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At least 37 records · Page 2

Incubating advances in integrated photonics with emerging sensing and computational capabilities

As photonic technologies grow in multidimensional aspects, integrated photonics holds a unique position and continuously presents enormous possibilities for research communities. Applications include data centers, environmental monitoring, medical diagnosis, and highly compact communication components, with further possibilities continuously growing. Herein, we review state-of-the-art integrated photonic on-chip sensors that operate in the visible to mid-infrared wavelength region on various material platforms. Among the different materials, architectures, and technologies leading the way for on-chip sensors, we discuss the optical sensing principles that are commonly applied to biochemical and gas sensing. Our focus is on passive optical waveguides, including dispersion-engineered metamaterial-based structures, which are essential for enhancing the interaction between light and analytes in chip-scale sensors. We harness a diverse array of cutting-edge sensing technologies, heralding a revolutionary on-chip sensing paradigm. Our arsenal includes refractive-index-based sensing, plasmonics, and spectroscopy, which forge an unparalleled foundation for innovation and precision. Furthermore, we include a brief discussion of recent trends and computational concepts, incorporating Artificial Intelligence & Machine Learning (AI/ML) and deep learning approaches over the past few years to improve the qualitative and quantitative analysis of sensor measurements.

Jain, Sourabh (ORCID:0000000279923275)↗

Integrated photonic structures for photon-mediated entanglement of trapped ions

Trapped atomic ions are natural candidates for quantum information processing and have the potential to realize or improve quantum computing, sensing, and networking. These applications often require the collection of individual photons emitted from ions into guided optical modes, in some cases for the production of entanglement between separated ions. Proof-of-principle demonstrations of such photon collection from trapped ions have been performed using high-numerical-aperture lenses or cavities and single-mode fibers, but integrated photonic elements in ion-trap structures offer advantages in scalability and manufacturability over traditional optics. In this paper we analyze structures monolithically fabricated with an ion trap for collecting ion-emitted photons, coupling them into waveguides, and manipulating them via interference. We calculate geometric limitations on collection efficiency for this scheme, simulate a single-layer grating that shows performance comparable to demonstrated free-space optics, and discuss practical fabrication and fidelity considerations. Based on this analysis, we conclude that integrated photonics can support scalable systems of trapped ions that can distribute quantum information via photon-mediated entanglement.

Knollmann, Felix W.↗

Efficient excitation and control of integrated photonic circuits with virtual critical coupling

Critical coupling in integrated photonic devices enables the efficient transfer of energy from a waveguide to a resonator, a key operation for many applications. This condition is achieved when the resonator loss rate is equal to the coupling rate to the bus waveguide. Carefully matching these quantities is challenging in practice, due to variations in the resonator properties resulting from fabrication and external conditions. Here, we demonstrate that efficient energy transfer to a non-critically coupled resonator can be achieved by tailoring the excitation signal in time. We rely on excitations oscillating at complex frequencies to load an otherwise overcoupled resonator, demonstrating that a virtual critical coupling condition is achieved if the imaginary part of the complex frequency equals the mismatch between loss and coupling rate. We probe a microring resonator with tailored pulses and observe a minimum intensity transmission T = 0.11 in contrast to a continuous-wave transmission T = 0.58, corresponding to 8 times enhancement of intracavity intensity. Our technique opens opportunities for enhancing and controlling on-demand light-matter interactions for linear and nonlinear photonic platforms.

42 ENGINEERING↗

Giant Nonreciprocity and Gyration through Modulation-Induced Hatano-Nelson Coupling in Integrated Photonics

Asymmetric energy exchange interactions, also known as Hatano-Nelson type couplings, enable the study of non-Hermitian physics and associated phenomena like the non-Hermitian skin effect and exceptional points (EPs). Since these interactions are by definition nonreciprocal, there have been very few options for implementations in integrated photonics. Here, in this work, we show that asymmetric couplings are readily achievable in integrated photonic systems through time-domain dynamic modulation. We experimentally study this concept using a two-resonator photonic molecule produced in a lithium niobate on insulator platform that is electro-optically modulated by rf stimuli. We demonstrate the dynamic tuning of the Hatano-Nelson coupling between the resonators, surpassing the asymmetry that has been achieved in previous work, to reach an EP for the first time. We are additionally able to flip the relative sign of the couplings for opposite directions by going past the EP. Using this capability, we show that the through-chain transport can be configured to exhibit both giant (~60 dB) optical contrast as well as photonic gyration or nonreciprocal π phase contrast.

42 ENGINEERING↗

Programmable photonic integrated meshes for modular generation of optical entanglement links

Abstract Large-scale generation of quantum entanglement between individually controllable qubits is at the core of quantum computing, communications, and sensing. Modular architectures of remotely-connected quantum technologies have been proposed for a variety of physical qubits, with demonstrations reported in atomic and all-photonic systems. However, an open challenge in these architectures lies in constructing high-speed and high-fidelity reconfigurable photonic networks for optically-heralded entanglement among target qubits. Here we introduce a programmable photonic integrated circuit (PIC), realized in a piezo-actuated silicon nitride (SiN)-in-oxide CMOS-compatible process, that implements an N × N Mach–Zehnder mesh (MZM) capable of high-speed execution of linear optical transformations. The visible-spectrum photonic integrated mesh is programmed to generate optical connectivity on up to N = 8 inputs for a range of optically-heralded entanglement protocols. In particular, we experimentally demonstrated optical connections between 16 independent pairwise mode couplings through the MZM, with optical transformation fidelities averaging 0.991 ± 0.0063. The PIC’s reconfigurable optical connectivity suffices for the production of 8-qubit resource states as building blocks of larger topological cluster states for quantum computing. Our programmable PIC platform enables the fast and scalable optical switching technology necessary for network-based quantum information processors.

47 OTHER INSTRUMENTATION↗

Silicon-On-Silicon Carbide Platform for Integrated Photonics

Silicon carbide (SiC)'s nonlinear optical properties and applications to quantum information have recently brought attention to its potential as an integrated photonics platform. However, despite its many excellent material properties, such as large thermal conductivity, wide transparency window, and strong optical nonlinearities, it is generally a difficult material for microfabrication. Here, it is shown that directly bonded silicon-on-silicon carbide can be a high-performing hybrid photonics platform that does not require the need to form SiC membranes or directly pattern in SiC. The optimized bonding method yields defect-free, uniform films with minimal oxide at the silicon–silicon–carbide interface. Ring resonators are patterned into the silicon layer with standard, complimentary metal–oxide–semiconductor (CMOS) compatible (Si) fabrication and measure room-temperature, near-infrared quality factors exceeding 10 5 . The corresponding propagation loss is 5.7 dB cm -1 . The process offers a wafer-scalable pathway to the integration of SiC photonics into CMOS devices.

36 MATERIALS SCIENCE↗

Dry etching of epitaxial InGaAs/InAlAs/InAlGaAs structures for fabrication of photonic integrated circuits

A dry etching process to transfer the pattern of a photonic integrated circuit design for high-speed laser communications is described. The laser stack under consideration is a 3.2-µm-thick InGaAs/InAlAs/InAlGaAs epitaxial structure grown by molecular beam epitaxy. The etching was performed using Cl2-based inductively-coupled-plasma and reactive-ion-etching (ICP-RIE) reactors. Four different recipes are presented in two similar ICP-RIE reactors, with special attention paid to the etched features formed with various hard mask compositions, in-situ passivations, and process temperatures. The results indicate that it is possible to produce high-aspect-ratio features with sub-micron separation on this multilayer structure. Additionally, the results of the etching highlight the tradeoffs involved with the corresponding recipes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

PINE: Photonic Integrated Networked Energy efficient datacenters

We review the motivation, goals, and achievements of the Photonic Integrated Networked Energy efficient datacenter (PINE) project, which is part of the Advanced Research Projects Agency–Energy (ARPA-E) ENergy-efficient Light-wave Integrated Technology Enabling Networks that Enhance Dataprocessing (ENLITENED) program. Here, the PINE program leverages the unique features of photonic technologies to enable alternative mega-datacenters and high-performance computing (HPC) system architectures that deliver more substantial energy efficiency improvements than can be achieved through link energy efficiency alone. In phase 1 of the program, the PINE system architecture demonstrated an average factor of 2.2× improvement in transactions/joule across a diverse set of HPC and datacenter applications. In phase 2, PINE will demonstrate an aggressive 1.0 pJ/bit total link budget with high-bandwidth-density dense wavelength-division multiplexing (DWDM) links to enable additional 2.5× or more efficiency gains through deep resource disaggregation.

42 ENGINEERING↗

CMOS photonic integrated circuit for flex-grid polarization entanglement

We showcase a CMOS-fabricated silicon photonic integrated circuit employing a bidirectionally pumped microring and polarization splitter-rotators for high-fidelity polarization entanglement. Spanning the optical C+L-band, this source is ideal for wavelength-multiplexed entanglement distribution in multi-user networks.

Miloshevsky, Alex↗

Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

The primary mechanism of optical memoristive devices relies on phase transitions between amorphous and crystalline states. The slow or energy-hungry amorphous–crystalline transitions in optical phase-change materials are detrimental to the scalability and performance of devices. Leveraging an integrated photonic platform, nonvolatile and reversible switching between two layered structures of indium selenide (In 2 Se 3 ) triggered by a single nanosecond pulse is demonstrated. The high-resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With interlayer “shear glide” and isosymmetric phase transition, switching between the α- and β-structural states contains low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline–crystalline phase transition are experimentally characterized in molecular-beam-epitaxy-grown thin films and compared to ab initio calculations. Finally, the nonlinear resonator transmission spectra measure of incremental linear loss rate of 3.3 GHz, introduced by a 1.5 µm-long In 2 Se 3 -covered layer, resulted from the combinations of material absorption and scattering.

36 MATERIALS SCIENCE↗

Integrated photonics on thin-film lithium niobate

Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades—from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in our cell phones. This half-century-old material is currently embracing a revolution in thin-film LN integrated photonics. The successes of manufacturing wafer-scale, high-quality thin films of LN-on-insulator (LNOI) and breakthroughs in nanofabrication techniques have made high-performance integrated nanophotonic components possible. With rapid development in the past few years, some of these thin-film LN devices, such as optical modulators and nonlinear wavelength converters, have already outperformed their legacy counterparts realized in bulk LN crystals. Furthermore, the nanophotonic integration has enabled ultra-low-loss resonators in LN, which has unlocked many novel applications such as optical frequency combs and quantum transducers. In this review, we cover—from basic principles to the state of the art—the diverse aspects of integrated thin-film LN photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto-optics. We also identify challenges that this platform is currently facing and point out future opportunities. The field of integrated LNOI photonics is advancing rapidly and poised to make critical impacts on a broad range of applications in communication, signal processing, and quantum information.

Zhu, Di (ORCID:0000000302101860)↗

Precise electron beam-based target-wavelength trimming for frequency conversion in integrated photonic resonators

We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on a silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of 10 4 . Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion.

Thiel, Lillian↗

Ultralow 0.034 dB/m loss wafer-scale integrated photonics realizing 720 million Q and 380 μW threshold Brillouin lasing

We demonstrate 0.034 dB/m loss waveguides in a 200-mm wafer-scale, silicon nitride (Si 3 N 4 ) CMOS-foundry-compatible integration platform. We fabricate resonators that measure up to a 720 million intrinsic Q resonator at 1615 nm wavelength with a 258 kHz intrinsic linewidth. This resonator is used to realize a Brillouin laser with an energy-efficient 380 µW threshold power. The performance is achieved by reducing scattering losses through a combination of single-mode TM waveguide design and an etched blanket-layer low-pressure chemical vapor deposition (LPCVD) 80 nm Si 3 N 4 waveguide core combined with thermal oxide lower and tetraethoxysilane plasma-enhanced chemical vapor deposition (TEOS–PECVD) upper oxide cladding. This level of performance will enable photon preservation and energy-efficient generation of the spectrally pure light needed for photonic integration of a wide range of future precision scientific applications, including quantum, precision metrology, and optical atomic clocks.

Liu, Kaikai (ORCID:0000000213609646)↗

Mode-multiplexed photonic integrated vector dot-product core from inverse design

Photonic computing has the potential to harness the full degrees of freedom (DOFs) of the light field, including the wavelength, spatial mode, spatial location, phase quadrature, and polarization, to achieve a higher level of computing parallelism and scalability than digital electronic processors. While multiplexing using the wavelength and other DOFs can be readily integrated on silicon photonics platforms with compact footprints, conventional mode-division multiplexed (MDM) photonic designs occupy areas exceeding tens to hundreds of microns for a few spatial modes, significantly limiting their scalability. Here, we utilize inverse design to demonstrate an ultracompact photonic computing core that calculates vector dot products based on MDM coherent mixing. Our dot-product core integrates the functionalities of two-mode multiplexers and one multimode coherent mixer within a nominal footprint of 5 μm x 3 μm . We have experimentally demonstrated computing examples on the fabricated dot-product core, including complex number multiplication and motion estimation using optical flow. The compact dot-product core design enables large-scale on-chip integration in a parallel photonic computing primitive cluster for high-throughput scientific computing and computer vision tasks.

97 MATHEMATICS AND COMPUTING↗

Collection of fluorescence from an ion using trap-integrated photonics

Spontaneously emitted photons are entangled with the electronic and nuclear degrees of freedom of the emitting atom, so interference and measurement of these photons can entangle separate matter-based quantum systems as a resource for quantum information processing. Since confinement in a single-mode facilitates the photon interference needed for generating entanglement, the dipole emission patterns relevant in spontaneous emission present a mode-matching challenge. Current demonstrations rely on bulk photon-collection and manipulation optics that suffer from large component size and system-to-system variability—factors that impede scaling to the large numbers of entangled pairs needed for quantum information processing. To address these limitations, we demonstrate a collection method that enables passive phase stability, straightforward photonic manipulation, and intrinsic reproducibility. Specifically, we engineer a waveguide-integrated grating to couple photons emitted from a trapped ion into a single optical mode within a microfabricated ion-trap chip. Using the integrated collection optic, we characterize the collection efficiency, image the ion, and detect the ion’s quantum state. The integrated optic covers 2.18% of the solid angle and collects 1.97 ± 0.3% of the spontaneously emitted light incident on the grating for a total collection efficiency of 0.043% into a single-mode waveguide. This proof-of-principle demonstration lays the foundation for leveraging the inherent stability and reproducibility of integrated photonics to create, manipulate, and measure multipartite quantum states in arrays of quantum emitters.

Optical physics↗