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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Effect of Interface Structure on the Hydrophobicity, Mechanical and Optical Properties of HfO2/Mo/HfO2 Multilayer Films

We report on the super-hydrophobicity and tunable and optical and mechanical properties of transparent HfO2(50 nm)/Mo(20 nm)/HfO2(50 nm) multilayer films facilitated by engineering the ceramic-metal interface microstructure. A comparative study of nano-columnar and glassy (dense) structured HfO2/Mo/HfO2 multilayer films demonstrate the remarkable effect of interface structure on their hydrophobicity and mechanical properties. The nano-columnar structured multilayer films exhibit the dominance over the glassy structured stack in terms of their enhanced characteristics, namely the mechanical characteristics, anti-reflection behavior, visible transmittance, and hydrophobicity. While hydrophobicity is derived from the combined effect of hierarchical surface roughness and nano-columnar structure of the top and bottom Hf-oxide ceramic layers, the enhanced mechanical response is derived from the columnar structure of Mo metallic interlayer vertically aligned with overall multilayer stack. The combination of super-hydrophobicity and enhanced mechanical properties of optically transparent HfO2/Mo/HfO2 multilayer films through HfO2-Mo interface structure control as demonstrated in this work may provide a pathway to further tune the efficiency and in the optimization of architectures for energy-saving applications.

EFFICIENT GLASS WINDOWS, ELECTRICAL-PROPERTIES, TH↗
DOE OSTI2020

Thermodynamics of monoclinic and tetragonal hafnium dioxide (HfO 2 ) at ambient pressure

Accurate and precise thermodynamic models of oxide compounds and their phases are important for calculating the phase stability of oxide materials. We develop and use a coupled quantum mechanical and molecular dynamics approach to create thermodynamic models of hafnia (HfO2) polymorphs from 0 K to 3000 K at ambient pressure. The approach is based on the quasi-harmonic approximation below the Debye temperature and on ab-initio molecular dynamics calculations above the Debye temperature to predict constant pressure heat capacities (C-p). A Bayesian model provides interpolated values between these regimes. As a case study, we develop thermodynamic models of monoclinic and tetragonal HfO2 polymorphs. The predicted heat capacities are in excellent agreement with experiment, and the predicted temperature of the monoclinic to tetragonal phase transition (2173 K) is in good agreement with the experimental value (2078K). These results provide a comprehensive and accurate thermodynamic model of the monoclinic and tetragonal phases of hafnia on a broad range of temperatures and can serve as input to CALPHAD assessment of multi-component hafnia-based phase diagrams.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to overcome the existing problems of perovskite-based integrated ferroelectrics. However, both the control of ferroelectricity in doped-HfO2 and the direct characterization at the nanoscale of ferroelectric phenomena, are increasingly difficult to achieve. The main limitations are imposed by the inherent intertwining of ferroelectric and dielectric properties, the role of strain, interfaces and electric field-mediated phase, and polarization changes. In this work, using Si-doped HfO2 as a material system, we performed a correlative study with four scanning probe techniques for the local sensing of intrinsic ferroelectricity on the oxide surface. Putting each technique in perspective, we demonstrated that different origins of spatially resolved contrast can be obtained, thus highlighting possible crosstalk not originated by a genuine ferroelectric response. By leveraging the strength of each method, we showed how intrinsic processes in ultrathin dielectrics, i.e., electronic leakage, existence and generation of energy states, charge trapping (de-trapping) phenomena, and electrochemical effects, can influence the sensed response. We then proceeded to initiate hysteresis loops by means of tip-induced spectroscopic cycling (i.e., “wake-up”), thus observing the onset of oxide degradation processes associated with this step. Finally, direct piezoelectric effects were studied using the high pressure resulting from the probe’s confinement, noticing the absence of a net time-invariant piezo-generated charge. Our results are critical in providing a general framework of interpretation for multiple nanoscale processes impacting ferroelectricity in doped-hafnia and strategies for sensing it.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Domain-Matching Epitaxy of Ferroelectric Hf 0.5 Zr 0.5 O 2 (111) on La 2/3 Sr 1/3 MnO 3 (001)

Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf 0.5 Zr 0.5 O 2 (111) films were epitaxially stabilized on La 2/3 Sr 1/3 MnO 3 (001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. In this work, to gain insight into the epitaxy mechanism, scanning transmission electron microscopy characterization of the interface was performed, revealing arrays of dislocations with short periodicities. Additionally, these observed periodicities agree with those expected for domain matching epitaxy, indicating that this unconventional mechanism could be the prevailing factor in the stabilization of ferroelectric Hf0.5Zr0.5O2 with (111) orientation in the epitaxial Hf 0.5 Zr 0.5 O 2 (111)/La 2/3 Sr 1/3 MnO 3 (001)heterostructure.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Local Electric Field Effects on Water Dissociation in Bipolar Membranes Studied Using Core–Shell Catalysts

The local electric field strength is thought to affect the rate of water dissociation (WD) in bipolar membranes (BPMs) at the catalyst–nanoparticle surfaces. Here, we study core–shell nanoparticles, where the core is metallic, semiconducting, or insulating, to understand this effect. The nanoparticle cores were coated with a WD catalyst layer (TiO2 or HfO2) via atomic layer deposition (ALD), and the morphology was imaged with transmission electron microscopy. Irrespective of the core material, these core–shell catalysts displayed comparable WD overpotentials at optimal mass loading, despite the hypothesized differences in the electric field strength across the catalyst particle suggested by continuum electrostatic simulations. Substantial atomic interdiffusion between the core and shell was ruled out by X-ray absorption spectroscopy, X-ray photoelectron spectroscopy, and diffuse reflectance optical measurements. However, the optimal mass loading of catalyst was roughly 1 order of magnitude higher for the conductive and high dielectric core materials than for the low dielectric insulating cores. These findings are consistent with the hypothesis that electric field screening within the core material focuses the electric field drop between particles such that larger film thicknesses can be tolerated. Collectively, these data support the idea that it is the local electric field at the molecular level that controls proton-transfer rates and that the metal core/dielectric-shell constructs introduced here modulate that field. Further materials and synthetic design may enable optimization of the electric field strength across the proton-transfer trajectory at the material surface.

Sarma, Prasad V↗
DOE OSTI2022

Vibrational fingerprints of ferroelectric HfO 2

Hafnia (HfO 2 ) is a promising material for emerging chip applications due to its high-κ dielectric behavior, suitability for negative capacitance heterostructures, scalable ferroelectricity, and silicon compatibility. The lattice dynamics along with phononic properties such as thermal conductivity, contraction, and heat capacity are under-explored, primarily due to the absence of high quality single crystals. Herein, we report the vibrational properties of a series of HfO 2 crystals stabilized with yttrium (chemical formula HfO2: xY, where x = 20, 12, 11, 8, and 0%) and compare our findings with a symmetry analysis and lattice dynamics calculations. We untangle the effects of Y by testing our calculations against the measured Raman and infrared spectra of the cubic, antipolar orthorhombic, and monoclinic phases and then proceed to reveal the signature modes of polar orthorhombic hafnia. This work provides a spectroscopic fingerprint for several different phases of HfO 2 and paves the way for an analysis of mode contributions to high-κ dielectric and ferroelectric properties for chip technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Phase diagrams and polarization reversal in nanosized Hf x Zr 1–x O 2–y

To describe the polar properties of nanosized Hf x Zr 1–x O 2–y , we evolve the “effective” Landau–Ginzburg–Devonshire (LGD) model based on the parametrization of the Landau expansion coefficients for polar and antipolar orderings. We have shown that the effective LGD model can predict the influence of screening conditions and size effects on phase diagrams, polarization reversal, and structural properties of nanosized Hf x Zr 1–x O 2–y of various shapes and sizes. To verify the model, we use the available experimental results for Hf x Zr 1–x O 2 thin films and oxygen-deficient HfO2–y nanoparticles prepared under different annealing conditions. X-ray diffraction, which was used to determine the phase composition of the HfO 2–y nanoparticles, revealed the formation of a ferroelectric orthorhombic phase in them. Micro-Raman spectroscopy was used to explore the correlation of lattice dynamics and structural changes that depend on the oxygen vacancy concentration in the HfO 2–y nanoparticles. Since our approach allows us to determine the conditions (shape, sizes, Zr content, and/or oxygen vacancy amount) for which nanosized Hf x Zr 1–x O 2–y are ferroelectric or antiferroelectric, we hope that the obtained results are useful for creation of next generation Si-compatible ferroelectric gate oxide nanomaterials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Polarization and domains in wurtzite ferroelectrics: Fundamentals and applications

The 2019 report of ferroelectricity in (Al,Sc)N [Fichtner et al., J. Appl. Phys. 125, 114103 (2019)] broke a long-standing tradition of considering AlN the textbook example of a polar but non-ferroelectric material. Combined with the recent emergence of ferroelectricity in HfO2-based fluorites [Böscke et al., Appl. Phys. Lett. 99, 102903 (2011)], these unexpected discoveries have reinvigorated studies of integrated ferroelectrics, with teams racing to understand the fundamentals and/or deploy these new materials—or, more correctly, attractive new capabilities of old materials—in commercial devices. The five years since the seminal report of ferroelectric (Al,Sc)N [Fichtner et al., J. Appl. Phys. 125, 114103 (2019)] have been particularly exciting, and several aspects of recent advances have already been covered in recent review articles [Jena et al., Jpn. J. Appl. Phys. 58, SC0801 (2019); Wang et al., Appl. Phys. Lett. 124, 150501 (2024); Kim et al., Nat. Nanotechnol. 18, 422–441 (2023); and F. Yang, Adv. Electron. Mater. 11, 2400279 (2024)]. We focus here on how the ferroelectric wurtzites have made the field rethink domain walls and the polarization reversal process—including the very character of spontaneous polarization itself—beyond the classic understanding that was based primarily around perovskite oxides and extended to other chemistries with various caveats. The tetrahedral and highly covalent bonding of AlN along with the correspondingly large bandgap lead to fundamental differences in doping/alloying, defect compensation, and charge distribution when compared to the classic ferroelectric systems; combined with the unipolar symmetry of the wurtzite structure, the result is a class of ferroelectrics that are both familiar and puzzling, with characteristics that seem to be perfectly enabling and simultaneously nonstarters for modern integrated devices. The goal of this review is to (relatively) quickly bring the reader up to speed on the current—at least as of early 2025—understanding of domains and defects in wurtzite ferroelectrics, covering the most relevant work on the fundamental science of these materials as well as some of the most exciting work in early demonstrations of device structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Materials Data on HfGeO2 by Materials Project

HfO2(Ge) crystallizes in the tetragonal I4_1/a space group. The structure is three-dimensional. Hf is bonded to six equivalent O atoms to form distorted edge-sharing HfO6 octahedra. There are a spread of Hf–O bond distances ranging from 2.14–2.26 Å. Ge is bonded in a distorted square co-planar geometry to four equivalent O atoms. There are two shorter (2.48 Å) and two longer (2.58 Å) Ge–O bond lengths. O is bonded in a 5-coordinate geometry to three equivalent Hf and two equivalent Ge atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Exploiting Fixed Charge at Selective Contacts for Silicon Photovoltaics

The goal of this work was to examine and exploit fixed interface charges in ultra-thin (0-3 nm thickness) tunnel dielectric layers sandwiched between silicon and selective contact metal oxides (molybdenum oxide, MoO x , titanium oxide, TiO 2 ). Specifically, the interface fixed charge was varied by changing processing conditions and materials over a wide range and the effect on the current-voltage behavior and the Schottky barrier height was quantified. In budget period 1 (year 1), the objective was to grow aluminum oxide tunnel layers with quantified fixed charge over a range of ~1E12 to ~-2E12 cm -2 and combine these with MoO x and TiO 2 layers on Czochralsi (CZ) mono p- and n-Si, respectively. We sought conditions that maximize fixed charge and minimize Schottky barrier height to MoO x contacts to p-Si. This objective, along with investigating the effects of silicon surface terminations, occupied the majority of the project timeline (Q1-Q8) due to complications with high specific contact resistivity values. In the last two quarters of the project period, the objective was to insert HfO2 layers between Si and aluminum oxide layers to quench the fixed charge for layers with otherwise identical thermal history. Another objective was to lower the barrier height at TiO 2 -based contacts on n-type Si, but that was never investigated completely.

14 SOLAR ENERGY↗
DOE OSTI2025

Status of the Fuel Fragment Dispersal Studies at Oak Ridge National Laboratory

During a loss-of-coolant accident, a nuclear fuel rods undergo balloon and burst. High burnup fuel is known to fragment and pulverize leading to the potential for the fuel to disperse through the burst opening either during the initial burst or following the burst during the reflood event. This milestone summarizes the design and assembly of a system to study dispersal in a postburst event. Surrogate fuel material (HfO2, tungsten, and yttria-stabilized zirconia [YSZ]) dispersing from as-burst loss-of-coolant accident (LOCA) test specimens was extensively investigated, along with dispersal of actual nuclear fuel following a LOCA Severe Accident Test Station (SATS) test. Surrogate material tests spanned a variety of burst geometries, particle types, particle size distributions, and rod oscillation loadings (frequency and amplitude combinations).

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Synthesis and Ultrahigh Pressure Compression of High-Entropy Boride (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 to 220 GPa

The high-entropy boride (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 material was synthesized under high-pressures and high-temperatures in a large-volume Paris-Edinburgh (PE) press from a ball-milled powder mix of HfO2, MoO3, Nb2O5, Ta2O5, ZrO2, carbon black, and boron carbide. The transformation process was monitored in situ by energy-dispersive x-ray diffraction with conversion starting at 1100 °C and completed by 2000 °C with the formation of a single hexagonal AlB2-type phase. The synthesized sample was recovered, powdered, and mixed with platinum pressure marker and studied under high pressure by angle-dispersive x-ray diffraction in a diamond anvil cell. The hexagonal AlB2-type phase of (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 was found to be stable up to the highest pressure of 220 GPa reached in this study (volume compression V/V0 = 0.70). The third order Birch-Murnaghan equation of state fit to the high-pressure data up to 220 GPa results in an ambient pressure unit cell volume V0=28.16±0.04 Å3, bulk modulusKo = 407 ± 6 GPa, pressure derivative of bulk-modulus K0′ = 2.73 ± 0.045 GPa. Our study indicates that this high-entropy boride (Hf0.2Mo0.2Nb0.2Ta0.2Zr0.2)B2 material is stable to ultrahigh pressures and temperatures and exhibit high bulk modulus similar to other incompressible transition metal borides like ReB2 and Os2B3.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Chapter 3.5 - Effect of Surface/Interface Energy and Stress on the Ferroelectric Properties

The ferroelectricity in fluorite-structure type oxide thin films can be attributed to the stabilization of a noncentrosymmetric orthorhombic phase (space group: Pca21), which is a nonequilibrium phase of bulk HfO2 or ZrO2. Various mechanisms, including surface or interface/grain boundary energy and film stress, have been suggested to stabilize the metastable ferroelectric phase, and kinetic mechanisms have been shown to inhibit the formation of the stable monoclinic phase. Film thickness has been demonstrated to be a critical factor that strongly influences the structure and ferroelectric response of films. Although the film thickness is a key factor for the formation of the ferroelectric phase in fluorite-structure type thin films, details of it have not been clearly elucidated yet. In this chapter, the existing literature on the thickness-dependent ferroelectricity in fluorite-type oxides is comprehensively reviewed, and the previous studies to mitigate the thickness effects are discussed.

Hyuk Park, Min↗
DOE OSTI2023

A Landau-Devonshire Approach of Elastic Strain Effects on Ferroelectric Al1-xScxN

Landau-Devonshire thermodynamic modeling enables the phenomenological description of ferroelectrics. 1 The approach has been validated across a wide range of ferroelectric materials from the first ferroelectric discovered, Rochelle Salt, to recent HfO2-based materials. 2-4 Extension to what is now referred to as the Landau-Ginsburg-Devonshire model enables rigorous investigation of polarization boundaries and reorientation, phase transformations, and domain formation/evolution. We present a thermodynamic analysis of the recently discovered nitride ferroelectric materials 5-7 using the classic Landau-Devonshire approach. The electrostrictive and dielectric stiffness coefficients of Al1-xScxN with wurtzite structure (6mm) are determined using a free energy density function assuming a hexagonal parent phase (6/mmm), with the first order phase transition based on the dielectric stiffness relationships (Fig. 1). The results of this analysis show that the strain sensitivity of the energy barrier is one order of magnitude larger than that of the spontaneous polarization in these wurtzite ferroelectrics, yet both are less sensitive to strain compared to classic perovskite ferroelectrics (Fig. 2). These analysis results reported here explain experimentally reported sensitivity of coercive field to elastic strain/stress in Al1-xScxN films, and would enable further thermodynamic analysis via phase field simulation and related methods.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS↗
DOE OSTI2019

On the Origin of the Large Remanent Polarization in La:HfO 2

We report that the outstanding remanent polarization of 40 µC cm –2 reported for a 10 nm thin La:HfO 2 film in 2013 has attracted much attention. However, up to now, no explanation for this large remanent polarization has been presented. Density functional theory and X-ray diffraction are used to shine light onto three major aspects that impact the macroscopically observed remanent polarization: phase fraction, spontaneous polarization, and crystallographic texture. Density functional theory calculations show that the spontaneous polarization (P s ) of La:HfO 2 is indeed a bit larger than for other HfO 2 -or ZrO 2 -based compounds; however, the P s is not large enough to explain the observed differences in remanent polarization. While neither phase fractions nor spontaneous polarization nor strain are significantly different from those in other HfO 2 films, a prominent 020/002 texture distinguishes La doped from other HfO 2 -based ferroelectric films. Angular-dependent diffraction data provide a pathway to calculate the theoretically expected remanent polarization, which is in agreement with the experimental observations. Finally, an interplay of the in-plane strain and texture is proposed to impact the formation of the ferroelectric phase during annealing. Lastly, further aspects of the special role of La as a dopant are collected and discussed to motivate future research.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Kinetic Understanding of Field-Induced Phase Transition from Tetragonal to Ferroelectric Orthorhombic Phase in Ferroelectric CeO 2 –HfO 2 –ZrO 2 Films

The ferroelectric properties and structural phase transition behaviors of fluorite-type CeO 2 −HfO 2 −ZrO 2 films were investigated. The epitaxial films on indium tin oxide (ITO) (111)/yttria-stabilized zirconia (YSZ) (111) substrates were grown through pulsed laser deposition at room temperature and subsequently heat-treated at 1000 °C under a N 2 gas flow. The crystalline phases and Curie temperatures of the films were investigated by X-ray diffraction. An increase in the Ce or Zr content in the films led to a higher crystallographic symmetry, such as orthorhombic or tetragonal. In addition, electrical characterization revealed that the orthorhombic films and some of the tetragonal films displayed ferroelectricity. This was due to the field-induced phase transition from the tetragonal to ferroelectric orthorhombic phase in the films, where the Curie temperatures were relatively low. The tetragonal metastable phase was kinetically frozen and could not change into the stable orthorhombic phase at such a low temperature. The critical electric field where the field-induced phase transition occurred was below 0.8 MV/cm, which was sufficiently small compared to the coercive field. These results evidence the kinetic driving force that causes a field-induced phase transition from the paraelectric tetragonal phase to the ferroelectric orthorhombic phase in HfO 2 -based ferroelectrics. They also enhance our understanding of the thermodynamic phase stabilities of HfO 2 -based material polymorphs.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Engineering Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films by Epitaxial Stress

The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf 0.5 Zr 0.5 O 2 (HZO) and La 0.67 Sr 0.33 MnO 3 (LSMO) electrodes were grown on a set of single crystalline oxide (001)-oriented (cubic or pseudocubic setting) substrates with a lattice parameter in the 3.71–4.21 Å range. The lattice strain of the LSMO electrode, determined by the lattice mismatch with the substrate, is critical in the stabilization of the orthorhombic phase of HZO. On tensilely strained LSMO electrodes, most of the HZO film is orthorhombic, whereas the monoclinic phase is favored when LSMO is relaxed or compressively strained. Therefore, the HZO films on TbScO 3 and GdScO 3 substrates present substantially enhanced ferroelectric polarization in comparison to films on other substrates, including the commonly used SrTiO 3 . In conclusion, the capability of having epitaxial doped HfO 2 films with controlled phase and polarization is of major interest for a better understanding of the ferroelectric properties and paves the way for fabrication of ferroelectric devices based on nanometric HfO 2 films.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Engineering High- k /SiGe Interface with ALD Oxide for Selective GeO x Reduction

Suppression of electronic defects induced by GeO x at the high- k gate oxide/SiGe interface is critical for implementation of high-mobility SiGe channels in complementary metal-oxide-semiconductor (CMOS) technology. Theoretical and experimental studies have shown that a low defect density interface can be formed with an SiO x -rich interlayer on SiGe. Experimental studies in the literature indicate a better interface formation with Al 2 O 3 in contrast to HfO 2 on SiGe; yet, the mechanism behind this is not well understood. In this study, the mechanism of forming a low defect density interface between Al 2 O 3 /SiGe is discovered using atomic layer deposited (ALD) Al 2 O 3 insertion into or on top of ALD HfO 2 gate oxides. To elucidate the mechanism, correlations are made between the defect density determined by impedance measurements and the chemical and physical structures of the interface determined by high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. The compositional analysis reveals an SiO x rich interlayer for both Al 2 O 3 /SiGe and HfO 2 /SiGe interfaces with the insertion of Al 2 O 3 into or on top of the HfO 2 oxide. The data is consistent with the Al 2 O 3 insertion inducing decomposition of the GeO x from the interface to form an electrically passive, SiO x rich interface on SiGe. This mechanism demonstrates that nanolaminate gate oxide chemistry cannot be interpreted as resulting from a simple layer-by-layer ideal ALD process, because the precursor or its reaction products can diffuse through the oxide during growth and react at the semiconductor interface. This finding shows that in scaled CMOS, remote oxide ALD (oxide ALD on top of the gate oxide) can be used to suppress electronic defects at gate oxide semiconductor interfaces by oxygen scavenging.

36 MATERIALS SCIENCE↗