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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Non‐Linear Kinetics of The Lithium Metal Anode on Li 6 PS 5 Cl at High Current Density: Dendrite Growth and the Role of Lithium Microstructure on Creep

Abstract Interfacial instability, viz., pore formation in the lithium metal anode (LMA) during discharge leading to high impedance, current focusing induced solid–electrolyte (SE) fracture during charging, and formation/behaviour of the solid–electrolyte interphase (SEI), at the anode, is one of the major hurdles in the development of solid‐state batteries (SSBs). Also, understanding cell polarization behaviour at high current density is critical to achieving the goal of fast‐charging battery and electric vehicle. Herein, via in situ electrochemical scanning electron microscopy (SEM) measurements, performed with freshly deposited lithium microelectrodes on transgranularly fractured fresh Li6PS5Cl (LPSCl), the LiǀLPSCl interface kinetics are investigated beyond the linear regime. Even at relatively small overvoltages of a few mV, the LiǀLPSCl interface shows non‐linear kinetics. The interface kinetics possibly involve multiple rate‐limiting processes, i.e., ion transport across the SEI and SE|SEI interfaces, as well as charge transfer across the LiǀSEI interface. The total polarization resistance R P of the microelectrode interface is determined to be ≈ 0.8 Ω cm 2 . It is further shown that the nanocrystalline lithium microstructure can lead to a stable LiǀSE interface via Coble creep along with uniform stripping. Also, spatially resolved lithium deposition, i.e., at grain surface flaws, grain boundaries, and flaw‐free surfaces, indicates exceptionally high mechanical endurance of flaw‐free surfaces toward cathodic load (>150 mA cm −2 ). This highlights the prominent role of surface defects in dendrite growth.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

The role of surface hydroxyls on the radiolysis of gibbsite and boehmite nanoplatelets

Understanding mechanistic pathways to radiolytic hydrogen generation by metal oxyhydroxide nanomaterials is challenging because of the difficulties of distinguishing key locations of OH bond scission, from structural interiors to hydroxylated surfaces to physi-sorbed water molecules. In this work we exploited the interface-selectivity of vibrational sum frequency generation (VSFG) to isolate surface versus bulk hydroxyl groups for gibbsite and boehmite nanoplatelets before and after 60 Co irradiation at dose levels of approximately 7.0 and 29.6 Mrad. While high-resolution microscopy revealed no effect on particle bulk and surface structures, VSFG results clearly indicated up to 83% and 94% radiation-induced surface OH bond scission for gibbsite and boehmite, respectively, a substantially higher proportion than observed for interior OH groups by IR and Raman spectroscopy. Electron paramagnetic spectroscopy revealed that the major radiolysis products bound in the mineral structures are trapped electrons, O , O 2 – and possibly F-centers in gibbsite, and H , O and O 3 – in boehmite, which persist on the time frame of several months. The entrapped radiolysis products appear to be highly stable, enduring re-hydration of particle surfaces, and likely reflect a permanent adjustment in the thermodynamic stabilities of these nanomaterials.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2020

Aberrant electronic and structural alterations in pressure tuned perovskite NaOsO 3

The perovskite NaOsO 3 has a metal–insulator transition at temperature 410 K, which is delicate, intriguing, and provokes a lot of debate on its nature. Our combined electrical resistance, Raman, and synchrotron x-ray diffraction experiments show that the insulating ground state in this osmate endures under high pressure up to at least 35 GPa. In this pressure range, compression reveals hidden hysteretic resistance properties with a transient metallic state near 200 K, manifested three electronic character anomalies (at 1.7, 9.0, and 25.5 GPa), and a structural transition to the singular polar phase (at ~18 GPa). We distinguish NaOsO 3 from the regular crystallographic behavior of perovskites, though the electrical specificities resemble iridates and nickelates. The theoretical first-principle band structure and lattice dynamics calculations demonstrate that the magnetically itinerant Lifshitz-type mechanism with spin–orbit and spin–phonon interactions is responsible for these pressure-induced changes. Our findings provide another new playground for the emergence of new states in 5d materials by using high-pressure methods.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Probing ferroelectric domain structures and their switching dynamics in SrBi2Ta2O9 by in-situ electric biasing in transmission electron microscopy

Abstract Lead-free SrBi 2 Ta 2 O 9 (SBT) has been a promising ferroelectric material for various applications such as electronics and data storage due to its outstanding ferroelectric properties including high fatigue endurance and low leakage current. However, the atomic-scale domain structure and switching dynamics of ferroelectric SBT remain elusive. This study reveals that spontaneous polarization arises from canted bismuth-cation displacements, forming 90° and Ising-type 180° domain walls. Interestingly, topological pairs of ferroelectric vortex and antivortex connect ferroelectric boundaries where three domain walls converge. In situ electrical biasing transmission electron microscopy (TEM) reveals the dominance of 180° switching over 90°, where oxygen octahedral connectivity is protected by ferroelastic energy in the 90° domain wall. Consequently, all 180° domain walls and (anti)vortices are removed, leaving only 90° domain walls in the electrically poled states. Chemical deterioration along domain walls highlights vulnerability of SBT to ferroelectric fatigue. This study provides insight into crucial aspects for practical applications of SBT.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Selective Removal of Perfluorobutyric Acid Using an Electroactive Ion Exchanger Based on Polypyrrole@Iron Oxide on Carbon Cloth

Perfluorabutyric acid (PFBA) is one classify of perfluoroalkyl and polyfluoroalkyl substances (PFASs), which is applied to wide-spread industry compounds. The removal of PFBA has attracted considerable scientific interest in recent decades because it caused environmental pollutions and human diseases. For removing PFASs from wastewater, the adsorption method has been commonly used for the remediation of PFASs. However, it is usually limited by the inevitable “secondary waster” produced in this treatment process. In this work, PFBA can be removed effectively by synergizing the electrically switched ion exchange (ESIX) and a novel nanostructured ion exchanger. Herein, the nanostructured ion exchanger is designed by coating polypyrrole (PPy) @ Fe 2 O 3 nanoneedle on carbon cloth (PPy@Fe 2 O 3 NN-CC). Overall, results show that PPy@Fe 2 O 3 NN-CC film enhances ion exchange speed and efficiency, which endures its high-capacity adsorption ability and rapid regeneration property, thereby reducing secondary waste. Moreover, ESIX based on PPy@Fe 2 O 3 NN-CC has high selectivity for adsorption of PFBA over Cl - , SO 4 2- and NO 3 - .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Probing the Effects of the First Atomic Layer on the Dynamic Behavior of Sub-2 nm MgO/Al 2 O 3 Memristors

As electronic devices continue to scale down from the current sub-5 nm range, atomic-scale control of defects becomes increasingly crucial to suppressing their impact on the physical properties of the devices. Memristors present an excellent example as a nonlinear and dynamic device with high speed and endurance required for electronic applications ranging from neuromorphic computing to nonvolatile memories. Herein we investigate the impact of atomic defects in sub-2 nm thick MgO/Al 2 O 3 atomic layer stack (ALS) memristors that use an M1 (switching layer)/M2 (oxygen vacancy reservoir layer) bilayer structure grown using in vacuo atomic layer deposition (iALD). Intriguingly, we revealed a direct correlation of the atomic defects in the M2 layer with the memristor dynamic behavior using a combined analysis of in situ scanning tunneling spectroscopy (iSTS) on the M2 layer and ex situ characterization on the memristors. Specifically, incomplete coverage of the 1st ALD atomic layer of M2 on the electrode yields defects at the M2/electrode interface. Despite the monotonic increase of ALD coverage, by almost three-fold from ~30% to >90%, at completion of the M2 layer of ~ 0.7 nm in thickness, the impact of the defects on the M2/electrode interface has been found detrimental to both memristor switching speed and endurance. Guided by atomistic simulation, we addressed the issue of interface defects via tuning of the Al surface hydroxylation to increase the first atomic layer ALD coverage to ~75%, leading to improved memristor switching speed and endurance by several orders of magnitude. In conclusion, these findings shed light on the correlation between the atomic defects and the dynamic behavior of sub-2 nm memristors and the importance of minimizing the atomic defects in memristors for future electronic applications.

Atomic Layer Deposition↗
DOE OSTI2023

Computer simulation of carbonization and graphitization of coal

Abstract This study describes computer simulations of carbonization and graphite formation, including the effects of hydrogen, nitrogen, oxygen, and sulfur. We introduce a novel technique to simulate carbonization, ‘Simulation of Thermal Emission of Atoms and Molecules (STEAM)’, designed to elucidate volatile outgassing and density variations in the intermediate material during carbonization. The investigation analyzes the functional groups that endure through high-temperature carbonization and examines the graphitization processes in carbon-rich materials containing non-carbon impurity elements. The physical, vibrational, and electronic attributes of impure amorphous graphite are analyzed, and the impact of nitrogen on electronic conduction is investigated.

Ugwumadu, C. (ORCID:0000000199207594)↗
DOE OSTI2023

Use of Nucleating Agent NA11 in the Preparation of Polyvinylidene Fluoride Dual-Layer Hollow Fiber Membranes

Polyvinylidene fluoride (PVDF) dual-layer hollow fiber membranes were simultaneously fabricated by thermally induced phase separation (TIPS) and non-solvent induced phase separation (NIPS) methods using a triple orifice spinneret (TOS) for water treatment application. The support layer was prepared from a TIPS dope solution, which was composed of PVDF, gamma-butyrolactone (GBL), and N-methyl-2-pyrrolidone (NMP). The coating layer was prepared from a NIPS dope solution, which was composed of PVDF, N,N-dimethylacetamide (DMAc), and polyvinylpyrrolidone (PVP). In order to improve the mechanical strength of the dual-layer hollow fiber, a nucleating agent, sodium 2,2'-methylene bis-(4,6-di-tert-butylphenyl) phosphate (NA11), was added to the TIPS dope solution. The performance of the membrane was evaluated by surface and cross-sectional morphology, water flux, mechanical strength, and thermal property. Our results demonstrate that NA11 improved the mechanical strength of the PVDF dual-layer hollow fiber membranes by up to 42%. In addition, the thickness of the coating layer affected the porosity of the membrane and mechanical performance to have high durability in enduring harsh processing conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Durability Study of a High-Pressure Common Rail Fuel Injection System Using Lubricity Additive-Dosed Gasoline-Like Fuel—Improved Endurance with Upgraded Hardware

Gasoline compression ignition (GCI) is a promising combustion technology that can help the commercial transportation sector achieve operational flexibility and meet upcoming criteria pollutant regulations. However, high-pressure fuel injection systems (>1000 bar) are needed to enable GCI and fully realize its benefits compared to conventional diesel combustion. This work is a continuation of previous durability studies that identified three key technical risks after running gasoline-like fuel through a heavy-duty, common rail injection system: (i) cavitation damage to the inlet check valve of the high-pressure pump, (ii) loss of injector fueling capacity, (iii) cavitation erosion of the injector nozzle holes. Upgraded hardware solutions were tested on a consistent 400- to 800-hour NATO durability cycle with the same gasoline-like fuel as previous studies. The upgraded pump showed no signs of abnormal wear or cavitation damage to the inlet check valve. In contrast to previous studies, there were no signs of pump performance degradation observed after 400 hours of testing. Material selection and design upgrades were also made to the injector which, only showed a 6.5% loss in fueling capacity after 800 hours of durability testing compared to 49.3% previously. Finally, geometric nozzle hole features such as higher inlet radius of curvature and higher K-factor were found to correlate with reduced cavitation erosion. However, mitigation of eccentric radial needle motion (i.e., wobble) is likely needed to further suppress cavitation. In general, the results from this study indicate there are viable hardware-based solutions for improving the endurance of high-pressure systems when running with gasoline-like fuel.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

High performance, electroforming-free, thin film memristors using ionic Na 0.5 Bi 0.5 TiO 3

Here, in ionically conducting Na 0.5 Bi 0.5 TiO 3 (NBT), we explore the link between growth parameters, stoichiometry and resistive switching behavior and show NBT to be a highly tunable system. We show that the combination of oxygen ionic vacancies and low-level electronic conduction is important for controlling Schottky barrier interfacial switching. We achieve a large ON/OFF ratio for high resistance/low resistance ( R HRS / R LRS ), enabled by an almost constant R HRS of ~10 9 Ω, and composition-tunable R LRS value modulated by growth temperature. R HRS / R LRS ratios of up to 10 4 and pronounced resistive switching at low voltages (SET voltage of <1.2 V without high-voltage electroforming), strong endurance (no change in resistance states after several 10 3 cycles), uniformity, stable switching and fast switching speed are achieved. Of particular interest is that the best performance is achieved at the lowest growth temperature studied (600 °C), which is opposite to the case of most other perovskite oxides for memristors, where higher growth temperatures are required for optimum performance. This is understood based on the oxygen vacancy control of interfacial switching in NBT, whereas a range of other mechanisms (including filamentary switching) occur in other perovskites. The study of NBT has enabled us to determine key parameters for achieving high performance memristors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Revealing Antiferroelectric Switching and Ferroelectric Wakeup in Hafnia by Advanced Piezoresponse Force Microscopy

Hafnium oxide (HfO 2 )-based ferroelectrics offer remarkable promise for memory and logic devices in view of their compatibility with traditional silicon complementary metal oxide semiconductor (CMOS) technology, high switchable polarization, good endurance, and thickness scalability. These factors have led to a steep rise in the level of research on HfO 2 over the past number of years. While measurements on capacitors are promising for understanding macroscopic effects, many open questions regarding the emergence of ferroelectricity and electric field cycling behaviors remain. Continued progress requires information regarding the nanoscale ferroelectric behaviors on the bare surface (i.e., without encapsulation), which is notably absent. To overcome this barrier, we have applied complementary modes of piezoresponse force microscopy with the goal of directly and quantitatively sensing nanoscale ferroelectric behaviors in bare HfO 2 thin films. Our results on 8 nm Si-doped HfO 2 reveal nanoscale domains of local remnant polarization states exhibiting a weak piezoelectric coupling (deff) in the range 0.6–1.5 pm/V. While we observed localized enhancement of deff during progressive stressing of the bare HfO 2 thin film, we did not detect stable polarization switching which is a prerequisite of ferroelectric switching. We find that this result could be explained using polarization switching spectroscopy which revealed antiferroelectric-like switching in the form of pinched hysteresis loops as well as increasing remnant response with repeated cycling. As such, our results offer a promising route for material scientists who want to explore the nanoscale origins of antiferroelectricity and ferroelectric wakeup in HfO 2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Impacts of PV Module Connector Failures on Cost and Performance of Utility Scale Photovoltaic Systems

The reliability, cost and performance of electrical connectors are a concern in all types of electrical systems, and demands on connectors used on photovoltaic (PV) systems include that connectors maintain electrical conductivity and physical strength, endure ultraviolet sunlight and high ambient temperature, and resist moisture and chemical intrusion over a very long (>25 year) performance period. Connector failures increase operation and maintenance (O&M) costs and reduce plant production, but connector failure can also cause safety and liability problems, which are of greater concern. This work results from a three-year collaboration between Sandia National Laboratories (SNL), the Electric Power Research Institute (EPRI), and the National Renewable Energy Laboratory (NREL) and funded by the U.S. Department of Energy (DOE) Solar Energy Technology Office (SETO) under Agreements #39035 and #38531 "Connector Reliability Across the US Solar Sector." a multi-pronged investigation of PV connector health across the US (see https://energy.sandia.gov/pvconnectors/). This report presents derivation of a Techno-Economic Analysis (TEA) that models failure modes and frequencies (how often failure occurs), estimates O&M costs and lost production associated with connector failures, and then calculates the effect that PV module connectors can have on Levelized Cost of Energy (LCOE). The model is informed with initial data from quantitative assessment of failure rates, root causes and mechanisms, in-situ diagnostics and data collection, lab-based forensics, and interviews with PV connector manufacturers and plant operators. SNL conducted site inspections at multiple utility-scale sites in different climates and subjected field samples of new, used, and degraded connectors to visual and electrical characterization. EPRI conducted metallurgical analysis of the pin and sleeve conductors to study failure-induced morphological and compositional changes. There is in general a shortage of statistically valid data, but data from PVROM database maintained by SNL was sufficient to ascertain failure rates and lost production as well as provide qualitative insight in its curated maintenance records. This report details the structure of the mathematical model but the sources of data to inform the model will continue to evolve. Analysis of a 100 MW PV plant is provided as an example of the use of the model, with results indicating that connectors are responsible for Annualized O&M Costs of $\$$71,933/year; Annualized Unit O&M Costs of $\$$0.72/kW/year; that a Reserve Account of $\$$187,220 should be available to fund repairs related to connectors; that connectors add $\$$1,494,004 to the Net Present Value of the O&M Costs (project life); and that O&M related to connectors adds about $\$$0.00088/kWh to the Levelized Cost of Energy. The impact of this model is to provide a tool to make the US solar sector more robust by quantifying and monetizing the reliability risks to utility-scale PV systems posed by poorly installed, mismatched and/or poorly designed and manufactured connectors. The TEA provides a model incorporating failure statistics, O&M cost data, and lost production into a single figure of merit, informing decisions and enabling practitioners to optimize cost and performance trade-offs. Stakeholders include connector manufacturers, system designers and equipment specifiers, standards bodies, installers and O&M providers, investors and insurance underwriters. This report supports continued growth of PV predicated on assurances that properly installed and maintained PV system connectors are safe and reliable. The project team is proposing future work including accelerated testing of connectors and expanding the approach taken here to other PV system components, such as TEA for rapid shut-down devices.

14 SOLAR ENERGY↗
DOE OSTI2022

A Review on Gel Polymer Electrolytes for Dye-Sensitized Solar Cells

Significant growth has been observed in the research domain of dye-sensitized solar cells (DSSCs) due to the simplicity in its manufacturing, low cost, and high-energy conversion efficiency. The electrolytes in DSSCs play an important role in determining the photovoltaic performance of the DSSCs, e.g., volatile liquid electrolytes suffer from poor thermal stability. Although low volatility liquid electrolytes and solid polymer electrolytes circumvent the stability issues, gel polymer electrolytes with high ionic conductivity and enduring stability are stimulating substitutes for liquid electrolytes in DSSC. Here, in this review paper, the advantages of gel polymer electrolytes (GPEs) are discussed along with other types of electrolytes, e.g., solid polymer electrolytes and p-type semiconductor-based electrolytes. The benefits of incorporating ionic liquids into GPEs are highlighted in conjunction with the factors that affect the ionic conductivity of GPEs. The strategies on the improvement of the properties of DSSCs based on GPE are also presented.

36 MATERIALS SCIENCE↗
DOE OSTI2023

An Interface–Type Memristive Device for Artificial Synapse and Neuromorphic Computing

Interface-type (IT) metal/oxide Schottky memristive devices have attracted considerable attention over filament-type (FT) devices for neuromorphic computing because of their uniform, filament-free, and analog resistive switching (RS) characteristics. The most recent IT devices are based on oxygen ions and vacancies movement to alter interfacial Schottky barrier parameters and thereby control RS properties. However, the reliability and stability of these devices have been significantly affected by the undesired diffusion of ionic species. Herein, a reliable interface-dominated memristive device is demonstrated using a simple Au/Nb-doped SrTiO 3 (Nb:STO) Schottky structure. The Au/Nb:STO Schottky barrier modulation by charge trapping and detrapping is responsible for the analog resistive switching characteristics. Because of its interface-controlled RS, the proposed device shows low device-to-device, cell-to-cell, and cycle-to-cycle variability while maintaining high repeatability and stability during endurance and retention tests. Furthermore, the Au/Nb:STO IT memristive device exhibits versatile synaptic functions with an excellent uniformity, programmability, and reliability. A simulated artificial neural network with Au/Nb:STO synapses achieves a high recognition accuracy of 94.72% for large digit recognition from MNIST database. These results suggest that IT resistive switching can be potentially used for artificial synapses to build next-generation neuromorphic computing.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ferroelectric Al1 − xBxN–GaN heterostructures

This report demonstrates Al0.93B0.7N thin films grown epitaxially on n-type GaN (0002)/c-plane sapphire substrates by reactive magnetron sputtering at 300 °C. At 200 nm film thickness, the Al0.93B0.07N layers exhibit partially relaxed substrate-induced epitaxial strain, a 0.16° wide (0002) rocking curve, in-plane crystallographic registry, and sub-nanometer surface roughness. Electrically, the stack shows robust hysteresis over three frequency decades, a remanent polarization of ∼125 μC/cm2, a strongly frequency dependent coercive field, highly uniform dc leakage currents, and endurance >106 field cycles. This report validates possibilities for ferroelectric nitride integration into conventional III-nitride heterostructures with high crystalline fidelity, high electrical resistivity, and persistent hysteresis. Such materials are synthesizable at thermal budgets and temperatures compatible with back-end-of-the-line boundary conditions.

Physics↗
DOE OSTI2024

Characterizing the microstructures of mammalian enamel by synchrotron phase contrast microCT

The enamel of mammalian teeth is a highly mineralized tissue that must endure a lifetime of cyclic contact and is inspiring the development of next-generation engineering materials. Attempts to implement enamel-inspired structures in synthetic materials have had limited success, largely due to the absence of a detailed understanding of its microstructure. Here, the present work used synchrotron phase-contrast microCT imaging to evaluate the three-dimensional microstructure of enamel from four mammals including Lion, Gray Wolf, Snow Leopard, and Black Bear. Quantitative results of image analysis revealed that the decussation pattern of enamel consists of discrete diazone (D) and parazone (P) bands of rods organized with stacking arrangement of D+/P/D-/P in all mammals evaluated; the D+ and D- refer to distinct diazone bands with juxtaposed rod orientations from the reference plane. Furthermore, the rod orientations in the bands can be described in terms of two principal angles, defined here as the pitch and yaw. While the pitch angle increases from the outer enamel to a maximum (up to ≈ 40°) near the dentin enamel junction, minimal spatial variations are observed in yaw across the enamel thickness. There are clear differences in the decussation parameters of enamel across species that are interpreted here with respect to the structural demands placed on their teeth. The rod pitch and band width of enamel are identified as important design parameters and appear to be correlated with the bite force quotient of the four mammals evaluated.

36 MATERIALS SCIENCE↗