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At least 37 records · Page 2

Nonequilibrium noise of InSb hot electron bolometers

Noise spectra of a InSb hot electron bolometer at 4.2 K bath temperature are measured and compared with theory. Bolometer phonon noise and Johnson noise are included in the analysis. A nonequilibrium Johnson noise model, due to Mather, gives good agreement with experiment over the frequency range 0.2-1.1 MHz. This model incorporates an elevated electron gas temperature and electrothermal feedback from the bias supply.

Brown, E.↗

Whistler Solitons in Plasma with Anisotropic Hot Electron Admixture

The longitudinal and transverse modulation instability of whistler waves in plasma, with a small admixture of hot anisotropic electrons, is discussed. If the hot particles temperature anisotropy is positive, it is found that, in such plasma, longitudinal perturbations can lead to soliton formation for frequencies forbidden in cold plasma. The soliton is enriched by hot particles. The frequency region unstable to transverse modulation in cold plasma in the presence of hot electrons is divided by stable domains. For both cases the role of hot electrons is more significant for whistlers with smaller frequencies.

Khazanov, G. V.↗

Whistler Solitons in Plasma with Anisotropic Hot Electron Admixture

The longitudinal and transverse modulation instability of whistler waves in plasma, with a small admixture of hot anisotropic electrons, is discussed. If the hot particles temperature anisotropy is positive, it is found that, in such plasma, longitudinal perturbations can lead to soliton formation for frequencies forbidden in cold plasma. The soliton is enriched by hot particles. The frequency region unstable to transverse modulation in cold plasma in the presence of hot electrons is divided by stable domains. For both cases the role of hot electrons is more significant for whistlers with smaller frequencies.

Khazanov, G. V.↗

Superconducting Hot-Electron Submillimeter-Wave Detector

A superconducting hot-electron bolometer has been built and tested as a prototype of high-sensitivity, rapid-response detectors of submillimeter-wavelength radiation. There are diverse potential applications for such detectors, a few examples being submillimeter spectroscopy for scientific research; detection of leaking gases; detection of explosive, chemical, and biological weapons; and medical imaging. This detector is a superconducting-transition- edge device. Like other such devices, it includes a superconducting bridge that has a low heat capacity and is maintained at a critical temperature (T(sub c)) at the lower end of its superconducting-transition temperature range. Incident photons cause transient increases in electron temperature through the superconducting-transition range, thereby yielding measurable increases in electrical resistance. In this case, T(sub c) = 6 K, which is approximately the upper limit of the operating-temperature range of silicon-based bolometers heretofore used routinely in many laboratories. However, whereas the response speed of a typical silicon- based laboratory bolometer is characterized by a frequency of the order of a kilohertz, the response speed of the present device is much higher characterized by a frequency of the order of 100 MHz. For this or any bolometer, a useful figure of merit that one seeks to minimize is (NEP)(tau exp 1/2), where NEP denotes the noise-equivalent power (NEP) and the response time. This figure of merit depends primarily on the heat capacity and, for a given heat capacity, is approximately invariant. As a consequence of this approximate invariance, in designing a device having a given heat capacity to be more sensitive (to have lower NEP), one must accept longer response time (slower response) or, conversely, in designing it to respond faster, one must accept lower sensitivity. Hence, further, in order to increase both the speed of response and the sensitivity, one must make the device very small in order to make its heat capacity very small; this is the approach followed in developing the present device.

Karasik, Boris↗

SUBMM wave superconduction hot-electron direct detectors

Recently, we have presented a concept for a hot-electron direct detector (HEDD) capable of counting single millimeter-wave photons. Such a detector meets the needs of future space far-infrared applications and can be used for background-limited detector arrays on missions like SPIRIT, 10-m filled aperture telescope, SAFIR, and SPECS.

hot-electron electron-phonon direct detectors subm↗

Very Long-Wavelength GaAs/AlxGa1-xAs Infrared Hot Electron Transistor

We have demonstrated a bound to continuum state GaAs/AlxGa1-xAs infrared hot electron transistor which has a peak response at (sub =16.3). This device utilizes a bound-to-continuum quantum well infrared photodetector as a photosensitive emitter and a wide AlxGa1-xAs barrier between the base and the collector as an energy discriminating filter.

infrared hot electron transistor photosensitive em↗

Very Long Wavelength Intersubband Infrared Hot Electron Transistor

We have demonstrated the first very long wavelength (16 micrometers) infrared hot electron transistor (IHET). This device utilizes a bound to continuum GaAs/A1_xGa_(1- x)As (X=0.11) quantum well infrared photodetector (QWIP) as a photosensitive emitter, a wide quantum well as a base, and a thick A1_xGa_(1-x)As (X=0.11) barrier between the base and the collector as an energy discriminating filter. This energy filter blocks the lower energy electrons, which drain through the base while higher energy photo electrons pass to the collector. Therefore, the detectivity of the device at the collector is much higher than the detectivity at the emitter.

quantum↗

Electron-cyclotron maser instability caused by hot electrons

The electron-cyclotron maser instability is studied for energetic electrons with a loss-cone distribution. The instability can occur at all angles of propagation for a wide range of parameters. The growth rate is significantly reduced by the presence of a population of cold electrons, and the instability can be suppressed if the density of the cold electrons is sufficiently large and the temperature of the energetic electrons is not too high.

Wong, H. K.↗

Fabrication of an Aluminum Based Hot Electron Mixer for Terahertz Applications

Aluminum based diffusion cooled hot electron bolometers (HEB) mixers, predicted to have better noise, bandwidth and to require less LO power than Nb based diffusion cooled HEBs, have been fabricated. Preliminary DC tests were performed. The bolometer elements consisted of short (0.1 to 0.3 micron), narrow (0.08 to 0. 15 micron) and thin (11 nm) aluminum wires connected to large contact pads consisting of a novel trilayer Al/Ti/Au. The patterns were defined by electron beam lithography and the metal deposition involved a double angle process, the Aluminum wires being deposited straight on and the pads being deposited at a 45 degree angle without breaking vacuum. The Al/Ti/Au trilayer was developed to provide a way of making contact between the aluminum wire and the gold antenna. The Titanium layer acts as a diffusion barrier to avoid damage of the Aluminum contact and bolometer wire and to lower the transition temperature of the pads to below that of the bolometer wire. The Au layer avoids the formation of an oxide on the Ti layer and provides good electrical contact to the IF/antenna structure. The resistance of the bolometers as a function of temperature was measured. It is clear that below the transition temperature of the wire (1.8K) but above the transition temperature of the contact pads (0.6K), the proximity effect drives most of the bolometer wire normal, causing a very broad transition. This effect should not affect the performance of the bolometers since they will be operated at a temperature below the TC of the pads. This is evident from the IV characteristics measured at 0.3K. RF characterization tests will begin shortly.

Echternach, P. M.↗

Hot-Electron Bolometer Mixers on Silicon-on-Insulator Substrates for Terahertz Frequencies

A terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.

bolometer↗

Large Bandwidth and Low Noise in a Diffusion-Cooled Hot-Electron Bolometer Mixer

X Heterodyne measurements have been made at 533 GHz using a novel superconducting hot-electron bolometer in a waveguide mixer. The bolometer is a 0.3 ??ong niobium microbridge with T c =(approx. equal to)5K. The short length ensures that electron diffusion dominates over electron-phonon interactions as the electron cooling mechanism, which should allow heterodyne detection with intermediate frequencies (if{italics})) of several GHz. A Y-factor response of 1.15dB has been obtained at an if(italics) of 1.4 GHz with 77k and 295k loads, indicating a receiver noise temperature of 650 k DSB. The -3 dB rolloff in the if(italics) response occurs at 1.7 GHz.

Heterodyne↗

Submicron-Long HTS Hot-Electron Mixers

We have measured the device length and temperature dependence of the intermediate frequency (IF) bandwidth and noise of hot-electron bolometert (HEB) mixers made from a high-T***subc*** superconductor.

hot-electron↗

Low-Noise Wide Bandwith, Hot Electron Bolometer Mixers for Submillimeter Wavelengths

Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.

Bolometer Mixers↗

Diffusion-Cooled Tantalum Hot-Electron Bolometer Mixers

A batch of experimental diffusion-cooled hot-electron bolometers (HEBs), suitable for use as mixers having input frequencies in the terahertz range and output frequencies up to about a gigahertz, exploit the superconducting/normal-conducting transition in a thin strip of tantalum. The design and operation of these HEB mixers are based on mostly the same principles as those of a prior HEB mixer that exploited the superconducting/normal- conducting transition in a thin strip of niobium and that was described elsewhere.

Skalare, Anders↗