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Results for “Irradiation induced defects”

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Dependence of defect introduction on temperature and resistivity and some long-term annealing effects

The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.

Brucker, G. J.↗
NASA NTRS1994

Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

Weinberg, I.↗
NASA NTRS1987

Calculations of the displacement damage and short-circuit current degradation in proton irradiated (AlGa)As-GaAs solar cells

A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.

Yeh, C. S.↗
NASA NTRS1994

Annealing of irradiated n+p InP buried homojunctions

At the last SPRAT conference, the Naval Research Laboratory (NRL) presented results from two experiments. One studied n+p diffused junction (DJ) InP solar cells, and the other studied n+p shallow homojunction (SHJ) InP mesa diodes grown by metalorganic chemical vapor deposition (MOCVD). The former work showed that a DJ solar cell in which the maximum power P(sub max) had been degraded by nearly 80 percent under irradiation recovered completely under short circuit illumination at 450K. The recovery was accompanied by the removal of all but one of the radiation-induced defect levels. The latter work, on the other hand, showed that the radiation-induced defects in the SHJ diodes did not anneal until the temperature reached 650K. These results suggest that an irradiated DJ solar cell, under illumination, will anneal at a temperature 200K lower than an irradiated SHJ cell. This is an unexpected result considering the similarity of the devices. The goal of the present research is to explain this different behavior. This paper investigates two points which arose from the previous studies. The first point is that the DJ cells were annealed under illumination while the SHJ diodes were annealed without bias. The second point investigated here is that the emitters of the DJ and SHJ devices were significantly different.

Walters, Robert J.↗
NASA NTRS2009

DNA Repair Defects and Chromosomal Aberrations

Yields of chromosome aberrations were assessed in cells deficient in DNA doublestrand break (DSB) repair, after exposure to acute or to low-dose-rate (0.018 Gy/hr) gamma rays or acute high LET iron nuclei. We studied several cell lines including fibroblasts deficient in ATM (ataxia telangiectasia mutated; product of the gene that is mutated in ataxia telangiectasia patients) or NBS (nibrin; product of the gene mutated in the Nijmegen breakage syndrome), and gliomablastoma cells that are proficient or lacking in DNA-dependent protein kinase (DNA-PK) activity. Chromosomes were analyzed using the fluorescence in situ hybridization (FISH) chromosome painting method in cells at the first division post irradiation, and chromosome aberrations were identified as either simple exchanges (translocations and dicentrics) or complex exchanges (involving >2 breaks in 2 or more chromosomes). Gamma irradiation induced greater yields of both simple and complex exchanges in the DSB repair-defective cells than in the normal cells. The quadratic dose-response terms for both simple and complex chromosome exchanges were significantly higher for the ATM- and NBS-deficient lines than for normal fibroblasts. However, in the NBS cells the linear dose-response term was significantly higher only for simple exchanges. The large increases in the quadratic dose-response terms in these repair-defective cell lines points the importance of the functions of ATM and NBS in chromatin modifications to facilitate correct DSB repair and minimize the formation of aberrations. The differences found between ATM- and NBS-deficient cells at low doses suggest that important questions should with regard to applying observations of radiation sensitivity at high dose to low-dose exposures. For aberrations induced by iron nuclei, regression models preferred purely linear dose responses for simple exchanges and quadratic dose responses for complex exchanges. Relative biological effectiveness (RBE) factors of all of the DNA repair-defective cell lines were smaller than those of normal cells, with the DNA-PK-deficient cells having RBEs near unity. To further investigate the sensitivity differences that were observed in ATM and NBS deficient cells, chromosomal aberrations were analyzed in normal lung fibroblast cells treated with KU-55933 (a specific ATM kinase inhibitor) or Mirin (an Mre11- Rad50-Nbs1 complex inhibitor involved in activation of ATM). We also performed siRNA knockdown of these proteins. Preliminary data indicate that chromosome exchanges increase in cells treated with the specific ATM inhibitor. Possible cytogenetic signatures of acute and low dose-rate gamma irradiation in ATM or nibrin deficient and suppressed cells will be discussed.

Hada, Megumi↗
NASA NTRS1981

Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

Li, S. S.↗
NASA NTRS1980

Radiation tolerance of boron doped dendritic web silicon solar cells

The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

Rohatgi, A.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS2009

Chromosomal Aberrations in DNA Repair Defective Cell Lines: Comparisons of Dose Rate and Radiation Quality

Chromosome aberration yields were assessed in DNA double-strand break repair (DSB) deficient cells after acute doses of gamma-rays or high-LET iron nuclei, or low dose-rate (0.018 Gy/hr) gamma-rays. We studied several cell lines including fibroblasts deficient in ATM (product of the gene that is mutated in ataxia telangiectasia patients) or NBS (product of the gene mutated in the Nijmegen breakage syndrome), and gliomablastoma cells that are proficient or lacking in DNA-dependent protein kinase, DNA-PK activity. Chromosomes were analyzed using the fluorescence in-situ hybridization (FISH) chromosome painting method in cells at the first division post-irradiation and chromosome aberrations were identified as either simple exchanges (translocations and dicentrics) or complex exchanges (involving >2 breaks in 2 or more chromosomes). Gamma radiation induced higher yields of both simple and complex exchanges in the DSB repair defective cells than in the normal cells. The quadratic dose-response terms for both chromosome exchange types were significantly higher for the ATM and NBS defective lines than for normal fibroblasts. However, the linear dose-response term was significantly higher only for simple exchanges in the NBS cells. Large increases in the quadratic dose response terms indicate the important roles of ATM and NBS in chromatin modifications that facilitate correct DSB repair and minimize aberration formation. Differences in the response of AT and NBS deficient cells at lower doses suggests important questions about the applicability of observations of radiation sensitivity at high dose to low dose exposures. For all iron nuclei irradiated cells, regression models preferred purely linear and quadratic dose responses for simple and complex exchanges, respectively. All the DNA repair defective cell lines had lower Relative biological effectiveness (RBE) values than normal cells, the lowest being for the DNA-PK-deficient cells, which was near unity. To further investigate the sensitivity differences for low and low high doses, we performed chronic low dose-rate irradiation, and have begun studies with ATM and Nibrin inhibitors and siRNA knockout of these proteins. Results support the conclusion that for the endpoint of simple chromosomal aberrations (translocation or dicentrics), the increased radiation sensitivity of AT cells found at high doses (>1 Gy) does not carry over to low doses or doserates, while NBS cells show increased sensitivity for both high and low dose exposures.

George, K. A.↗
NASA NTRS1995

High and low energy proton radiation damage in p/n InP MOCVD solar cells

InP p(+)nn(+) MOCVD solar cells were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The degradation of power output, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 meV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a DLTS study of the irradiated samples, the minority carrier defects H4 and H5 at E(v) + 0.33 and E(v) + 0.52 eV and the majority carrier defects E7 and E10 at E(c)- 0.39 and E(c)-0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect E10, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

Rybicki, George↗
NASA NTRS2001

Radiation induces genomic instability and mammary ductal dysplasia in Atm heterozygous mice

Ataxia-telangiectasia (AT) is a genetic syndrome resulting from the inheritance of two defective copies of the ATM gene that includes among its stigmata radiosensitivity and cancer susceptibility. Epidemiological studies have demonstrated that although women with a single defective copy of ATM (AT heterozygotes) appear clinically normal, they may never the less have an increased relative risk of developing breast cancer. Whether they are at increased risk for radiation-induced breast cancer from medical exposures to ionizing radiation is unknown. We have used a murine model of AT to investigate the effect of a single defective Atm allele, the murine homologue of ATM, on the susceptibility of mammary epithelial cells to radiation-induced transformation. Here we report that mammary epithelial cells from irradiated mice with one copy of Atm truncated in the PI-3 kinase domain were susceptible to radiation-induced genomic instability and generated a 10% incidence of dysplastic mammary ducts when transplanted into syngenic recipients, whereas cells from Atm(+/+) mice were stable and formed only normal ducts. Since radiation-induced ductal dysplasia is a precursor to mammary cancer, the results indicate that AT heterozygosity increases susceptibility to radiogenic breast cancer in this murine model system.

Non-NASA Center↗
NASA NTRS1995

High and Low Energy Proton Radiation Damage in p/n InP MOCVD Solar Cells

InP p(+)/n/n(+) solar cells, fabricated by metal organic chemical vapor deposition, (MOCVD) were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The power output degradation, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton-irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 MeV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton-irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a deep level transient spectroscopy (DLTS) study of the irradiated samples, the minority carrier defects H4 and H5 at E(sub v) + 0.33 and E(sub v) + 0.52 eV and the majority carrier defects E7 and El0 at E(sub c) - 0.39 and E(sub c) - 0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect El0, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

Rybicki, George↗
NASA NTRS2004

Imaging of gamma-Irradiated Regions of a Crystal

A holographic technique has been devised for generating a visible display of the effect of exposure of a photorefractive crystal to gamma rays. The technique exploits the space charge that results from trapping of electrons in defects induced by gamma rays. The technique involves a three-stage process. In the first stage, one writes a holographic pattern in the crystal by use of the apparatus shown in Figure 1. A laser beam of 532-nm wavelength is collimated and split into signal and reference beams by use of a polarizing beam splitter. On its way to the crystal, the reference beam goes through a two-dimensional optical scanner that contains two pairs of lenses (L1y, L2y and L1x,L2x) and mirrors M1 and M2, which can be rotated by use of micrometer drives to make fine adjustments. The signal beam is sent through a spatial light modulator that imposes the holographic pattern, then through two imaging lenses L(sub img) on its way to the crystal. An aperture is placed at the common focus of lenses Limg to suppress high-order diffraction from the spatial light modulator. The hologram is formed by interference between the signal and reference beams. A camera lens focuses an image of the interior of the crystal onto a charge-coupled device (CCD). If the crystal is illuminated by only the reference beam once the hologram has been formed, then an image of the hologram is formed on the CCD: this phenomenon is exploited to make visible the pattern of gamma irradiation of the crystal, as described next. In the second stage of the process, the crystal is removed from the holographic apparatus and irradiated with rays at a dose of about 100 krad. In the third stage of the process, the crystal is remounted in the holographic apparatus in the same position as in the first stage and illuminated with only the reference beam to obtain the image of the hologram as modified by the effect of the rays. The orientations of M1 and M2 can be adjusted slightly, if necessary, to maximize the intensity of the image. Figure 2 shows such an image that was formed in a crystal of Fe:LiNbO3.

Dragoi, Danut↗