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NASA NTRS1986

High capacity demonstration of honeycomb panel heat pipes

High capacity honeycomb panel heat pipes were investigated as heat rejection radiators on future space platforms. Starting with a remnant section of honeycomb panel measuring 3.05-m long by 0.127-m wide that was originally designed and built for high-efficiency radiator fins, features were added to increase thermal transport capacity and thus permit test evaluation as an integral heat transport and rejection radiator. A series of subscale panels were fabricated and reworked to isolate individual enhancement features. Key to the enhancement was the addition of a liquid sideflow that utilizes pressure priming. A prediction model was developed and correlated with measured data, and then used to project performance to large, space-station size radiators. Results show that a honeycomb panel with 5.08-cm sideflow spacing and core modification will meet the design load of a 50 kW space heat rejection system.

Tanzer, H. J.↗

NASA NTRS1981

High-efficiency thin-film GaAs solar cells, phase2

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Yeh, Y. C. M.↗

NASA NTRS1986

High-efficiency GaAs solar concentrator cells for space and terrestrial applications

High-efficiency Al(x)Ga(1-x)As/GaAs heteroface solar concentrator cells have been developed for both space and terrestrial applications. The cells, which were grown using metalorganic chemical vapor deposition, have been fabricated in both the p-n and n-p configurations. Magnesium and zinc are used as p-type dopants, and Se is used as the n-type dopant. The space cells, which are designed for use in a Cassegrainian concentrator operating at 100 suns, AMO, have a circular illuminated area 4 mm in diameter on a 5 mm x 5 mm cell. These cells have exhibited flash-tested efficiencies as high as 23.6 percent at 28 C and 21.6 percent at 80 C. The terrestrial cells have a circular illuminated area 0.2 inches in diameter and are intended for use in a module which operates at 940 suns, AM1.5. These cells have shown a peak efficiency of 26 percent at 753 suns and over 25 percent at greater than 1000 suns.

Hamaker, H. C.↗

NASA NTRS1986

An imaging extreme ultraviolet spectrometer for astrophysical investigations in space

A high-efficiency, extreme ultraviolet (EUV) imaging spectrometer has been constructed and tested. The spectrometer employs a concave toroidal grating illuminated at normal incidence in a Rowland circle mounting and has only one reflecting surface. The toroidal grating has been fabricated by a new technique employing an elastically deformable submaster grating which is replicated in a spherical form and then mechanically distorted to produce the desired aspect ratio of the toroidal surface for stigmatic imaging over the selected wavelength range. The fixed toroidal grating used in the spectrometer is then replicated from this surface. Photographic tests and initial photoelectric tests with a two-dimensional, pulse-counting detector system have verified the image quality of the toroidal grating at wavelengths near 600 A. The basic designs of two instruments employing the spectrometer for astrophysical investigations in space are described, namely, a high-resolution EUV spectroheliometer for studies of the solar chromosphere, transition region, and corona; and an EUV spectroscopic telescope for studies of nonsolar objects.

Huber, M. C. E.↗

NASA NTRS1986

X-band preamplifier filter

A low-loss bandstop filter designed and developed for the Deep Space Network's 34-meter high-efficiency antennas is described. The filter is used for protection of the X-band traveling wave masers from the 20-kW transmitter signal. A combination of empirical and theoretical techniques was employed as well as computer simulation to verify the design before fabrication.

Manshadi, F.↗

NASA NTRS1978

Ultra-low-mass flexible planar solar arrays using 50-micron-thick solar cells

A conceptual design study has been completed which has shown the feasibility of ultra-low-mass planar solar arrays with specific power of 200 watts/kilogram. The beginning of life (BOL) power output of the array designs would be 10 kW at 1 astronomical unit (AU) and a 55C deg operating temperature. Two designs were studied: a retractable rollout design and a non-retractable fold-out. The designs employed a flexible low-mass blanket and low-mass structures. The blanket utilized 2 x 2 cm high-efficiency (13.5% at 28C deg AM0), ultra-thin (50 micron), silicon solar cells protected by thin (75 micron) plastic encapsulants. The structural design utilized the 'V'-stiffened approach which allows a lower mass boom to be used. In conjunction with the conceptual design, modules using the thin cells and plastic encapsulant were designed and fabricated.

Costogue, E. N.↗

NASA NTRS1980

A study of the factors which control the efficiency of ion-implanted silicon solar cells

The objective of this work was to determine experimentally the ion-implantation parameters and furnace annealing conditions required to produce high-efficiency solar cells. A comprehensive experimental study was conducted in which the optimum ion-implantation parameters were found by a systematic variation of the implant parameters followed by detailed studies of solar-cell devices. Two furnace heat-treatment techniques were found which effectively anneal the implanted layers and at the same time preserve or improve the diffusion length in the bulk silicon. Detailed characteristics of both the junction and bulk properties of solar cells fabricated over the spectrum of implant parameters are discussed. Optimized implant parameters and annealing conditions were found which allow for the fabrication of 14-15-percent (AM1) efficient solar cells.

Douglas, E. C.↗

NASA NTRS1979

Low-cost, high-efficiency silicon by heat exchanger method and fixed abrasive slicing technique

The paper describes the heat exchanger method (HEM) for growing silicon crystals. The problem of ingot cracking was solved by using a graded structure silica crucible, and vacuum processing eliminated expensive high-purity argon. Solar cells fabricated from HEM silicon demonstrated conversion efficiencies up to 15% (AM1) at low cost, using square cross-section, single crystal silicon. A modified multiblade slurry machine was adapted for multiwire fixed abrasive slicing of silicon which uses a diamond attached to wires; this method provides a conversion ratio of 1.08 sq m of wafer per kg of silicon ingot, and produces wafers free of edge chipping with a surface damage of 3-5 microns.

Khattak, C. P.↗

NASA NTRS1981

Projected performance of III-V epitaxial multijunction solar cells in space

The monolithic epitaxial multijunction stack, to be fabricated from III-V quaternary alloys, has been analyzed for use in space with a detailed computer model. AlGaInAs and AlGaAsSb three-junction cells, each having an AlAsSb window, were modeled as functions of temperature, concentration, minority carrier diffusion length, etc., as were AlGaAs/GaAs and AlGaAsSb/InP two-junction cells. Cell efficiencies for one expected operating point in space (50 suns, 125 C) were around 20% for the two-junction cells and around 23-24% for the three-junction cells, using projected minority carrier diffusion lengths of 1.5 microns. Longer diffusion lengths in the III-V alloys (approaching those of GaAs) would allow the three-junction cells to reach 30% efficiency, if such conditions as 100 suns, 50 C can be achieved. The major technological challenges facing the high-efficiency multijunction cell are summarized and discussed in light of the modeling results.

Maloney, T. J.↗

NASA NTRS1981

High efficiency thin-film GaAs solar cells

The paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology

Zwerdling, S.↗

NASA NTRS1985

New high-efficiency silicon solar cells

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

Daud, T.↗

NASA NTRS1984

Development of high-efficiency solar cells on silicon web

The development of high efficiency solar cells on a silicon web is discussed. Heat treatment effects on web quality; the influence of twin plane lamellae, trace impurities and stress on minority carrier lifetime; and the fabrication of cells are discussed.

Rohatgi, A.↗

NASA NTRS1986

Requirements for high-efficiency solar cells

Minimum recombination and low injection level are essential for high efficiency. Twenty percent AM1 efficiency requires a dark recombination current density of 2 x 10 to the minus 13th power A/sq cm and a recombination center density of less than 10 to the 10th power /cu cm. Recombination mechanisms at thirteen locations in a conventional single crystalline silicon cell design are reviewed. Three additional recombination locations are described at grain boundaries in polycrystalline cells. Material perfection and fabrication process optimization requirements for high efficiency are outlined. Innovative device designs to reduce recombination in the bulk and interfaces of single crystalline cells and in the grain boundary of polycrystalline cells are reviewed.

Sah, C. T.↗

NASA NTRS1985

Summary of high-efficiency solar-cell research

High-efficiency solar-cell activities supporting efforts to achieve the DOE Five-Year Plan goals are summarized. Specific objectives are to identify and resolve key generic problems that limit cell efficiency to below theoretically predicted values and to design and fabricate cells having efficiences equal to or greater than 20% (AM1.5). Theoretical curves for various p-n junction cells were shown. The effects of practical barriers on cell efficiency was depicted along with the modeling parameters. Cell design parameters used in the analyses were described. The usefulness and present limitations of the existing modeling capabilities were presented. The historical evolution of the efficiencies of cells made from web and edge-defined film-fed growth (EFG) silicon ribbons were also described. The status of contemporary higher-efficiency technical capabilities and future activities to raise efficiencies were stated.

Kachare, R.↗

NASA NTRS1985

Development of high-efficiency solar cells on silicon web

High-efficiency dendritic cells were discussed. The influence of twin planes and heat treatment on the location and effect of trace impurities was of particular interest. Proper heat treatment often increases efficiency by causing impurities to pile up at twin planes. Oxide passivation had a beneficial effect on efficiency. A very efficient antireflective (AR) coating of zinc selenide and magnesium fluoride was designed and fabricated. An aluminum back-surface reflector was also effective.

Rohatgi, A.↗

NASA NTRS1985

High-efficiency module design

Progress on the development of a high efficiency module is described. The effort includes development of high efficiency cells using crystalline silicon wafers from float zone silicon. Module-size cells, 53 sq cm in area, were fabricated with efficiency of 18%. Operating temperature reduction is also studied.

Spitzer, M. B.↗

NASA NTRS1986

Development of high-efficiency solar cells on silicon web

Work is reported aimed at identifying and reducing sources of carrier recombination both in the starting web silicon material and in the processed cells. Cross-sectional transmission electron microscopy measurements of several web cells were made and analyzed. The effect of the heavily twinned region on cell efficiency was modeled, and the modeling results compared to measured values for processed cells. The effects of low energy, high dose hydrogen ion implantation on cell efficiency and diffusion length were examined. Cells were fabricated from web silicon known to have a high diffusion length, with a new double layer antireflection coating being applied to these cells. A new contact system, to be used with oxide passivated cells and which greatly reduces the area of contact between metal and silicon, was designed. The application of DLTS measurements to beveled samples was further investigated.

Meier, D. L.↗

NASA NTRS1986

Development of high-efficiency solar cells on silicon web

Work was performed to improve web base material with a goal of obtaining solar cell efficiencies in excess of 18% (AM1). Efforts in this program are directed toward identifying carrier loss mechanisms in web silicon, eliminating or reducing these mechanisms, designing a high efficiency cell structure with the aid of numerical models, and fabricating high efficiency web solar cells. Fabrication techniques must preserve or enhance carrier lifetime in the bulk of the cell and minimize recombination of carriers at the external surfaces. Three completed cells were viewed by cross-sectional transmission electron microscopy (TEM) in order to investigate further the relation between structural defects and electrical performance of web cells. Consistent with past TEM examinations, the cell with the highest efficiency (15.0%) had no dislocations but did have 11 twin planes.

Meier, D. L.↗