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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Development of a HgCdTe photomixer and impedance matched GaAs FET amplifier

A research program for the development of a 10.6 micron HgCdTe photodiode/GaAs field effect transistor amplifier package for use at cryogenic temperatures (77k). The photodiode/amplifier module achieved a noise equivalent power per unit bandwidth of 5.7 times 10 to the 20th power W/Hz at 2.0 GHz. The heterodyne sensitivity of the HgCdTe photodiode was improved by designing and building a low noise GaAs field effect transistor amplifier operating at 77K. The Johnson noise of the amplifier was reduced at 77K, and thus resulted in an increased photodiode heterodyne sensitivity.

Shanley, J. F.↗
NASA NTRS1982

Transient and diffusion analysis of HgCdTe

Solute redistribution during directional solidification of HgCdTe is addressed. Both one-dimensional and two-dimensional models for solute redistribution are treated and model results compared to experiment. The central problem studied is the cause of radial inhomogeneities found in directionally solidified HgCdTe. A large scale gravity-driven interface instability, termed shape instability, is postulated to be the cause of radial inhomogeneities. Recommendations for future work, along with appropriate computer programs, are included.

Clayton, J. C.↗
NASA NTRS1987

Development of a P-I-N HgCdTe photomixer for laser heterodyne spectrometry

An improved HgCdTe photomixer technology was demonstrated employing a p-i-n photodiode structure. The i-region was near intrinsic n-type HgCdTe; the n-region was formed by B+ ion implantation; and the p-region was formed either by a shallow Au diffusion or by a Pt Schottky barrier. Experimental devices in a back-side illuminated mesa diode configuration were fabricated, tested, and delivered. The best photomixer was packaged in a 24-hour LN2 dewar along with a cooled GaAs FET preamplifier. Testing was performed by mixing black-body radiation with a CO2 laser beam and measuring the IF signal, noise, and signal-to-noise ratio in the GHz frequency range. Signal bandwidth for this photomixer was 1.3 GHz. The heterodyne NEP was 4.4 x 10 to the -20 W/Hz out to 1 GHz increasing to 8.6 x 10 to the -10 W/Hz at 2 GHz. Other photomixers delivered on this program had heterodyne NEPs at 1 GHz ranging from 8 x 10 to the -20 to 4.4 x 10 to the -19 W/Hz and NEP bandwidths from 2 to 4 GHz.

Bratt, Peter R.↗
NASA NTRS1987

HgCdTe versus HgZnTe - Electronic properties and vacancy formation energies

The alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. The electron mobility was calculated in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg(0.7)Cd(03)Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.

Berding, M. A.↗
NASA NTRS1989

Laboratory and telescope use of the NICMOS2 128 x 128 HgCdTe array

The second generation of Hubble Space Telescope (HST) instruments will include a near-infrared instrument. This choice has driven the development of near-infrared arrays to larger sizes and lower read noises. Rockwell International has delivered an array for use in the Near Infrared Camera and Multi-Object Spectrometer (NICMOS) instrument; this array has been dubbed NICMOS2. NICMOS2 is a 128x128 array of HgCdTe diodes In-bonded to a switched MOSFET readout. The readout was specifically designed for astronomical use with the HST requirement of low read noise a prime goal. These arrays use detector material which is similar to that used by Rockwell in previous arrays (e.g., HgCdTe produced on a sapphire substrate), but the NICMOS2 devices differ substantially from other 128x128 arrays produced by Rockwell in having a read noise of only 30 electrons when read out using appropriate correlated sampling. NICMOS2 has now been characterized in the laboratory, and it has been used on groundbased telescopes.

Rieke, Marcia J.↗
NASA NTRS1990

LWIR HgCdTe: Innovative detectors in an incumbent technology

HgCdTe is the current material of choice for high performance imagers operating at relatively high temperatures. Its lack of technological maturity compared with silicon and wide-band gap III-V compounds is more than offset by its outstanding IR sensitivity and by the relatively benign effect of its materials defects. This latter property has allowed non-equilibrium growth techniques, metal oxide chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), to produce device quality long wavelength infrared (LWIR) HgCdTe even on common substrates like GaAs and GaAs/Si. Detector performance in these exotic materials structures is comparable in many ways with devices in equilibrium-grown material. Lifetimes are similar. RoA values at 77K as high as several hundred have been seen in HgCdTe/GaAs/Si with 9.5 micron cut-off wavelength. HgCdTe/GaAs layers with approx. 15 micron cut-off wavelengths have given average 77K RoAs of greater than 2. Hybrid focal plane arrays have been evaluated with excellent operability.

Tennant, William E.↗
NASA NTRS1990

Surface electrons in inverted layers of p-HgCdTe

Anodic oxide passivation of p-type HgCdTe generates an inversion layer. Extremely high Hall mobility data for electrons in this layer indicated the presence of a two-dimensional electron gas. This is verified by use of the Shubnikov-de Haas effect from 1.45 to 4.15 K. Data are extracted utilizing a numerical second derivative of dc measurement. Three sub-bands are detected. Their relative occupancies are in excellent agreement with theory and with experimental results obtained on anodic oxide as accumulation layers of n-type HgCdTe. The effective mass derived is comparable to what was expected.

Schacham, Samuel E.↗
NASA NTRS1991

Modelling of the dynamics of HgCdTe growth by the vertical Bridgman method

The analysis of Kim and Brown (1989), which described the pseudo-steady state of the HgCdTe melt/crystal system grown by the vertical Bridgman method, is extended to the study of the transients during the crystal growth and, in particular, at the beginning of the growth. The time-dependent numerical simulations developed show the development of a diffusion layer in the melt and the direct relationship between this layer and the intensity and the pattern of convection in the melt. It is shown that the spread of the solute layer occurs on a diffusive time scale, with the initial transient to the steady-state growth rate lasting several hours for the slow growth rates that are typical of the HgCdTe growth. The simulations demonstrate all the features observed experimentally by Szofran et al. (1984).

Kim, Do H.↗
NASA NTRS1997

Numerical Modeling of HgCdTe Solidification: Effects of Phase Diagram, Double-Diffusion Convection and Microgravity Level

Melt convection, along with species diffusion and segregation on the solidification interface are the primary factors responsible for species redistribution during HgCdTe crystal growth from the melt. As no direct information about convection velocity is available, numerical modeling is a logical approach to estimate convection. Furthermore influence of microgravity level, double-diffusion and material properties should be taken into account. In the present study, HgCdTe is considered as a binary alloy with melting temperature available from a phase diagram. The numerical model of convection and solidification of binary alloy is based on the general equations of heat and mass transfer in two-dimensional region. Mathematical modeling of binary alloy solidification is still a challenging numericial problem. A Rigorous mathematical approach to this problem is available only when convection is not considered at all. The proposed numerical model was developed using the finite element code FIDAP. In the present study, the numerical model is used to consider thermal, solutal convection and a double diffusion source of mass transport.

Bune, Andris V.↗
NASA NTRS1998

3-D Modeling of Double-Diffusive Convection During Directional Solidification of a Non-Dilute Alloy with Application to the HgCdTe Growth Under Microgravity Conditions

A numerical calculation for a non-dilute alloy solidification was performed using the FIDAP finite element code. For low growth velocities plane front solidification occurs. The location and the shape of the interface was determined using melting temperatures from the HgCdTe liquidus curve. The low thermal conductivity of the solid HgCdTe causes thermal short circuit through the ampoule walls, resulting in curved isotherms in the vicinity of the interface. Double-diffusive convection in the melt is caused by radial temperature gradients and by material density inversion with temperature. Cooling from below and the rejection at the solid-melt interface of the heavier HgTe-rich solute each tend to reduce convection. Because of these complicating factors dimensional rather then non-dimensional modeling was performed. Estimates of convection contributions for various gravity conditions was performed parametrically. For gravity levels higher then 1 0 -7 of earth's gravity it was found that the maximum convection velocity is extremely sensitive to gravity vector orientation and can be reduced at least by factor of 50% for precise orientation of the ampoule in the microgravity environment. The predicted interface shape is in agreement with one obtained experimentally by quenching. The results of 3-D modeling are compared with previous 2-D finding. A video film featuring melt convection will be presented.

Bune, Andris V.↗
NASA NTRS1996

4482 Element Multispectral Hybrid PV/PC HgCdTe IRFPA for High Resolution Coverage of 3.7 - 15.4 Micrometers for the AIRS Instrument

The Atmospheric Infrared Sounder (AIRS) is a key facility instrument in the NASA Earth Observing System (EOS) program, being implemented to obtain comprehensive long-term measurements of earth processes affecting global change. The instrument performs passive IR remote sensing using a high resolution grating spectrometer with a wide spectral coverage (3.7 - 15.4 m) directing radiation onto a hybrid HgCdTe IRFPA operating at 58K in a vacuum package cooled to 155K. The hybrid HgCdTe FPA consists of twelve modules, 10 with multiplexed photovoltaic detectors and two with individually leaded out photoconductive detectors. The complex FPA has a large optical footprint, 53 mm x 66 mm, and receives energy dispersed from the grating through a precision filter assembly containing 17 narrow band filters. The backside illuminated PV detector arrays are fabricated from P-on-n double layer LPE grown heterojunction detectors in a bilinear format of 50 m x 100 m detectors, with from 232 to 420 detectors per module. For the MWIR bands four PV modules cover the 3.7 m to 8.22 m region. Low detector capacitance and low noise preamplifiers in the ROIC are key to achieving high sensitivities in these bands. Uniform quantum efficiencies and detectivities exceeding 3E13 cm-rtHz/W have been achieved. The LWIR region is covered by six PV modules spanning 8.8 m to 13.75 m. High detector resistance and very low ROIC preamplifier input noise are key to achieving high sensitivity. A detectivity exceeding 2E11 cm-rtHz/W has been achieved at the longest wavelength. Two additional PC modules cover the longest spectral bands out to 15.4 m. This high performance multispectral focal plane has been built and integrated with the dewar assembly, and is currently being integrated with the complete AIRS sensor.

Rutter, James↗
NASA NTRS2003

Proton-Induced Transients and Charge Collection Mechanisms in a LWlR HgCdTe Focal Plane Array

Low noise performance of IR detectors is required, even in the presence of charged particles. Galactic cosmic rays, trapped protons & solar energetic particles. Particle induced transients identified as an important source of noise on ESA's ISO satellite. Also observed on NICMOS Instrument on NASA% Hubble Space Telescope. Tools to analyse particle induced transients have been developed. To date, comparisons of model have been made to flight data for a HgCdTe array exposed to trapped protons, and to a Si array exposed to laboratory protons. We report ground based proton transient measurements in a modem LWlR HgCdTe array operating under cryogenic conditions. Demonstration of charge collection mechanisms. Provide benchmarks for modeling tools.

Marshall, Paul↗
NASA NTRS2006

Comparison of Measured Leakage Current Distributions with Calculated Damage Energy Distributions in HgCdTe

This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distribution were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [I]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Car10 code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. The nuclear elastic component (also calculated using the MCNPX) has a negligible effect on the shape of the damage distribution. The Coulombic contribution was calculated using MRED [3,4], a Geant4 [4,5] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

Marshall, C. J.↗
NASA NTRS2007

Comparison of Measured Dark Current Distributions with Calculated Damage Energy Distributions in HgCdTe

This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distributions were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [1]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Carlo code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. While the nuclear elastic component (also calculated using the MCNPX) contributes only a small fraction of the total nonionizing damage energy, its inclusion in the shape of the damage across the array is significant. The Coulombic contribution was calculated using MRED [3-5], a Geant4 [4,6] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

Marshall, C. J.↗
NASA NTRS2018

Evaluation of Space Radiation Effects on HgCdTe Avalanche Photodiode Arrays for Lidar Applications

We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

Sun, Xiaoli↗
NASA NTRS2018

Single Photon HgCdTe Avalanche Photodiode and Integrated Detector Cooler Assemblies for Space Lidar Applications

A linear mode photon counting HgCdTe avalanche photodiode (APD) focal plane array (FPA) detector was developed for space lidar applications. An integrated detector cooler assembly (IDCA) was manufactured using a miniature Stirling cooler. The HgCdTe APD demonstrated a greater than 60% photon detection efficiency from 0.9 to 4.3 μm wavelength and a dark count rate less than 250,000/s. The IDCA cooled the FPA to 110K from ambient room temperature at a total electrical power of 7 W. The IDCA has passed environmental tests, including vibration, thermal cycling and thermal vacuum tests.

Sun, Xiaoli↗
NASA NTRS2020

Proton Radiation Effects on HgCdTe Avalanche Photodiode Detectors

Space radiation damage and proton induced transient effects were evaluated on 4.4 μm cutoff HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS. Device performances as a function of total dose up to 100 krad (Si) were measured with ~60 MeV protons on 3 types of APD samples: 4x4 pixel APD fanout arrays with and without connection to a read-out integrated circuit (ROIC), and a 2x8 pixel photon counting APD focal plane array (FPA). A gamma-ray test was also conducted to study ionization effects. Both APD arrays exhibited a small decrease in the quantum efficiency and a linear increase in the dark current with the proton fluence. The 2x8 pixel photon counting FPA also exhibited an increase in the dark count rate with proton dose. After the proton irradiation and an overnight room temperature warm-up, the APD dark currents at 80 K increased significantly in both types of APD arrays. All radiation damage to these HgCdTe APD arrays annealed out after baking them at >85 °C for several hours. Transient protons through the devices were found to cause large pulses at the detector output but recover within 1 μs.

Xiaoli Sun↗
NASA NTRS2017

Characterization of the Teledyne CHROMA HgCdTe Detector for Imaging Spectrometers

Imaging spectroscopy places high demands upon detector performance. The dynamic range, linearity, and sensitivity must be maintained at high frame rates, and artifacts must be minimized across large focal plane array (FPA) formats. In this contribution, we discuss the Teledyne CHROMA HgCdTe FPA in the context of imaging spectrometer applications. The FPA was characterized in a laboratory thermal-vacuum chamber that allowed the read noise, dark current, well capacity, linearity, and crosstalk to be measured. Results are presented across a range of operating temperatures and pixel clock rates. Additionally, the outcomes of radiation testing to 100 krad TID are discussed. The results of these characterizations are critical to the designs and performance predictions of future imaging spectrometers utilizing the HgCdTe CHROMA FPA.

Green, Robert↗