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At least 37 records · Page 2

Observation of current-induced switching in non-collinear antiferromagnetic IrMn 3 by differential voltage measurements

There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn 3 /Pt devices. A six-terminal double-cross device is constructed, with an IrMn 3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn 3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn 3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

36 MATERIALS SCIENCE↗

Light-Induced Currents at Domain Walls in Multiferroic BiFeO3.

Multiferroic BiFeO3 (BFO) films with spontaneously formed periodic stripe domains can generate above-gap open circuit voltages under visible light illumination; nevertheless the underlying mechanism behind this intriguing optoelectronic response has not been understood to date. Here, we make contact-free measurements of light-induced currents in epitaxial BFO films via detecting terahertz radiation emanated by these currents, enabling a direct probe of the intrinsic charge separation mechanisms along with quantitative measurements of the current amplitudes and their directions. In the periodic stripe samples, we find that the net photocurrent is dominated by the charge separation across the domain walls, whereas in the monodomain samples the photovoltaic response arises from a bulk shift current associated with the non-centrosymmetry of the crystal. The peak current amplitude driven by the charge separation at the domain walls is found to be 2 orders of magnitude higher than the bulk shift current response, indicating the prominent role of domain walls acting as nanoscale junctions to efficiently separate photogenerated charges in the stripe domain BFO films. These findings show that domain-wall-engineered BFO thin films offer exciting prospects for ferroelectric-based optoelectronics, as well as bias-free strong terahertz emitters.

36 MATERIALS SCIENCE↗

Induced Current Detector Simulation

We describe simulations of a detector concept with small, low capacitance, pixels with pitch/thickness ratio on the order of 10. The simulation utilizes 2D and 3D TCAD simulations followed by a generic SPICE front-end model including noise and Landau fluctuations. We also investigate the properties of weighting fields of various geometries. We investigate whether the transient induced current signals can be used to improve pattern recognition and establish track angle.

43 PARTICLE ACCELERATORS↗

Current-induced dynamics and tunable spectra of a magnetic chiral bobber

Chiral bobber (ChB) is an exotic three-dimensional topological texture in chiral magnets. It is composed of a Bloch-point singularity and a skyrmion tube; the incommensurate characteristic length scales of these two components would thus lead to novel dynamics of a ChB. In this work, we report the current-induced motion and the accompanying Hall effect of a ChB. Surprisingly, we find that the Hall angle of a ChB can be tuned in a wide range from -90 ° to positive angles. A further study of spin-wave excitations identified high-frequency resonant modes, which are related to the velocity of ChB and lattice constants. The excited frequency can be two orders of magnitude higher than that of skyrmions. The broad ranges of Hall angles and frequency spectra could boost the development of spintronic devices using topological textures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

An Alternating, Current-Induced Electromagnetic Field for Membrane Fouling and Scaling Control during Desalination of Secondary Effluent from Municipal Wastewater

Membrane treatment of secondary effluent for reuse applications is a promising approach to expand water supplies and provide flexibility to water resources management. However, effective control of membrane fouling and scaling is crucial for cost-effective treatment and system resilience. This study compared the performance of antiscalants to an alternating, current-induced electromagnetic field (EMF) as an alternative pretreatment method to reverse osmosis. Compared to the no-EMF control experiments, the EMF device resulted in 13% higher water recovery and 366% lower flux decline at 60% of water recovery, along with 2–8 times lower precipitation of fouling and scaling, as evidenced by scanning electron microscope, energy dispersive X-ray spectroscopy, and chemical extraction analysis. The combination of the EMF with antiscalant was more effective for reducing membrane fouling and scaling, increasing water recoveries up to 89.3%, as compared to the EMF (67.5%) and antiscalant-only (73.6%) configurations. This is the first study to demonstrate synergistic effects of using an EMF in combination with antiscalants and could lead to lower pretreatment costs. Additional research is required to quantify the economics of this approach and to fully understand the fundamental mechanisms governing fouling and scaling control by an EMF.

42 ENGINEERING↗

High-resolution planar electron beam induced current in bulk diodes using high-energy electrons

Understanding the impact of high-energy electron radiation on device characteristics remains critical for the expanding use of semiconductor electronics in space-borne applications and other radiation harsh environments. Here in this paper, we report on in situ measurements of high-energy electron radiation effects on the hole diffusion length in low threading dislocation density homoepitaxial bulk n-GaN Schottky diodes using electron beam induced current (EBIC) in high-voltage scanning electron microscopy mode. Despite the large interaction volume in this system, quantitative EBIC imaging is possible due to the sustained collimation of the incident electron beam. This approach enables direct measurement of electron radiation effects without having to thin the specimen. Using a combination of experimental EBIC measurements and Monte Carlo simulations of electron trajectories, we determine a hole diffusion length of 264 ± 11 nm for n-GaN. Irradiation with 200 kV electron beam with an accumulated dose of 24 × 10 16 electrons cm -2 led to an approximate 35% decrease in the minority carrier diffusion length.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Current-induced switching of thin film α - Fe 2 O 3 devices imaged using a scanning single-spin microscope

Electrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30-nm-thick, c-axis-oriented α-Fe 2 ⁢O 3 Hall devices using a diamond nitrogen-vacancy center scanning microscope. Using the canted moment of α-Fe 2⁢ O 3 as a magnetic handle on its Néel vector, we apply a saturating in-plane magnetic field to create a known initial state before letting the state relax in low field for magnetic imaging. Here, we repeat this procedure for different in-plane orientations of the initialization field. We find that the magnetic field images are characterized by stronger magnetic textures for fields along [$\overline{11}$20] and 11$\overline{2}$0, suggesting that despite the expected 3-fold magnetocrystalline anisotropy, our α-Fe 2 ⁢O 3 thin films have an overall in-plane uniaxial anisotropy. We also study current-induced switching of the magnetic order in α-Fe 2 ⁢O 3 . We find that the fraction of the device that switches depends on the current pulse duration, amplitude, and direction relative to the initialization field.

36 MATERIALS SCIENCE↗

Opposite current-induced spin polarizations in bulk-metallic Bi 2 Se 3 and bulk-insulating Bi 2 Te 2 Se topological insulator thin flakes

One of the most fundamental and exotic properties of three-dimensional (3D) topological insulators (TIs) is spin-momentum locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba-type spin-orbit interaction (SOI) and bulk-conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current-induced spin polarization (CISP) difficult. Here, we directly compared the CISP between bulk-insulating Bi 2 Te 2 Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk-insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity. However, compared to BTS221, an opposite CISP is observed in the bulk-metallic Bi2Se3, consistent with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk intrinsic spin Hall Effect (SHE). If one assumes a representative occupation of the Rashba band of 3×10 13 cm –2 in Bi 2 Se 3 with a relevant relaxation time of 100 fs, the contribution to the CISP could be more dominated by the bulk intrinsic SHE. Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electric current-induced precipitation hardening in advanced high-strength steel

Effect of electric current on precipitation hardening for advanced high-strength steel is investigated based on mechanical testing and microscopic observation. Complex-phase steel containing nano-sized Nb-bearing carbides was used. By comparing the flow stress between uniaxial tension with applied electric current (pulsed tension) and without electric current (nonpulsed tension) at various elevated temperatures, the influence of electric current on precipitation hardening was confirmed. A higher values of Vickers hardness and full-width-at-half-maximum were obtained in the pulsed tensile specimen compared to the identically heat treated specimen after the same deformation. Small angle neutron scattering analysis showed that the volume fraction and mean diameter of newly formed precipitates in the pulsed tensile specimen were higher and larger than those in the induction heat treated specimen, respectively. In conclusion, it clearly shows that additional precipitation hardening could be induced by the athermal effect of electric current, which is distinct from the thermal effect of Joule heating.

36 MATERIALS SCIENCE↗

Revealing the electronic structure of the current-induced metastable state in 1T-TaS 2

Among the key features for next-generation memory devices is the need for high-contrast switching between metallic and insulating states with fast switching speed and long lifetime. However, materials exhibiting such properties are rare, and their electronic structure is often poorly understood. Here, by combining state-of-the-art devices with angle-resolved photoemission spectroscopy, we study the emergence of a metastable metallic state from the insulating ground state in the charge-density wave (CDW) material 1T-TaS 2 after applying short current pulses. Analysis of the electronic structure suggests a picture in which 1T-TaS 2 transforms from a band insulator in the commensurate CDW ground state to a correlated metal in the metastable state. Moreover, the optically induced metastable state reveals a strong similarity to the current-induced one. This work provides an extensive characterization of metastable order in 1T-TaS 2 and proves how studying electronic properties under in-operando conditions is a critical step for next-generation devices.

Huber, Maximilian [Lawrence Berkeley National Labo↗

Suppressing Screening-Current-Induced Strain in a 72-mm-Bore REBCO Insert for a 20-T Magnet: A Numerical Study

Rare-earth barium copper oxide (REBCO) high-temperature superconducting (HTS) magnets are considered a game changer for the capability of generating magnetic fields exceeding 20 T at or above liquid helium temperature, combined with the potential for substantially reduced manufacturing and operational costs. Princeton Plasma Physics Laboratory is dedicated to developing large-bore high-field superconducting magnet systems to support forefront physics research. Here, our current project focuses on a φ72-mm cold-bore REBCO insert comprising 21 dry-wound double-pancake coils, designed to generate at least 8 T when nested within a 12-T outsert magnet. A significant challenge for high-field REBCO magnets is the time-varying-magnetic-field-induced screening currents (SC) in the REBCO conductors, which can cause localized strain and stress concentrations. This paper presents a numerical study of the SC-induced strain in the REBCO insert magnet, confirming that the SC-induced strain can be substantially suppressed by energizing the REBCO insert before the outsert magnets. We discuss and reveal the mechanism behind this reduction. By applying this strategy, we expect to unleash the potential of the REBCO insert magnet to generate up to 12 T in a 12-T background field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Room-Temperature, Current-Induced Magnetization Self-Switching in A Van Der Waals Ferromagnet

2D layered materials with broken inversion symmetry are being extensively pursued as spin source layers to realize high-efficiency magnetic switching. Such low-symmetry layered systems are, however, scarce. In addition, most layered magnets with perpendicular magnetic anisotropy show a low Curie temperature. Here, in this study, the experimental observation of spin–orbit torque magnetization self-switching at room temperature in a layered polar ferromagnetic metal, Fe 2.5 Co 2.5 GeTe 2 is reported. The spin–orbit torque is generated from the broken inversion symmetry along the c-axis of the crystal. These results provide a direct pathway toward applicable 2D spintronic devices.

36 MATERIALS SCIENCE↗

Giant orbital magnetoelectric effect and current-induced magnetization switching in twisted bilayer graphene

Recently, quantum anomalous Hall effect with spontaneous ferromagnetism was observed in twisted bilayer graphenes (TBG) near 3/4 filling. Importantly, it was observed that an extremely small current can switch the direction of the magnetization. This offers the prospect of realizing low energy dissipation magnetic memories. However, the mechanism of the current-driven magnetization switching is poorly understood as the charge currents in graphenes are generally believed to be non-magnetic. In this work, we demonstrate that in TBG, the twisting and substrate induced symmetry breaking allow an out of plane orbital magnetization to be generated by a charge current. Moreover, the large Berry curvatures of the flat bands give the Bloch electrons large orbital magnetic moments so that a small current can generate a large orbital magnetization. We further demonstrate how the charge current can switch the magnetization of the ferromagnetic TBG near 3/4 filling as observed in the experiments.

36 MATERIALS SCIENCE↗

Long-range current-induced spin accumulation in chiral crystals

Abstract Chiral materials, similarly to human hands, have distinguishable right-handed and left-handed enantiomers which may behave differently in response to external stimuli. Here, we use for the first time an approach based on the density functional theory (DFT)+PAOFLOW calculations to quantitatively estimate the so-called collinear Rashba–Edelstein effect (REE) that generates spin accumulation parallel to charge current and can manifest as chirality-dependent charge-to-spin conversion in chiral crystals. Importantly, we reveal that the spin accumulation induced in the bulk by an electric current is intrinsically protected by the quasi-persistent spin helix arising from the crystal symmetries present in chiral systems with the Weyl spin–orbit coupling. In contrast to conventional REE, spin transport can be preserved over large distances, in agreement with the recent observations for some chiral materials. This allows, for example, the generation of spin currents from spin accumulation, opening novel routes for the design of solid-state spintronics devices.

Roy, Arunesh↗

First observation of currents induced by Alfven eigenmodes in a magnetic confinement device

Instabilities driven by energetic particles normally reduce fusion power but recent studies find Alfven eigenmode instabilities can drive ``zonal" flows and currents that reduce thermal transport, improving overall performance. Motional Stark effect (MSE) data from the DIII-D tokamak reveal changes in magnetic pitch angle during the phase when Alfven-eigenmode nonlinearity drives zonal flows, suppresses microturbulence, and increases the electron and ion temperatures. Finally, measured changes in safety factor of ∆q/q ≃ 5% occur in roughly 20 ms, consistent with a rough estimate based on the measured zonal flow.

Heidbrink, W. W. [Univ. of California, Irvine, CA ↗

Test Results of Fast Decaying Current-Induced AC Losses in SHMS Superconducting Magnets at Jefferson Lab

The 11 GeV Super High Momentum Spectrometer (SHMS) of Hall C, part of the recent 12 GeV accelerator Upgrade at Jefferson Lab, was successfully commissioned in 2017. Fast current discharges of the SHMS Q2, Q3 quadrupoles and dipole superconducting magnets experienced some level of operational difficulty, during commissioning and normal operation. Measurements and analyses demonstrate that the fast current discharge leads to substantial AC losses in the conductor and subsequently triggers a quench-back effect. The details of the measurements and analyses have been reported previously. This paper focuses on the test results of the magnets using a reduced value of the protection dump resistor for each magnet to lower the current decay rate. Finally, the test results confirmed that the reduced dump resistances eliminated the quench-back effect for the SHMS Q2, Q3 and Dipole magnets, thus improving their cryogenic operability.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Colossal anisotropic absorption of spin currents induced by chirality

The chiral induced spin selectivity (CISS) effect, in which the structural chirality of a material determines the preference for the transmission of electrons with one spin orientation over that of the other, is emerging as a design principle for creating next-generation spintronic devices. CISS implies that the spin preference of chiral structures persists upon injection of pure spin currents and can act as a spin analyzer without the need for a ferromagnet. Here, we report an anomalous spin current absorption in chiral metal oxides that manifests a colossal anisotropic nonlocal Gilbert damping with a maximum-to-minimum ratio of up to 1000%. A twofold symmetry of the damping is shown to result from differential spin transmission and backscattering that arise from chirality-induced spin splitting along the chiral axis. These studies reveal the rich interplay of chirality and spin dynamics and identify how chiral materials can be implemented to direct the transport of spin current.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Current–Induced Ion Concentration Polarization at a Perfect Ion–Exchange Patch in an Infinite Insulating Wall

This research examines theoretically the ion concentration polarization, ion fluxes, and electrostatic fields near an ion exchange patch in the wall of an electrified fluidic channel. These phenomena are important in related microfluidic ion-preconcentration systems. Under an electric field, counterions enter the ion-exchange patch at one side and leave at the other, with salt depletion occurring near the entrance and accumulation near the exit. Furthermore, the high patch conductivity and the concentration profiles lead to local electric field perturbations that may facilitate preconcentration. This study includes analytical expressions of ion concentrations and electrochemical potentials at small to moderate electric fields, as well as numerical simulations. Additionally, a simple matrix of polynomial coefficients (obtained via fitting of numerical data) enables analytical calculation of the 2-dimensional concentration profiles at all electric fields within the range investigated in the numerical simulations. This is possible because a single dimensionless parameter controls this problem.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗