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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Development and pilot line production of lithium doped silicon solar cells

Scaling up the BCl3 without O2 diffusion beyond 30 to 40 cells was investigated by using a 100 cell capacity diffusion boat which held the cells vertically. Sheet resistances and I-V curves were uniform with 10 to 20 cells spaced along the entire boat, so the quantity was increased to 40 and then 60 cells per diffusion. There was no change in cell output and uniformity going from 20 to 40 cells per diffusion; however only half the lithium cells fabricated from slices diffused in the 60 cell diffusion had efficiencies of 11% or better. Although uniform sheet resistances and I-V characteristic curves were obtained with up to 60 cells in the BCl3 with O2 diffusion, the short circuit currents were approximately 15% lower than the anticipated 135 to 140 mA. Consequently, work on this diffusion process has been aimed solely at increasing the short circuit current. The diffusion temperature was lowered from 1055 to 1000 and 950 C, and at each of these temperatures variations in diffusion time were investigated. At 1000 C short circuit currents were approximately 10 mA higher, 130 rather than 120 mA average.

Payne, P. A.↗
NASA NTRS1972

Shielded silicon gate complementary MOS integrated circuit.

An electrostatic shield for complementary MOS integrated circuits was developed to minimize the adverse effects of stray electric fields created by the potentials in the metal interconnections. The process is compatible with silicon gate technology. N-doped polycrystalline silicon was used for all the gates and the shield. The effectiveness of the shield was demonstrated by constructing a special field plate over certain transistors. The threshold voltages obtained on an oriented silicon substrate ranged from 1.5 to 3 V for either channel. Integrated inverters performed satisfactorily from 3 to 15 V, limited at the low end by the threshold voltages and at the high end by the drain breakdown voltage of the n-channel transistors. The stability of the new structure with an n-doped silicon gate as measured by the shift in C-V curve under 200 C plus or minus 20 V temperature-bias conditions was better than conventional aluminum gate or p-doped silicon gate devices, presumably due to the doping of gate oxide with phosphorous.

Lin, H. C.↗
NASA NTRS1991

Small-scale plasma irregularities in the nightside Venus ionosphere

The individual volt-ampere curves from the Pioneer Venus Orbiter electron temperature probe showed evidence for small-scale density irregularities, or short-period plasma waves, in regions of the nightside ionosphere where the Orbiter electric field detector observed waves in its 100-Hz channel. A survey of the nightside volt-ampere curves has revealed several hundred examples of such irregularities. The I-V structures correspond to plasma density structure with spatial scale sizes in the range of about 100-2000 m, or alternatively they could be viewed as waves having frequencies extending toward 100 Hz. They are often seen as isolated events, with spatial extent along the orbit frequently less than 80 km. The density irregularities or waves occur in or near prominent gradients in the ambient plasma concentrations both at low altitudes where molecular ions are dominant and at higher altitudes in regions of reduced plasma density where O(+) is the major ion. Electric field 100-Hz bursts occur simultaneously, with the majority of the structured I-V curves providing demonstrative evidence that at least some of the E field signals are produced within the ionosphere.

Grebowsky, J. M.↗
NASA NTRS1988

Application of the V(R) resistance curve method to fracture of various crack configurations

The fracture resistance curve method of Newman (1985), based on the crack-tip-opening displacement, V(R), for a 'stationary' crack, was applied to various crack configurations in 2024-T351 and 7075-T651 aluminum alloys tested at room temperature. Using a stationary crack solution, the crack-tip-displacement was calculated at the current crack length for the crack configurations which included compact, middle-crack, single-edge-crack, and three-hole-crack tension specimens. The results showed that the V(R) resistance curves are insensitive to crack length, specimen width, and specimen type up to maximum load. After the maximum load is reached, the V(R) remains nearly constant; this constant depends only on specimen type, specimen width, and crack length. The V(R) resistance curve method can be used with the strip-yield analyses to accurately predict stable crack growth and instability of cracked metallic materials.

Newman, J. C., Jr.↗
NASA NTRS1979

Analytical predictions of RTG power degradation

The DEGRA computer code that is based on a mathematical model which predicts performance and time-temperature dependent degradation of a radioisotope thermoelectric generator is discussed. The computer code has been used to predict performance and generator degradation for the selenide Ground Demonstration Unit (GDS-1) and the generator used in the Galileo Project. Results of parametric studies of load voltage vs generator output are examined as well as the I-V curve and the resulting predicted power vs voltage. The paper also discusses the increased capability features contained in DEGRA2 and future plans for expanding the computer code performance.

Noon, E. L.↗
NASA NTRS2003

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Lebron-Velilla, Ramon C.↗
NASA NTRS1981

Short interval testing of solar cells

A drawback of conventional electrical evaluation procedures regarding solar cells is related to time consuming operations required in the determination of specific parameters, such as the maximum power point, from the plotted curves, and to the transfer of data to a large digital computer for analysis and manipulation. This is especially true when large numbers of cells must be measured. To overcome such drawbacks, a digital short interval tester was designed and constructed. The new tester provides rapid and accurate measurements at constant temperature. The utilization of a light shutter makes it possible to measure up to 200 data points along the I-V curve in less than a second, thus avoiding thermal effects. Because the system is digital, parameters such as the maximum power may be calculated directly from the data.

Saylor, C. R.↗
NASA NTRS2002

Results of the 2001 JPL Balloon Flight Solar Cell Calibration Program

The 2001 solar cell calibration balloon flight campaign consisted of two flights, which occurred on June 26, 2001, and July 4, 2001. Fifty-nine modules were carried to an altitude of approximately 120,000 ft (36.6 km). Full I-V curves were measured on nineteen of these modules, and output at a fixed load was measured on thirty-two modules (forty-six cells), with some modules repeated on the second flight. Nine modules were flown for temperature measurement only. The data from the fixed load cells on the first flight was not usable. The temperature dependence of the first-flight data was erratic and we were unable to find a way to extract accurate calibration values. The I-V data from the first flight was good, however, and all data from the second flight was also good. The data was corrected to 28 C and to 1 AU (1.496 x 10(exp 8)km). The calibrated cells have been returned to their owners and can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, B. E.↗
NASA NTRS2001

Arc Inception Mechanism on a Solar Array Immersed in a Low-Density Plasma

In this report, results are presented of an experimental and theoretical study of arc phenomena and snapover for two samples of solar arrays immersed in argon plasma. The effects of arcing and snapover are investigated. I-V curves are measured, and arc and snapover inception voltages and arc rates are determined within the wide range of plasma parameters. A considerable increase in arc rate due to absorption of molecules from atmospheric air has been confirmed. It is shown that increasing gas pressure causes increasing ion current collection and, consequently, arc rate even though the effect of conditioning also takes place. Arc sites have been determined by employing a video-camera. It is confirmed that keeping sample under high vacuum for a long time results in shifting arc threshold voltage well below -300 V. The results obtained seem to be important for the understanding of arc inception mechanism.

Vayner, B.↗
NASA NTRS1972

Computer controlled performance mapping of thermionic converters: effect of collector, guard-ring potential imbalances on the observed collector current-density, voltage characteristics and limited range performance map of an etched-rhenium, niobium planar converter

The effect of collector, guard-ring potential imbalance on the observed collector-current-density J, collector-to-emitter voltage V characteristic was evaluated in a planar, fixed-space, guard-ringed thermionic converter. The J,V characteristic was swept in a period of 15 msec by a variable load. A computerized data acquisition system recorded test parameters. The results indicate minimal distortion of the J,V curve in the power output quadrant for the nominal guard-ring circuit configuration. Considerable distortion, along with a lowering of the ignited-mode striking voltage, was observed for the configuration with the emitter shorted to the guard ring. A limited-range performance map of an etched-rhenium, niobium, planar converter was obtained by using an improved computer program for the data acquisition system.

Manista, E. J.↗
NASA NTRS1973

Effects of proton irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

The 1 ohm-cm and 10 ohm-cm silicon solar cells were exposed to 1.0 MeV protons at a fixed flux of 10 to the 9th power P/sq cm-sec and fluences of 10 to the 10th power, 10 to the 11th power, 10 to the 12th power and 3 X 10 to the 12th power P/sq cm. I-V curves of the cells were made at room temperature, 65 C and 165 C after each irradiation. A value of 139.5 mw/sq cm was taken as AMO incident energy rate per unit area. Degradation occurred for both uncovered 1 ohm-cm and 10 ohm-cm cells. Efficiencies are generally higher than those of comparable U.S. cells tested earlier. Damage (loss in maximum power efficiency) with proton fluence is somewhat higher for 10 ohm-cm cells, measured at the three temperatures, for fluences above 2 X 10 to the 11th power P/sq cm. Cell efficiency, as expected, changes drastically with temperature.

Nicoletta, C. A.↗
NASA NTRS1972

Solid state image sensing arrays

The fabrication of a photodiode transistor image sensor array in silicon, and tests on individual elements of the array are described along with design for a scanning system for an image sensor array. The spectral response of p-n junctions was used as a technique for studying the optical-absorption edge in silicon. Heterojunction structures of Sb2S3- Si were fabricated and a system for measuring C-V curves on MOS structures was built.

Sadasiv, G.↗
NASA NTRS1973

Effects of electron irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

One OHM-cm and 10 OHM-cm silicon solar cells were exposed to 1.0 MeV electrons at a fixed flux of 10 to the 11th power e/sq cm/sec and fluences of 10 to the 13th power, 10 to the 14th power and 10 to the 15th power e/sq.cm. 1-V curves of the cells were made at room temperature, - 63 C and + or - 143 C after each irradiation. A value of 139.5 mw/sq cm was used as AMO incident energy rate per unit area. The 10 OHM-cm cells appear more efficient than 1 OHM-cm cells after exposure to a fluence greater than 10 to the 14th power e/sq cm. The 1.0 MeV electron damage coefficients for both 1 OHM-cm and 10 OHM-cm cells are somewhat less than those for previously irradiated cells at room temperature. The values of the damage coefficients increase as the cell temperatures decrease. Efficiencies pertaining to maximum power output are about the same as those of n on p silicon cells evaluated previously.

Nicoletta, C. A.↗
NASA NTRS1973

Solar array synthesis computer program

Photovoltaic characteristics have been measured on solar cells irradiated by 1 MeV electrons to fluences ranging from 1 x 10 to the 13th power e/sq cm to 1 x 10 to the 16th power e/sq cm, for cell temperatures ranging from 123 K to 473 K and for illumination intensities ranging from 5m W/sq cm to 1830m W/sq cm. Empirical equations have been derived from these measurements to describe the behavior of light generated current, open circuit voltage and I-V curve shape over various portions of these temperature/illumination ranges. Both 10 ohms/cm and 17 ohms/cm n-p silicon solar cells were tested, and similar analytical expressions were formulated for easy comparison between the two resistivities.

Faith, T. J.↗
NASA NTRS1972

Solar cell dark I-V characteristics and their applications.

This paper presents the preliminary results of studies conducted to evaluate the feasibility of and to generate techniques for the use of dark forward current-voltage characteristics in the checkout of the Apollo Telescope Mount Solar Array. Methods for the determination of lumped series resistance and prediction of the illuminated I-V curve using the dark characteristics are also presented. The paper addresses itself primarily to the generation of a valid performance testing and flight readiness checkout technique using the forward characteristics of the solar cell.

Imamura, M. S.↗