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DOE OSTI2021

Voltage-Dependent Barrier Height of Electron Transport through Iron Porphyrin Molecular Junctions

Electron transport through iron porphyrin (FeP) molecules self-assembled on a gold (Au) substrate was investigated using conductive atomic force microscopy (AFM) to measure current–voltage (I–V) characteristics. In the direct tunneling region (|V| ≤ 0.1 V), the Simmons model was used to characterize the electron transport. Furthermore, the energy barrier between the Fermi energy level of Au and the highest occupied molecular orbital (HOMO) level of the FeP molecule was determined to be between 0.3 and 0.6 eV; the range of the electron attenuation coefficient was 0.6–0.8 Å–1. Instead of a constant barrier height, a voltage-dependent barrier height was adapted to simulate the experimental I–V curves over the entire voltage range (|V| ≤ 2 V) using the Simmons model for the intermediate case. The voltage-dependent barrier height is supported by a previously predicted response of molecular-projected self-consistent Hamiltonian orbitals. The dependence showed that the HOMO level relative to the Fermi energy level of the Au electrode decreased as the bias voltage increased. To verify the deposition of the FeP on the Au substrate, Raman spectroscopy and AFM analysis were performed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2026

Bio-Inspired Energy-Efficient Nanofabricated Electrical Contacts

Nanoscale electrical contacts, especially those between materials of dissimilar electronic properties, often represent one of the main causes of drops in energy transfer efficiency. They are also among the sources of above-threshold noise, and their performance often decreases over the lifetime of the nanodevices. Scale-down limitations from mesoscopic to nanoscale devices, and likewise, of nanoscale to quantum-scale devices are also impeded by contacts’ quality. Making more reliable, energy-efficient electrical contacts is among the goals of the nanoelectronics research within the framework of energy-efficient electronic systems. This report focuses on the design, nanofabrication, and testing of novel shapes of electrical contacts. Lithography and nanofabrication were utilized to mimic the approximate shape of insect setae for mesoscale contacts design. The contacts are tested for elementary charge transport via I–V curves and for the broadband, 1/f noise. Tests show that contacts design leads to a measurable decrease in the energy necessary to operate a contact as a switch by at least 12–20%, depending on temperature, while broadband noise shows measurably lower power spectra, for bio-inspired contacts. The proposed method is open to modifications and improvements as required by various on-chip applications.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Negative linear compressibility in Se at ultra-high pressure above 120 GPa

A series of in situ synchrotron X-ray diffraction (XRD) measurements were carried out, combined with first-principles calculations, to study structural phase transitions of selenium at high pressures and room temperature. Several phase transitions were observed, among which an isostructural phase transition was found at around 120 GPa for the first time. Evolved from the rhombohedral (space group R$\bar{3}$m) structure (Se-V), the new phase (Se-V') exhibited an interesting increase of lattice parameter a at pressures from 120 to 148 GPa, known as negative linear compressibility (NLC). The discovery of NLC behavior observed in this work is mainly attributed to the accuracy and fine steps controlled by the membrane system for in situ XRD data collected with an exposure time of 0.5 s. After 140 GPa, a body-centered cubic (b.c.c.) structure Se-VI (space group Im$\bar{3}$m) was formed, which remains stable up to 210 GPa, the highest pressure achieved in this study. The bulk moduli of phases Se-V, Se-V' and Se-VI were estimated to be 83 ± 2, 321 ± 2 and 266 ± 7 GPa, respectively, according to the P–V curve fit by the third-order Birch–Murnaghan equation of state. The Se-V' phase shows a bulk modulus almost 4 times larger than that of the Se-V phase, which is mainly due to the effect of its NLC. NLC in a higher pressure range is always more significant in terms of fundamental mechanism and new materials discovery, yet it has barely been reported at pressures above 100 GPa. This will hopefully inspire future studies on potential NLC behaviors in other materials at ultra-high pressure.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Properties of Low Tc AlMn TES

Low Tc AlMn transition-edge sensors (TESs) have been developed as sensitive thermometers for the Q-Array, which will use superconducting targets to measure the coherent elastic neutrino nucleus scattering spectrum in the RICOCHET experiment. The TESs are made of manganese-doped aluminum with a titanium and gold antioxidation layer. A prototype TES thermometer consists of two TESs in parallel, an input gold pad in metallic contact with the TESs and an output gold pad and gold thermal link meanders, which are each designed to control the flow of heat through the TESs. We have fabricated and measured low TC AlMn TES chips with or without thermal flow control structures. We present TC measurements of the TESs after the initial fabrication and further TC tuning by re-heating and summarize the thermal property studies of the prototype TES thermometer by measuring I-V curves and complex impedance.

Coherent elastic neutrino nucleus scattering, Cryo↗

DOE OSTI2021

Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 10 10 Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of 241 Am.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2022

Cell dark current–voltage from non-calibrated module electroluminescence image analysis

Here, we present a fast, accurate, and reliable method of obtaining cell dark current–voltage (I–V) curves from module electroluminescence (EL) images without requiring calibration or correction. For a pristine module, EL-derived dark I–V are compared to directly probed data for a variety of changing imaging parameters: camera sensor, lens, filter, aperture width, exposure time (level of sensor saturation), number of images used, and various combinations of these. Pristine modules and those experiencing different modes and degrees of degradation are examined. A recent study of modules using five different cell technologies demonstrates the practicality of our “EL sweep” technique for performance and degradation studies.

14 SOLAR ENERGY↗

DOE OSTI2024

Field-Emission Properties of Vertically Aligned Carbon Nanotube Cathodes of Varying Geometries

This work characterizes the bulk emission properties of carbon nanotube (CNT) forest cathodes fabricated with various geometries. Geometries explored include dense nanotube forests of varying height grown on 5×5 mm silicon (Si) substrates and discrete, patterned CNT pillars fabricated using UV photolithography. Dense forests heights ranged from 526 μ m to 1.41 mm, with packing fraction for dense forest calculated to be 4e10 nanotubes/cm2 based on an average nanotube separation distance of 100 nm for fixed growth dense forests. Patterned sample micro pillar heights ranged from 47 to 393 μ m with pillar widths on tested samples ranging from 250 to 270 μ m . Properties explored include emission current, turn-on field, and emission current performance over time. A parallel plate electron beam diode with a 100- μ m A-K gap and an automated test apparatus were developed to provide a configurable experiment that provides accurate and repeatable measurements for dc, dc sweep, and timed performance testing. Operating voltages for the voltage sweeps spanned from 0 to −350 V. Furthermore, testing has shown evidence of a hysteresis effect on the emission current tied to the applied field history as well as shifting of the turn-on field magnitude throughout the testing period, suggesting a conditioning effect during use. Three separate emission regions in the I–V curves during sweep testing have also been observed. In the geometric study, dense forests and patterned samples were sweep tested up to a peak applied voltage of −250 V, with the taller samples generally performing better. Currents produced in the geometric study from the dense forest emitters ranged from 36.8 to 572.34 μ A , with current densities ranging from 15 to 2.29 mA/cm2. Currents produced from the patterned micropillar emitters ranged from 39.4 to 317.51 μ A , with current densities ranging from 67 to 3 mA/cm2. DC time testing s...

36 MATERIALS SCIENCE↗

DOE OSTI2023

Electropolishing parameters study for surface smoothening of low-$\beta$650 MHz five-cell niobium superconducting radio frequency cavity

Electropolishing (EP) is applied to niobium (Nb) superconducting radio frequency (SRF) cavities, which are used in particle accelerators for their surface treatment. The EP process for 1.3 GHz cavities has been extensively studied earlier. In this work, a parametric study on EP of low-β (0.61) 650 MHz Nb SRF cavities (LB650), which will be used in pre-production cryomodule for proton improvement plan-II (PIP-II) linear accelerator, was conducted to determine adequate EP conditions for attaining a smooth surface of the cavities. EP performed with the standard parameters and an initial cathode (cathode-I) having a cathode surface area of ~5% of the cavity surface area yielded a rough equator surface of the cavity. The grain step height on the equator weld position was measured to be ~ 32 μm. The rough surface was attributed to preferential grain etching confirmed by a polarization curve showing a linear relationship between the EP current and voltage and the absence of the current plateau region. The cathode was modified to make its surface area twice that of cathode-I. The modified cathode (cathode-M) provided a current plateau region in the corresponding I-V curves measured at different cavity temperatures. The onset voltage for the plateau was found to be higher at higher cavity temperatures. Here this study revealed that even with cathode-M, the standard 18 V was low for EP of such large-sized cavities when the cavity temperature was 18 °C. EP performed at a higher voltage of 22–24.5 V with cathode-M yielded a smooth surface with a grain step height of only 0.6 μm. The applied EP conditions also improved removal uniformity along the cavity length. In contrast to the cavity treated with cathode-I, the cavities treated with cathode-M achieved a significantly higher accelerating gradient (E acc ) in vertical tests conducted in a cryostat at 2 K. The modified EP was found efficient to produce the cavities that achieved E acc of 22.4 MV/m, required by PIP II project in the baseline RF tests, to qualify for further surface processing used to enhance their quality factors.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2023

Use of non-contact voltmeter to quantify potential induced degradation in CdTe modules

Potential induced degradation (PID) is a significant reliability issue for photovoltaic modules in the field. Conventionally, to detect the PID-affected modules, all the modules in a string are individually disconnected and measured using I-V (current–voltage) tracers. It is extremely time-consuming, expensive and unsafe (if the module connectors are field aged) approach. In our approach, we aim detecting the PID-affected modules quickly, inexpensively and safely without disconnecting individual modules in the string. In this study, contactless electrostatic voltmeter’s (ESV) strength was explored to detect the PID-affected cadmium telluride (CdTe) modules in a string. These contactless measurements on high-voltage PV strings could make this technique unique and preferable to detect PID-affected modules in a string compared to the I-V curve method. In this work, a CdTe module was stressed for PID using the Aluminum (Al) foil method in a walk-in environmental chamber, which resulted in a reduction of module's peak current (I max ), peak voltage (Vmax), and fill factor (FF), and hence power (Pmax). Outdoor light I-V, EL, and ESV measurements were performed pre- and post-PID to determine the effectiveness of the non-contact ESV technique. Further, the ESV technique successfully detected the change in V max , and hence Pmax, compared to the pre-and post-PID conditions. A difference of less than 2% was observed in the results of the non-contact and non-interruptive method compared to the conventionally used interruptive voltmeter or I-V tracer method. This technique and the test results demonstrate a significant promise to identify poor-performing modules in PV string without disconnection of individual modules in the string.

14 SOLAR ENERGY↗

DOE OSTI2024

Diagnosis of PV Cell Passivation Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on the cell ("AR c corrosion") was previously observed in studies using hot-humid test conditions with external high voltage (HV) bias. Because AR c corrosion is not well understood, mini-modules (MiMos) were examined in a comparative experiment using PERC and PERT as well as legacy Al-BSF cells. For separate MiMos with the cell circuit electrical at +1500 V, -1500 V, or unbiased "V oc", test conditions in the comparative study included 60degrees C/60% RH for 96 h, as in IEC TS 62804-1; 70degrees C/70%RH for 200 h; and 85degrees C/85% RH for 200 h. Characterizations at each read point included: camera and electroluminescence (EL) imaging, colorimetry, and I-V curve tracing. Characterizations at the final read point included: SunsVoc; spatially mapping external quantum efficiency (EQE); high resolution: photoluminescence (PL), EL, and dark lock-in thermographic (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS) and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos (stepped HV aging) and full-sized modules (outdoor aging) from previous studies. AR c corrosion was specifically observed for the glass/encapsulant/cell side of +1500 V (HV+) stressed MiMos, where appearance, color, and reflectance were the characteristics most distinguished relative to simultaneously occurring degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to silicon oxide or hydrous silica, preferentially occurring at the edges and tips of the pyramidal textured cell surface.

aging↗

DOE OSTI2025

Diagnosis of PV Cell Antireflective Coating Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on a photovoltaic cell ("ARc corrosion") has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable, legacy aluminum back surface field (Al-BSF) cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, -1500 V, or unbiased ("Voc") potential, which were sequentially subjected to test conditions of 60deg C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission (IEC) Technical Specification 62804-1; 70 deg C/70% RH for 200 h; and 85 deg C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current-voltage (I-V) curve tracing. Final characterizations included: Suns-Voc; spatial mapping of external quantum efficiency (EQE); high-resolution photoluminescence (PL), EL, and dark lock-in thermography (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ARc corrosion was specifically seen for the glass/encapsulant/cell side of the +1500V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline-corrosion and -delamination as well as other concurrent degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.

14 SOLAR ENERGY↗

DOE OSTI2022

Structure of Shock Waves and Inelasticity in Shock-Compressed Cemented Tungsten Carbides

In this study, shock wave experiments are conducted on General Carbide cemented tungsten carbide with 3.7wt.% cobalt binder to determine its shock-induced compression behavior up to 100 GPa. The measured wave profiles indicate the cemented tungsten carbide to undergo elastic-plastic deformation during shock compression. A three-stage particle velocity profile is observed in the experiments -- an initial elastic-rise to the Hugoniot Elastic Limit (HEL), an elastic-plastic ramp indicating substantial post-yield hardening, and finally a rise to the peak shocked Hugoniot state. The results of the experiments are used to determine the HEL, the shock velocity (U s ) vs. particle velocity (u p ) Hugoniot relation, and the longitudinal stress (σ x ) vs. specific volume (V) curve for the samples. The HEL of the material was determined to lie between 4.41 GPa and 4.58 GPa. The U s - u p relation was determined to be U s = 4.97 + 1. 457u p for particle velocities greater than 0.75 km/s. The measured plastic shock velocities for particle velocities less than 0.7 km/s were found to be larger than those predicted using the linear U s - u p Hugoniot relationship, indicating the cemented WC samples to preserve substantial shear strength in the post-yield deformation region. No phase transformation was observed up to 100 GPa.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Enhancing the performance of the perovskite solar cells by modifying the SnO 2 electron transport layer

The tin oxide (SnO 2 ) electron transport layer (ETL) plays a vital role in the photo-conversion efficiency (PCE) and stability of organic-inorganic perovskite solar cells (PSCs). However, SnO 2 ETL-induced defects such as hydroxyl groups, oxygen vacancies, exposed Sn atoms, and dangling bonds hinder device performance. In this study, rubidium chloride (RbCl) has been used to modify the SnO 2 ETL. Perovskite film formed on the RbCl-modified SnO 2 ETL exhibits improved crystallinity with enlarged grain size and reduced grain boundaries and enhanced optical absorption. Further, the Hall-effect measurements indicate the improved carrier mobility, and the dark J-V curve shows the increment of electrical conductivity for the RbCl-modified SnO 2 ETL. X-ray photoelectron spectroscopy (XPS) results demonstrate the surface defects passivation of the perovskite layer by modifying the SnO 2 ETL. A champion PCE of 19.35% has been achieved for the RbCl-modified SnO 2 ETL-based devices with improved stability, while the control devices with unmodified SnO 2 ETL show a PCE of 17.18%.

14 SOLAR ENERGY↗

DOE OSTI2021

Physical Properties of Candidate X-ray Detector Material Rb 4 Ag 2 BiBr 9

Recently, metal halide perovskites have emerged as promising semiconductor candidates for sensitive X-ray photon detection due to their suitable band gap energies, excellent charge transport properties, and low material cost afforded by their low-temperature solution-processing preparation. Furthermore, we report an improved methodology for single crystal growth and thermal and electrical properties of a two-dimensional (2D) layered halide material Rb 4 Ag 2 BiBr 9 , which has been identified as a potential candidate for X-ray radiation detection applications. The measured heat capacity for Rb 4 Ag 2 BiBr 9 implies that there are no structural phase transitions upon cooling. Temperature dependence of thermal transport measurements further suggests remarkably low thermal conductivities of Rb 4 Ag 2 BiBr 9 that are comparable to the lowest reported in literature. The bulk crystal resistivity is determined to be 2.59 × 10 9 Ω·cm from the current–voltage (I–V) curve. Density of trap states is estimated to be ~10 10 cm –3 using the space-charge-limited-current measurements. The fabricated Rb 4 Ag 2 BiBr 9 -based X-ray detector shows good operational stability with no apparent current drift, which may be ascribed to the 2D crystal structure of Rb 4 Ag 2 BiBr 9 . Finally, by varying the X-ray tube current to change the corresponding dose rate, the Rb4Ag2BiBr9 X-ray detector sensitivity is determined to be 222.03 μC Gy –1 cm –2 (at an electric field of E = 24 V/mm).

36 MATERIALS SCIENCE↗

DOE OSTI2021

Multiterminal Inverse AC Josephson Effect

When a Josephson junction is exposed to microwave radiation, it undergoes the inverse AC Josephson effect–the phase of the junction locks to the drive frequency. As a result, the I–V curves of the junction acquire “Shapiro steps” of quantized voltage. If the junction has three or more superconducting contacts, coupling between different pairs of terminals must be taken into account and the state of the junction evolves in a phase space of higher dimensionality. Here, we study the multiterminal inverse AC Josephson effect in a graphene sample with three superconducting terminals. We observe robust fractional Shapiro steps and correlated switching events, which can only be explained by considering the device as a completely connected Josephson network. We successfully simulate the observed behaviors using a modified two-dimensional RCSJ model. Our results suggest that multiterminal Josephson junctions are a playground to study highly connected nonlinear networks with novel topologies.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2025

Light induced ion migration studies in perovskite solar cell using nonlinear impedance spectroscopy

Complex interactions between mobile ions and charge carriers in perovskite solar cells (PSCs) make it challenging to fully understand their dynamic interplay. Exposure to light further complicates these interactions, altering the system’s dynamics and inducing nonlinear effects that lead to changes in the J−V curve. Understanding these effects is crucial for improving the operational stability of PSCs. Impedance spectroscopy (IS) is a powerful technique for evaluating relaxation processes in the frequency domain; however, it is limited in capturing nonlinear contributions. Here, in this work, nonlinear impedance spectroscopy (NLIS) is employed to analyze the higher harmonic response to AC perturbation, both in the dark and after short-term light exposure. A shift in the low-frequency (LF) higher harmonic peak is observed after open-circuit light exposure, attributed to an altered electric field suggesting ion re-distribution, whereas closed-circuit exposure shows no LF shift, indicating minimal ion movement. Additionally, light exposure reduces higher-order admittance, more notably in open-circuit conditions, suggesting decreased recombination. Temperature-dependent analysis was conducted to characterize the activation energy of migrating species, identifying iodide as the dominant migrating ion.

14 SOLAR ENERGY↗

DOE OSTI2023

Controlled Dielectric Breakdown to Form Pinhole Passivating Contacts

This contribution explores an alternate route to forming pinhole-based poly-Si/dielectric/c-Si passivating contacts. The method utilizes controlled dielectric breakdown or electroforming to produce nanoscale pinholes in a thick (non-tunnelling) dielectric which, when annealed, allows dopant atoms to pass from doped poly-Si through the pinholes and into the c-Si wafer, forming conductive pathways. We show that the pinholes lose passivation after electroforming but can be repassivated with a forming gas anneal. N-type contacts show contact resistivities of ~20 mOhm-cm2, but p-type contacts are ~100 mOhm-cm2. Devices show a distinct kink in the J-V curve indicative of a barrier to transport. The method can be expanded to optimized dielectric passivation stacks (not just thin, single layers) and can be formed in parallel over the faces of the wafer in selected areas (pinholes only under the grid lines).

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗

DOE OSTI2023

Effect of surface functional groups on MXene conductivity

In this work, we report the in-plane electron transport in the MXenes (i.e., within the MXene layers) as a function of composition using the density-functional tight-binding method, in conjunction with the non-equilibrium Green’s functions technique. Our study reveals that all MXene compositions have a linear relationship between current and voltage at lower potentials, indicating their metallic character. However, the magnitude of the current at a given voltage (conductivity) has different trends among different compositions. For example, MXenes without any surface terminations (Ti 3 C 2 ) exhibit higher conductivity compared to MXenes with surface functionalization. Among the MXenes with –O and –OH termination, those with –O surface termination have lower conductivity than the ones with –OH surface terminations. Interestingly, conductivity changes with the ratio of –O and –OH on the MXene surface. Our calculated I–V curves and their conductivities correlate well with transmission functions and the electronic density of states around the Fermi level. The surface composition-dependent conductivity of the MXenes provides a path to tune the in-plane conductivity for enhanced pseudocapacitive performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗