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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Achievement of highly radiating plasma in negative triangularity and effect of reactor-relevant seeded impurities on confinement and transport

The first achievement of highly radiating plasmas in negative triangularity (NT) is shown with an operational space featuring high core radiation at high Greenwald fraction obtained with the injection of reactor-relevant seeded gases. These NT shape diverted discharges reach high values of normalized plasma pressure ( β N > 2) at high radiation fraction with no edge localized modes (ELMs) and a simultaneous reduction of the divertor heat flux. Here, we demonstrate that as long as the impurity level in the core is kept low to avoid excessive fuel dilution and impurity accumulation, integration of NT configuration with high radiation fraction not only is achievable but it can lead to confinement improvement with stabilization effects originating from collisionality, E × B shear and profiles changes due to impurity radiation cooling. The underlying physics mechanism is robust and reproducible and holds for a variety of impurity species. The absence of the requirement to stay in H-mode translates in a higher core radiation fraction potentially allowed in NT shape effectively mitigating the power exhaust issue. The results presented here demonstrate a path to high performance, ELM free and highly radiative regime with reactor-relevant seeding gases making this regime a potential new scenario for reactor design.

confinement improvement↗
DOE OSTI2022

Triggering of tearing instability by impurity radiation through resistive interchange reversal in a tokamak

Abstract Recent MHD simulations find that the reversal of the local resistive interchange parameter D R from negative to positive due to impurity radiation cooling is able to linearly destabilize the resistive tearing mode (TM) growth in a tokamak above a threshold in impurity level. A layer of perturbed Pfirsch–Schlüter current density and resistivity are also induced by the impurity radiation, which further govern the TM growth and saturation in the nonlinear stage. The impurity threshold and the TM growth strongly depend on the parallel thermal conductivity, and such a dependence derives from the impact on D R of the fast parallel thermal equilibration along the helical magnetic field lines.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Glow Discharge Boronization and Real-Time Boronization Using an Impurity Powder Dropper in LHD

In the Large Helical Device (LHD), boronization is utilized for wall conditioning, employing two distinct methods: glow discharge using diborane gas and the injection of boron powder into the plasma via an impurity powder dropper (IPD). Glow discharge boronization is conducted after maintenance when the vacuum vessel is exposed to air and just before the start of an experimental campaign. In contrast, real-time boronization using the IPD is performed during discharges. The distribution of boron on plasma-facing components was assessed through long-term material probes in the case of glow discharge and through numerical simulations for the IPD method. Results indicated non-uniform boron distributions in both cases. The impact of these boronization techniques on impurity levels and the lifetime of their effects were also examined. Both methods effectively reduced oxygen and iron in the plasma, with the iron impurities originating from the first wall. For glow discharge boronization, the reduction in oxygen levels persisted until the end of the experimental campaign, whereas the reduction in iron levels only lasted a few days. In the case of boron injection during long pulse discharges exceeding 200 s, the suppression of oxygen and iron was observed. The effect on iron quickly diminished within several seconds after the injection ended, whereas the effect on oxygen lasted more than 100 s. The difference in the lifetimes of the boronization effects is further discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Crystal-chemical origins of the ultrahigh conductivity of metallic delafossites

Abstract Despite their highly anisotropic complex-oxidic nature, certain delafossite compounds ( e.g ., PdCoO 2 , PtCoO 2 ) are the most conductive oxides known, for reasons that remain poorly understood. Their room-temperature conductivity can exceed that of Au, while their low-temperature electronic mean-free-paths reach an astonishing 20 μm. It is widely accepted that these materials must be ultrapure to achieve this, although the methods for their growth (which produce only small crystals) are not typically capable of such. Here, we report a different approach to PdCoO 2 crystal growth, using chemical vapor transport methods to achieve order-of-magnitude gains in size, the highest structural qualities yet reported, and record residual resistivity ratios ( > 440). Nevertheless, detailed mass spectrometry measurements on these materials reveal that they are not ultrapure in a general sense, typically harboring 100s-of-parts-per-million impurity levels. Through quantitative crystal-chemical analyses, we resolve this apparent dichotomy, showing that the vast majority of impurities are forced to reside in the Co-O octahedral layers, leaving the conductive Pd sheets highly pure (∼1 ppm impurity concentrations). These purities are shown to be in quantitative agreement with measured residual resistivities. We thus conclude that a sublattice purification mechanism is essential to the ultrahigh low-temperature conductivity and mean-free-path of metallic delafossites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Design of a Continuous Electrochemical Purification Reactor for Corrosion Mitigation in Molten Chloride Salt Systems

The utility of molten chloride salts in concentrating solar power (CSP) is dependent on the ability to maintain low corrosive impurities. Without proper purification, the corrosion rates of containment alloys exceed the industry standard of corrosion—under 20 μm/year. An extensive body of literature focuses on the initial purification stage of molten chloride salts. However, occurrences such as maintenance, leaks, and so forth expose the salt to the atmosphere and reintroduce impurities. Therefore, it is critical to develop a purification strategy that can control impurity levels during CSP plant operation. Here we present the design and fabrication of a purification vessel to continuously remove impurities out of flowing molten salt.

Witteman, Liam↗
DOE OSTI2021

Determination of impurities in cubic boron nitride (cBN) by inductively coupled plasma mass spectrometry (ICPMS)

The phase stability of cBN is critically dependent on the content and amount of impurities present. While studies have shown qualitatively that the addition of certain impurities can either increase or decrease the cBN-hBN phase transition temperature, studies have yet to show this effect quantitatively. This is because analytical methods to characterize minor and trace impurities in cBN are currently lacking. To this end, we present flux fusion methods capable of fully digesting cBN samples for ICPMS analyses. The materials used in this study are commercially available cBN powders in three different sizes. Two types of fluxes (LiOH and NaOH·H 2 O) are utilized so that both Li and Na impurities can be determined. To ensure the accuracy of Si measurements, a column chromatography method has been developed to purify Si from flux materials in order to increase the amount of dissolved sample sent to the ICP. Detection limits have been determined using procedural blanks and are found to be below 20 μg/g for all 58 elements analyzed except for Si, for which the detection limit is 312 μg/g. Nonetheless, all cBN powders studied are found to have high Si impurity levels that are above detection limit. This study provides a much-needed analytical protocol to enable comprehensive screening of impurities in cBN.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Purification of Degraded Aqueous Piperazine by Ion Exchange and Carbon Treating

Amine purification by ion exchange and carbon treating has been performed for decades to maintain low solvent impurity levels in amines used in natural gas sweetening. The use of these purification methods to remove dissolved metal catalysts and other impurities from amines used in post-combustion carbon capture is less well known. This report presents batch experiments testing the equilibrium adsorption of impurities from degraded piperazine (PZ) onto activated carbon and various ion exchange resins. Compared to cationic exchange, anionic exchange was found to better remove catalytic Fe and UV active species, making it a better candidate for large-scale PZ purification. Carbon treating greatly outperforms anion exchange in the removal of UV active species, but the adsorbents’ difference is less pronounced for the removal of other impurities. Equilibrium adsorption was determined by the UV absorption of the PZ solution at 320 nm, and the results will show this may not be an accurate way to determine equilibrium. Further bench-scale experiments comparing ion exchange and carbon treating are necessary before advancing to larger-scale testing.

amine purification↗
DOE OSTI2025

Fuel recycling and impurity characteristics in long-pulse H-mode plasmas with full metal and dynamically coated walls on EAST

We report the basic behaviors of fuel recycling and impurity accumulation during >100 s long-pulse H-mode plasma under full metal wall conditions on EAST. Significant fuel recycling and impurity rising, particularly from heavy impurities, have been observed when operating with a bare metal wall or a deteriorate real-time coated wall, which severely limits the duration of H-mode discharges. To address this issue, a novel dynamic wall coating technique combining feedforward and feedback controls has been successfully developed. The feedforward control presets the Li powder injection rate based on prior experimental observations, whereas the feedback control dynamically modulates the Li injection rate in response to real-time Li-II line emission measurements. Using this approach, a 605 s H-mode plasma has been achieved with fuel recycling and impurity level maintained stable. This result extends the previous record of a 403 s long-pulse H-mode plasma Gong et al (2024 Nucl. Fusion 64 112013) by over 200 s. It demonstrates the effectiveness of the dynamic powder injection technique in controlling fuel recycling and impurities accumulation, while prolonging plasma duration. These findings offer valuable insights into potential applications of other low-Z powder, such as boron, in ITER.

fuel recycling↗
DOE OSTI2020

Stabilizing effect of enhanced resistivity on peeling-ballooning instabilities on EAST

Previous stability analysis of NSTX equilibrium with lithium-conditioning demonstrates that enhanced resistivity due to the increased effective charge number Z eff (i.e. increased impurity level) can provide a stabilizing effect on low-n edge localized modes. This paper extends the resistivity stabilizing effect to the intermediate-n peeling-ballooning (PB) instabilities with the linear stability analysis of EAST high-confinement mode equilibria in NIMROD two-fluid calculations. However, in this work, the resistivity stabilizing effect on PB instabilities in the EAST tokamak appears weaker than that found in NSTX. This work may provide better insight into the physical mechanism behind the beneficial effects of impurities on pedestal stability.

EAST tokamak↗
DOE OSTI2024

Growth of High-Purity CsPbBr 3 Crystals for Enhanced Gamma-Ray Detection

High-quality CsPbBr 3 crystals hold significant potential for gamma-ray detection due to their remarkable optoelectronic properties. This study details an optimized production process using the Bridgman method to achieve highly pure CsPbBr 3 crystals. By implementing rigorous synthesis and purification techniques, we successfully reduced the total impurity levels to 9 ppm, as confirmed by glow discharge mass spectroscopy (GDMS). The resulting CsPbBr 3 crystals demonstrate exceptional performance, including high transparency, intense photoemission, and prolonged photoluminescence decay times. These properties facilitate superior gamma-ray detection with an energy resolution of 1.4% for the 137 Cs 662 keV gamma-rays, comparable to commercial Cd 1-x Zn x Te (CZT) detectors. Our findings underscore the critical relationship between material purity and detector performance, highlighting the potential of CsPbBr 3 as a cost-effective alternative in radiation detection applications. Further studies on defect origins and electronic states are necessary to fully leverage the capabilities of CsPbBr 3 crystals in practical high-energy radiation detection systems.

Bridgman↗
DOE OSTI2020

Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide

Abstract Reliable, controlled doping of 2D transition metal dichalcogenides will enable the realization of next‐generation electronic, logic‐memory, and magnetic devices based on these materials. However, to date, accurate control over dopant concentration and scalability of the process remains a challenge. Here, a systematic study of scalable in situ doping of fully coalesced 2D WSe 2 films with Re atoms via metal–organic chemical vapor deposition is reported. Dopant concentrations are uniformly distributed over the substrate surface, with precisely controlled concentrations down to <0.001% Re achieved by tuning the precursor partial pressure. Moreover, the impact of doping on morphological, chemical, optical, and electronic properties of WSe 2 is elucidated with detailed experimental and theoretical examinations, confirming that the substitutional doping of Re at the W site leads to n‐type behavior of WSe 2 . Transport characteristics of fabricated back‐gated field‐effect‐transistors are directly correlated to the dopant concentration, with degrading device performances for doping concentrations exceeding 1% of Re. The study demonstrates a viable approach to introducing true dopant‐level impurities with high precision, which can be scaled up to batch production for applications beyond digital electronics.

Kozhakhmetov, Azimkhan↗
DOE OSTI2024

Influence of Rare Earth Ce Additions on Microstructure and Mechanical Properties of Experimental Pipeline Steels

Herein, the effect of Ce additions ranging from 57 to 263 ppm is evaluated for an experimental pipeline steel. Compared to the Ce-free steel, progressive Ce additions result in a slightly refined microstructure, significantly improve transverse impact properties, and slightly increase strength. All these observations can be attributed to the gradual transformation of Mn sulfide and Mn–Si–Al oxide inclusions to Ce-containing oxide/sulfides. In particular, the inclusions consist exclusively of sub-5 μm spherical Ce 2 O 2 S particles upon near-stoichiometric additions of Ce, considering the oxygen and sulfur impurity level of the steel. In conclusion, the results suggest that Ce is a potentially promising alloying addition for next-generation pipeline steels by replacing overtly deleterious inclusions with potentially beneficial ones.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Radiological analysis and transmutation calculation of representative castable nanostructured alloys

In this work, radiological analysis regarding the waste management was performed on two current reduced-activation ferritic-martensitic (RAFM) steels Eurofer 97 and F82H and two castable nanostructured alloys (CNAs) CNA1 and CNA3 using the European DEMO first wall spectrum. CNA1 and CNA3 are a new generation of RAFM steels, which have increased amounts of nanoscale carbonitrides and carbides precipitates, respectively, via small composition modifications. Furthermore, the increased nitrogen in CNA1 leads to higher activity at ≥50 years, and thus to the disposal concern under the current NRC regulation. However, the calculation using Fetter’s evaluation leads to reduced waste disposal rating (WDR) of down to 0.25 depending on the damage dose from ~0.05 wt percent nitrogen in CNA1, and thus less concern on the waste disposal. Contact dose rate after 10 years from the first wall replacement primarily depends on the initial Co and Nb impurity levels. Other added elements, such as V and Si in CNA1 and Ti and Mn in CNA3, do not have significant effect on the specific activity, contact dose rate, or decay heat. Composition limits of CNAs are given based on the shallow burial disposal and materials recycling. In addition, composition evolution of typical precipitates in the CNAs was calculated using the DEMO first wall and the HFIR spectra. Larger transmutation-induced composition evolution occurs in the V/Ta-rich carbonitrides in CNA1 than that in the Ti-rich carbides in CNA3.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Radiation response of FeCrAl-coated Zircaloy-4

Coating the surface of Zircaloy-4 light water reactor fuel cladding tube is of considerable interest for enhancing its accident tolerance. In this study, thermal annealing of FeCrAl-coated Zircaloy-4 at 725 °C for 500 h, was used to induce interfacial reactions between Zircaloy-4 and FeCrAl. The interface zones were then irradiated by 3.5 MeV Zr ions at 400 °C, up to 50, 100, 150 peak dpa values. Transmission electron microscopy (TEM) and scanning TEM were used to characterize microstructural and composition changes before and after ion irradiation. Three interfacial phases were identified: FeZr 3 , (Fe,Cr) 2 Zr, and ZrC. The widest intermetallic layer, FeZr3, had large grains. The narrower phases, (Fe,Cr)2Zr and ZrC, contained small grains and were often mixed. The unexpected observation of the ZrC phase was attributed to the presence of very small impurity level concentrations of carbon in the powder material. No void swelling was observed in any of the phases, including the FeCrAl coating and Zircaloy-4 substrate. (Fe,Cr) 2 Zr, however, fully amorphized after irradiation, even at the lowest dpa.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Radiation induced hardening of beryllium during low temperature He implantation

The effect of ion irradiation on evolution of microstructure and hardening of beryllium with different impurity levels was investigated using TEM and nanoindentation. High purity S-65 grade and less-pure S-200-F grade were implanted by helium ions at temperatures of 50°C and 200°C. 11 different energies were used, so as to create a quasi-homogeneous 3 µm irradiated layer with average radiation damage of 0.1 dpa and average He content of 2000 appm.Nanoindentation experiments demonstrated that before irradiation, the S-200-F and S-65 grades have an average hardness of 3.7$\pm$0.8 GPa and 3.4$\pm$0.8 GPa correspondently. After implantation the hardness of both grades increased by about 60% for the 200°C irradiation and 100% for the 50°C irradiation. The crystallographic analysis of indented grains demonstrated that in the as-received materials the hardness is about 2.5 times higher when the indentation direction is close to the [0001] c-axis of beryllium compared to indentation perpendicular to [0001]. Hardness anisotropy significantly decreased after irradiation: the “soft orientation” was most sensitive to irradiation-induced hardening, with hardness increasing by about 140% after irradiation at 50°C and 100% after irradiation at 200°C, compared to about 15 - 20% for the “hard” orientation at both irradiation temperatures. The higher purity grade had smaller increase of the “soft orientation” hardness: 2.5$\pm$0.3 GPa for the S-65 and 2.9$\pm$0.2 GPa for the S-200-F.At both temperatures in both grades, under TEM investigation the radiation damage appears as “black dots” which are likely to be small dislocation loops with the number density of ~ 10 22 m -3 . No bubbles were observed by TEM inside grains and at grain boundaries. Analysis of the possible hardening contribution demonstrated that the observed “black dots” could be responsible for up to half of the measured hardening, while the rest of the hardening should originate from helium bubbles with the size below the TEM resolution (at or below 1.5 nm).

36 MATERIALS SCIENCE↗
DOE OSTI2021

High-temperature corrosion of a nickel-based alloy in a molten chloride environment – The effect of thermal and chemical purifications

There is currently an ever-increasing demand for higher process efficiencies in next generation (Gen3) concentrating solar power (CSP). Higher process efficiencies may be procured by increasing the operating temperature, and simultaneously, minimizing the degradation of materials used for construction of CSP plants (e.g., piping, thermal storage tanks, solar receivers and heat exchangers). Thus, understanding materials corrosion in the presence of molten salt mixtures used as thermal energy storage media and heat transfer fluids is indispensable for CSP development. The present paper provides insights into the effects of salt purification on the corrosion of a nickel-based alloy (Haynes 230) isothermally exposed to a stagnant chloride-based salt mixture at 800 °C. The MgCl 2 -based salt mixture was thermally dehydrated and chemically treated with (0.1 and 0.5 wt %) elemental magnesium. Results reveal the electrochemical nature of the corrosion process, and the formation of corrosion products such as oxides (MgO, MgCr 2 O 4 , and MgAl 2 O 4 ) and nitrides (CrN) on the alloy surface and in sub-surface regions. Magnesium additions enhanced the ability to resist corrosion by reducing the concentration of impurities (H 2 O, MgOH + , OH - species) and polarizing the alloy surface. The formation of nitrides in all cases studied indicates the impact of using nitrogen as a protective gas in the system. Results also reveal that a single step treatment of the salt using metallic Mg could be considered as a measure to control the salt's impurity level, e.g., if required for system control.

14 SOLAR ENERGY↗
DOE OSTI2022

High Thermoelectric Performance in Chalcopyrite Cu 1-x Ag x GaTe 2 –ZnTe: Nontrivial Band Structure and Dynamic Doping Effect

The understanding of thermoelectric properties of ternary I–III–VI 2 type (I = Cu, Ag; III = Ga, In; and VI = Te) chalcopyrites is less well developed. Although their thermal transport properties are relatively well studied, the relationship between the electronic band structure and charge transport properties of chalcopyrites has been rarely discussed. In this study, we reveal the unusual electronic band structure and the dynamic doping effect that could underpin the promising thermoelectric properties of Cu 1–x Ag x GaTe 2 compounds. Density functional theory (DFT) calculations and electronic transport measurements suggest that the Cu 1–x Ag x GaTe 2 compounds possess an unusual non-parabolic band structure, which is important for obtaining a high Seebeck coefficient. Moreover, a mid-gap impurity level was also observed in Cu 1–x Ag x GaTe 2 , which leads to a strong temperature-dependent carrier concentration and is able to regulate the carrier density at the optimized value for a wide temperature region and thus is beneficial to obtaining the high power factor and high average ZT of Cu 1–x Ag x GaTe 2 compounds. We also demonstrate a great improvement in the thermoelectric performance of Cu 1–x Ag x GaTe 2 by introducing Cu vacancies and ZnTe alloying. The Cu vacancies are effective in increasing the hole density and the electrical conductivity, while ZnTe alloying reduces the thermal conductivity. As a result, a maximum ZT of 1.43 at 850 K and a record-high average ZT of 0.81 for the Cu 0.68 Ag 0.3 GaTe 2 –0.5%ZnTe compound are achieved.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Narrowing the band gap and suppressing electron–hole recombination in β-Fe 2 O 3 by chlorine doping

Here, the effects of halogen (F, Cl, Br, I, and At) doping in the direct-band-gap β-Fe 2 O 3 semiconductor on its band structures and electron–hole recombination have been investigated by density functional theory. Doping Br, I, and At in β-Fe 2 O 3 leads to transformation from a direct-band-gap semiconductor to an indirect-band-gap semiconductor because their atomic radii are too large; however, F- and Cl-doped β-Fe 2 O 3 remain as direct-band-gap semiconductors. Due to the deep impurity states of the F dopant, this study focuses on the effects of the Cl dopant on the band structures of β-Fe 2 O 3 . Two impurity levels are introduced when Cl is doped into β-Fe 2 O 3 , which narrows the band gap by approximately 0.3 eV. After doping Cl, the light-absorption edge of β-Fe 2 O 3 redshifts from 650 to 776 nm, indicating that its theoretical solar to hydrogen efficiency for solar water splitting increases from 20.6% to 31.4%. In addition, the effective mass of the holes in halogen-doped β-Fe 2 O 3 becomes significantly larger than that in undoped β-Fe 2 O 3 , which may suppress electron–hole recombination.

30 DIRECT ENERGY CONVERSION↗