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Vapor phase growth method for single crystalline preparation of gallium nitride, gallium arsenide alloy, and gallium antimonide alloy
Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony alloy semiconductor materials
Heteroepitaxy of GaAs films on sapphire and spinel substrates
Vapor phase growth and properties of semiconductor materials
An increase in the quantum efficiency of a 3-5 photocathode is achieved by doping its semiconductor material with an acceptor and nitrogen, a column-5 isoelectronic element, that introduces a spatially localized energy level just below the conduction band similar to a donor level to which optical transitions can occur. This increases the absorption coefficient, alpha without compensation of the acceptor dopant. A layer of a suitable 1-5, 1-6 or 1-7 compound is included as an activation layer on the electron emission side to lower the work function of the photocathode.
In addition to the existing materials growth laboratory, the photolithographic facility and the device testing facility were completed. The majority of equipment for data acquisition, solar cell testing, materials growth and device characterization were received and are being put into operation. In the research part of the program, GaAs and GaA1As layers were grown reproducibly on GaAs substrates. These grown layers were characterized as to surface morphology, thickness and thickness uniformity. The liquid phase epitaxial growth process was used to fabricate p-n junctions in Ga(1-x)A1(x)As. Sequential deposition of two alloy layers was accomplished and detailed analysis of the effect of substrate quality and dopant on the GaA1As layer quality is presented. Finally, solar cell structures were formed by growing a thin p-GaA1As layer upon an epitaxial n-GaA1As layer. The energy gap corresponding to the long wavelength cutoff of the spectral response characteristic was 1.51-1.63 eV. Theoretical calculations of the spectral response were matched to the measured response.
In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.
High speed, electrostatic photomultipliers were developed for use in 400 megabit laser communication systems operating at the 1.06 micron wavelength. A high performance, electrostatic III-V photocathode PMT was shown in communication system tests to perform competitively with solid state and avalanche photodiodes. Signal-induced noise and III-V cathode stability were identified as remaining technical problems while cathode quantum efficiencies of or = 5% at 1.06 micron and 320 picosecond rise and fall time pulse performance were achieved.
The M512 Materials Processing Facility, which is the main item of equipment for the Skylab space manufacturing experiments is described. It is basically an electron-beam welding apparatus, consisting of a battery power supply, a 20-kV electron beam source, and a spherical 40-cm-diam vacuum chamber. It will be used to perform the M551 Metals Melting Experiment, the M552 Exothermic Brazing Experiment, the M553 Sphere Forming Experiment, the M554 Composite Casting Experiment, the M555 Gallium Arsenide Crystal Growth Experiment, the M561 Whisker-Reinforced Composites Experiment, the M562 Indium Antimonide Crystal Growth, Experiment, the M563 Mixed III-V Crystal Growth Experiment, the M564 Alkali Halide Eutectics Experiment, the M565 Silver Grids Melted in Space Experiment, and the M566 Copper-Aluminum Eutectic Experiment. Three apparatus systems designed to broaden the technical scope of the experiments and to gain experience with new experimental techniques are described. These are an electrophoretic separator, an electromagnetic levitation system, and a versatile electric furnace with an electronic control system.
Research on the growth of single crystals of the III-V compound indium antimonide was pursued in order to gain a firsthand knowledge of some factors which govern the growth of single crystals of this compound. These studies were conducted using a standard Czochralski crystal pulling furnace. This type of furnace allows crystals to be formed without being constrained to a crucible. Several factors were found to have a large detrimental effect on the growth of single crystals of indium antimonide, the most important of which seems to be the degree to which the environment surrounding the crystal during growth can be controlled. Ways to overcome these effects were determined and are outlined.
We have computed populations of 16 levels of Si III-V and radiation fields in all connecting transitions; in particular the first six Si III triplet levels, including the 4553 line, and the first six Si IV levels including 4089. The computations were done for four non-LTE H-He model atmospheres, provided by Auer and Mihalas. Estimates of corresponding MK types are B1.5 V, B0.5 V, O9 V, and O6. Solutions were obtained by iterating the linearized equations of radiative transfer and statistical equilibrium, except that for less important lines an approximate equivalent two-level atom treatment was used. Continuous opacities of C, N, O, and Ne were included. All abundances were solar values.
Zinc-doped InGaAsP quaternary III-V material of the proper composition range shows superior photoemission properties to either InGaAs or InAsP ternary material. The minority-carrier diffusion length in the quaternary material is at least as long as that in InAsP and much longer than observed in InGaAs. The barrier height at the InGaAsP-Cs2O interface is lowered by cooling, giving increased electron escape probability and new highs in quantum efficiency over a wide wavelength range. For example, a 1.06-micron quantum efficiency of 7.5%/incident photon was observed at -90 C.
The theory of heterojunction and graded bandgap solar cells was studied to help determine the material compositions and device dimensions needed for high efficiency solar cells. Because of the involved analysis of the fundamental equations describing solar cell operation, a general numerical device analysis program was used. A major part of the initial work was involved in modifying an existing silicon solar cell analysis program to account for the unique features of graded bandgap and heterojunction solar cells. The most successful III-V solar cells have so far been constructed in the GaAs and Gal-xAlxAs material systems; this project was concerned with such solar cells. The most efficient solar cell so far evaluated is an abrupt heterojunction cell with a pure AlAs layer at the surface with a GaAs substrate. The predicted efficiency for this cell is slightly larger than that of a graded bandgap Gal-xAlxAs solar cell.
The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.
The III-V semiconducting compound AlSb shows promise as a highly efficient solar cell material, but it has not been commercially exploited because of difficulties in compound synthesis. Liquid state homogenization and solidification of AlSb were carried out in the Apollo-Soyuz Test Project Experiment MA-044 in the hope that compositional homogeneity would be improved by negating the large density difference between the two constituents. Post-flight analysis and comparative characterization of the space-processed and ground-processed samples indicate that there are major homogeneity improvements in the low-gravity solidified material.
New experimental results are reported for structural transitions at high pressure in several III-V compounds and two II-VI compounds. These data, together with earlier results, are then compared with the predictions of model calculations of Van Vechten. Experimental transition pressures are often at variance with calculated values. However, his calculation assumes that the high pressure phase is metallic, with the beta-Sn structure. The present results show that several compounds assume an ionic NaCl structure at high pressure, while others have neither the beta-Sn nor NaCl structure.
Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.
Ultraviolet emission-line spectra of A, F, and early G stars have been observed with the International Ultraviolet Explorer. For supergiants, classical chromospheric and transition-layer emission is seen only on the red side of the Cepheid instability strip. For luminosity classes III-V, chromospheric emission can be detected for spectral types F2 and later. For none of the A stars was normal chromospheric emission detected, regardless of their rotational velocities or peculiarities (i.e., Am or Ap).