer effect is proposed where the activation-initiation step plays the key part. When only a small fraction of the precatalyst is initially active, high molecular weight (170 000 g mol -1 , Đ 1.6) polymer chains grow, forming a physical gel structure that traps catalyst, monomer, and solvent molecules, thereby shutting down the reaction-this scenario plays out in the case of homopolymerization of ethylene. 1-Hexene, when present, slows down the chain growth, thereby lowering the molecular weight and preventing the formation of a gel, which in turn allows for more catalytic sites to be initiated; the reaction continues, resulting in a larger amount of polymer of lower molecular weight (25 000 g mol -1 ). The proposed mechanism is validated in a series of experiments where targeted variation of the activation/initiation steps is shown to produce, depending on the condition, either a small amount of high molecular weight physical gel or a large amount of low molecular weight polymer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Evaluating Use of Boron- and Hafnium-Modified Polysilazanes for Ceramic Matrix Minicomposites

In this study, the potential of polymer-derived Ceramic Matrix Composites (CMCs) is demonstrated by addition of thin ceramic coatings on Carbon Fiber (CF) bundles. Boron- and hafnium- modified polysilazane liquid precursors were synthesized and used to infiltrate the fiber bundles of CF to fabricate lab-scale Si(B)CN/CF and Si(Hf)CN/CF CMC mini-composites, respectively. The precursor-to-ceramic conversion process was achieved at 800°C with crosslinked precursor to ceramic yield of approx. 90% in Ar environment. The Si(B)CN/CF contained Si-N and B-N bonds, while Si-N and Hf-O-Si bonds were observed for Si(Hf)CN/CF sample with uniform and dense surfaces. Room-temperature tensile tests showed that the Si(Hf)CN/CF sample could reach a tensile strength of ~790 MPa and elastic modulus of 66.88 GPa among the composites. Oxidation study of the Si(Hf)CN/CF mini-composites showed higher stability compared to SiCN/CF and Si(B)CN/CF mini-composites up to 1500°C.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Machine-learned interatomic potentials by active learning: amorphous and liquid hafnium dioxide

We propose an active learning scheme for automatically sampling a minimum number of uncorrelated configurations for fitting the Gaussian Approximation Potential (GAP). Our active learning scheme consists of an unsupervised machine learning (ML) scheme coupled with a Bayesian optimization technique that evaluates the GAP model. We apply this scheme to a Hafnium dioxide (HfO 2 ) dataset generated from a "melt-quench" ab initio molecular dynamics (AIMD) protocol. Our results show that the active learning scheme, with no prior knowledge of the dataset, is able to extract a configuration that reaches the required energy fit tolerance. Further, molecular dynamics (MD) simulations performed using this active learned GAP model on 6144 atom systems of amorphous and liquid state elucidate the structural properties of HfO 2 with near ab initio precision and quench rates (i.e., 1.0 K/ps) not accessible via AIMD. The melt and amorphous X-ray structural factors generated from our simulation are in good agreement with experiment. In addition, the calculated diffusion constants are in good agreement with previous ab initio studies.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Ultraconfined terahertz phonon polaritons in hafnium dichalcogenides

The confinement of electromagnetic radiation to subwavelength scales relies on strong light–matter interactions. In the infrared and terahertz spectral ranges, phonon polaritons are commonly employed to achieve deeply subdiffractional light confinement, with such optical modes offering much lower losses in comparison to plasmon polaritons. Among these, hyperbolic phonon polaritons in anisotropic materials offer a promising platform for light confinement. Here we report on ultraconfined phonon polaritons in hafnium-based dichalcogenides with confinement factors exceeding λ 0 /250 in the terahertz spectral range. This extreme light compression within deeply subwavelength thin films is enabled by the large magnitude of the light–matter coupling strength in these compounds and the natural hyperbolicity of HfSe 2 . Our findings emphasize the role of light–matter coupling for polariton confinement, which for phonon polaritons in polar dielectrics is dictated by the transverse–longitudinal optical phonon energy splitting. Our results demonstrate transition-metal dichalcogenides as an enabling platform for terahertz nanophotonic applications.

Kowalski, Ryan A. [Vanderbilt Univ., Nashville, TN↗

DOE OSTI2020

Compositional dependence of linear and nonlinear optical response in crystalline hafnium zirconium oxide thin films

Composition dependence of second harmonic generation, refractive index, extinction coefficient, and optical bandgap in 20 nm thick crystalline Hf 1– x Zr x O 2 (0 ≤ x ≤ 1) thin films is reported here. The refractive index exhibits a general increase with increasing ZrO 2 content with all values within the range of 1.98–2.14 from 880 nm to 400 nm wavelengths. A composition dependence of the indirect optical bandgap is observed, decreasing from 5.81 eV for HfO 2 to 5.17 eV for Hf 0.4 Zr 0.6 O 2 . The bandgap increases for compositions with x > 0.6, reaching 5.31 eV for Hf 0.1 Zr 0.9 O 2 . Second harmonic signals are measured for 880 nm incident light. The magnitude of the second harmonic signal scales with the magnitude of the remanant polarization in the composition series. Film compositions that display near zero remanent polarizations exhibit minimal second harmonic generation while those with maximum remanent polarization also display the largest second harmonic signal. The results are discussed in the context of ferroelectric phase assemblage in the hafnium zirconium oxide films and demonstrate a path toward a silicon-compatible integrated nonlinear optical material.

36 MATERIALS SCIENCE↗

DOE OSTI2022

A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance

Ferroelectric hafnium oxides are poised to impact a wide range of microelectronic applications owing to their superior thickness scaling of ferroelectric stability and compatibility with mainstream semiconductors and fabrication processes. For broad-scale impact, long-term performance and reliability of devices using hafnia will require knowledge of the phases present and how they vary with time and use. In this Perspective article, the importance of phases present on device performance is discussed, including the extent to which specific classes of devices can tolerate phase impurities. Following, the factors and mechanisms that are known to influence phase stability, including substituents, crystallite size, oxygen point defects, electrode chemistry, biaxial stress, and electrode capping layers, are highlighted. Herein, discussions will focus on the importance of considering both neutral and charged oxygen vacancies as stabilizing agents, the limited biaxial strain imparted to a hafnia layer by adjacent electrodes, and the strong correlation of biaxial stress with resulting polarization response. Areas needing additional research, such as the necessity for a more quantitative means to distinguish the metastable tetragonal and orthorhombic phases, quantification of oxygen vacancies, and calculation of band structures, including defect energy levels for pure hafnia and stabilized with substituents, are emphasized.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films

The influence of biaxial stress on the maximum and remanent polarizations of 10 nm thick hafnium zirconium oxide thin films in metal–ferroelectric–metal capacitor structures has been quantified. In the as-prepared state with a nominal biaxial tensile strain of 0.20% and no applied extrinsic stress, remanent and maximum polarizations of 7.6 and 13.1 μC/cm 2 , respectively, were measured using a 2 MV/cm applied electric field. Reducing the intrinsic strain by 0.111% through the application of a compressive uniaxial stress results in a decrease in the remanent and maximum polarizations to 6.8 and 12.2 μC/cm 2 , respectively. Here, the polarization dependence on strain is nearly linear between these values. The observed variation in polarization with strain is consistent with strain impacting ferroelastic switching whereby in-plane tension increases the fraction of the short polar axis orienting out-of-plane, hence increasing out-of-plane polarization. In contrast, reducing the in-plane strain through compression results in an increase in the fraction of the long non-polar axis orienting out-of-plane, thereby decreasing out-of-plane polarization.

36 MATERIALS SCIENCE↗