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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Retina-inspired narrowband perovskite sensor array for panchromatic imaging

The retina is the essential part of the human visual system that receives light, converts it to neural signal, and transmits to brain for visual recognition. The red, green, and blue (R/G/B) cone retina cells are natural narrowband photodetectors (PDs) sensitive to R/G/B lights. Connecting with these cone cells, a multilayer neuro-network in the retina provides neuromorphic preprocessing before transmitting to brain. Inspired by this sophistication, we develop the narrowband (NB) imaging sensor combining R/G/B perovskite NB sensor array (mimicking the R/G/B photoreceptors) with a neuromorphic algorithm (mimicking the intermediate neural network) for high-fidelity panchromatic imaging. Compared to commercial sensors, we use perovskite “intrinsic” NB PD to exempt the complex optical filter array. In addition, we use an asymmetric device configuration to collect photocurrent without external bias, enabling a power-free photodetection feature. These results display a promising design for efficient and intelligent panchromatic imaging.

42 ENGINEERING↗
DOE OSTI2024

Developing a robust sensor for infrared imaging bolometers

A new type of large area sensor for infrared imaging bolometers has been developed. It replaces the thin and fragile free-standing metal foils, which typically have been used, with a multi-layer coated sapphire (or diamond) substrate. Sapphire is transparent to mid-infrared wavelengths, is robust against transients, and can be thick enough to even be the vacuum window. The primary radiation absorber is still a thin deposited metal layer, but now it is partially insulated from the supporting sapphire substrate by a black (carbon-based) layer, which also acts as a blackbody remitter. Test results indicate 6× more noise equivalent power density (estimated NEPD = 23 W/m 2 at 5 ms camera exposure time, foil temperature decay time 60 ms) for a 2 μm gold-coated sapphire disk compared to estimated NEP = 4 W/m 2 at 1.8 ms exposure time, with foil decay time 420 ms, for a nominal 2.5 μm thick platinum-free-standing foil.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Development of selenium imaging detectors toward a definitive search for neutrinoless ββ decay

Imaging sensors made from an ionization target layer of amorphous selenium (aSe) coupled to a silicon complementary metal-oxide-semiconductor (CMOS) active pixel array for charge readout are a promising technology for neutrino physics. The high spatial resolution in a solid-state target provides unparalleled rejection of backgrounds from natural radioactivity in the search for the neutrinoless ββ decay of 82 Se. With this grant, we experimentally determined two crucial factors necessary for the realization of this novel technology: i) the intrinsic energy response of aSe to ionizing electrons, and ii) the feasibility to couple a target layer of aSe to a CMOS active pixel sensor to image electron tracks.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Differential holography

Differential Holography technology measures the amplitude and/or phase of, e.g., an incident linearly polarized spatially coherent quasi-monochromatic optical field by optically computing the first derivative of the field and linearly mapping it to an irradiance signal detectable by an image sensor. This information recorded on the image sensor is then recovered by a simple algorithm. In some embodiments, an input field is split into two or more beams to independently compute the horizontal and vertical derivatives (using amplitude gradient filters in orthogonal orientations) for detection on one image sensor in separate regions of interest (ROIs) or on multiple image sensors. A third unfiltered beam recorded in a third ROI directly measures amplitude variations in the input field to numerically remove its contribution as noise before recovering the original wavefront using a numerical in algorithm. When combined, the measured amplitude and phase constitute a holographic recording of the incident optical field.

Ravizza, Frank↗
DOE OSTI2022

Spiking retina microscope

A spiking retina microscope comprising microscope optics and a neuromorphic imaging sensor. The microscope optics are configured to direct a magnified image of a specimen onto the neuromorphic imaging sensor. The neuromorphic imaging sensor comprises a plurality of sensor elements that are configured to generate spike signals in response to integrated light from the magnified image reaching a threshold. The spike signals may be processed by a processor unit to generate a result, such as tracking biological particles in a specimen comprising biological material.

Severa, William Mark↗
DOE OSTI2023

Multichannel angular spectrometer

A multichannel angular spectrometer includes an array of fiber pickups having an arcuate arrangement and focused about a sample volume. A broadband light source is configured to illuminate a sample within the sample volume. At least one dispersion element is in optical communication with the array of fiber pickups. An imaging sensor is in optical communication with the array of fiber pickups. The imaging sensor is configured to image the broadband light received by the array of fiber pickups and dispersed by the at least one dispersion element. A processor is in electrical communication with the imaging sensor. The processor has a power supply and computer-readable memory.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Development of quantum dot materials for infrared cameras (Final CRADA Report)

The aim of this project was to develop scalable methods to produce infrared (IR) mercury telluride (HgTe) colloidal quantum dot (CQD) thin films and demonstrate their utility in a proof-of-concept monolithic SWIR focal plane array (FPA). These objectives were accomplished by scaling up the HgTe CQD synthesis, characterizing physical and electrical properties of HgTe CQDs, evaluating solution-processed coating methods for quality and efficiency, and developing a process flow to integrate HgTe CQDs with commercial-off-the-shelf silicon CMOS readout circuits by solution-processed coating to produce monolithic FPAs. The FPA is the image sensor in an infrared imaging system responsible for detecting and processing reflected or emitted light into an infrared image of the scene under observation. The quality of the image is determined by the sensitivity and resolution of the image sensor in the system. Higher resolution IR FPAs enable higher throughput in manufacturing quality assurance, wider field of view for autonomous navigation, and longer range surveillance for defense.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Systems and methods for verification and authentication of remote sensing imagery

A system for generating and authenticating remote sensing imagery includes a remote sensing platform. The remote sensing platform includes an imaging sensor and a hardware logic device that is directly coupled to the imaging sensor. The hardware logic device receives image data from the imaging sensor and generates a cryptographic signature based upon the image data. The hardware logic device outputs a signed image that includes the image data and the cryptographic signature. A computing device operated by a downstream user receives the signed image and can determine whether the image data has been modified from its original content based upon the cryptographic signature.

Crosby, Sean Michael↗
DOE OSTI2022

Broad-area laser awareness sensor

A laser-strike detection system includes an imaging sensor mounted on a platform, and a computing device. The imaging sensor outputs image frames that are each representative of a portion of the platform at a different time, during which a laser may be striking the platform. The computing device receives the image frames, and computes a delay map that indicates time-of-arrival delays of the laser beam at points on the portion of the platform. The computing device converts the delay map to a path-length variation map by multiplying the delay map by the propagation speed of light. The computing device fits a plane to the path-length variation map constrained by a topological model of the platform. The computing device computes angular deflections in x- and y-directions based upon the fit, which angular deflections define a direction from the platform to an emitter of the laser beam.

Sandusky, John↗
DOE OSTI2022

Lens-free compound eye cameras based on angle-sensitive meta-surfaces

A lens-free ultrathin imaging sensor using a compound-eye vision modality can be formed by forming a metasurface on each pixel of an array of pixels in a solid state imaging sensor. The metasurface can be configured to form a diffraction grating that directs light incident on the metasurface at a predefined angle to excite surface plasmon polaritons into the solid state imaging sensor and light incident at any other angle is reflected or diffracted away from the metasurface. Each pixel of the imaging sensor can be configured using the metasurface to only receive light incident from a different portion of a field of view. A computational imaging system can be used to construct the image from the individual pixels.

Paiella, Roberto↗
DOE OSTI2025

Time-resolved detectors for quantum ghost imaging

Quantum ghost imaging is a method that utilizes the correlated detection of two photons to generate an image. One photon is detected by an imaging sensor and the other by a single-element bucket detector. The selection of the imaging sensor and its capabilities relative to the bucket detector impact the quality of the ghost images. This work examines a SPAD array and a photocathode detector as imaging sensors for quantum ghost imaging. We discuss how to achieve optimal images using these two technologies. We also demonstrate that these devices are able to generate ghost images at 1Hz frame rates, expanding the technique to biologically relevant time scales.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Billion-pixel x-ray camera (BiPC-X)

The continuing improvement in quantum efficiency (above 90% for single visible photons), reduction in noise (below 1 electron per pixel), and shrink in pixel pitch (less than 1 μm) enable billion-pixel x-ray cameras (BiPC-X) based on commercial complementary metal–oxide–semiconductor (CMOS) imaging sensors. We describe BiPC-X designs and prototype construction based on flexible tiling of commercial CMOS imaging sensors with millions of pixels. Device models are given for direct detection of low energy x rays (<10 keV) and indirect detection of higher energies using scintillators. Modified Birks’s law is proposed for light yield non-proportionality in scintillators as a function of x-ray energy. Single x-ray sensitivity and spatial resolution have been validated experimentally using a laboratory x-ray source and the Argonne Advanced Photon Source. Possible applications include wide field-of-view or large x-ray aperture measurements in high-temperature plasmas, the state-of-the-art synchrotron, x-ray free electron laser, and pulsed power facilities.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Evaluation of Neutron-Radiation Tolerance of Lithium Indium Diselenide Semiconductors

Herein we discuss lithium indium diselenide (LISe) as a semiconductor that holds promise for neutron imaging sensor technologies because of its high neutron absorption efficiency and its corresponding ability to discriminate between gamma rays and neutrons. However, being a semiconductor, LISe may not be sufficiently radiation hard for practical application in radiation hard environments. Therefore, a systematic evaluation of the changes in material and electronic properties of LISe after high neutron fluence exposures is investigated. Herein, the characterization methods are utilized which included UV–vis, X-ray diffraction, radioluminescence, Raman, fourier transform infrared spectroscopy (FTIR), current–voltage, and neutron sensing. Characteristics of LISe material that appeared in the literature are identified herein along with several that are expected to appear based on theoretical analyses. The results obtained show clear changes in the material properties of LISe after neutron exposure up to a fluence of 10 16 n cm -2 . However, LISe is still able to sense neutrons above the background at 10 16 n cm -2 , suggesting that LISe may be suitable for use in neutron imaging sensors at neutron imaging facilities.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Heliostat optical error inspection with polarimetric imaging drone

On a Concentrated Solar Power (CSP) field, optical errors have significant impacts on the collection efficiency of heliostats. Fast, cost-effective, labor-efficient, and non-intrusive autonomous field inspection remains a challenge. Approaches using imaging drone, i.e., Unmanned Aerial Vehicle (UAV) system integrated with high resolution visible imaging sensors, have been developed to address these challenges; however, these approaches are often limited by insufficient imaging contrast. Here, in this study, we report a polarimetry-based method with a polarization imaging system integrated on UAV to enhance imaging contrast for in-situ detection of heliostat mirrors without interrupting field operation. We developed an optical model for skylight polarization pattern to simulate the polarization images of heliostat mirrors and obtained optimized waypoints for polarimetric imaging drone flight path to capture images with enhanced contrast. The polarimetric imaging-based method improved the success rate of edge detections in scenarios which were challenging for mirror edge detection with conventional imaging sensors. We have performed field tests to achieve significantly enhanced heliostat edge detection success rate and investigate the feasibility of integrating polarimetric imaging method with existing imaging-based heliostat inspection methods, i.e., Polarimetric Imaging Heliostat Inspection Method (PIHIM). Our preliminary field test results suggest that the PIHIM hold the promise to enable sufficient imaging contrast for real-time autonomous imaging and detection of heliostat field, thus suitable for non-interruptive fast CSP field inspection during its operation.

CSP Field↗
DOE OSTI2024

A Cryogenic readout integrated circuit with analog pile-up and in-Pixel ADC for high frame rate Skipper CCD-in-CMOS Sensors

The Skipper CCD-in-CMOS Parallel Read-Out Circuit V2 (SPROCKET2) is designed to enable high frame rate readout of Skipper CCD-in-CMOS image sensors. The SPROCKET2 pixel is fabricated in a 65 nm CMOS process and occupies a 60$\mu$m $\times$ 60$\mu$m footprint. SPROCKET2 is intended to be heterogeneously integrated with a pixelated Skipper CCD-in-CMOS sensor, such that one readout pixel is connected to a multiplexed array of 16 active image sensor pixels, to match their spatial geometry. Our design benefits from the Skipper CCD-in-CMOS sensor's non-destructive readout capability to achieve exceptionally low noise through multi-sampling and averaging while optimizing for total power consumption. The pixel readout utilizes correlated double sampling to minimize 1/f noise and includes "pile-up" of ten successive samples in the analog domain before digitizing at a rate of 66.7 ksps. Measurement results of in-pixel serial SAR ADC show DNL and INL of ~0. 44 LSB and 0.58 LBS respectively. A large area array of 20,000 SPROCKET2 ADC pixels (multiplexed 1:16 to 320,000 sensor pixels) is currently under test. By reading out data over a 10 Gbps optical link, this pixel design enables a frame rate of $\sim$ 4 kfps for large sensing areas with minimal sensing deadtime. In the highest gain mode, the pixelated ADC has an input-referred resolution of 10$\mu$V with a simulated power consumption of 50$\mu$W. The pixel operates with constant current draw to minimize power-rail crosstalk.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Perspectives of active Si photonics devices for data communication and optical sensing

Si photonics has made rapid progress in research and commercialization in the past two decades. While it started with electronic–photonic integration on Si to overcome the interconnect bottleneck in data communications, Si photonics has now greatly expanded into optical sensing, light detection and ranging (LiDAR), optical computing, and microwave/RF photonics applications. From an applied physics point of view, this perspective discusses novel materials and integration schemes of active Si photonics devices for a broad range of applications in data communications, spectrally extended complementary metal–oxide–semiconductor (CMOS) image sensing, as well as 3D imaging for LiDAR systems. We also present a brief outlook of future synergy between Si photonic integrated circuits and Si CMOS image sensors toward ultrahigh capacity optical I/O, ultrafast imaging systems, and ultrahigh sensitivity lab-on-chip molecular biosensing.

electronic band structure↗
DOE OSTI2020

Evaporated Se x Te 1-x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors

Semiconducting absorbers in high-performance short-wave infrared (SWIR) photodetectors and imaging sensor arrays are dominated by single-crystalline germanium and III-V semiconductors. However, these materials require complex growth and device fabrication procedures. In this work, thermally evaporated Se x Te 1- x alloy thin films with tunable bandgaps for the fabrication of high-performance SWIR photodetectors are reported. From absorption measurements, it is shown that the bandgaps of Se x Te 1- x films can be tuned continuously from 0.31 eV (Te) to 1.87 eV (Se). Owing to their tunable bandgaps, the peak responsivity position and photoresponse edge of Se x Te 1- x film-based photoconductors can be tuned in the SWIR regime. By using an optical cavity substrate consisting of Au/Al 2 O 3 to enhance its absorption near the bandgap edge, the Se 0.32 Te 0.68 film (an optical bandgap of ≈0.8 eV)-based photoconductor exhibits a cut-off wavelength at ≈1.7 μm and gives a responsivity of 1.5 AW -1 and implied detectivity of 6.5 × 10 10 cm Hz 1/2 W -1 at 1.55 μm at room temperature. Importantly, the nature of the thermal evaporation process enables the fabrication of Se 0.32 Te 0.68 -based 42 × 42 focal plane arrays with good pixel uniformity, demonstrating the potential of this unique material system used for infrared imaging sensor systems.

36 MATERIALS SCIENCE↗