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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Decay spectroscopy at the two-proton drip line: Radioactivity of the new nuclides 160 Os and 156 W

The radioactivity of $^{160}_{76}$Os 84 and $^{156}_{74}$W 82 that lie at the two-proton drip line has been measured in an experiment performed at the Accelerator Laboratory of the University of Jyväskylä. The 160 Os nuclei were produced using fusion-evaporation reactions induced by a beam of 310 MeV 58 Ni ions bombarding a 106 Cd target. The 160 Os ions were separated in flight using the recoil separator MARA and implanted into a double-sided silicon strip detector, which was used to measure their decays. The α decays of the ground state of 160 Os (Ε α = 7092(15) keV, t 1/2 = 97$^{+97}_{-32}$ μs) and its isomeric state (Ε α = 8890(10) keV, t 1/2 = 41$^{+15}_{-9}$ μs) were measured, allowing the excitation energy of the isomer to be determined as 1844(18) keV. These α-decay properties and the excitation energy of the isomer are compared with systematics. The α decays were correlated with subsequent decays to investigate the β decays of the ground state of 156 W, revealing that unlike its isotones, both low-lying isomers were populated in its daughter nuclide, 156 Ta. An improved value for the half-life of the proton-decaying high-spin isomeric state in $^{156}_{73}$Ta 83 of 333$^{+25}_{-22}$ ms was obtained in a separate experiment using the same experimental systems with a 102 Pd target. This result was employed to improve the precision of the half-life determined for 156 W, which was measured as 157$^{+57}_{-34}$ ms.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Nuclear rotation at the fission limit in Rf 254

A ground-state rotational band in the fissile nucleus Rf254 was observed for the first time. Levels up to spin 14 and excitation energy of 1.56 MeV were observed. The Rf254 nuclei were produced using the Pb206(Ti50,2n) fusion-evaporation reaction. It is the weakest reaction channel ever studied using in-beam γ-ray spectroscopic methods. The reaction products were separated from the beam in the Argonne gas-filled analyzer (AGFA). The Rf254 nuclei were implanted into a double-sided Si strip detector at the AGFA focal plane and tagged with subsequent ground-state spontaneous fission decays using temporal and spatial correlations. Prompt γ rays in coincidence with the Rf254 recoils were detected in the Gammasphere array of Ge detectors. In order to identify the ground-state rotational band in Rf254, a method for identifying rotational bands in low statistics γ-ray spectra was developed. The deduced Rf254 kinematic moment of inertia is smaller compared to neighboring even-even nuclei. This is most likely associated with a slightly lower quadrupole deformation and stronger pairing correlations in Rf254. The behavior of the moment of inertia as a function of rotational frequency is similar to that of the lighter N=150 isotones Fm250 and No252.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Toward the Discovery of New Elements: Production of Livermorium (𝑍 = 116) with 50 Ti

The 244 Pu ⁢(50 Ti ,𝑥⁢𝑛)⁢ 294−𝑥 Lv reaction was investigated at Lawrence Berkeley National Laboratory’s 88-Inch Cyclotron. The experiment was aimed at the production of a superheavy element with 𝑍 ≥114 by irradiating an actinide target with a beam heavier than 48 Ca. Produced Lv ions were separated from the unwanted beam and nuclear reaction products using the Berkeley Gas-filled Separator and implanted into a newly commissioned focal-plane detector system. Two decay chains were observed and assigned to the decay of 290 Lv . The production cross section was measured to be 𝜎 prod = 0.44($^{+0.58}_{−0.28}$) pb at a center-of-target center-of-mass energy of 220(3) MeV. Furthermore, this represents the first published measurement of the production of a superheavy element near the “island of stability,” with a beam of 50 Ti and is an essential precursor in the pursuit of searching for new elements beyond 𝑍 =118.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Exploration of methods to remove implanted 210 Pb and 210 Po contamination from silicon surfaces

Radioactive contaminants on the surfaces of detector components can be a problematic source of background events for physics experiments searching for rare processes. Exposure to radon is a specific concern because it can result in the relatively long-lived 210 Pb (and progeny) being implanted to significant subsurface depths such that removal is challenging. Here, in this article, we present results from a broad exploration of cleaning treatments to remove implanted 210 Pb and 210 Po contamination from silicon, which is a material frequently used in rare-events searches. We demonstrate for the first time that heat treatments (“baking”) can effectively mitigate such surface contamination, with a 1200 °C bake resulting in a 97$^{+2}_{-3}$% reduction. We also report results using wet-chemistry and plasma-based methods, which show that etching can be highly effective provided the etch depth is sufficiently aggressive. Our survey of cleaning methods suggests consideration of multiple approaches during the different phases of detector construction to enable greater flexibility for efficient removal of 210 Pb and 210 Po surface contamination.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Toward ultrafast, ultra-stable imaging arrays: Superlattice doping to enhance the performance of backside-illuminated 3D-hybridized silicon photodetectors

In this paper, the authors report the latest results on their development of superlattice-doped, thinned, backside-illuminated (BSI), 3D-integrated photodiode detectors—a step toward their ultimate goal of demonstrating ultrafast, ultrastable CMOS imaging arrays. As with most silicon-based photodetectors, backside-illumination and backside surface passivation are keys to achieve the highest performance capability. The two-dimensional (2D) doping technique developed at the Jet Propulsion Laboratory (JPL) has proved to result in a highly efficient, highly stable detector response when combined with a variety of detectors. Here, JPL's 2D-doping has been combined with Sandia's BSI photodetectors hybridized with custom fanout wafer via copper Direct Bond Interconnect (DBI®), a technology that is rapidly becoming industry standard for BSI CMOS imaging arrays. The prototype detectors were packaged and evaluated with respect to their response to low energy electrons. The authors find that the responsivity of 2D-doped BSI detectors is higher than devices prepared using other surface passivation techniques (i.e., ion implantation). The success of the work described herein verifies that the 2D-doping processes previously developed for Sandia's frontside-illuminated photodetectors are generally applicable to BSI detectors and demonstrates for the first time that JPL's 2D-doping process is compatible with the Cu-DBI® technology.

Jewell, April D.↗
DOE OSTI2024

Spontaneous fission of the odd- Z isotope 255 Db

Experiments conducted at Lawrence Berkeley National Laboratory's 88-Inch Cyclotron Facility aimed to produce and study the decay of the previously unobserved isotope 255 Db. This isotope was produced in the 206 Pb( 51 V, 2⁢n) 255 Db reaction, separated from unreacted beam material and reaction by-products with the Berkeley Gas-filled Separator, and then implanted into a double-sided silicon-strip detector at the BGS focal plane. Decay properties of 255 Db were determined from the analysis of evaporation residue (EVR) fission and EVR-α–α correlations. The properties of this new isotope of dubnium differ dramatically from those of its neighboring Db isotopes. 255 Db was found to decay primarily by spontaneous fission (SF) with a small α-decay branch, where the average half-life of the observed decays was t 1/2 = 2.6$^{+0.4}_{– 0.3}$ ms. Theoretical calculations were performed using the Wentzel-Kramers-Brillouin approximation, with parameters calculated within a self-consistent microscopic approach, to see if these unique properties could be reproduced. A SF half-life estimate is obtained that closely matches the measured value, while simultaneously pointing out the sensitivities that need to be further constrained in future work.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Combined analysis of HPK 3.1 LGADs using a proton beam, beta source, and probe station towards establishing high volume quality control

The upgrades of the CMS and ATLAS experiments for the high luminosity phase of the Large Hadron Collider will employ precision timing detectors based on Low Gain Avalanche Detectors (LGADs). We present a suite of results combining measurements from the Fermilab Test Beam Facility, a beta source telescope, and a probe station, allowing full characterization of the HPK type 3.1 production of LGAD prototypes developed for these detectors. We demonstrate that the LGAD response to high energy test beam particles is accurately reproduced with a beta source. Finally, we further establish that probe station measurements of the gain implant accurately predict the particle response and operating parameters of each sensor, and conclude that the uniformity of the gain implant in this production is sufficient to produce full-sized sensors for the ATLAS and CMS timing detectors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Layout and performance of HPK prototype LGAD sensors for the High-Granularity Timing Detector

The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology, will cover the pseudo-rapidity region of 2.4 < |n| < 4.0 with two end caps on each side and a total area of 6.4 m 2 . The timing performance can be improved by implanting an internal gain layer that can produce signals with a fast rising edge. It significantly improves the signal-to-noise ratio. The required average timing resolution per track for a minimum ionizing particle is 30 ps at the start and 50 ps at the end of the HL-LHC operation. This is achieved with several layers of LGAD. The innermost region of the detector would accumulate a 1MeV neutron-equivalent fluence up to 2.5 10 15 n eq /cm 2 including a safety factor of 1.5 before being replaced during the scheduled shutdowns. The addition of this new detector is expected to play an important role in the mitigation of high pile-ups at the HL-LHC. The layout and performance of the various versions of LGAD prototypes produced by Hamamatsu (HPK) have been studied by the ATLAS Collaboration. The breakdown voltages, depletion voltages, inter-pad gaps, collected charge as well as the time resolution have been measured and the production yield of large size sensors has been evaluated.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Modeling of surface-state induced inter-electrode isolation of n -on- p devices in mixed-field and γ -irradiation environments

Position sensitive n-on-p silicon sensors will be utilized in the tracker and in the High Granularity Calorimeter (HGCAL) of the Compact Muon Solenoid (CMS) experiment at High Luminosity Large Hadron Collider (HL-LHC). The detrimental effect of the radiation-induced accumulation of positive net oxide charge on position resolution in n-on-p sensors has typically been countered by the application of isolation implants like p-stop or p-spray between n + -electrodes. In addition to the positively charged layer inside the oxide and close to the Si/SiO 2 -interface, surface damage introduced by ionizing radiation in SiO 2 -passivated silicon particle detectors includes the accumulation of trapped-oxide-charge and interface traps. A previous study of either n/γ (mixed field)- or γ-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed evidence of substantially higher introduction rates of acceptor- and donor-type deep interface traps (N it,acc/don ) in mixed-field environment. Here, in this work, an inter-pad and -strip resistance (or resistivity (ρ int )) simulation study of n-on-p sensors with and without p-stop isolation implants was conducted for both irradiation types. Higher levels of ρint showed correlation to higher densities of deep N it,acc/don , with the inter-pad isolation performance of the mixed-field irradiated sensors becoming independent of the presence of p-stop implant between the n + - electrodes up to about 100 kGy. The low introduction rates of deep N it,acc/don in γ-irradiated sensors resulted in high sensitivity of ρ int to the presence and peak doping of p-stop above the lowest dose of about 7 kGy in the study. As a consequence of the advantageous influence of radiation-induced accumulation of deep N it on the inter-electrode isolation, position sensitive n-on-p sensors without isolation implants may be considered for future HEP-experiments where the radiation is largely due to hadrons.

Akchurin, N. [Texas Tech Univ., Lubbock, TX (Unite↗
DOE OSTI2021

First Soft X-ray Quantum Efficiency Measurements on Microwave Annealed Thin-Entrance Window Sensors

Free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250eV-1.5KeV. In addition, there are other light sources such as the FERMI, EuXFEL, and FLASH XFELs, as well as numerous synchrotrons such as the ALS, where soft x-ray science would benefit from detectors with higher quantum efficiency in the 20 eV to 1.5KeV range.A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. Previously, SRP and SIMS measurements were used to characterize the shallow dopant profile, and sensors with the new entrance window process were deployed successfully to measure an Fe-55 x-ray spectrum. For the first time, we present quantum efficiency measurement for soft x-rays. Furthermore, the resulting estimate of the entrance window is 20nm for an arsenic implanted entrance window and 55nm for a boron implanted entrance window.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Silicon pinhole strip defects and their impact on ATLAS Inner Tracker HV current measurement

In preparation for the High-Luminsity LHC (HL-LHC) [1], the ATLAS detector will undergo major detector upgrades, including the replacement of the current Inner Detector with the new all-silicon Inner Tracker (ITk) [2]. The ITk consists of a pixel detector close to the beamline surrounded by a large-area strip detector. During detector production, the electrical properties of silicon sensors and readout electronics must be characterized through a series of quality control (QC) and quality assurance tests. These tests ensure any defect is captured at the earliest possible stage. One such defect, callled a pinhole, occurs when the strip implant and the metal readout electrode are shorted through the intermediary dielectric layer. Notably, the introduction of pinholes during module assembly and pinhole effects on completed modules, especially on leakage current measurement circuitry, have never been studied. In this paper, we investigate the effect of such connections on the sensor leakage current measurements of completed modules and introduce new ways to locate pinholed strips. Here, with minor modifications to testing procedures, such defects are shown not to impede module testing or performance.

FOS: Physical sciences↗
DOE OSTI2021

Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data

This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the n+ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the n+ doping profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between 2.5μm for 70–100 pad-pitch geometry and 17μm with 200–500 matrices, a factor of 10 better than what is achievable in binary read-out (bin size/12). Beam test data show a temporal resolution of ~40ps for 200 μm pitch devices, in line with the best performances of LGAD sensors at the same gain.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Design and Performance of an InAs Quantum Dot Scintillator with Integrated Photodetector

A new scintillation material composed of InAs quantum dots (QDs) hosted within a GaAs matrix was developed, and its performance with different types of radiation is evaluated. A methodology for designing an integrated photodetector (PD) with a low defect density and that is optically matched to the QD’s emission spectrum is introduced, utilizing an engineered epitaxial InAlGaAs metamorphic buffer layer. The photoluminescence (PL) collection efficiency of the integrated PD is examined using two-dimensional scanning laser excitation. The detector response to 5.5 MeV α-particles and 122 keV photons is presented. Yields of 13 electrons/keV for α-particles and 30–60 electrons/keV for photons were observed. The energy resolution of 12% observed with α-particles was mainly limited by noise- and geometry-related optical losses. The radiation hardness of an InAs QDs hosted within GaAs and a wider band gap AlGaAs ternary alloy was studied under a 1 MeV proton implantation up to a 10 14 cm –2 dose. The integrated PL responses were compared to evaluate PL quenching due to non-radiative defects. The QDs embedded in the AlGaAs demonstrated improved radiation hardness compared to QDs in the GaAs matrix and in the InGaAs quantum wells.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Determination of γ-ray branching ratios for ⁹⁵Zr and ¹⁴⁷Nd

For many fission products, the γ rays emitted following decay provide an easily-detectable signature that can be used to identify their quantities and distributions in a sample. As a result, γ-ray spectroscopy is often exploited to study fission-product yields (FPYs), provided sufficiently accurate information on the γ-ray branching ratio is available. However, in many cases, the uncertainties in the existing nuclear data are large enough that they compromise the precision achievable for modern experiments and applications. To address this need, we have developed a new experimental method that is well suited to precisely measure the γ-ray branching ratios in the decay of long-lived fission products. The approach involves the production of a radiopure sample by implantation of a mass-separated ion beam from the CAlifornium Rare Isotope Breeder Upgrade (CARIBU) facility on a thin carbon foil. The emitted β -decay radiation is detected with a 4π gas proportional counter and a meticulously efficiency-calibrated high-purity germanium (HPGe) detector. As a first measurement to demonstrate the approach, we studied the γ-ray branching ratios of the strongest transitions following the decay of ⁹⁵Zr and decay-daughter ⁹⁵Nb and determined these branching ratios to fractional precisions of 1%. We then applied this approach to determine the γ-ray branching ratios for the β decay of ¹⁴⁷Nd. The results for the γ-ray branching ratios are presented here and compared to previous results and evaluations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

New approach to precisely measure γ-ray intensities for long-lived fission products, with results for the decay of 95 Zr

For many fission products, the rays emitted following decay provide an easily-detectable signature that can be used to identify their quantities and distributions in a sample. As a result, γ-ray spectroscopy is often exploited to study fission-product yields, provided sufficiently accurate information on the γ-ray intensity is available. However, in many cases, the uncertainties in the existing nuclear data are large enough that they compromise the precision achievable for modern experiments and applications. To address this need, we have developed a new experimental method that is well suited to precisely measure absolute γ-ray intensities in the β decay of long-lived fission products. The approach involves the production of a radiopure sample by implantation of a mass-separated ion beam from the CAlifornium Rare Isotope Breeder Upgrade (CARIBU) facility on a thin carbon foil. The emitted β-decay radiation is detected with a 4π gas proportional counter and a meticulously efficiency-calibrated high-purity germanium (HPGe) detector. As a first measurement to demonstrate the approach, we studied the absolute γ-ray intensities of the strongest transitions following the β decay of 95 Zr and its decay-daughter 95 Nb, and determined them to fractional precisions of better than 1–2%. In addition, with a larger sample of activity produced through neutron irradiation of an isotopically-enriched Zr foil, we performed a high-precision measurement of the relative γ-ray intensities following the decay of 95 Zr with just the HPGe detector. Here, the sample-production method at CARIBU and the coincidence detection approach demonstrated here can be applied to study fission products with half-lives longer than a day, which includes isotopes important not only for nuclear-energy and national-security applications, but also for medical-isotope research and environmental monitoring.

4π↗
DOE OSTI2021

System and method for all optical electrode interface for bioengineering application

The present disclosure relates to an electro-optical modulator system having a source laser which generates an input optical signal. The input optical signal is received by an electro-optical module. The electro-optical module is implantable into an anatomy and includes a plurality of pixels. Each pixel has associated therewith an electrode and an optical modulator subsystem. The electrode receives electrical signals from the anatomy. The optical modulator subsystem receives the input optical signal and modulates the input optical signal to generate modulated optical output signals in relation to the received electrical signals. A detector subsystem may be used to receive and collect the modulated optical output signals.

Patra, Susant K.↗
DOE OSTI2021

Lithium source for focused ion beam implantation and analysis

In this work, we present a new Li source for focused ion beam applications. Based on an AuSi eutectic alloy, Li is added as an impurity to minimize effects from degradation when exposed to air. We show the source is stable over the course of an hour and spot sizes ≲10 nm can be achieved. The Li beam can achieve hundreds of nanometer ranges in semiconductors with minimal damage being generated along the path length. The source performance is evaluated through a high-resolution ion beam induced charge collection experiment on an Si-based detector. Further application of the source for ion beam analysis is numerically explored; the example investigated is based on probing a semiconductor heterostructure through a Rutherford backscattering experiment, where the Li beam can reveal information that is inaccessible with either low energy or high energy He projectiles used as probes.

36 MATERIALS SCIENCE↗