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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Band alignments and polarization properties of the Zn-IV-nitrides

Zn-IV-nitrides have a range of potential applications in electronic and optoelectronic devices and can be integrated with currently used III-nitride semiconductors and their alloys. Using hybrid density functional theory, we examine band gaps, band offsets, and polarization properties of the Zn-IV-nitrides and the ramifications of these properties on heterointerfaces formed between the Zn-IV-nitrides and III-nitrides. Here, we find a type-II band alignment between ZnGeN 2 and GaN, where the valence band of GaN is 0.28 eV above the valence band of ZnGeN 2 . Heterostructures between Zn-IV-nitrides and III-nitrides result in interface charges that allow for novel heterostructures and increased control over polarization fields. We find that an interface between In x Ga 1-x N and ZnGeN 2 can lead to zero interfacial polarization charge; however, the band alignments are unfavorable for carrier confinement in light-emitting devices. At the interface between AlN and ZnSiN 2 , we predict a large two-dimensional electron gas to form, confined to the ZnSiN 2 layer.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Investigation of the electrical behavior of AlGaN/GaN high electron mobility transistors grown with underlying GaN:Mg layer

In the current study, the electrical behavior of the AlGaN/GaN high electron mobility transistors (HEMTs) grown with an underlying GaN:Mg layer is detailed. It is shown that the activation of the buried p-GaN layer is achieved without hydrogen diffusion out of the layer. Reversal in the electrical behavior of the two-dimensional electron gas (2DEG) is also observed in the as-grown structure based on the p-GaN activation sequence. This behavior is attributed to the complex role played by hydrogen in the overgrown HEMT layers. The results of this study provide new insights into the development of metal organic chemical vapor deposition grown HEMTs with activated buried p-GaN films.

Mahaboob, Isra (ORCID:0000000171558130)↗
DOE OSTI2023

Ab-initio General-relativistic Neutrino-radiation Hydrodynamics Simulations of Long-lived Neutron Star Merger Remnants to Neutrino Cooling Timescales

Abstract We perform the first 3D ab-initio general-relativistic neutrino-radiation hydrodynamics of a long-lived neutron star merger remnant spanning a fraction of its cooling timescale. We find that neutrino cooling becomes the dominant energy loss mechanism after the gravitational-wave dominated phase (∼20 ms postmerger). Electron flavor antineutrino luminosity dominates over electron flavor neutrino luminosity at early times, resulting in a secular increase of the electron fraction in the outer layers of the remnant. However, the two luminosities become comparable ∼20–40 ms postmerger. A dense gas of electron antineutrinos is formed in the outer core of the remnant at densities ∼10 14.5 g cm −3 , corresponding to temperature hot spots. The neutrinos account for ∼10% of the lepton number in this region. Despite the negative radial temperature gradient, the radial entropy gradient remains positive, and the remnant is stably stratified according to the Ledoux criterion for convection. A massive accretion disk is formed from the material squeezed out of the collisional interface between the stars. The disk carries a large fraction of the angular momentum of the system, allowing the remnant massive neutron star to settle to a quasi-steady equilibrium within the region of possible, stable, rigidly rotating configurations. The remnant is differentially rotating, but it is stable against the magnetorotational instability. Other MHD mechanisms operating on longer timescales are likely responsible for the removal of the differential rotation. Our results indicate the remnant massive neutron star is thus qualitatively different from a protoneutron stars formed in core-collapse supernovae.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2022

The complex structural and chemical nature of monolithic U-10Mo fuel and Zr barrier layer

Nanoscale microstructural characterization by advanced transmission electron microscopy techniques on a U-10Mo/Zr barrier layer monolithic fuel plate was performed to evaluate the microstructural evaluation after high burn-up. Gas bubble superlattice evolution, grain restructuring, and evolution of the Zr interaction layer is investigated through detailed electron microscopy characterization. The use of automated crystallographic orientation mapping to irradiated U-10Mo fuel highlights that the restructured ultra-fine grains are separated by high angle grain boundaries at a burn up of 4.42 × 10 21 fissions/cm 3 . Additionally, advanced chemical analysis and multi-variable statistical analysis shows spatial clustering of solid fission product precipitates. Finally, characterization of a newly observed porous nanocrystalline Zr region in the barrier layer is studied. Finally, this work provides insights into the grain subdivision and restructuring process while using advanced microscopy techniques to analyze fission products in neutron-irradiated U-10Mo fuel.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Fast timing with µRWELL-PICOSEC detector technology

The µWELL-PICOSEC detector, which is based on Resistive Micro-Well (µRWELL) technology, is a novel concept for fast timing gaseous detectors that can provide timing resolution in the tens of picosecond range, making it ideal candidate for time-of-flight (TOF) technology for particle identification (PID) in particle physics experiments as well as for future medical instrumentation. The µRWELL-PICOSEC concept is based on a Cerenkov radiator that produces Cerenkov photons from high energetic charged particles, a photocathode layer that converts the Cerenkov photons into primary electrons, a µRWELL amplification layer that multiply the electrons through amplification in a CF4-based gas mixture and a pad-segmentation anode readout coupled with fast timing electronics to provide fast signal. Beam tests were carried out at the CERN SPS H4 beamline in summer 2023 and 2024. Preliminary results show timing performance of the order of 23 ps achievable with µRWELL-PICOSEC prototype. and position scan of the 100-pads of a multi-channel prototype was also performed to study time response uniformity of large area detector. In this talk, after a brief overview of the PICOSEC technology, we will present recent results with different single channel µRWELL-PICOSEC prototype designs and also the position scan results of the 100-pads large prototype to study timing response uniformity for large area µRWELL-PICOSEC detector. Finally, we will discuss the ongoing R&D effort to further improve the timing resolution and allow good position capabilities through charge sharing for large area.

Gnanvo, Kondo↗
DOE OSTI2022

Competing electronic states emerging on polar surfaces

Excess charge on polar surfaces of ionic compounds is commonly described by the two-dimensional electron gas (2DEG) model, a homogeneous distribution of charge, spatially-confined in a few atomic layers. Here, by combining scanning probe microscopy with density functional theory calculations, we show that excess charge on the polar TaO 2 termination of KTaO 3 (001) forms more complex electronic states with different degrees of spatial and electronic localization: charge density waves (CDW) coexist with strongly-localized electron polarons and bipolarons. These surface electronic reconstructions, originating from the combined action of electron-lattice interaction and electronic correlation, are energetically more favorable than the 2DEG solution. They exhibit distinct spectroscopy signals and impact on the surface properties, as manifested by a local suppression of ferroelectric distortions.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Determining Catalytically Relevant Surfaces through Coverage-Dependent Lattice Gas Models: Carbon Adsorption on Fe(100)

Here, we have quantified the C–C lateral interactions on Fe(100) using a density functional theory (DFT)-parameterized lattice gas cluster expansion (LG CE) model trained using 265 unique configurations spanning a C coverage from 0 to 1 monolayer (ML). Our LG CE model shows high predictive accuracy with a leave-multiple-out cross-validation score of 10.2 and 16.6 meV/site for systems with and without the top two layers of Fe atoms fixed, respectively. Electronic ground-state structures identified from the lattice gas model (including the structures at 0 and 1 monolayers) were further used to generate ab initio phase diagrams under a range of temperatures and pressures. At low temperatures (<400 K), we found that the 1.0 monolayer structure is dominant, whereas at higher temperatures (>500 K), the 0.88 ML structure is most likely to form on the Fe surface. Interestingly, our model identified a c (2 × 2) ordered structure at 1/2 ML, which correlates well with previous DFT studies for carbon adsorption on iron surfaces and matches with the experimentally observed low-energy electron diffraction structure. Overall, the DFT-parameterized energies for the C/Fe system including effects of coverage and configurational space can further help in developing multiscale models for various heterogeneous reactions involving C–C and C–Fe interactions.

08 HYDROGEN↗
DOE OSTI2020

Fermi Gases in Bichromatic Superlattices

The purpose of the program is the broad study of designer materials made of ultra-cold atoms and light, which provides new paradigms for emulating exotic layered systems. Bichromatic superlattices enable control and study of both dimensionality and dispersion in layered, strongly correlated Fermi gases, to model high-temperature superfluidity/superconductivity. Most layered materials are quasi-two-dimensional, neither two-dimensional, like a sheet, nor three-dimensional, like a gas, but somewhere in between. In quasi-2D layers with an unequal number of spin-up and spin-down electrons, particularly strong attraction between pairs of electrons with opposite spins is predicted to achieve the highest possible superconducting transition temperatures. To understand these materials, we emulate them with a layered, ultra-cold Fermi gas of 6Li atoms, magnetically tuned near a collisional (Feshbach) resonance, where precise control of the attraction, spin-composition, dimensionality and dispersion provides new tests of theory. The primary goals are of the program are: (1) Elucidation of the effects of dimensionality and confining potential shape on the enhancement of high-temperature superfluidity in a layered, strongly correlated Fermi gases; (2) Control of dispersion and the study of tunable Dirac points in one dimension.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Origin of the 2D Electron Gas at the SrTiO 3 Surface

Bulk SrTiO 3 is a well-known band insulator and the most common substrate used in the field of complex oxide heterostructures. Its surface and interface with other oxides, however, have demonstrated a variety of remarkable behaviors distinct from those expected. In this work, using a suite of in situ techniques to monitor both the atomic and electronic structures of the SrTiO 3 (001) surface prior to and during growth, the disappearance and re-appearance of a 2D electron gas (2DEG) is observed after the completion of each SrO and TiO 2 monolayer, respectively. The 2DEG is identified with the TiO 2 double layer present at the initial SrTiO 3 surface, which gives rise to a surface potential and mobile electrons due to vacancies within the TiO 2-x adlayer. Much like the electronic reconstruction discovered in other systems, two atomic planes are required, here supplied by the double layer. The combined in situ scattering/spectroscopy findings resolve a number of longstanding issues associated with complex oxide interfaces, facilitating the employment of atomic-scale defect engineering in oxide electronics.

2D electron gas↗
DOE OSTI2022

Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium

Atomic layer etching driven by self-limiting thermal reactions has recently been developed as a highly conformal and isotropic technique for low damage atomic scale material removal by sequential exposures of vapor phase reactants. Gallium oxide (Ga2O3) is currently among the materials of interest due to a large variety of applications including power electronics, solar cells, gas sensors, and photon detectors. In this study, Ga2O3 was deposited by plasma enhanced atomic layer deposition using trimethylgallium [TMG, Ga(CH3)3] and O2 plasma at a substrate temperature of 200 °C. We report a newly developed method for Ga2O3 thermal atomic layer etching, in which surface modification is achieved through HF exposure resulting in a gallium fluoride surface layer, and then removed through volatile product formation via ligand exchange with TMG. Saturation of the precursor exposure at a substrate temperature of 300 °C resulted in an etch rate of 1.0 ± 0.1 Å/cycle for amorphous Ga2O3. Uniformity and conformality of the atomic layer etching process were confirmed via atomic force microscopy with a measured surface roughness of 0.55 ± 0.05 nm that remains unchanged after etching. The use of TMG for etching may expand available precursors for atomic layer etching processes, while allowing for both etching and deposition of Ga2O3 using the same metalorganic precursor.

Hatch, Kevin A. (ORCID:0000000283118623)↗
DOE OSTI2019

Mechanisms and Kinetics of Reduction of Solid NiO in CO/CO{sub 2} and CO/Ar Gas Mixtures

Experimental studies have been carried out on the reduction of dense nickel oxide in CO/CO{sub 2} and CO/Ar gas mixtures at temperatures between 873 K and 1273 K (600 °C and 1000 °C). Examination of the nickel product microstructures of partially reduced samples has been undertaken using high-resolution scanning electron microscopy. It has been shown that the reduction can result in the formation of a dense nickel layer at the sample surface, continuous gas pore growth in the NiO, or the discontinuous growth of the porous nickel product. The product morphologies formed, and the microstructures of the gas/metal oxide/metal interfaces, are functions of reaction temperature and gas conditions. The microstructural and kinetic evidence indicates direct links between the reduction rates, nickel product growth mechanisms, and product microstructures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Precision Measurements of the Neutron Magnetic Form Factor to High Momentum Transfer using Durand's Method

Protons and neutrons, collectively known as nucleons, along with electrons, constitute the funda- mental building blocks of the visible universe. Understanding their internal structure is crucial for addressing key scientific questions about our origin and existence. Elastic electron-nucleon scatter- ing provides insights into the spatial distributions of charge and current within nucleons through their electromagnetic form factors. Accurate knowledge of these form factors over a broad range of Q2, the squared four-momentum transfer in the scattering process, reveals details about the nucleon’s internal structure. However, high-Q2 data of the nucleon electromagnetic form factor is scarce due to the challenges associated with such measurements. This thesis reports preliminary results from high-precision measurements of the neutron magnetic form factor (Gn M ) to unprecedented Q2 using Durand’s method, also known as the “ratio” method. Systematic errors are greatly reduced by extracting Gn M from the ratio of neutron-coincident (D(e, e'n)) to proton-coincident (D(e, e'p)) quasi-elastic electron scattering from deuteron. The scattered electrons were detected in the BigBite spectrometer, which features multiple Gas Elec- tron Multiplier (GEM) layers with large active area for high-precision tracking at very high rates. Simultaneous nucleon detection was performed by the Super BigBite spectrometer, which utilizes a dipole magnet with large solid angle acceptance at forward angles and a novel hadron calorimeter with very high and comparable detection efficiencies for both protons and neutrons. This setup could handle very high luminosity, making high-Q2 measurements feasible. Data were collected at five Q2 points: 3, 4.5, 7.4, 9.9, and 13.6 (GeV/c)2. Preliminary results are reported for all, with the lowest two Q2 points in good agreement with existing world data, while the higher points significantly extend the Q2 range in which Gn M is known accurately. The precision of the highest Q2 point is expected to remain unmatched for years to come.

Datta, Provakar↗
DOE OSTI2020

Oxygen Reduction Reaction Activity of Nanocolumnar Platinum Thin Films by High Pressure Sputtering

Nanocolumnar platinum thin films (Pt-TFs) were produced by high pressure sputtering (HIPS) and investigated as oxygen reduction reaction electrocatalysts for polymer electrolyte membrane fuel cells. Conventional high-density Pt-TF prepared by low pressure sputtering was also studied for comparison. Pt-TFs were deposited on a microporous layer (MPL)-like surface composed of carbon particles to mimic catalyst-coated gas diffusion electrodes. Electron microscopy imaging revealed that HIPS Pt-TFs developed a cauliflower-like columnar microstructure, which originated from a shadowing effect during HIPS. This shadowing effect is enhanced on the rough surface of the MPL-like carbon that leads to the nano-cauliflower formation. With this approach, we also aimed to relate the catalyst performance obtained by benchtop tests directly to membrane electrode assembly test results. The electrochemically active surface area of Pt-TFs increased from 10 to 19 m 2 /g with increasing sputter pressure. Specific activity of conventional high-density and nanocolumnar films were similar at ~600 μA/cm 2 , which is likely due to their similar crystal grain sizes, >5 nm. On the other hand, mass-specific (MA) activity values increased from ~0.06 A/mgPt for conventional Pt-TF to ~0.13 A/mgPt for HIPS Pt-TFs, which is consistent with the columnar microstructure of HIPS films providing a better catalyst utilization compared to conventional Pt-TF.

08 HYDROGEN↗
DOE OSTI2023

Zinc‐Imidazolate Films as an All‐Dry Resist Technology

Here, motivated by the drawbacks of solution phase processing, an all‐dry resist formation process is presented that utilizes amorphous zinc‐imidazolate (aZnMIm) films deposited by atomic/molecular layer deposition (ALD/MLD), patterned with electron beam lithography (EBL), and developed by novel low temperature (120 °C) gas phase etching using 1,1,1,5,5,5‐hexafluoroacetylacetone (hfacH) to achieve well‐resolved 22 nm lines with a pitch of 30 nm. The effects of electron beam irradiation on the chemical structure and hfacH etch resistance of aZnMIm films are investigated, and it is found that electron irradiation degrades the 2‐methylimidazolate ligands and transforms aZnMIm into a more dense material that is resistant to etching by hfacH and has a C:N:Zn ratio effectively identical to that of unmodified aZnMIm. These findings showcase the potential for aZnMIm films to function in a dry resist technology. Sensitivity, contrast, and critical dimensions of the patterns are determined to be 37 mC cm −2 , 0.87, and 29 nm, respectively, for aZnMIm deposited on silicon substrates and patterned at 30 keV. This work introduces a new direction for solvent‐free resist processing, offering the prospect of scalable, high‐resolution patterning techniques for advanced semiconductor fabrication processes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Etching of Si 3 N 4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

An etching system based on the interaction of electrons extracted from a direct current (DC) hollow-cathode (HC) Ar plasma and injected towards a Si3N4 covered silicon substrate located in the downstream reactive environment created by an additional remote CF 4 /O 2 plasma source was developed and evaluated. By controlling the properties of the injected beam electrons, this approach allows to deliver energy to a surface functionalized by exposure to reactive species, and initiate surface etching. The energy of the primary beam electrons is controlled by the acceleration voltage relative to the HC discharge. Ar atoms flow from the high-pressure HC discharge into the low pressure downstream reactive environment in the process chamber. For an acceleration voltage greater than the ionization potential of Ar and/or process gas species, the energetic primary beam electrons produce a secondary plasma in the process chamber, and can also cause additional dissociation. We have characterized the properties of the secondary plasma and also surface etching of Si 3 N 4 as a function of process parameters, including acceleration voltage (0-80 V), discharge current of the HC discharge (1-2 A), pressure (3.5-20 mTorr), source to substrate distance (1.5 to 5 cm), and feed gas composition (20% and 80% O2 in CF 4 /O 2 ). The electron energy probability function (EEPF) measured with a Langmuir probe about 2.5 cm below the extraction ring suggests several major groups of electrons for this situation, including high energy primary beam electrons with an energy that varies as the acceleration voltage is changed and low energy electrons produced by beam electron-induced ionization of the Ar gas in the process chamber. When a remote CF 4 /O 2 plasma is additionally coupled to the process chamber, Si 3 N 4 surfaces can be functionalized, and by varying the energy of the beam electrons, Si 3 N 4 etching can be induced by electron-neutral synergy effect with plasma-surface interaction. For conditions without beam electron injection, the remote plasma etching rate (ER) of Si 3 N 4 depends strongly on the O 2 concentration in the CF 4 /O 2 processing gas mixture and can be suppressed for O 2 -rich process conditions by the formation of a SiONF passivation layer on the Si 3 N 4 surface. The combination of the HC electron beam source with the remote plasma source (HCEB-RP) makes it possible to induce Si 3 N 4 etching for O 2 -rich remote plasma conditions where remote plasma by itself produces negligible Si 3 N 4 etching. The electron enhanced etching of Si 3 N 4 depends strongly on O 2 /CF 4 mixing ratio reflecting changing arrival rates of O and F species at the surface. Optical emission spectroscopy was used to estimate the ratio of gas phase F and O densities and found to be controlled by the gas mixing ratio and independent of HC EB operating conditions. At this time the detailed sequence of events operative in the etching mechanism is unclear. While the increase of the electron energy is ultimately responsible for initiating surface etching, at present we cannot rule out a role of ions from the simultaneously produced secondary plasma in plasma surface interaction mechanisms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

Abstract While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au 4+ ion to fluence levels ranging from 1.72 × 10 10 to 3.745 × 10 13 ions cm −2 , or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ , and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au 4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Electron Bernstein wave conversion of high-field side injected X-modes in QUEST

This paper presents a detailed design of the Q-shu University experimental steady state spherical tokamak's (QUEST's) high-field side (HFS) injection system for electron Bernstein wave (EBW) excitation and the results of an experimental comparison of the HFS eXtraordinary X-mode and low-field side (LFS) ordinary O-mode injection of 8.2 GHz radio frequency (RF) power. Waveguides, as an alternative to mirror polarizers for transmitting RF X-mode power from LFS to HFS for EBW conversion, were used instead of the installation of an RF mirror. Testing of LFS-to-HFS RF power transmission at 8.2 GHz, using an RG-50-type vacuum waveguide in a bench-scale device filled with SF6 gas at 0.03 Mpa, revealed that an RF power of 10.8 kW could traverse the fundamental electron cyclotron resonance layer for 60 s without breakdown. The short-length, open-ended waveguide antenna used in the HFS injection-induced wave diffraction reduced the efficiency of power delivery to the upper hybrid resonance (UHR) by approximately 7% at an electron temperature of 50 eV. The HFS injection was able to produce brighter camera images than the standard LFS injection. The location of the UHR, as estimated by measuring the density with an interferometer, agreed with its location as measured by plasma radiation low-field, side-edge positions shown by fast camera imaging. This indicates that the plasma was produced by mode-converted EBW. The HFS injection had an absorption efficiency of 96%, compared to 40% for LFS. A greater fluctuation of floating potential adjustable to the lower hybrid wave (LHW) was observed in the HFS case by installing a Langmuir probe, confirming that EBW conversion efficiency was higher in the HFS case. Moreover, after setting the poloidal field to B PF = 7.6 mT, plasma current (I P ) in the HFS peaked at 1.3 kA, as opposed to 0.3 kA for LFS, despite LFS injection having a total power of 55 kW, compared to 40 kW for HFS. However, as the impurity level was comparatively high, it is believed that this I P is dominated by pressure-drive, which makes it difficult to analyze EBWCD. Finally, the line-integrated density in the HFS injection peaked at 1.6 × 10 18 m -2 , compared to 8 × 10 17 m -2 in the LFS one.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Room temperature plasma-etching and surface passivation of far-ultraviolet Al mirrors using electron beam generated plasmas

The development of optical systems operating in the far ultraviolet range (FUV, λ=100-200 nm) is limited by the efficiency of passivated aluminum (Al) mirrors. Although it is presently possible to obtain high-reflectivity FUV mirrors through physical vapor deposition, the process involves deposition with substrates at high temperatures, which is technically challenging for large optical elements. A novel passivation procedure for bare Al mirrors is reported. The treatment consisted of using a low-temperature electron-beam generated plasma produced in a gas mixture of Ar and SF6 to etch away the native oxide layer from the Al film, while simultaneously promoting the generation of a thin aluminum tri-fluoride (AlF3) layer on the Al surface. In the first section we analyze the effect of varying both ion energy and SF6 concentration on the FUV reflectance, thickness, composition, and surface morphology of the resulting AlF3 protective layers. In the second section, the reflectivity of samples is optimized at selected important FUV wavelengths for astronomical observations. Notably, samples attained state-of-the-art reflectances of 75% at 108.5 nm (He Lyman γ), 91% at 121.6 nm (H Lyman α), 90% at 130.4 nm (OI), and of 95% at 155.0 nm (C IV). The stability over time of these passivated mirrors is also investigated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗