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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Superconductivity found in meteorites

Meteorites can contain a wide range of material phases due to the extreme environments found in space and are ideal candidates to search for natural superconductivity. However, meteorites are chemically inhomogeneous, and superconducting phases in them could potentially be minute, rendering detection of these phases difficult. To alleviate this difficulty, we have studied meteorite samples with the ultrasensitive magnetic field modulated microwave spectroscopy (MFMMS) technique [J. G. Ramírez, A. C. Basaran, J. de la Venta, J. Pereiro, I. K. Schuller, Rep. Prog. Phys. 77, 093902 (2014)]. Here, we report the identification of superconducting phases in two meteorites, Mundrabilla, a group IAB iron meteorite [R. Wilson, A. Cooney, Nature 213, 274–275 (1967)] and GRA 95205, a ureilite [J. N. Grossman, Meteorit. Planet. Sci. 33, A221–A239 (1998)]. MFMMS measurements detected superconducting transitions in samples from each, above 5 K. By subdividing and remeasuring individual samples, grains containing the largest superconducting fraction were isolated. The superconducting grains were then characterized with a series of complementary techniques, including vibrating-sample magnetometry (VSM), energy-dispersive X-ray spectroscopy (EDX), and numerical methods. Finally, these measurements and analysis identified the likely phases as alloys of lead, indium, and tin.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Development of Lattice-Mismatched GaInAsP for Radiation Hardness

We develop lattice-mismatched GaInAsP as an alternative alloy to pure As-based alloys currently used in III-V multijunction solar cells. Increasing the alloy phosphorous and indium content while maintaining an optimal bandgap may allow high efficiency multijunction devices with increased radiation hardness. Here, 1.0-eV GaInAsP is developed and implemented into single and multijunction solar cell devices. The lattice-mismatched GaInAsP must be grown strain free, and the subcell thickness must be maintained below the thickness where surface-driven phase separation occurs. As observed in transmission electron microscopy and cathodoluminescence imaging, phase separation strengthens in the GaInAsP layer and leads to interfacial defect formation when the cell thickness is too great. We show single junction 1.0-eV Ga 0.5 In 0.5 As 0.7 P 0.3 with excellent carrier collection and a bandgap-voltage offset of 0.40 V. This material quality approaches that of 1.0-eV Ga 0.7 In 0.3 As used in inverted metamorphic multijunction devices, but has increased phosphorus content and consequently is expected to have a higher radiation resistance. We incorporate the 1.0-eV GaInAsP subcell into a 3-junction inverted metamorphic solar cell to test the performance of the subcell in a multijunction. No additional loss is observed upon integration into a multijunction cell: both the carrier collection and voltage of the GaInAsP subcell are unchanged from single junction devices. While further materials development and radiation testing is still required, these preliminary results indicate that lattice-mismatched GaInAsP can be effectively used in multijunction solar cells to replace radiation-soft materials.

14 SOLAR ENERGY↗
DOE OSTI2023

Turn‐on Circularly Polarized Luminescence in Chiral Indium Chlorides by 5s 2 Metal Centers

Abstract Introducing chirality into the metal‐halide hybrids has enabled many emerging properties including chiroptical activity, spin‐dependent transport, and ferroelectricity. However, most of the chiral metal‐halide hybrids to date are non‐emissive, and the underlying mechanism remains elusive. Here, we show a new strategy to turn on the circularly polarized luminescence (CPL) in chiral metal‐halide hybrids. We demonstrate that alloying Sb 3+ into chiral indium‐chloride hybrids dramatically increases the photoluminescence quantum yield in two new series of chiral indium‐antimony chlorides. These materials exhibit strong CPL signals with tunable energy and a high dissymmetry factor up to 1.5×10 −2 . Mechanistic studies reveal that the emission originates from the self‐trapped excitons centered in 5s 2 Sb 3+ . Moreover, near‐ultraviolet pumped white light is demonstrated with a polarization up to 6.0 %. Our work demonstrates new strategies towards highly luminescent chiral metal‐halide hybrids.

Wang, Zhiyu↗
DOE OSTI2021

Confined Ni-In intermetallic alloy nanocatalyst with excellent coking resistance for methane dry reforming

Carbon dioxide and methane are two main greenhouse gases which are contributed to serious global warming. Fortunately, dry reforming of methane (DRM), a very important reaction developed decades ago, can convert these two major greenhouse gases into value-added syngas or hydrogen. The main problem retarding its industrialization is the seriously coking formation upon the nickel-based catalysts. Herein, a series of confined indium-nickel (In-Ni) intermetallic alloy nanocatalysts (In x Ni@SiO 2 ) have been prepared and displayed superior coking resistance for DRM reaction. The sample containing 0.5 wt.% of In loading (In 0.5 Ni@SiO 2 ) shows the best balance of carbon deposition resistance and DRM reactivity even after 430 h long term stability test. The boosted carbon resistance can be ascribed to the confinement of core–shell structure and to the transfer of electrons from Indium to Nickel in In-Ni intermetallic alloys due to the smaller electronegativity of In. Additionally, both the silica shell and the increase of electron cloud density on metallic Ni can weaken the ability of Ni to activate C–H bond and decrease the deep cracking process of methane. The reaction over the confined InNi intermetallic alloy nanocatalyst was conformed to the Langmuir-Hinshelwood (L-H) mechanism revealed by in situ diffuse reflectance infrared Fourier transform spectroscopy (in-situ DRIFTS). This work provides a guidance to design high performance coking resistance catalysts for methane dry reforming to efficiently utilize these two main greenhouse gases.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

All‐Liquid Reconfigurable Electronics Using Jammed MXene Interfaces

Abstract Rigid, solid‐state components represent the current paradigm for electronic systems, but they lack post‐production reconfigurability and pose ever‐increasing challenges to efficient end‐of‐life recycling. Liquid electronics may overcome these limitations by offering flexible in‐the‐field redesign and separation at end‐of‐life via simple liquid phase chemistries. Up to now, preliminary work on liquid electronics has focused on liquid metal components, but these devices still require an encapsulating polymer and typically use alloys of rare elements like indium. Here, using the self‐assembly of jammed 2D titanium carbide (Ti 3 C 2 T x ) MXene nanoparticles at liquid–liquid interfaces, “all‐liquid” electrically conductive sheets, wires, and simple functional devices are described including electromechanical switches and photodetectors. These assemblies combine the high conductivity of MXene nanosheets with the controllable form and reconfigurability of structured liquids. Such configurations can have applications not only in electronics, but also in catalysis and microfluidics, especially in systems where the product and substrate have affinity for solvents of differing polarity.

36 MATERIALS SCIENCE↗
DOE OSTI2021

CIGS photovoltaics: reviewing an evolving paradigm

Copper indium selenide chalcopyrite-structure alloys with gallium (CIGS) are unique among the highest performing photovoltaic (PV) semiconductor technologies. They are structurally disordered, nonstoichiometric materials that have been engineered to achieve remarkably low bulk nonradiative recombination levels. Nevertheless, their performance can be further improved. This review adopts a fundamental thermodynamic perspective to comparatively assess the root causes of present limitations on CIGS PV performance. The topics of selectivity and passivation of contacts to CIGS and its multinary alloys are covered, highlighting pathways to maximizing the electrochemical potential between those contacts under illumination. Further, an overview of absorber growth methods and resulting properties is also provided. We recommend that CIGS researchers consider strategies that have been successfully implemented in the more mature wafer-based GaAs and Si PV device technologies, based on the paradigm of an idealized PV device design using an isotropic absorber with minimal nonradiative recombination, maximal light trapping, and both electron-selective and hole-selective passivated contacts. We foresee that CIGS technology will reach the 25% efficiency level within the next few years through enhanced collection and reduced recombination. To significantly impact power-generation applications, cost-effective, manufacturable solutions are also essential.

14 SOLAR ENERGY↗
DOE OSTI2022

Turn-on Circularly Polarized Luminescence in Chiral Indium Chlorides by 5s 2 Metal Centers

Introducing chirality into the metal-halide hybrids has enabled many emerging properties including chiroptical activity, spin-dependent transport, and ferroelectricity. However, most of the chiral metal-halide hybrids to date are non-emissive, and the underlying mechanism remains elusive. Here, in this study, we show a new strategy to turn on the circularly polarized luminescence (CPL) in chiral metal-halide hybrids. We demonstrate that alloying Sb 3+ into chiral indium-chloride hybrids dramatically increases the photoluminescence quantum yield in two new series of chiral indium-antimony chlorides. These materials exhibit strong CPL signals with tunable energy and a high dissymmetry factor up to 1.5×10 -2 . Mechanistic studies reveal that the emission originates from the self-trapped excitons centered in 5s 2 Sb 3+ . Moreover, near-ultraviolet pumped white light is demonstrated with a polarization up to 6.0 %. Our work demonstrates new strategies towards highly luminescent chiral metal-halide hybrids.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Compatibility of LaFe13−x−yMnxSiyH1.6 and Eutectic Liquid GaInSn Alloy

The heat transfer rate of magnetocaloric regenerators is a topic of extensive research and the cyclability of these regenerators is critical to the operation of systems with a high coefficient of performance (e.g., potentially >22, significantly higher than typical vapor compression cooling technologies). To enable a high operating frequency that will result in a high specific cooling power, the heat transfer fluid should have high thermal conductivity and lower specific heat, i.e., higher thermal diffusivity. Eutectic metal alloys possess these qualities, such as gallium–indium–tin (Galinstan), whose thermal diffusivity has been found to be approximately an order of magnitude higher than water. For this study, the effects of eutectic liquid Galinstan exposure on the phase stability of LaFe13−x−yMnxSiyH1.6 magnetocaloric powders in an active magnetic regenerator device were investigated. The powders were characterized before and after exposure to Galinstan using X-ray diffraction, in which the phases were determined using the Rietveld refinement technique and X-ray fluorescence. It was found that after Galinstan exposure, hydrogen containing phases were present in the powder, suggesting that the hydrogen was lost from the magnetocaloric phase. The magnetocaloric phase degradation indicates that the powder was incompatible with the Galinstan metal in an environment with moisture.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Development of rare-earth-free bulk magnets with energy product up to 12 MGOe in field annealed Mn–Bi–Mg–In–Sb alloys

A treatment consisting of annealing in a moderately strong, ≤30 kOe, magnetic field was applied to arc-melted ingots and compacted melt-spun alloys with composition Mn 50 Bi 50-x-y-z Mg x In y Sb z . The high degree of texture of the magnetic α phase induced with annealing of the ingot samples (except the Mn–Bi–Sb one) allowed for accurate determination of the phase anisotropy field. Alloying was found to increase the anisotropy field from 45 kOe in the Mn 50 Bi 50 alloy to 65 kOe in the Mn 50 Bi 45 Mg 3 In 0.5 Sb 1.5 alloy. In the compacted melt-spun alloys subjected to field annealing, a higher degree of texture could be achieved after compaction which had involved less heating, when a smaller fraction of the metastable β' phase had been converted into the α phase; compaction at room temperature allowed for the highest degree of texture in the Mn 50 Bi 45 Mg 3 In 0.5 Sb 1.5 magnet. The addition of indium was found to decrease the solidus temperatures of the alloys, facilitating the development of the α phase during the field annealing and modifying the properties of the resulting magnets. Introduction of indium resulted in a higher coercivity H c of the Mn–Bi–Mg–In magnets and in a better texture of the Mn–Bi–Mg–Sn–In magnets. The former effect allowed, in particular, for a viable maximum energy product ( BH ) max of 10 MGOe to be developed in the Mn 50 Bi 46.5 Mg 3 In 0.5 magnet through annealing in a relatively low field of 15 kOe, whereas the latter effect allowed for an excellent combination of ( BH ) max = 11.6 MGOe and H c = 8.5 kOe in the Mn 50 Bi 45 Mg 3 In 0.5 Sb 1.5 magnet. The highest ( BH ) max of 12 MGOe was realized in the Mn 50 Bi 46 Mg 3 In 0.5 Sb 0.5 magnet.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Selective Conversion of CO 2 to Methanol on a In 2 O 3– x –TiO 2 (110) Interface: Importance of Oxide–Oxide Interactions

Methanol is a strategic energy vector for the storage and delivery of energy and is a widely used precursor for the synthesis of many high-value chemicals. The hydrogenation of carbon dioxide (CO 2 ) into methanol is a key process in industrial operations. Here, in this study, we show that an oxide-oxide interface generated by a low loading (0.15 ML) of In 2 O 3-x on a TiO 2 (110) substrate has a high activity and selectivity as a catalyst for the CO 2 + 3H 2 → CH 3 OH + H 2 O process. The properties of the In 2 O 3-x -TiO 2 interface under reaction conditions were investigated using a combination of synchrotron-based ambient pressure X-ray photoelectron spectroscopy (AP-XPS), temperature programmed desorption (TPD), and catalytic testing. The In 2 O 3-x overlayer spread out on top of the titania and was rich in defects and O vacancies that activated CO 2 and H 2 as reactants, without destroying CH 3 O and CH 3 OH as reaction products. The In 2 O 3-x /TiO 2 (110) catalyst is at least one order of magnitude more active than bulk indium oxide while maintaining a very high selectivity (~80%) towards methanol production. Under the rich hydrogen environment of methanol synthesis, the oxide-oxide interactions allowed only a partial reduction of the In cations, preventing the formation of metal alloys as seen in the case of catalysts with metal-indium oxide interfaces. Thus, the dispersion of low loadings of In 2 O 3-x on a stable oxide substrate is a valid and low-cost approach for generating efficient catalysts for CO 2 valorization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Growth Phenomena and Bandgap Shift in Melt-Grown β-(In x Ga 1- x ) 2 O 3 Alloys

β-Ga 2 O 3 is an emerging ultra-wide bandgap semiconductor with great promise for power electronics and optoelectronics. Alloys in the In 2 O 3 -Ga 2 O 3 system are interesting for optoelectronic applications, particularly where bandgap tuning is desirable. Herein, β-(In x Ga 1- x ) 2 O 3 alloys with target compositions x = 0.025 or 0.10 are grown from the melt using the Czochralski and vertical gradient freeze techniques. Growth with 10 mol% In yields only small, needle-like crystals, while 2.5 mol% In allows growth of centimeter-sized single crystals. A substantial degree of indium segregation is unveiled by spatial measurements of lattice parameters and the bandgap. The bandgap decreases by a maximum of 0.28 eV in the case of the highest In content crystals. Z-contrast transmission electron microscopy confirms a solely octahedral coordination of In in the β-Ga 2 O 3 lattice. With indium concentrations higher than 2.5 mol%, samples contain micron-scale voids that impart a dark coloration. All measured crystals are electrically conductive, with carrier concentrations varying 10 16 –10 17 cm -3 depending upon the location of the sample in the growth. Lastly, a unique luminescence with unknown origin centered around 2.0 eV is revealed by photoluminescence spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Low Melting Temperature Gallium–Indium Liquid Metal Anode for Solid-State Li-Ion Batteries

Solid-state Li-ion batteries are attracting attention for their enhanced safety features, higher energy density, and broader operational temperature range compared to systems based on liquid electrolytes. However, current solid-state Li-ion batteries face performance challenges, such as suboptimal cycling and poor rate capabilities, often due to inadequate interfacial contact between the solid electrolyte and electrodes. To address this issue, we incorporated a gallium–indium (Ga–In) liquid metal as the anode in a solid-state Li-ion battery setup, employing Li 6 PS 5 Cl as the solid electrolyte. Operating at room temperature, this configuration achieved an initial capacity of 389 mAh g –1 and maintained 88% of this capacity after 30 cycles at a 0.05 C rate. It also demonstrated a capacity retention of 66% after 500 cycles at a 0.5 C rate. In comparison to solid anode materials, such as tin, the Ga–In liquid metal exhibited superior cycling stability and rate capacity, which is due to the self-healing and fluid properties of the alloy that ensure stable interfacial contact with solid electrolytes. In situ X-ray diffraction (XRD) and ex situ scanning electron microscope (SEM) analyses revealed that indium does not directly participate in the lithiation/delithiation process. Instead, it helps maintain the alloy’s low melting point, facilitating its return to a liquid state after delithiation. In a comparative analysis of stack pressure during cycling in cells utilizing Ga–In liquid metal and tin, the Ga–In liquid metal cell demonstrated an ability to buffer pressure increases associated with deformation. In conclusion, these findings suggest a promising approach for enhancing solid-state batteries by integrating liquid metal anodes, which improve interfacial contact and stability.

Alloys↗
DOE OSTI2025

The influence of V-defects, leakage, and random alloy fluctuations on the carrier transport in red InGaN MQW LEDs

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the Indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage (V<ℏω/e=2.0 V) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Advances in Molecular Beam Epitaxy Growth of Ultra-Wide Bandgap Ga2O3 Based Alloys

Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap semiconductor material that has attracted attention for its potential to outperform existing SiC and GaN based devices operating at high breakdown voltages and high temperature. Isovalent alloying of In and Al in Ga2O3 provides the ability to engineer bandgap energy and strain of the material. Alloying with Al increases the bandgap energy and the theoretically achievable Baliga's figure of merit, a key measure of a material's ultimate performance limits for high power switching devices. Alloying with In introduces compressive strain and can be used to counteract the tensile strain of Al incorporation. The resulting (AlxGa1-x-yIny)2O3 alloy can be lattice-matched to commercially available Ga2O3 wafers and has a tunable bandgap energy greater than that of Ga2O3, 4.76 eV. Such lattice-matched material can be grown arbitrarily thick without the detrimental effects of elastic strain and relaxation, making it suitable for high voltage diodes and transistors. However, efforts to synthesize isovalent alloys are complicated by their tendency to phase separate into corundum Al2O3 or bixbyite In2O3. Literature reports of the quaternary (AlxGa1-x-yIny)2O3 are limited to <1% unintentional indium incorporation in In-catalyzed (AlxGa1-x)2O3. The primary limitation to quaternary growth is the limited incorporation of indium at elevated growth temperatures. This limited incorporation is due to both the volatility of indium oxide and Al and Ga cation exchange reactions which replace indium in In2O3. We report on the development of a novel high-throughput molecular beam epitaxy (MBE) technique to screen the growth conditions for the ternary alloy (InyGa1-y)2O3, and the application of these findings to the first successful synthesis of phase pure monoclinic (AlxGa1-x-yIny)2O3 by MBE. By leveraging the unique sub-oxide chemistry of Ga2O3 and in-situ monitoring of crystal properties by reflection high-energy electron diffraction (RHEED), a cyclical growth and etch-back method is developed and applied to rapidly characterize the (InyGa1-y)2O3 growth space. This cyclical method provides approximately 10x increase in experimental throughput and up to 46x improvement in Ga2O3 substrate utilization. Appropriate growth conditions for monoclinic (InyGa1- y)2O3 are identified by machine learning analysis of RHEED patterns and targeted growths are characterized ex-situ to confirm improved In incorporation. These growth conditions are then combined with established (AlxGa1-x)2O3 growth conditions to grow quaternary (AlxGa1-x-yIny)2O3 with Al mole fractions ranging from 1.4% - 24.4% and In mole fractions ranging from 3.1% to 15.5%. The chemical and optical properties of the alloys are investigated by XRD, XPS, and spectroscopic ellipsometry. A lattice-matched (AlxGa1-x-yIny)2O3 alloy is examined by 4D-STEM and the chemical and physical uniformity of Al and In incorporation are discussed.

alloy↗
DOE OSTI2022

Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds

Near-band-gap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. Here, the photoemission quantum yield of the InGaN samples with more than 5% of indium drops by more than 1 order of magnitude when the temperature is decreased while it remains constant for lower indium content. This drop is attributed to a freezing of photoelectron transport in p-InGaN due to electron localization in the fluctuating potential induced by the alloy disorder. This interpretation is supported by the disappearance at low temperature of the peak in the photoemission spectrum that corresponds to the contribution of the photoelectrons relaxed at the bottom of the InGaN conduction band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Unexpected origin of the quantum efficiency reduction in long-wavelength (In,Ga)⁢N light-emitting diodes

Differential carrier lifetime (DCL) measurements were performed on c-plane In 𝑥 ⁢Ga 1−𝑥⁢ N/Ga⁢N single-quantum-well (QW) light-emitting diodes (LEDs) with varying indium-content QWs (x = 13.5%, 16%, 22%), emitting with violet, blue, and green wavelengths. The recombination lifetimes of LEDs were found to increase with increasing indium composition, resulting in increased carrier densities n measured by DCL. Extraction of the A coefficients, which are assumed to not vary with n, and of the effective B(n) and C(n) coefficients of the ABC model of the internal quantum efficiency (IQE) of QWs showed no significant changes in the A coefficient with increasing indium content [In] in the In 𝑥 ⁢Ga 1−𝑥 ⁢N QW, and a reduction in the B(n) and C(n) coefficients with increasing [In]. When looking at the Shockley-Read-Hall (SRH) recombination rate An, the radiative recombination rate B(n)𝑛 2 , and the Auger-Meitner (AM) recombination rate C(n)𝑛 3 , we observed that at any given n, the SRH rate is the same for the three [In] measured, while the radiative rate decreases (by up to approximately 9 times) and the AM rate decreases (by up to approximately 7 times) with increasing indium content. This shows that the larger reduction in radiative recombination rates relative to nonradiative recombination rates with increasing [In] is the largest contributor to the decreased quantum efficiencies of LEDs (the “green gap”) at any given n. While some of the reduction in the effective recombination coefficients B(n) and C(n) can be explained by the reduced wave-function overlaps of the QW with increasing indium content, the larger reduction of B(n) relative to C(n) motivates further study of the intrinsic recombination coefficients 𝐵 0 and 𝐶 0 of bulk In 𝑥 ⁢Ga 1−𝑥 ⁢N alloys and how they are related to the effective recombination coefficients B(n) and C(n) in QWs. The relative contributions of nonradiative recombination are enhanced at any given current density due to the sublinear relationship between the carrier density n and the current density. Thus, the solution to the green gap, up to any intrinsic limitations set by the indium content of the QW, from an IQE perspective, requires the design of long-wavelength (In,Ga)⁢N LEDs with improved wave-function overlaps that can operate with a lower carrier density at any given current density.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗