BaZrO3-Ni-defect-formation
These data include migration energies for interstitial Ni defects in doped and undoped BaZrO3, as well as formation energies for Ni-related defects and defect complexes.
08 HYDROGEN↗
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Results for “Interstitial doping”
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Understanding the Role of Extrinsic Impurities in Bulk Nb SRF Cavities
High gradient and high quality factor superconducting radiofrequency (SRF) cavities are essential for efficient particle acceleration in next-generation accelerators. This work demonstrates that the superconducting performance of bulk niobium can be enhanced through a controlled introduction of interstitial oxygen and nitrogen. Thermal and chemical surface treatments modify the concentration and distribution of these impurities, enabling systematic tuning of SRF cavity performance. By combining cavity RF measurements with quantitative materials characterizations, we isolate the impact of impurity concentration on BCS surface resistance and identify the mechanisms by which interstitial impurities alter the superconducting properties of niobium. We find that nitrogen is an order of magnitude more effective than oxygen in reducing BCS resistance at 16 MV/m and that the reduction arises from a combination of mean free path optimization and superconducting gap enhancement. Using these insights, we develop a predictive model that estimates cavity performance directly from room temperature sample material studies, reducing the reliance on full-scale cryogenic tests for surface treatment development. We then apply this model to explore co-doping strategies, demonstrating that combining interstitial oxygen and nitrogen achieves a synergistic reduction in BCS resistance. These results establish co-doping as a viable path for the development of surface-engineered niobium for future high quality factor SRF applications.
Hu, Hannah [Chicago U.]↗
Effect of Mg and Ni impurities on tritium diffusion in lithium ceramics through cluster dynamics simulations
This study investigates the impact of Mg and Ni doping on tritium diffusion in LiAlO 2 and LiAl 5 O 8 ceramics, that are used in tritium-producing burnable absorber rods (TPBARs). Utilizing Centipede simulations across a broad temperature range (500 K to 1250 K), we explore the interplay between defect dynamics, cluster formation, and tritium mobility. In LiAlO 2 , Mg doping significantly enhances tritium diffusivity by increasing tritium interstitial concentrations and diffusion coefficients of key species, thereby doubling the overall tritium diffusivity. Ni doping, while shifting the dominant defect to Li vacancies, maintains high tritium mobility due to the low binding energy of Li vacancy-tritium complexes, which ensures effective tritium migration. In LiAl 5 O 8 , Mg and Ni doping results in a slight reduction in the diffusion coefficients of key species, yet the dramatic increase in tritium interstitial concentrations compensates, leading to a net small increase in tritium diffusivity. In conclusion, the findings highlight the critical role of defects in tritium transport and the effect of Mg and Ni defects on the performance of these ceramics in demanding nuclear environments.
Cluster dynamics↗
Dynamical defects in a two-dimensional Wigner crystal: Self-doping and kinetic magnetism
We study the quantum dynamics of interstitials and vacancies in a two-dimensional Wigner crystal (WC) using a semi-classical instanton method that is asymptotically exact at low density, i.e., in the r s → ∞ limit. Here, the dynamics of these point defects mediates magnetism with much higher energy scales than the exchange energies of the pure WC. Via exact diagonalization of the derived effective Hamiltonians in the single-defect sectors, we find the dynamical corrections to the defect energies. The resulting expression for the interstitial (vacancy) energy extrapolates to 0 at r s = r mit ≈ 70 (r s ≈ 30), suggestive of a self-doping instability to a partially melted WC for some range of r s below r mit . We thus propose a “metallic electron crystal” phase of the two-dimensional electron gas at intermediate densities between a low density insulating WC and a high density Fermi fluid.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Mn-doped oxide nuclear fuel
A nuclear fuel includes uranium(IV) oxide (UO2) and manganese (Mn) as a dopant. The Mn dopant may be present in the fuel in an amount up to the solubility limit for Mn under a given set of conditions, for example, about 0.01 wt % to about 1 wt %. The nuclear fuel is substantially free of aluminum (Al). The nuclear fuel exhibits enhanced grain size development during sintering temperatures as low at 1400 K due to an increase in uranium sub-lattice vacancies induced by dissolution of the Mn dopant at interstitial defect sites. The Mn-doped nuclear fuel exhibits improved grain sizes at lower temperatures compared to Cr-, Al-, and undoped UO2, and therefore desirably exhibits lower fission gas release and higher plasticity, reducing the chances of fuel rod failure.
Cooper, Michael William Donald↗
Thermodynamic Modeling of Complex Solid Solutions in the Lu-H-N System via Graph Neural Network Accelerated Monte Carlo Simulations
Metal hydrides are important across diverse applications, such as hydrogen storage, batteries, gas sensors, nuclear reactions, and high-temperature superconductivity. Previous computational studies of metal hydrides under extreme pressures, e.g., 𝑂(10 2 ) GPa, usually treat them as stoichiometric compounds without considering interstitial lattice disorder. As pressures become more moderate in the 𝑂(10 0 ) GPa and below range, hydrogen disorder at interstitial lattice sites becomes prominent, e.g., in the N-doped Lu hydride that was recently claimed superconducting near 1 GPa. Further adding compositional complexity from alloying and/or multielement interstitial occupation makes elucidating pressure- and temperature-dependent observables intractable by first-principles calculations alone. We therefore propose a lattice graph neural-network surrogate modeling approach to predict configuration- and pressure-dependent equation-of-state properties. Their efficiency permits Monte Carlo simulations to calculate Gibbs energies and pressure-dependent phase diagrams, thereby revealing insights into the synthesis conditions required for achieving desired phase equilibria. We demonstrate this concept for the compositionally complex cubic Lu(H,N,Va) 3 system where three constituents (hydrogen, nitrogen and vacancy) have disordered multielement interstitial occupancies and insights into pressure-dependent phase equilibria are critically needed, e.g., N-doping levels can significantly lower dehydrogenation temperatures and provide a new strategy to optimize hydrogen-storage alloys. This work can improve the thermodynamic understanding of the Lu-H-N system and help rational synthesis of N-doped Lu hydrides, but more generally demonstrates an efficient approach to model pressure-dependent thermodynamics of multicomponent solid solutions.
Monte Carlo methods↗
Impact of nitrogen and oxygen interstitials on niobium SRF cavity performance
Superconducting radio frequency (SRF) cavities are the leading technology for highly efficient particle acceleration, and their performance can be significantly enhanced through the controlled introduction of interstitial impurities into bulk niobium. Nitrogen doping has demonstrated a substantial reduction in surface resistance, which improves the quality factor of the cavities. More recently, oxygen doping has emerged as a promising alternative, demonstrating comparable reductions in surface resistance. In this study, we combine cavity measurements on 1.3 GHz niobium SRF cavities subjected to a range of nitrogen- and oxygen-based treatments with material characterizations performed on cavity cutouts processed under identical conditions. This approach allows us to quantitatively assess the contribution of each impurity to the reduction of surface resistance. We find that nitrogen is ten times more effective than oxygen in reducing surface resistance at 16 MV/m. We also observe an additive effect of O and N impurities in reducing RT. We discuss these results in the context of field-dependent nonequilibrium superconductivity, gap enhancement, and hydrogen trapping mechanisms.
Hu, H. [Chicago U.; Fermilab] (ORCID:0009000330621↗
Metal ion dopant-induced famatinite to chalcostibite phase transformation of copper antimony sulphide colloidal nanostructures: effect on photophysical and pseudocapacitance properties
Here, the strategic doping of transition metal ions into copper antimony sulphide (CAS) semiconducting nanostructures can significantly influence their photophysical and pseudocapacitive properties, for which there are few reports and therefore is the focus of this study. Accordingly, highly crystalline metal ion (Mn 2+ , Fe 2+ , Co 2+ , Ni 2+ and Zn 2+ ) doped off-stoichiometric copper rich/poor, antimony-rich/poor, and sulphur-poor CAS nanostructures (10–23 nm) were grown via colloidal (hot-injection) synthesis using metal diethyldithiocarbamate precursors. Importantly, metal ion doping significantly influences the structure and composition of the off-stoichiometric CAS nanostructures. Data from powder X-ray diffraction, Raman spectroscopy, high-resolution scanning/transmission electron microscopy, and energy dispersive X-ray spectroscopy confirm that the heavier metal ion dopants induce a novel phase transformation from famatinite (fCAS) to chalcostibite (cCAS) nanostructures. The influence of the metal ion dopants is also observed in the optical properties of as-synthesized nanostructures. This involves blue-shifted ultraviolet-visible absorption, reduced Urbach tailing, and tunable bandgaps between 2.17 and 2.38 eV. Also, the doped nanostructures display broad visible-near infrared photoluminescence via a triple radiative pathway with relatively short decay lifetimes between 0.2 and 6.1 ns. This is mediated by electronic transitions involving intrinsic (copper/antimony/sulphur interstitial) and extrinsic (metal ion interstitial) defect states. Additionally, electrodes prepared from Mn 2+ -doped fCAS nanostructures show enhanced pseudocapacitance via Na+ surface adsorption and intercalation relative to undoped fCAS electrodes, while Zn 2+ -doped cCAS electrodes exhibit pseudocapacitance via a combination of Na+ surface adsorption, intercalation, and redox reactions. These electrodes exhibit reduced charge transfer resistance, improved electronic conductivity and notably enhanced specific capacitance (∼222 F g −1 ), and charge transport, as measured in 1 M Na 2 SO 4 electrolyte via cyclic voltammetry and electrochemical impedance spectroscopy. To this end, the discovery of the metal ion-induced phase transformation presents a new avenue for optimizing the functional properties of fCAS and cCAS nanostructures, highlighting the critical role of metal ion-related defects in controlling the optical and electrochemical properties, towards potential solar absorption and energy storage applications.
25 ENERGY STORAGE↗
Assessing Carrier Mobility, Dopability, and Defect Tolerance in the Chalcogenide Perovskite Ba Zr S 3
The chalcogenide perovskite Ba Zr S 3 has attracted much attention as a promising solar absorber for thin-film photovoltaics. Here we use first-principles calculations to evaluate its carrier transport and defect properties. We find that Ba Zr S 3 has a phonon-limited electron mobility of 37 cm 2 / V s, which is comparable to that in halide perovskites, but lower hole mobility of 11 cm 2 / V s. The defect computations indicate that Ba Zr S 3 is intrinsically n -type due to shallow sulfur vacancies, but that strong compensation by sulfur vacancies will prevent attempts to make it p -type. We also establish that Ba Zr S 3 shows some degree of defect tolerance, presenting only few low formation energy, deep intrinsic defects. Among the deep defects, sulfur interstitials are the dominant nonradiative recombination centers but exhibit a moderate capture coefficient. Our work highlights the material’s intrinsic limitations in carrier mobility and p -type doping, and suggests focusing on suppressing the formation of sulfur interstitials to achieve longer carrier lifetime. Published by the American Physical Society 2024
Yuan, Zhenkun (ORCID:0000000272005973)↗
Mitigation of Pitting on Nitrogen-Doped Niobium Surfaces through Two-Step Electropolishing
Surface processing of niobium superconducting RF cavities used in particle accelerators is crucial for determining their performance. The nitrogen (N)-doping method, developed at Fermilab, enhances the cavities’ quality factor by doping the cavity’s interior surface with N atoms at 800 °C. After N-doping, electropolishing (EP) is employed to remove the niobium nitride phases and attain the desired concentration of interstitial N atoms. This study explores the effects of EP conditions on N-doped niobium samples. The samples were electropolished at 5 to 40 °C and voltages between 3 and 22 V. Different EP voltage ranges produced two types of pits, classified based on their sizes. Larger pits, linked to higher voltages, are also affected by the reaction rate. Pitting could be reduced at a lower temperature and adequate EP voltage. However, to effectively minimize gas evolution forming large-sized pitting, peeling off the top nitride layer before EP might be beneficial. This was achieved through precise low-voltage etching, forming a two-step EP process. The process involves removing the top 100–200 nm layer at a low voltage, followed by standard EP to remove the required material. This two-step EP process effectively mitigated the pitting risk associated with gas evolution on N-doped surfaces.
43 PARTICLE ACCELERATORS↗
Is Ba 3 In 2 O 6 a high- T c superconductor?
It has been suggested that Ba 3 In 2 O 6 might be a high-Tc superconductor. Experimental investigation of the properties of Ba 3 In 2 O 6 was long inhibited by its instability in air. Recently epitaxial Ba 3 In 2 O 6 with a protective capping layer was demonstrated, which finally allows its electronic characterization. The optical bandgap of Ba3In2O6 is determined to be 2.99 eV in-the (001) plane and 2.83 eV along the c-axis direction by spectroscopic ellipsometry. First-principles calculations were carried out, yielding a result in good agreement with the experimental value. Various dopants were explored to induce (super-)conductivity in this otherwise insulating material. Neither A- nor B-site doping proved successful. The underlying reason is predominately the formation of oxygen interstitials as revealed by scanning transmission electron microscopy and first-principles calculations. Additional efforts to induce superconductivity were investigated, including surface alkali doping, optical pumping, and hydrogen reduction. To probe liquid-ion gating, Ba 3 In 2 O 6 was successfully grown epitaxially on an epitaxial SrRuO 3 bottom electrode. So far none of these efforts induced superconductivity in Ba 3 In 2 O 6 , leaving the answer to the initial question of whether Ba 3 In 2 O 6 is a high-T c superconductor to be 'no' thus far.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Electron doping of NdNiO 3 thin films using dual chamber CaH 2 annealing
Hydrogen donor doping has been exploited as a strategy to manipulate the electronic structure and electrical properties of functional oxide systems. Especially, the development of synthetic methods to achieve electron doping of perovskite rare-earth nickelate thin films utilizing interstitial hydrogen is highly desirable considering the rich electronic phase diagram hosting several functional properties. Here, in this work, we present the hydrogenation of NdNiO 3 (NNO) thin films using CaH 2 annealing and the resulting giant modulation of electrical resistivity in hydrogenated NNO (H–NNO) thin films. Magnetron sputtering was employed to deposit epitaxial ~60 nm-thin NNO films on single crystal LaAlO 3 (LAO) substrates. The formation of the pristine perovskite NNO phase was realized after annealing the films at 500 °C for 24 h. CaH 2 annealing of NNO thin films for time durations ranging from 1 to 6 h was performed in a vacuumed ampule with two interconnected chambers at 280 °C. The two-chamber design enables a simple and clean approach for hydrogen doping without physical contact between the powder and sample of interest. X-ray diffraction and Raman spectroscopy revealed the formation of NNO in pristine samples, and the subsequent hydrogen incorporation upon CaH 2 annealing without forming any impurity phases. The conversion of the oxidation state of Ni towards +2 upon CaH 2 annealing was probed using X-ray photoelectron spectroscopy and X-ray absorption spectroscopy. Consequently, a substantial increase in the room-temperature resistivity was observed upon CaH 2 annealing indicating the formation of a strongly correlated electronic configuration of Ni in H–NNO due to electron doping. Overall, the findings of this study highlight the versatility of CaH 2 annealing as an electron doping method to tune the electrical properties of correlated oxides at low temperatures.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Understanding and design of interstitial oxygen conductors
Highly efficient oxygen-active materials that react with, absorb, and transport oxygen is essential for fuel cells, electrolyzers and related applications. While vacancy-mediated oxygen-ion conductors have long been the focus of research, they are limited by high migration barriers at intermediate temperatures (400–600 °C), which hinder their practical applications. In contrast, interstitial oxygen conductors exhibit significantly lower migration barriers enabling higher ionic conductivity at lower temperatures. This review systematically examines both well-established and recently identified families of interstitial oxygen-ion conductors, focusing on how their unique structural motifs such as corner-sharing polyhedral frameworks, isolated polyhedral, and cage-like architectures, facilitate low migration barriers through interstitial and/or interstitialcy diffusion mechanisms. A central discussion of this review focuses on the evolution of design strategies, from targeted donor doping, element screening, to physical-intuition descriptor material screening and machine learning approach, which leverage computational tools to explore vast chemical spaces in search for new interstitial conductors. The success of these strategies demonstrates that a significant, largely unexplored space remains for discovering high-performing interstitial oxygen conductors. Crucial features enabling high-performance interstitial oxygen diffusion include the availability of electrons for oxygen reduction and sufficient structural flexibility with accessible volume for interstitial accommodation and migration. This review concludes with a forward-looking perspective, proposing a knowledge-driven methodology that integrates current understanding with data-centric approaches to identify promising interstitial oxygen conductors outside traditional search paradigms. These approaches are expected to significantly accelerate the development of high-performance interstitial oxygen conductors for a variety of oxygen-active applications, ultimately paving the way for more efficient and sustainable energy technologies.
Interstitial oxygen conductors↗
Implications of doping on microstructure, processing, and thermoelectric performance: The case of PbSe
Abstract In this work, we highlight the often-overlooked effects of doping on the microstructure and performance of bulk thermoelectric materials to offer a broader perspective on how dopants interact with their parent material. Using PbSe doped with Na, Ag, and K as a model material system, we combine original computational, experimental, and microscopy data with established trends in material behavior, to provide an in-depth discussion of the relationship between dopants, processing, and microstructure, and their effects on thermoelectric efficiency and thermal stability. Notable observations include differences in the microstructure and mass loss of thermally treated samples of Na- and Ag-doped PbSe, as well as findings that Na and K cations exist predominantly as substitutional point defects while Ag also occupies interstitial sites and exhibits lower solubility. We discuss how these differences in point defect populations are known to affect a dopants’ ability to alter carrier concentration and how they may affect the mechanical properties of PbSe during processing. Graphic Abstract
Grovogui, Jann A. (ORCID:0000000200481049)↗
First-principles study of defects and doping limits in CaO
Calcium oxide (CaO) is a promising host for quantum defects because of its ultrawide bandgap and potential for long spin coherence times. Using hybrid functional calculations, we investigate the intrinsic point defects and how they limit Fermi-level positions and doping in CaO. We find calcium and oxygen vacancies to be the most common intrinsic defects, acting as compensating acceptors and donors, respectively. Oxygen interstitials are also prevailing under O-rich conditions and act as compensating donors. Due to compensation by these defects, O-poor conditions are required to dope CaO n-type, while O-rich conditions are required for p-type doping. We find that, at room temperature, intrinsic CaO can only achieve Fermi-level positions between 1.76 eV above the valence-band maximum (VBM) and 1.73 eV below the conduction-band minimum (CBM). If suitable shallow dopants are found, the allowed range of Fermi levels would increase to between VBM + 0.53 eV and CBM − 0.27 eV and is set by the compensating intrinsic defects. Additionally, we study hydrogen impurities, and show that hydrogen will not only limit p-type doping but can also act as shallow donor when substituting oxygen (HO defects).
Physics↗
Improved thermoelectric performance of α- and β- Cu 2 Se through suppression of hole density using extrinsic copper vacancies
Modulating Cu + ion disorder in Cu 2 Se can enable control over the polymorphism and the carrier density leading to enhanced thermoelectric properties for both α- and β-Cu 2 Se. Here we report that the incorporation of Cr 3+ into the Cu 2 Se crystal lattice facilitates the stabilization of α-Cu 2 Se at 300 K leading to a large (~140%) reduction in the carrier density both below and above the phase transition. This is attributed to the reduction in the density of intrinsic copper interstitials (Cu$^{•}_{i}$) within the Cu (2-δ-λ) (Cr$^{··}_{Cu}$)λ(V$^{'}_{Cu}$)δ(Cu$^{π}_{i}$) δ-2λ (h • ) δ-2λ Se crystal lattice. Such optimization of the carrier density led to a large (63%) increase in the thermopower and a drastic (46%) reduction in the total thermal conductivity for both α- and β-Cu 2 Se matrices. Consequently, a significant enhancement of the thermoelectric performance is observed in the entire temperature range from 300 K to 773 K. This results in high average ZT values for both α-Cu 2 Se (ZT ave = 0.60) and β-Cu 2 Se (ZT ave = 0.97), which paves the way for both near room temperature and high temperatures applications. Furthermore, this work provides a new approach to optimize the thermoelectric performance of Cu 2 Se-based materials by leveraging the interaction between mobile intrinsic Cu$^{·}_{i}$ and extrinsic V$^{'}_{Cu}$ to suppress the hole density.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Tunable structural, morphological and optical properties of undoped, Mn, Ni and Ag-doped CuInS 2 thin films prepared by AACVD
The preparation of high-quality copper indium sulphide, CuInS 2 photo-absorber material with tunable properties for efficient, low-cost, thin film solar cells using scalable methods remains a challenge. In order to address this, high quality off-stoichiometric undoped and Mn, Ni and Ag-doped CuInS 2 (CIS) thin films have been deposited onto glass substrates by aerosol-assisted chemical vapour deposition (AACVD) using metal diethyldithiocarbamate precursors at temperatures of 350, 400 and 450 °C. Data from powder X-ray diffraction (p-XRD), Raman spectroscopy and scanning electron microscopy-energy dispersive X-ray spectroscopy (SEM-EDS) suggest a correlation of morphology and composition of tetragonal phase (chalcopyrite and copper-gold-type) sulphur-deficient microcrystalline CIS thin films. For undoped thin films, near-infrared optical absorption and emission with tunable band gap between 1.32 and 1.42 eV are likely associated with donor-acceptor pairs involving deep or shallow electronic states such as sulphur vacancies (V S •• ), indium-copper anti-sites (In Cu •• ) and indium interstitials (In i ••• ) as donors and copper vacancies (V Cu ') as acceptors. Whilst Mn-doped thin films exhibit minimal tunable properties, Ni and Ag-doped films exhibit tunable morphology, composition and near-infrared absorption for small dopant content. Here, though further studies are required to explore the defect chemistry, these results show the utility of AACVD in tuning structural, morphological and optical properties of undoped, Mn, Ni and Ag-doped CIS thin films.
36 MATERIALS SCIENCE↗
Doping Effects on the Ductility of a Lightweight Refractory High-Entropy Alloy: Grain Boundary and Bulk Lattice Aspects
Doping elements in small amounts often segregate to grain boundaries (GBs) in alloys and can significantly impact mechanical properties and performance. Refractory high-entropy alloys (RHEAs) are known for their poor ductility, especially at low temperatures. Promoting GB cohesion through segregation can be an effective approach to mitigate embrittlement. Here, in this study, first-principles density functional theory (DFT) calculations were performed to examine the effects of important interstitial dopants (O, B, C, and N) and substitutional dopants (Cr, Y, La, and Ce) on the Σ5(310) [001] tilt GB of a lightweight RHEA Nb 32.5 Ti 27.5 Mo 22.5 Ta 12.5 Hf 2.5 Zr 2.5 . The DFT calculations reveal that certain dopants, such as B, C, Cr, N, and Y, exhibit favorable GB strengthening effects by improving bonding interactions with the bulk alloy. The impact of doping on the ductility parameter of the bulk lattice, defined as the ratio of surface energy to unstable stacking fault energy for the {110} <111> slip system, was also studied; and the results show that doping reduces the intrinsic ductility of the alloy, decreasing the D-parameter from 2.90 to 2.55, depending on the specific dopant. The present findings provide a foundational understanding at atomic level of the effect of representative dopants on mechanical properties of RHEAs and can be used to guide future alloy design for improved mechanical properties.
deformation charge density↗