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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

Wu, Jiin C.↗

Faster Hall-Effect Current-Measuring Circuit

Current-measuring circuit operates on Hall-effect-sensing and magnetic-field-nulling principles similar to those described in article, "Nulling Hall-Effect Current-Measuring Circuit" (LEW-15023), but simpler and responds faster. Designed without feedback loop, and analog pulse-width-modulated output indicates measured current. Circuit measures current at frequency higher than bandwidth of its Hall-effect sensor.

Sullender, Craig C.↗

Diverse magnetic phase diagram and anomalous Hall effect in antiferromagnetic LuMn 6⁢ Sn 6

The interactions between conduction electrons and magnetism can significantly enhance the Hall signal, a phenomenon known as the anomalous Hall effect (AHE). While the AHE is generally not expected in antiferromagnets, a large AHE is observed in certain antiferromagnets with noncollinear spin textures and nonvanishing Berry curvature. In this work, we present a rich temperature and magnetic phase diagram with eight distinct magnetic phases for the antiferromagnetic kagome compound LuMn 6 Sn 6 . The Hall effect analysis in LuMn 6 Sn 6 reveals both intriguing physical phenomena and methodological challenges. In the coplanar canted antiferromagnetic phase, we observe an AHE, which likely originates from the intrinsic effects. At low temperatures, upon entering the ferromagnetic phase, the AHE sharply increases and exceeds the conventional limits expected from intrinsic mechanisms. We also demonstrate the limitations of standard experimental methods in extracting the topological contribution to the Hall effect data. In particular, we show that accounting for magnetoresistance anisotropy helps reduce spurious contribution that can mimic topological Hall signals, although it does not fully resolve it. Furthermore, these shortcomings in current approaches in partitioning the Hall response necessitate new tools to interpret transport results in complex magnetic materials such as LuMn 6 Sn 6 .

Anomalous Hall effect↗

One Million Newton-Second Duration Test of a 600 Watt Hall Effect Thruster Fueled By Xenon

A Hall Effect Thruster fueled by xenon was duration tested for7,198 hours at NASA’s Glenn Research Center.The thruster generated 1 million Newton-seconds of total impulse before the test was terminated voluntarily. Thrust, flow rate, and many other parameters were tracked continuously. Over 98.5% of the test was conducted at a single operating point, where the discharge power was 600 W, mean thrust was 39 mN and mean specific impulse was 1500 s. The shape of the discharge channel was measured via laser profilometery. The shape changed considerably over the course of the test, due to ion sputtering. However, the standard deviation of the thrust and specific impulse measurements at the nominal operating point was less than 1%. Evolution of the plasma plume was measured with a Faraday probe mounted upon a rotating arm. Plume divergence decreased over the course of the test

Electric Propulsion↗

Microscopic Theory of Nonlinear Hall Effect in Three-Dimensional Magnetic Systems

Abstract Nonlinear Hall effect (NLHE) has been detected in various of condensed matter systems. Unlike linear Hall effect, NLHE may exist in physical systems with broken inversion symmetry in crystals. On the other hand, real space spin texture may also break inversion symmetry and result in NLHE. We employ the Feynman diagrammatic technique to calculate non-linear Hall conductivity (NLHC) in three-dimensional magnetic systems. The results connect NLHE with the physical quantity of emergent electrodynamics which originates from the magnetic texture. The leading order contribution of NLHC, χabb , is proportional to the emergent toroidal moment T a e , which reflects how the spin textures wind in three dimensions.

Hou 侯, Wen-Tao 文涛↗

Giant coercivity and enhanced intrinsic anomalous Hall effect at vanishing magnetization in a compensated kagome ferrimagnet

Ferrimagnets that can be driven to magnetic compensation show promise for use in spintronics as they exhibit a finite anomalous Hall effect at zero magnetic field without having a substantial magnetic moment. Compensated ferrimagnet spintronic devices with both a large anomalous Hall effect and a high coercivity would be simultaneously easy to read and difficult to erase. The kagome ferrimagnet TbMn 6 Sn 6 has been reported to host a large intrinsic anomalous Hall effect. Here, we demonstrate that doping the Mn sites with Cr drives the system toward magnetic compensation. For nearly compensated compositions at low temperatures, giant coercive fields exceeding 14 T are observed. Additionally, Cr doping markedly enhances the intrinsic anomalous Hall effect, which can be attributed to a shift in the Fermi level. Our results extend the range of unique magnetic states observed in kagome materials, demonstrating that chemical doping is an effective strategy to tune and realize these states.

DeStefano, Jonathan M. [Univ. of Washington, Seatt↗

Enhancing anomalous Hall effect with suppressed ferromagnetism in the SrTiO 3 -confined bilayer heterostructure of ultrathin SrRuO 3 and SrIrO 3

Ferromagnetism is an essential ingredient for anomalous Hall effect. SrRuO 3 is a representative ferromagnetic oxide that exhibits anomalous Hall effect even down to the monolayer confinement limit. Paramagnetic metal SrIrO 3 , on the other hand, becomes an antiferromagnetic insulator when confined to a monolayer. Here, in this study, we show that, by forming a confined bilayer structure of SrRuO 3 and SrIrO 3 monolayers with SrTiO 3 spacers, the anomalous Hall effect is significantly enhanced while the ferromagnetism as well as the perpendicular magnetic anisotropy are suppressed. These effects originate from interfacial Ru–Ir hybridization that modifies the electronic structure in the vicinity of the Fermi level. Our work demonstrates that confined bilayer heterostructure is an useful design for exploring the synergistic combination of interfacial coupling and quantum confinement of complex oxides.

anomalous hall effect↗

Controlling the orbital Hall effect in gapped bilayer graphene in the terahertz regime

We study the orbital Hall effect (OHE) in the AC regime using bilayer graphene (BLG) as a prototypical material platform. While the unbiased BLG has gapless electronic spectra, applying a perpendicular electric field creates an energy band gap that can be continuously tuned from zero to high values. By exploiting this flexibility, we demonstrate the ability to control the behavior of AC orbital Hall conductivity. Particularly, we demonstrate that the orbital Hall conductivity at the neutrality point changes its signal at a critical frequency, the value of which is proportional to the perpendicular electric field. For BLG with narrow band gaps, the active frequency region for the AC OHE may extend to a few terahertz, which is experimentally accessible with current technologies. We also consider the introduction of a perpendicular magnetic field in the weak-coupling regime using first-order perturbation theory to illustrate how the breaking of time-reversal symmetry enables the emergence of the AC charge Hall effect in the charge-doped situation and modifies the AC orbital Hall conductivity. Our calculations suggest that BLG with narrow band gaps is a practical candidate for investigating time-dependent orbital angular momentum transport. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗

Hall-Effect Thruster Utilizing Bismuth as Propellant

A laboratory-model Hall-effect spacecraft thruster was developed that utilizes bismuth as the propellant. Xenon was used in most prior Hall-effect thrusters. Bismuth is an attractive alternative because it has a larger atomic mass, a larger electron-impact-ionization cross-section, and is cheaper and more plentiful.

Szabo, James↗

Hall Effect Thruster Plume Contamination and Erosion Study

The objective of the Hall effect thruster plume contamination and erosion study was to evaluate the impact of a xenon ion plume on various samples placed in the vicinity of a Hall effect thruster for a continuous 100 hour exposure. NASA Glenn Research Center was responsible for the pre- and post-test evaluation of three sample types placed around the thruster: solar cell cover glass, RTV silicone, and Kapton(R). Mass and profilometer), were used to identify the degree of deposition and/or erosion on the solar cell cover glass, RTV silicone, and Kapton@ samples. Transmittance, reflectance, solar absorptance, and room temperature emittance were used to identify the degree of performance degradation of the solar cell cover glass samples alone. Auger spectroscopy was used to identify the chemical constituents found on the surface of the exposed solar cell cover glass samples. Chemical analysis indicated some boron nitride contamination on the samples, from boron nitride insulators used in the body of the thruster. However, erosion outweighted contamination. All samples exhibited some degree of erosion. with the most erosion occurring near the centerline of the plume and the least occurring at the +/- 90 deg positions. For the solar cell cover glass samples, erosion progressed through the antireflective coating and into the microsheet glass itself. Erosion occurred in the solar cell cover glass, RTV silicone and Kapton(R) at different rates. All optical properties changed with the degree of erosion, with solar absorptance and room temperature emittance increasing with erosion. The transmittance of some samples decreased while the reflectance of some samples increased and others decreased. All results are consistent with an energetic plume of xenon ions serving as a source for erosion.

Jaworske, Donald A.↗

Intrinsic even-odd thickness-driven anomalous Hall effect in epitaxial MnBi2⁢Te4 thin films

We demonstrate precise control of magnetism in MnBi2⁢Te4 thin films through careful synthesis by molecular beam epitaxy, achieving minimal defects and accurate layer thickness control. By optimizing Mn-Bi-Te ratios and growth temperatures, we minimize detrimental self-doping effects and accurately target integer-layer films. X-ray diffraction and reflectivity provide quantitative measures of film quality and thickness. When these macroscale probes of structure and thickness are integrated with magnetotransport measurements, a striking even-odd layer dependence of the anomalous Hall effect is revealed. Odd-layer films exhibit a large hysteresis up to the Néel temperature (∼25K), consistent with noncompensated antiferromagnetism, while even-layer films show minimal response, as expected for an antiferromagnet. The sign of the anomalous Hall effect exhibits a sign reversal for intrinsic magnetism versus magnetism associated with defects. This work identifies critical factors for inducing pure, noncompensated ferromagnetism and reveals the characteristics of the intrinsic anomalous Hall effect in MnBi2⁢Te4, which together is a step toward realizing the zero-field quantum anomalous Hall effect in topological materials.

Mallick, Deb [ORNL] (ORCID:000900005806411X)↗

Magnetic field evolution in white dwarfs: The hall effect and complexity of the field

We calculate the evolution of the magnetic fields in white dwarfs, taking into account the Hall effect. Because this effect depends nonlinearly upon the magnetic field strength B, the time dependences of the various multipole field components are coupled. The evolution of the field is thus significantly more complicated than has been indicated by previous investigations. Our calculations employ recent white dwarf evolutionary sequences computed for stars with masses 0.4, 0.6, 0.8, and 1.0 solar mass. We show that in the presence of a strong (up to approximately 10(exp 9) G) internal toroidal magnetic field; the evolution of even the lowest order poloidal modes can be substantially changed by the Hall effect. As an example, we compute the evolution of an initially weak quadrupole component, which we take arbitrarily to be approximately 0.1%-1% of the strength of a dominant dipole field. We find that coupling provided by the Hall effect can produce growth of the ratio of the quadrupole to the dipole component of the surface value of the magnetic field strength by more than a factor of 10 over the 10(exp 9) to 10(exp 10) year cooling lifetime of the white dwarf. Some consequences of these results for the process of magnetic-field evolution in white dwarfs are briefly discussed.

Muslimov, A. G.↗

Sub-kW Class Hall-Effect Thruster Power Processing Unit for Wide Output Range Applications

The National Aeronautics and Space Administration (NASA) Small Spacecraft Electric Propulsion (SSEP) project is maturing high-propellant throughput sub-kilowatt Hall-effect thruster technologies to enable small spacecraft deep space science and exploration missions with high delta-v requirements. In support of this effort, development of a power processing unit (PPU) capable of providing discharge power of up to 1 kW continues to be pursued at the NASA Glenn Research Center (GRC). Previous reported work included a successful integrated test of a scalable, modular breadboard discharge power supply with the NASA-H64M laboratory model Hall-effect thruster and presentation of notional designs for the various auxiliary power supplies needed for thruster operation. Since that time, auxiliary power supply designs have been completed and fabricated, with the cathode heater and keeper power supplies being successfully tested with a hollow cathode assembly (HCA) in the NASA GRC Vacuum Facility 56 (VF-56). The desire for a lower mass, higher efficiency, and more versatile PPU to maximize performance of power and mass-limited small spacecraft has led to the exploration of a discharge power supply based on a series-parallel (LCC) resonant topology. This topology has enabled the discharge power supply to operate over a wider output range at switching frequencies 4-5 times higher than previous design iterations. Simulation models of the topology have been developed and a breadboard of the topology has been fabricated and evaluated on both resistive loads and an integrated Hall thruster test. This paper will present collected performance and integrated test data from both the fabricated auxiliary and resonant discharge power supplies. Advantages of the resonant converter architecture over more traditional pulse-width modulated (PWM) techniques in Hall-effect thruster discharge power supply applications will also be described.

electric propulsion↗

Sub-kW Class Hall-Effect Thruster Power Processing Unit for Wide Output Range Applications

The National Aeronautics and Space Administration (NASA) Small Spacecraft Electric Propulsion (SSEP) project is maturing high-propellant throughput sub-kilowatt Hall-effect thruster technologies to enable small spacecraft deep space science and exploration missions with high delta-v requirements. In support of this effort, development of a power processing unit (PPU) capable of providing discharge power of up to 1 kW continues to be pursued at the NASA Glenn Research Center (GRC). Previous reported work included a successful integrated test of a scalable, modular breadboard discharge power supply with the NASA-H64M laboratory model Hall-effect thruster and presentation of notional designs for the various auxiliary power supplies needed for thruster operation. Since that time, auxiliary power supply designs have been completed and fabricated, with the cathode heater and keeper power supplies being successfully tested with a hollow cathode assembly (HCA) in the NASA GRC Vacuum Facility 56 (VF-56). The desire for a lower mass, higher efficiency, and more versatile PPU to maximize performance of power and mass-limited small spacecraft has led to the exploration of a discharge power supply based on a series-parallel (LCC) resonant topology. This topology has enabled the discharge power supply to operate over a wider output range at switching frequencies 4-5 times higher than previous design iterations. Simulation models of the topology have been developed and a breadboard of the topology has been fabricated and evaluated on both resistive loads and an integrated Hall thruster test. This paper will present collected performance and integrated test data from both the fabricated auxiliary and resonant discharge power supplies. Advantages of the resonant converter architecture over more traditional pulse-width modulated (PWM) techniques in Hall-effect thruster discharge power supply applications will also be described.

electric propulsion↗

Automated High-Temperature Hall-Effect Apparatus

Automated apparatus takes Hall-effect measurements of specimens of thermoelectric materials at temperatures from ambient to 1,200 K using computer control to obtain better resolution of data and more data points about three times as fast as before. Four-probe electrical-resistance measurements taken in 12 electrical and 2 magnetic orientations to characterize specimens at each temperature. Computer acquires data, and controls apparatus via three feedback loops: one for temperature, one for magnetic field, and one for electrical-potential data.

Parker, James B.↗