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Results for “High operating temperature”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Engineering ligand reactivity enables high-temperature operation of stable perovskite solar cells

Perovskite solar cells (PSCs) consisting of interfacial two- and three-dimensional heterostructures that incorporate ammonium ligand intercalation have enabled rapid progress toward the goal of uniting performance with stability. However, as the field continues to seek ever-higher durability, additional tools that avoid progressive ligand intercalation are needed to minimize degradation at high temperatures. We used ammonium ligands that are nonreactive with the bulk of perovskites and investigated a library that varies ligand molecular structure systematically. Here, we found that fluorinated aniliniums offer interfacial passivation and simultaneously minimize reactivity with perovskites. Using this approach, we report a certified quasi–steady-state power-conversion efficiency of 24.09% for inverted-structure PSCs. In an encapsulated device operating at 85°C and 50% relative humidity, we document a 1560-hour T85 at maximum power point under 1-sun illumination.

14 SOLAR ENERGY↗
NASA NTRS2008

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

Patterson, Richard↗
DOE OSTI2021

Al 0.7 Ga 0.3 N MESFET With All-Refractory Metal Process for High Temperature Operation

In this work, ultrawide bandgap Al 0.7 Ga 0.3 N MESFETs with refractory Tungsten Schottky and Ohmic contacts are studied in 300–675 K environments. Variable-temperature dc electrical transport reveals large ON-state drain current densities for an AlGaN device: 209 mA/mm at 300 K and 156 mA/mm at 675 K in the ON-state (25% reduction). Drain and gate currents are only weakly temperature-dependent, suggesting potential for engineering temperature invariant operation. The ON-/ OFF-ratio is limited by OFF-state leakage through the gate, which is attributed to damage from sputter deposition. Future work using refractory metals with larger work functions that are deposited by electron beam deposition is proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ferroelectric epitaxial Al(Sc/B)N/Mo/SiC heterostructures for high operating temperature devices

Advances in wurtzite nitride ferroelectrics of Al 1-x M x N (⁠ M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating > 200°C, a movement toward SiC-based platforms enables better performance over conventional Si, primarily due to the higher bandgap and lower intrinsic carrier concentration of SiC. Hence, the challenge is to develop a deposition process to integrate Al 1-x M x M x N ferroelectrics with elevated temperature-compatible materials for high temperature electronics such as the non-volatile memory component. We demonstrate epitaxial Al M N/Mo/SiC heterostructures, which provides both the crystalline and surface features that promote high-quality ferroelectric nitride film growth. Omega scans of the Mo (110) reflection exhibit a full width at half max of < 0.02° (40 arc sec) and the (0002) peak of the subsequently grown nitride film had a value of 1.1° for 160 nm thick Al 0.7 Sc 0.3 N and 1.3° for 400 nm thick Al 0.94 B 0.06 N. The crystallographic relationships found between the Al M N, Mo, and SiC layers indicate an advancement in sputter deposition of epitaxial films. Ferroelectric switching is also shown at 400 °C in both samples via polarization-electric field hysteresis and pulsed measurements, which exhibited P r values >100 μC cm -2 and E c between 3 and 4 M V cm -1 ⁠, despite a large presence of oxygen in both Al M N films ranging between 4 and 5 at.%, revealed by compositional analysis. This study demonstrates the process for synthesizing high-crystal quality ferroelectric nitride films, which can be used in extremely high temperature applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

The Molybdenum Oxide Interface Limits the High-Temperature Operational Stability of Unencapsulated Perovskite Solar Cells

Here, we report on the improved operational stability of unencapsulated perovskite solar cells (PSCs) aged in an ambient atmosphere at elevated temperatures (70 °C) for >1000 h under constant illumination and bias at 30–50% relative humidity. We identify a previously unseen interfacial degradation mechanism concerning the use of a MoO x interlayer, which was originally added to increase operational stability. Specifically, the hole-transport layer/MoO x interface buckles under illumination at 70 °C, which leads to delamination and rapid losses of short-circuit current density corresponding to an average $t_{80}$ of ~55 h. By judiciously evaluating various hole-transport layers, interlayers, and contacts, we find that replacing the MoO x with a VO x interlayer, regardless of the other components in the solar cell, alleviates this buckling issue due to its higher activation barrier toward crystallization, leading to significant gains in PSC operational stability. Unencapsulated devices aged in an ambient atmosphere with a VO x interlayer retain 71% of their initial PCE on average after constant illumination and bias at 70 °C for 1100 h ($t_{80}$ ~ 645 h). Currently, this is the highest temperature reported for the operational stability of unencapsulated n-i-p PSCs aged in air. Identification of a new facet of the complex degradation mechanisms in PSCs will allow for targeted acceleration testing to speed the deployment of low-cost, long-lasting electricity generation under realistic operating temperatures.

14 SOLAR ENERGY↗
DOE OSTI2019

Durable aluminate toughened zirconate composite thermal barrier coating (TBC) materials for high temperature operation

Research on advanced thermal barrier coating (TBC) materials capable of operating beyond 1200°C has primarily focused on the rare earth zirconate pyrochlores, particularly gadolinium zirconate (Gd 2 Zr 2 O 7 – GZO). The drawback of this material is a significant reduction in durability due to a low fracture toughness. This study investigates utilization of a thermodynamically compatible gadolinia alumina perovskite (GdAlO 3 – GAP) toughening phase to improve the durability of GZO. Dense pellets were fabricated to assess the material properties with minimal microstructural influence. Thermal stability, elastic modulus, hardness, indentation fracture resistance and erosion durability were evaluated for GZO, GAP, and composite pellets containing 10, 30, and 50 wt.% GAP. It was demonstrated that GAP and GZO are thermodynamically compatible through 1600°C and thus capable of operating well beyond the limits of traditional 7 wt.% yttria stabilized zirconia (YSZ). Grain sizes are maintained due to a lack of diffusion, and thus microstructural stability is enhanced. The GAP fracture toughness was shown to be over 2X that of GZO while exhibiting a lower elastic modulus and similar hardness. The 50:50 GZO-GAP composite exhibited a 63% reduction in the absolute erosion rate, demonstrating the immense toughening capabilities of this system. The implications for composite TBCs utilizing this system are discussed, along with future research.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High current, high-temperature operation test of the superconducting magnets in the RHIC yellow ring

We report on the tests conducted at the end of RHIC Run 21 to evaluate the operation of superconducting magnets in the RHIC yellow ring at higher currents – up to 5500 A for the arc dipoles and all other magnets on the dipole bus and the focusing arc quadrupoles, up to 5750 A for defocusing arc quadrupoles and up to 6000 A for the insertion quadrupoles Q1 through Q9 – and higher temperatures – up to 5.1 K – than routine. None of the magnets quenched. This is an encouraging finding as the superconducting magnet coils could reach up to 4.9 K during operation with the 275 GeV EIC hadron beams.

43 PARTICLE ACCELERATORS↗
NASA NTRS1974

Evaluation of cermet materials suitable for lithium lubricated thrust bearings for high temperature operation

Cerment materials (HfC - 10 wt% W; HfC - 10 wt% TaC - 10 wt%W; HfC - 2 wt% CbC - 8 wt% Mo;Hfn - 10 wt% W; Hfn - 10 wt% TaN - 10 wt% W; and ZrC - 17 wt% W) were evaluated for possible use as lithium-lubricated bearings in the control system of a nuclear reactor. Tests of compatibility with lithium were made in T-111 (Ta-8W-2Hf) capsules at temperatures up to 1090 C. The tendencies of HfC-TaC-W, HfC-CbC-Mo, and HfN-W to bond to themselves and to the refractory alloys T-111 and TZM when enclosed in lithium-filled capsules under a pressure of 2000 psi at 980 and 1200 C for 1933 hours were evaluated. Thermal expansion characteristics were determined for the same three materials from room temperature to 1200 C. On the basis of these tests, HfC-10 TaC-10W and HfN-10W were selected as the best and second best candidates, respectively, of the materials tested for the bearing application.

Sinclair, J. H.↗
NASA NTRS1981

Passive components for high temperature operation

The development of resistors, capacitors, and interconnect metalizations utilizing a low pressure chemical vapor deposition (LPCVD) process is described. The LPCVD process allows the passive components to be fabricated at temperatures higher than their highest operating temperatures. The deposition of thin films by LPCVD is accomplished by reacting one or more gases on the surface of a heated substrate. The substrates to be coated are placed on a graphite susceptor and then loaded into the center of a quartz reaction tube. The RF power is applied to the coil on the outside of the reaction tube which in turn is coupled into the graphite susceptor causing it to heat. Pressures of several torr or less are typical, with carrier flow rates of 0.1 to 2.0 liters/min. Nitrogen, hydrogen, and helium are typical carrier gases. These are controlled with mass flow controllers and the pressure is continuously monitored with a capacitive manometer. Materials selection and device testing are also discussed.

Raymond, L. S.↗
NASA NTRS1981

Evaluation of crystal oscillators and frequency dividers for high temperature operation

Active and passive components of crystal oscillators and frequency dividers were tested to determine their performance at temperatures from 300 C to 350 C. The properties of GaAs JFETs were determined and their performance compared with that of silicon devices. Techniques for constructing breadboard circuits were assessed for operation in this temperature range. A Pierce oscillator and a multivibrator (Colorado crystal) oscillator were constructed and tested. Device failures are discussed.

Source record↗
NASA NTRS2015

High Operating Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.

Ting, David Z.↗